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21. 发明申请

US20080153785A1 Pharmaceutical Compositions Containing Biophosphonate for Improving Oral Absorption 审中-公开
标题翻译：含有生物膦酸盐用于改善口服吸收的药物组合物
公开(公告)号：US20080153785A1
公开(公告)日：2008-06-26
申请号：US11883033
申请日：2006-01-03
申请人： Hee-Jong Shin , Min-Hyo Kim , Mee-Hwa Choi , Jin-Woo Lee
发明人： Hee-Jong Shin , Min-Hyo Kim , Mee-Hwa Choi , Jin-Woo Lee
IPC分类号： A61K31/663 , A61P19/10
CPC分类号： A61K9/2054 , A61K9/0095 , A61K9/1623 , A61K9/1652 , A61K9/2013 , A61K9/205 , A61K9/2059 , A61K31/663
摘要： Provided is a pharmaceutical composition having improved oral absorption of a bisphosphonate drug, comprising at least one active substance selected from bisphosphonate drugs having non-permeability to a lipid biomembrane due to ionization and high water-solubility in vivo and having bioavailability of less than 10%, and at least one selected from biocompatible water-soluble chitosan, as essential ingredients.
摘要翻译：本发明提供了具有改善的双膦酸盐药物口服吸收的药物组合物，其包含至少一种活性物质，所述活性物质由于离子化而对脂质生物膜具有非渗透性，并且在体内具有高水溶性，并且具有小于10％的生物利用度，和选自生物相容性水溶性壳聚糖中的至少一种作为必需成分。

22. 发明申请

US20080001230A1 Semiconductor devices including transistors having recessed channels and methods of fabricating the same 失效
标题翻译：包括具有凹陷通道的晶体管的半导体器件及其制造方法
公开(公告)号：US20080001230A1
公开(公告)日：2008-01-03
申请号：US11704872
申请日：2007-02-09
申请人： Jin-Woo Lee , Tae-Young Chung , Sung-Hee Han
发明人： Jin-Woo Lee , Tae-Young Chung , Sung-Hee Han
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/78 , H01L21/823437 , H01L21/823481 , H01L29/4236 , H01L29/42376 , H01L29/66621
摘要： Semiconductor devices including an isolation layer on a semiconductor substrate are provided. The isolation layer defines an active region of the semiconductor substrate. The device further includes an upper gate electrode crossing over the active region and extending to the isolation layer and lower active gate electrode. The lower active gate electrode includes a first active gate electrode extending from the upper gate electrode to the active region and a second active gate electrode below the first active gate electrode and having a greater width than a width of the first active gate electrode. The device further includes a lower field gate electrode that extends from the upper gate electrode to the isolation layer and has a bottom surface that is at a lower level than a bottom surface of the active gate electrode such that the sidewalls of the active region are covered below the lower active gate electrode. Related methods of fabricating semiconductor devices are also provided herein.
摘要翻译：提供包括半导体衬底上的隔离层的半导体器件。隔离层限定半导体衬底的有源区。该器件还包括与有源区交叉并延伸到隔离层和下活性栅电极的上栅电极。下有源栅电极包括从上栅极延伸到有源区的第一有源栅电极和位于第一有源栅电极下方并且具有比第一有源栅电极的宽度更大的宽度的第二有源栅电极。该器件还包括一个从上部栅电极延伸到隔离层的下部栅极电极，并且具有一底部表面，该底表面处于与该有源栅极电极的底表面相比较低的位置，使得该有源区域的侧壁被覆盖在下部有源栅电极下方。本文还提供了制造半导体器件的相关方法。

23. 发明授权

US07247541B2 Method of manufacturing a semiconductor memory device including a transistor 失效
标题翻译：制造包括晶体管的半导体存储器件的方法
公开(公告)号：US07247541B2
公开(公告)日：2007-07-24
申请号：US11171710
申请日：2005-06-30
申请人： Jin-Woo Lee , Cheol-Ju Yun , Hyeoung-Won Seo
发明人： Jin-Woo Lee , Cheol-Ju Yun , Hyeoung-Won Seo
IPC分类号： H01L21/336
CPC分类号： H01L27/10814 , H01L27/10823 , H01L27/10852 , H01L27/10873 , H01L27/10876 , H01L27/10885 , H01L27/10888 , H01L28/91 , H01L29/6659
摘要： A semiconductor device comprises a plurality of gate structures formed on a substrate, a gate spacer formed on a sidewall of the gate structures, a semiconductor pattern formed on the substrate between the gate structures, a first impurity region and a second impurity region formed in the semiconductor pattern and at surface portions of the substrate, respectively, wherein the first and second impurity regions include a first conductive type impurity, and a channel doping region surrounding the first impurity region, wherein the channel doping region includes a second conductive type impurity.
摘要翻译：半导体器件包括形成在衬底上的多个栅极结构，形成在栅极结构的侧壁上的栅极间隔物，形成在栅极结构之间的衬底上的半导体图案，形成在栅极结构中的第一杂质区域和第二杂质区域半导体图案和衬底的表面部分，其中第一和第二杂质区域包括第一导电类型杂质和围绕第一杂质区的沟道掺杂区域，其中沟道掺杂区域包括第二导电类型杂质。

24. 发明申请

US20060049445A1 Dram having at least three layered impurity regions between channel holes and method of fabricating same 失效
标题翻译：在通道孔之间具有至少三层杂质区和其制造方法
公开(公告)号：US20060049445A1
公开(公告)日：2006-03-09
申请号：US11210705
申请日：2005-08-25
申请人： Jin-Woo Lee , Yong-Sung Kim , Tae-Young Chung
发明人： Jin-Woo Lee , Yong-Sung Kim , Tae-Young Chung
IPC分类号： H01L27/108
CPC分类号： H01L29/0847 , H01L21/76895 , H01L27/10852 , H01L27/10876 , H01L27/10888 , H01L29/66621 , H01L29/66659
摘要： Disclosed is a dynamic random access memory (DRAM) comprising a transistor having channel holes formed in the channel region thereof and cell gate structures formed in the channel holes. At least three layered impurity regions are formed in a semiconductor substrate between the channel holes and the at least three layered impurity regions form a source region for the transistor.
摘要翻译：公开了一种动态随机存取存储器（DRAM），其包括晶体管，该晶体管具有在其沟道区中形成的沟道孔，并且形成在沟道孔中的单元栅极结构。在通道孔和至少三层杂质区之间的半导体衬底中形成至少三层杂质区，形成晶体管的源极区。

25. 发明申请

US20050282343A1 Method of forming transistor having channel region at sidewall of channel portion hole 失效
标题翻译：在通道部分孔的侧壁处形成具有沟道区的晶体管的方法
公开(公告)号：US20050282343A1
公开(公告)日：2005-12-22
申请号：US11156271
申请日：2005-06-17
申请人： Soo-Ho Shin , Jin-Woo Lee , Eun-Cheol Lee
发明人： Soo-Ho Shin , Jin-Woo Lee , Eun-Cheol Lee
IPC分类号： H01L21/336 , H01L21/8242
CPC分类号： H01L27/10873 , H01L27/10891 , H01L29/66787
摘要： According to some embodiments of the invention, a method of forming a transistor includes forming a device isolation layer in a semiconductor substrate. The device isolation layer is formed to define at least one active region. A channel region is formed in a predetermined portion of the active region of the semiconductor substrate. Two channel portion holes are formed to extend downward from a main surface of the semiconductor substrate to be in contact with the channel region. Gate patterns fill the channel portion holes and cross the active region. The resulting transistor is capable of ensuring a constant threshold voltage without being affected by an alignment state of the channel portion hole and the gate pattern.
摘要翻译：根据本发明的一些实施例，形成晶体管的方法包括在半导体衬底中形成器件隔离层。形成器件隔离层以限定至少一个有源区。沟道区形成在半导体衬底的有源区的预定部分中。形成两个通道部分孔，从半导体衬底的主表面向下延伸以与沟道区相接触。栅极图案填充沟道部分孔并穿过有源区。所得到的晶体管能够确保恒定的阈值电压，而不受沟道部分孔和栅极图案的取向状态的影响。

26. 发明授权

US10472061B2 Propeller-less drone using flow of wind 有权
公开(公告)号：US10472061B2
公开(公告)日：2019-11-12
申请号：US15296682
申请日：2016-10-18
申请人： Jin-Woo Lee
发明人： Jin-Woo Lee , Hwan-Tae Kim
IPC分类号： B64C39/02 , B64C39/06
摘要： The present disclosure relates to a drone with a wind guide, including a body, a single central inlet unit accommodated in the body, and configured to introduce wind therein, at least two pairs of wind guides, and at least four connecting ducts. Each wind guide is spaced apart from the body, and each connecting duct is connected with a respective wind guide of the at least two pairs of wind guides. The connecting duct is configured to transmit the wind introduced from the single central inlet unit to the connected respective wind guide.

27. 发明授权

US09171409B2 System and method for vehicle driving style determination 有权
标题翻译：车辆驾驶风格确定的系统和方法
公开(公告)号：US09171409B2
公开(公告)日：2015-10-27
申请号：US13100930
申请日：2011-05-04
申请人： Jin-Woo Lee , Bakhtiar Brian Litkouhi
发明人： Jin-Woo Lee , Bakhtiar Brian Litkouhi
IPC分类号： G06G7/70 , G07C5/08 , G07C5/00 , G06F17/00
CPC分类号： G07C5/085 , B60W40/09 , B60W2050/146 , B60W2520/105 , B60W2540/10 , G06F17/00 , G07C5/008
摘要： In one embodiment, a system and method may collect acceleration data for a driver for a vehicle, compare the acceleration data for the driver to a set of acceleration data representing a plurality of sample drivers driving in the same type of vehicle as the vehicle, and based on the comparison, determining a driving style rating for the driver.
摘要翻译：在一个实施例中，系统和方法可以收集用于车辆的驾驶员的加速度数据，将驾驶员的加速度数据与表示在与车辆相同类型的车辆中驾驶的多个样本驾驶员的一组加速度数据进行比较，以及基于比较，确定驾驶员的驾驶风格评级。

28. 发明授权

US08996273B2 Anticipatory cruise control 有权
标题翻译：预期巡航控制
公开(公告)号：US08996273B2
公开(公告)日：2015-03-31
申请号：US13600453
申请日：2012-08-31
申请人： Jin-Woo Lee , Shilpa Prabhuswamy
发明人： Jin-Woo Lee , Shilpa Prabhuswamy
IPC分类号： G06F17/00 , G01C21/20
CPC分类号： G01C21/20 , B60W30/143 , B60W2550/141 , B60W2550/146 , B60W2550/22 , B60W2550/402 , G01C21/3697 , G01S19/49
摘要： An anticipatory cruise control configured to automatically adjust travel speed responsively to upcoming changes in road conditions in a safe and comfortable manner.
摘要翻译：预期的巡航控制被配置为以安全和舒适的方式响应于路面状况的即将到来的变化来自动调整行驶速度。

29. 发明授权

US08965633B2 System and method for speed adaptive steering override detection during automated lane centering 有权
标题翻译：自动车道定心过程中速度自适应转向超越检测的系统和方法
公开(公告)号：US08965633B2
公开(公告)日：2015-02-24
申请号：US13224772
申请日：2011-09-02
申请人： Jin-Woo Lee , Bakhtiar Brian Litkouhi
发明人： Jin-Woo Lee , Bakhtiar Brian Litkouhi
IPC分类号： A01B69/00 , B62D6/00 , B62D1/28 , B62D6/02 , B62D15/02 , B60W50/10 , B60W30/12
CPC分类号： B62D1/286 , B60W30/12 , B60W50/10 , B62D6/00 , B62D6/02 , B62D15/025
摘要： One or more vehicle steering measurements of a vehicle may be measured. One or more expected vehicle steering measurements may be calculated, each calculated expected vehicle steering measurement corresponding to one of the measured vehicle steering measurements. At least one difference between one of the measured vehicle steering measurements and its corresponding calculated expected vehicle steering measurement may be calculated. A speed of the vehicle may be measured. One or more current threshold values may be calculated based on the measured speed, each of the current threshold values corresponding to one of the measured vehicle steering measurements and its corresponding calculated expected vehicle steering measurement. An automatic vehicle control system may be deactivated when one or more of the calculated differences exceeds its corresponding current threshold value.
摘要翻译：可以测量车辆的一个或多个车辆转向测量值。可以计算一个或多个预期的车辆转向测量值，每个计算的预期车辆转向测量值对应于所测量的车辆转向测量之一。可以计算测量的车辆转向测量值中的一个与其对应的计算的预期车辆转向测量之间的至少一个差。可以测量车辆的速度。可以基于测量的速度来计算一个或多个当前阈值，每个当前阈值对应于所测量的车辆转向测量值之一和其对应的计算的预期车辆转向测量值。当计算出的一个或多个差异超过其对应的当前阈值时，可以停用自动车辆控制系统。

30. 发明授权

US08872645B2 Method for road grade estimation for enhancing the fuel economy index calculation 有权
标题翻译：用于提高燃油经济性指标计算的道路等级估算方法
公开(公告)号：US08872645B2
公开(公告)日：2014-10-28
申请号：US13036071
申请日：2011-02-28
申请人： Jin-Woo Lee , Bakhtiar Brian Litkouhi , Elizabeth S Nunning
发明人： Jin-Woo Lee , Bakhtiar Brian Litkouhi , Elizabeth S Nunning
IPC分类号： B60Q1/00 , G01C9/00 , B60W40/076
CPC分类号： G01C9/00 , B60W40/076 , B60W2510/0604 , B60W2510/0638 , B60W2510/0657 , B60W2510/105 , B60W2520/105 , B60W2530/10 , B60W2540/10
摘要： A method is provided of estimating a road grade of a current driven road. A nominal value of a vehicle operating parameter is measured during a nominal vehicle operating condition. The vehicle operating parameter is related to a vehicle thrust power. The nominal value of the vehicle operating condition is comprised of a nominal acceleration corresponding to the nominal value when the vehicle is driven on a substantially non-inclined road. The nominal value and nominal acceleration is stored in a memory. An actual value of the vehicle operating parameter is determined during a current vehicle operating condition. A vehicle acceleration corresponding to the actual value of the vehicle operating parameter is measured. The road grade of the current driven road is estimated as a function of a comparison between the measured acceleration value and the nominal acceleration that would be expected for the actual value of the vehicle operating parameter.
摘要翻译：提供一种估计当前驱动道路的道路等级的方法。车辆工作参数的标称值在标称车辆运行状态下测量。车辆操作参数与车辆推力相关。当车辆在基本上非倾斜的道路上行驶时，车辆操作条件的标称值包括对应于标称值的标称加速度。标称值和标称加速度存储在存储器中。车辆操作参数的实际值在当前车辆操作状态期间确定。测量对应于车辆操作参数的实际值的车辆加速度。当前行驶道路的道路等级是根据车辆操作参数的实际值预期的测量加速度值与标称加速度之间的比较来估计的。

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