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    • 21. 发明授权
    • Control program development support apparatus
    • 控制程序开发支持设备
    • US06804636B2
    • 2004-10-12
    • US09834889
    • 2001-04-16
    • Yosuke SentaYuichi Sato
    • Yosuke SentaYuichi Sato
    • G06G762
    • G05B19/0426G05B2219/23446
    • An apparatus enables development and debugging of a control program for controlling a relatively small product having rapid response without using an actual mechanism. A simulation unit simulates an operation of a mechanism, in a simulation cycle shorter than a control cycle, for a time corresponding to the control cycle, and outputs a state variable of the mechanism to a holding circuit. When the state variable is held in the holding circuit, a simulation control unit makes the simulation unit shift to a response waiting state and makes a control program executing unit calculate a controlled variable. When the controlled variable is held in the holding circuit, the simulation control unit makes the control program execution unit shift to a response waiting state and makes the simulation unit initiate a simulating operation. The apparatus is applied when a control program for every product requiring a precise servo control is developed.
    • 一种装置能够开发和调试用于在不使用实际机构的情况下控制具有快速响应的相对小的产品的控制程序。 模拟单元在比控制周期短的模拟周期中模拟机构的操作一段与控制周期相对应的时间,并将该机构的状态变量输出到保持电路。 当状态变量保持在保持电路中时,模拟控制单元使仿真单元转移到响应等待状态,并使控制程序执行单元计算受控变量。 当控制变量保持在保持电路中时,模拟控制单元使控制程序执行单元转移到响应等待状态,并使仿真单元启动模拟操作。 当需要精确伺服控制的每个产品的控制程序被开发时,该装置被应用。
    • 23. 发明授权
    • High-frequency crystal oscillator outputting a harmonic component
    • 高频晶体振荡器输出谐波分量
    • US06549083B2
    • 2003-04-15
    • US09855686
    • 2001-05-16
    • Nobuyuki KanazawaTakeo OitaYuichi Sato
    • Nobuyuki KanazawaTakeo OitaYuichi Sato
    • H03B536
    • H03B5/368H03B5/362
    • A high-frequency crystal oscillator capable of outputting a signal at a frequency, for example, higher than 500 MHz without using a multiplication amplifier. The high-frequency crystal oscillator comprises a voltage controlled Colpitts oscillation circuit operating at the fundamental frequency of a quartz-crystal element, means for increasing the level of harmonic component in an output from the Colpitts oscillation circuit, an SAW (Surface Acoustic Wave) filter for selecting a component of a predetermined order of the harmonic component, and a broadband amplifier for amplifying the component selected by the SAW filter. The means for increasing the levels of harmonic component is, for example, a resistor for setting the operating point of a transistor in the oscillation circuit such that an output signal is distorted.
    • 能够输出频率例如高于500MHz的信号而不使用乘法放大器的高频晶体振荡器。 高频晶体振荡器包括以石英晶体元件的基频操作的电压控制的Colpitts振荡电路,用于增加来自Colpitts振荡电路的输出中的谐波分量的电平,SAW(表面声波)滤波器 用于选择谐波分量的预定次数的分量,以及用于放大由SAW滤波器选择的分量的宽带放大器。 用于增加谐波分量的装置是例如用于设置振荡电路中的晶体管的工作点的电阻器,使得输出信号失真。
    • 24. 发明授权
    • Nearby photography adapter attachable and detachable to and from camera
    • 相机附近可拆卸的摄影适配器
    • US06229961B1
    • 2001-05-08
    • US09259931
    • 1999-03-01
    • Yuichi TorikoshiSumio KawaiYuichi Sato
    • Yuichi TorikoshiSumio KawaiYuichi Sato
    • G03B1100
    • G03B17/561G03B17/566
    • A nearby photography adapter includes a photographic range and camera-to-subject distance indicating frame, a flashlight correcting auxiliary plate, and a distance knob interfering projection. The photographic range and camera-to-subject distance indicating frame is a member mounted on a base plate and collapsed from being erect and usable. The distance knob interfering projection is formed as an integral part of the base plate. When a distance knob on a photographic lens frame is set to a nearby photographic position and the photographic range and camera-to-subject distance indicating frame and auxiliary plate are standing erect, the photography adapter can be attached to a camera and nearby photography can be carried out. Advantageously, with the nearby photography adapter, the photographic range and the camera-to-subject distance can be indicated reliably. Furthermore, the nearby photography adapter can be put away neatly with the components stowed during normal photography.
    • 附近的照相适配器包括摄影范围和摄像对象距离指示框,手电筒校正辅助板和距​​离旋钮干涉投影。 照相范围和照相机对被摄体距离指示框架是安装在基板上并从直立和可用而折叠的构件。 距离旋钮干涉突起形成为基板的整体部分。 当照相镜头框上的距离旋钮设置在附近的拍摄位置,并且照相范围和摄像机到被摄体距离指示框和辅助板正在直立时,摄影适配器可以附接到相机,并且附近的摄影可以 执行。 有利的是,利用附近的拍摄适配器,可以可靠地指示照相范围和照相机对被摄体的距离。 此外,附近的摄影适配器可以在正常摄影过程中收集的组件整齐地放下。
    • 27. 发明授权
    • Magnetoresistance device
    • 磁阻装置
    • US5923504A
    • 1999-07-13
    • US817098
    • 1997-04-18
    • Satoru ArakiYuichi SatoOsamu Shinoura
    • Satoru ArakiYuichi SatoOsamu Shinoura
    • G11B5/39H01F10/32H01L43/08H01L43/10G11B5/127
    • B82Y25/00B82Y10/00G11B5/3903G11B5/3919G11B5/3922G11B5/3925G11B5/399H01F10/3268H01L43/08H01L43/10G11B2005/3996G11B5/39G11B5/3932
    • According to the present invention on a magnetoresistance device having a magnetoresistance effect element, since iron oxide FeO.sub.x exhibiting antiferromagnetism is used as a pinning layer, a spin-valve type magnetoresistance effect element can be obtained which is particularly excellent in corrosion resistance and has a magnetoresistance ratio with an MR slope no less than 0.7% Oe in the region of the high-frequency magnetic field of 1 MHz. Further, the rise-up characteristic of an MR curve at the zero magnetic field is extremely excellent with small hysteresis, and it has high heat resistance. The heat resistance is further improved by interposing an oxygen blocking layer between the pinning layer and a ferromagnetic layer. In the magnetoresistance device, for example, an MR head, using the magnetoresistance effect element having a magnetic multilayer film, an output voltage is approximately five times as high as that of the conventional material. Accordingly, there can be provided an excellent MR head which has extremely high reliability and enables the reading for ultrahigh density magnetic recording exceeding 1 Gbit/inch.sup.2.
    • PCT No.PCT / JP96 / 02702 Sec。 371日期1997年4月18日 102(e)1997年4月18日PCT PCT 1996年9月19日PCT公布。 第WO97 / 11499号公报 日期1997年3月27日根据本发明,对具有磁阻效应元件的磁阻器件,由于使用具有反铁磁性的氧化铁FeOx作为钉扎层,因此可获得特别优异的自旋阀型磁电阻效应元件 并且在1MHz的高频磁场的区域中具有MR斜率不小于0.7%Oe的磁阻比。 此外,在零磁场下,MR曲线的上升特性非常优异,滞后小,耐热性高。 通过在钉扎层和铁磁层之间插入氧阻挡层来进一步提高耐热性。 在磁电阻器件中,例如,使用具有磁性多层膜的磁阻效应元件的MR磁头,输出电压大约是常规材料的5倍。 因此,可以提供极高的可靠性的极好的MR磁头,并能够读取超过1Gbit / inch2的超高密度磁记录。