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21. 发明授权

US09030619B2 Semiconductor device, method for manufacturing semiconductor device, and liquid crystal display device 有权
标题翻译：半导体装置，半导体装置的制造方法以及液晶显示装置
公开(公告)号：US09030619B2
公开(公告)日：2015-05-12
申请号：US13992440
申请日：2011-11-29
申请人： Atsuhito Murai , Yukinobu Nakata , Shingo Kawashima , Jun Nishimura
发明人： Atsuhito Murai , Yukinobu Nakata , Shingo Kawashima , Jun Nishimura
IPC分类号： G02F1/1362 , G02F1/1335 , H01L29/786 , H01L27/12 , H01L29/66 , G02F1/1337 , G02F1/1333 , H01L27/32
CPC分类号： G02F1/136209 , G02F1/133345 , G02F1/133512 , G02F1/133707 , G02F2001/136222 , G02F2201/40 , H01L27/1225 , H01L27/3272 , H01L29/66969 , H01L29/78633 , H01L29/7869 , H01L29/78693
摘要： A semiconductor device (100A) according to the present invention includes: a thin-film transistor (10); a first insulating layer (9) which has been formed over the thin-film transistor (10); a second insulating layer (11) which has been formed on the first insulating layer (9) and which has a hole (21a); and an opaque layer (12a) which is arranged so as to overlap an oxide semiconductor layer (5) when viewed along a normal to the substrate (1). The opaque layer (12a) has been formed in the hole (21a). The opaque layer (12a) has a raised and curved upper surface and the upper surface of the second insulating layer (11) is located closer to the substrate (1) than the upper surface of the opaque layer (12a) is.
摘要翻译：根据本发明的半导体器件（100A）包括：薄膜晶体管（10）; 形成在薄膜晶体管（10）上的第一绝缘层（9）; 形成在第一绝缘层（9）上并具有孔（21a）的第二绝缘层（11）; 以及当沿着基板（1）的法线观察时，被布置成与氧化物半导体层（5）重叠的不透明层（12a）。不透明层（12a）已经形成在孔（21a）中。不透明层（12a）具有凸起且弯曲的上表面，并且第二绝缘层（11）的上表面比不透明层（12a）的上表面更靠近基板（1）。

22. 发明授权

US08753921B2 Manufacturing method for semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US08753921B2
公开(公告)日：2014-06-17
申请号：US13823247
申请日：2011-09-09
申请人： Tetsuo Fujita , Yukinobu Nakata , Tohru Daitoh
发明人： Tetsuo Fujita , Yukinobu Nakata , Tohru Daitoh
IPC分类号： H01L21/00 , H01L21/16 , C23C14/00 , C25B11/00 , C25B13/00
CPC分类号： H01L29/66969 , C23C14/08 , C23C14/086 , C23C14/3407 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/1225 , H01L29/7869
摘要： A method for producing a semiconductor device according to the present invention includes a step of sputtering a target (100A). The target (100A) includes a plurality of target tiles (11A) located while having a gap therebetween; a backing plate (15A) for supporting the plurality of target tiles (11A); and a bonding member (17A) provided between the backing plate (15A) and the plurality of target tiles (11A). The plurality of target tiles (11A) each contain In, Ga and Zn. When the target (100A) is seen in a direction normal thereto from the side on which the plurality of target tiles (11A) are located, the plurality of target tiles (11A) are each smaller than an insulating substrate (1), and the bonding member (17A) cannot be seen through the gap.
摘要翻译：根据本发明的半导体器件的制造方法包括溅射靶（100A）的步骤。目标（100A）包括位于同时具有间隙的多个目标瓦片（11A）用于支撑所述多个目标瓦片（11A）的背板（15A）; 以及设置在背板（15A）和多个目标瓦片（11A）之间的接合构件（17A）。多个目标瓦片（11A）各自包含In，Ga和Zn。当从多个目标瓦片（11A）所在的一侧沿着与其正交的方向看目标（100A）时，多个目标瓦片（11A）均小于绝缘基板（1），并且接合部件（17A）不能通过间隙看到。

23. 发明申请

US20140014951A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20140014951A1
公开(公告)日：2014-01-16
申请号：US13979478
申请日：2012-01-05
申请人： Shingo Kawashima , Yukinobu Nakata , Atsuhito Murai , Shinya Tanaka
发明人： Shingo Kawashima , Yukinobu Nakata , Atsuhito Murai , Shinya Tanaka
IPC分类号： H01L29/786
CPC分类号： H01L29/78693 , H01L29/247 , H01L29/41733 , H01L29/78606 , H01L29/78609 , H01L29/78633 , H01L29/7869 , H01L29/78696
摘要： A semiconductor device (100A) according to the present invention includes: an oxide semiconductor layer (4) having a first contact region (4a) and a second contact region (4b) and a channel region (4c) located between the first contact region (4a) and the second contact region (4b); a source electrode (5) formed on the oxide semiconductor layer (4) so as to be in contact with the first contact region (4a); and a drain electrode (6) formed on the oxide semiconductor layer (4) so as to be in contact with the second contact region (4b). All side faces of the oxide semiconductor layer (4) are located over the gate electrode (2); a width of the source electrode (5) is greater than a width of the oxide semiconductor layer (4); and a width of the drain electrode (6) is greater than a width of the oxide semiconductor layer (4).
摘要翻译：根据本发明的半导体器件（100A）包括：具有第一接触区域（4a）和第二接触区域（4b）的氧化物半导体层（4）和位于第一接触区域之间的沟道区域（4c） 4a）和第二接触区域（4b）; 形成在所述氧化物半导体层（4）上以与所述第一接触区域（4a）接触的源电极（5）; 以及形成在所述氧化物半导体层（4）上以与所述第二接触区域（4b）接触的漏电极（6）。氧化物半导体层（4）的所有侧面都位于栅电极（2）的上方。源电极（5）的宽度大于氧化物半导体层（4）的宽度; 并且所述漏电极（6）的宽度大于所述氧化物半导体层（4）的宽度。

24. 发明申请

US20140009713A1 SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND LIQUID CRYSTAL DISPLAY DEVICE 有权
标题翻译：半导体器件，制造半导体器件的方法和液晶显示器件
公开(公告)号：US20140009713A1
公开(公告)日：2014-01-09
申请号：US13992440
申请日：2011-11-29
申请人： Atsuhito Murai , Yukinobu Nakata , Shingo Kawashima , Jun Nishimura
发明人： Atsuhito Murai , Yukinobu Nakata , Shingo Kawashima , Jun Nishimura
IPC分类号： G02F1/1335 , H01L29/66 , H01L29/786
CPC分类号： G02F1/136209 , G02F1/133345 , G02F1/133512 , G02F1/133707 , G02F2001/136222 , G02F2201/40 , H01L27/1225 , H01L27/3272 , H01L29/66969 , H01L29/78633 , H01L29/7869 , H01L29/78693
摘要： A semiconductor device (100A) according to the present invention includes: a thin-film transistor (10); a first insulating layer (9) which has been formed over the thin-film transistor (10); a second insulating layer (11) which has been formed on the first insulating layer (9) and which has a hole (21a); and an opaque layer (12a) which is arranged so as to overlap an oxide semiconductor layer (5) when viewed along a normal to the substrate (1). The opaque layer (12a) has been formed in the hole (21a). The opaque layer (12a) has a raised and curved upper surface and the upper surface of the second insulating layer (11) is located closer to the substrate (1) than the upper surface of the opaque layer (12a) is.
摘要翻译：根据本发明的半导体器件（100A）包括：薄膜晶体管（10）; 形成在薄膜晶体管（10）上的第一绝缘层（9）; 形成在第一绝缘层（9）上并具有孔（21a）的第二绝缘层（11）; 以及当沿着基板（1）的法线观察时，被布置成与氧化物半导体层（5）重叠的不透明层（12a）。不透明层（12a）已经形成在孔（21a）中。不透明层（12a）具有凸起且弯曲的上表面，并且第二绝缘层（11）的上表面比不透明层（12a）的上表面更靠近基板（1）。

25. 发明申请

US20130181217A1 SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND DISPLAY DEVICE 有权
公开(公告)号：US20130181217A1
公开(公告)日：2013-07-18
申请号：US13823872
申请日：2011-09-30
申请人： Yoshihito Hara , Yukinobu Nakata
发明人： Yoshihito Hara , Yukinobu Nakata
IPC分类号： H01L29/786 , H01L29/66
CPC分类号： H01L27/124 , G02F1/13458 , G02F1/136227 , G02F2001/13629 , G02F2001/136295 , H01L27/1225 , H01L27/1255 , H01L27/1288 , H01L27/3262 , H01L29/41733 , H01L29/42384 , H01L29/7869 , H05B33/02
摘要： A semiconductor device (100) according to the present invention includes a thin film transistor (10) having a gate electrode (62a), a first insulating layer (64), an oxide semiconductor layer (66a), a protection layer (68), a source electrode (72as), and a second insulating layer (74). A first connecting portion (30) includes a lower metal layer (72c), an upper metal layer (72c), and an insulating layer (74). A second connecting portion (40) includes a lower metal layer (72d) and an upper conductive layer (17d). A region in which the lower metal layer (72d) is in contact with the upper conductive layer (17d), and a region in which an insulating layer (74) made of a same material as the first insulating layer and a semiconductor layer (66d) made of a same material as the oxide semiconductor layer (66a) are stacked in between the lower metal layer (72d) and the upper conductive layer (17d), are formed in the second connecting portion (40). As a result, a semiconductor device with a higher performance can be provided with a high production efficiency.

26. 发明申请

US20130153904A1 SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCTION THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20130153904A1
公开(公告)日：2013-06-20
申请号：US13819352
申请日：2011-08-26
申请人： Jun Nishimura , Yukinobu Nakata , Yoshihito Hara
发明人： Jun Nishimura , Yukinobu Nakata , Yoshihito Hara
IPC分类号： H01L27/04 , H01L21/82
CPC分类号： H01L27/04 , G02F1/133345 , G02F1/136213 , G02F1/136227 , G02F1/1368 , H01L21/82 , H01L27/1225 , H01L27/1255
摘要： A semiconductor device (1000) includes a thin film transistor having a gate line (3a), source and drain lines (13as, 13ad), and an island-like oxide semiconductor layer (7), and a capacitor element (105) having a first electrode (3b) formed from the same conductive film as the gate line (3s), a second electrode (13b) formed from the same conductive film as the source line (13as), and a dielectric layer positioned between the first electrode and the second electrode. A gate insulating film (5) has a layered structure including a first insulating layer (5A) containing an oxide and a second insulating layer (5B) disposed on the side closer to the gate electrode closer than the first insulating film and having a higher dielectric constant than the first insulating film, the layered structure being in contact with the oxide semiconductor layer (7). The dielectric layer includes the second insulating film (5B) but does not include the first insulating film (5A). Accordingly, the deterioration of the oxide semiconductor layer due to oxygen deficiency can be suppressed without reducing the capacitance value of the capacitor element).
摘要翻译：半导体器件（1000）包括具有栅极线（3a），源极和漏极线（13as，13ad）和岛状氧化物半导体层（7）的薄膜晶体管，以及电容器元件（105），其具有由与栅极线（3s）相同的导电膜形成的第一电极（3b），由与源极线（13as）相同的导电膜形成的第二电极（13b）以及位于第一电极第二电极。栅极绝缘膜（5）具有层叠结构，该层叠结构具有包含氧化物的第一绝缘层（5A）和位于比第一绝缘膜更靠近栅电极的一侧的第二绝缘层（5B），并且具有较高的电介质与第一绝缘膜恒定，层状结构与氧化物半导体层（7）接触。电介质层包括第二绝缘膜（5B），但不包括第一绝缘膜（5A）。因此，可以抑制氧缺陷导致的氧化物半导体层的劣化，而不会降低电容器元件的电容值）。

27. 发明申请

US20120140158A1 LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR MANUFACTURING LIQUID CRYSTAL DISPLAY DEVICE 审中-公开
标题翻译：液晶显示装置及制造液晶显示装置的方法
公开(公告)号：US20120140158A1
公开(公告)日：2012-06-07
申请号：US13390386
申请日：2010-06-25
申请人： Hijiri Nakahara , Yukinobu Nakata , Takaharu Yamada , Seiji Muraoka
发明人： Hijiri Nakahara , Yukinobu Nakata , Takaharu Yamada , Seiji Muraoka
IPC分类号： G02F1/1343 , H01J9/24
CPC分类号： G02F1/1345 , G02F1/13458
摘要： A pad section 112 of a liquid crystal display device and a main surface of a substrate located in a periphery of the pad section 112 are formed so as to be exposed from a multilayer film 109. The pad section 112 is formed of an aluminum alloy material film, and the difference between a potential of the aluminum alloy material film and that of an ITO film is smaller than the difference between a potential of an aluminum film and that of the ITO film.
摘要翻译：形成液晶显示装置的焊盘部112和位于焊盘部112的周围的基板的主面，从多层膜109露出。焊盘部112由铝合金材料并且铝合金材料膜和ITO膜的电位之间的差异小于铝膜的电位和ITO膜的电位之差。

28. 发明申请

US20120140157A1 LIQUID-CRYSTAL DISPLAY DEVICE AND MANUFACTURING METHOD THEREFOR 有权
标题翻译：液晶显示器件及其制造方法
公开(公告)号：US20120140157A1
公开(公告)日：2012-06-07
申请号：US13386748
申请日：2010-07-23
申请人： Shogo Nishiwaki , Kunihiro Tashiro , Yukinobu Nakata , Takayuki Hayano
发明人： Shogo Nishiwaki , Kunihiro Tashiro , Yukinobu Nakata , Takayuki Hayano
IPC分类号： G02F1/1337 , H01L33/08
CPC分类号： G02F1/133711 , G02F2001/136254
摘要： A method of producing a liquid crystal display device according to the present invention includes: a step of providing a liquid crystal panel (110); a step of, through light irradiation while applying a voltage to a mixture via a check terminal (174) and a check line (172) on a rear substrate (130), forming from the mixture a liquid crystal layer (140) containing a liquid crystal compound and an alignment sustaining layer (150, 160) resulting through polymerization of a photopolymerizable compound; and a step of, after forming the liquid crystal layer (140) and the alignment sustaining layer (150, 160), applying a voltage across the liquid crystal layer (140) from the check terminal (172) to check the liquid crystal panel (110).
摘要翻译：根据本发明的液晶显示装置的制造方法包括：提供液晶面板（110）的工序; 通过在后衬底（130）上的检查端子（174）和检查线（172）向混合物施加电压的步骤，从混合物形成含有液体的液晶层（140）晶体化合物和通过光聚合化合物的聚合得到的取向维持层（150,160）; 以及在形成所述液晶层（140）和所述取向维持层（150,160）之后，从所述检查端子（172）向所述液晶层（140）施加电压以检查所述液晶面板（ 110）。

29. 发明授权

US08860920B2 Liquid-crystal display device and manufacturing method therefor 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US08860920B2
公开(公告)日：2014-10-14
申请号：US13386748
申请日：2010-07-23
申请人： Shogo Nishiwaki , Kunihiro Tashiro , Yukinobu Nakata , Takayuki Hayano
发明人： Shogo Nishiwaki , Kunihiro Tashiro , Yukinobu Nakata , Takayuki Hayano
IPC分类号： G02F1/13 , G02F1/1345 , G02F1/1337 , G02F1/1362
CPC分类号： G02F1/133711 , G02F2001/136254
摘要： A method of producing a liquid crystal display device according to the present invention includes: a step of providing a liquid crystal panel (110); a step of, through light irradiation while applying a voltage to a mixture via a check terminal (174) and a check line (172) on a rear substrate (130), forming from the mixture a liquid crystal layer (140) containing a liquid crystal compound and an alignment sustaining layer (150, 160) resulting through polymerization of a photopolymerizable compound; and a step of, after forming the liquid crystal layer (140) and the alignment sustaining layer (150, 160), applying a voltage across the liquid crystal layer (140) from the check terminal (172) to check the liquid crystal panel (110).
摘要翻译：根据本发明的液晶显示装置的制造方法包括：提供液晶面板（110）的工序; 通过在后衬底（130）上的检查端子（174）和检查线（172）向混合物施加电压的步骤，从混合物形成含有液体的液晶层（140）晶体化合物和通过光聚合化合物的聚合得到的取向维持层（150,160）; 以及在形成所述液晶层（140）和所述取向维持层（150,160）之后，从所述检查端子（172）向所述液晶层（140）施加电压以检查所述液晶面板（ 110）。

30. 发明授权

US08829517B2 Substrate, method for fabricating the same, and display device 有权
标题翻译：基板，其制造方法以及显示装置
公开(公告)号：US08829517B2
公开(公告)日：2014-09-09
申请号：US13810944
申请日：2011-07-14
申请人： Yoshihito Hara , Yukinobu Nakata
发明人： Yoshihito Hara , Yukinobu Nakata
IPC分类号： H01L29/10 , H01L29/786 , H01L27/12 , G02F1/1345 , G02F1/1362 , H01L27/32 , H01L29/66
CPC分类号： H01L29/78693 , G02F1/13458 , G02F1/136227 , H01L27/1225 , H01L27/124 , H01L27/3276 , H01L29/66969
摘要： A TFT substrate (20a) includes: an insulating substrate (10a); a plurality of source terminals (15) located on the insulating substrate (10a); and a first terminal cover (24) covering part of each of the source terminals (15) and made of an oxide semiconductor. The first terminal cover (24) is removed in a region R between adjacent ones of the source terminals (15).
摘要翻译： TFT基板（20a）包括：绝缘基板（10a）; 位于绝缘基板（10a）上的多个源极端子（15）; 以及覆盖每个源极端子（15）的一部分并由氧化物半导体制成的第一端子盖（24）。在相邻的源极端子（15）之间的区域R中去除第一端子盖（24）。

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