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21. 发明授权

US06246454B1 Active matrix liquid crystal display and method of fabricating same 失效
标题翻译：有源矩阵液晶显示器及其制造方法
公开(公告)号：US06246454B1
公开(公告)日：2001-06-12
申请号：US08770785
申请日：1996-12-20
申请人： Jun Koyama , Yoshitaka Yamamoto
发明人： Jun Koyama , Yoshitaka Yamamoto
IPC分类号： G02F1136
CPC分类号： G02F1/136204 , G02F1/13454
摘要： There is disclosed a small-sized, active matrix liquid crystal display having high reliability. The liquid crystal display comprises a TFT substrate, a counter substrate, and a layer of a liquid crystal material held between these two substrates. A plurality of pixel TFTs are arranged in rows and columns on the TFT substrate. Driver TFTs forming a driver circuit for driving the pixel TFTs are formed also on the TFT substrate. All of these TFTs are covered by the liquid crystal material directly or via a thin film to protect these TFTs. A short ring is cut after a rubbing operation and before bonding of the substrates. Therefore, during manufacturing, the TFTs are protected from static charges. Also, the cutting operation is facilitated.
摘要翻译：公开了具有高可靠性的小尺寸有源矩阵液晶显示器。液晶显示器包括TFT基板，对置基板和保持在这两个基板之间的液晶材料层。多个像素TFT在TFT基板上以行和列布置。形成用于驱动像素TFT的驱动电路的驱动TFT也形成在TFT基板上。所有这些TFT直接或通过薄膜被液晶材料覆盖以保护这些TFT。在摩擦操作之后和基板粘合之前切割短环。因此，在制造过程中，保护TFT免受静电。此外，切割操作便利。

22. 发明授权

US06211535B1 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US06211535B1
公开(公告)日：2001-04-03
申请号：US09426947
申请日：1999-10-26
申请人： Yoshitaka Yamamoto , Hideomi Suzawa , Katunobu Awane , Fumiaki Funada , Shunpei Yamazaki
发明人： Yoshitaka Yamamoto , Hideomi Suzawa , Katunobu Awane , Fumiaki Funada , Shunpei Yamazaki
IPC分类号： H01L2348
CPC分类号： H01L29/66757 , H01L29/78621 , H01L29/78675
摘要： Method of forming an active layer for TFTs without plasma-damaging the side surfaces of the active layer. The method is started with forming a crystalline silicon film on a glass substrate. A resist mask is placed on the silicon film. The silicon film is etched with an etchant gas consisting mainly of a halogen fluoride gas, thus forming the active layer. During this process, the etchant gas is not changed into a plasma to prevent the side surfaces of the active layer from being plasma-damaged. ClF3 can be used as the halogen fluoride gas.
摘要翻译：形成TFT的有源层的方法，不会对有源层的侧表面造成等离子体损害。该方法开始于在玻璃基板上形成结晶硅膜。将抗蚀剂掩模放置在硅膜上。用主要由卤素氟化物气体组成的蚀刻剂气体蚀刻硅膜，从而形成活性层。在该过程中，蚀刻剂气体不会变成等离子体，以防止有源层的侧表面被等离子体损坏。 ClF3可用作卤素氟化物气体。

23. 发明授权

US06175351B1 Image display apparatus and a method for driving the same 失效
标题翻译：图像显示装置及其驱动方法
公开(公告)号：US06175351B1
公开(公告)日：2001-01-16
申请号：US08959530
申请日：1997-10-24
申请人： Manabu Matsuura , Hiroshi Yoneda , Yoshitaka Yamamoto , Yutaka Ishii , Shigeto Yoshida
发明人： Manabu Matsuura , Hiroshi Yoneda , Yoshitaka Yamamoto , Yutaka Ishii , Shigeto Yoshida
IPC分类号： G09G336
CPC分类号： G09G3/3614 , G09G3/3648 , G09G3/3688 , G09G2300/0408 , G09G2300/0809 , G09G2300/0814 , G09G2300/0842 , G09G2310/0205 , G09G2310/0229 , G09G2310/0235 , G09G2310/0297 , G09G2320/0209 , G09G2320/0247
摘要： The image display apparatus of the present invention including a display device having a plurality of pixels arranged in a matrix and driven by a field sequential scanning system, includes: a display driving circuit for supplying a display signal to each of the pixels; a scanning circuit for supplying a scanning signal to each of the pixels, the scanning circuit allowing the pixel to receive a charge corresponding to the display signal during a predetermined write time; and a write time modulation circuit for modulating the write time of the pixel according to the progress of the scanning by the scanning circuit.
摘要翻译：本发明的图像显示装置包括：具有排列成矩阵并由场顺序扫描系统驱动的多个像素的显示装置，包括：显示驱动电路，用于向每个像素提供显示信号; 用于向每个像素提供扫描信号的扫描电路，所述扫描电路允许所述像素在预定写入时间期间接收对应于所述显示信号的电荷; 以及写入时间调制电路，用于根据扫描电路的扫描进度来调制像素的写入时间。

24. 发明授权

US5926735A Method of forming semiconductor device 失效
标题翻译：半导体器件形成方法
公开(公告)号：US5926735A
公开(公告)日：1999-07-20
申请号：US802685
申请日：1997-02-19
申请人： Shunpei Yamazaki , Naoaki Yamaguchi , Yuugo Goto , Satoshi Teramoto , Katunobu Awane , Yoshitaka Yamamoto , Toshimasa Hamada
发明人： Shunpei Yamazaki , Naoaki Yamaguchi , Yuugo Goto , Satoshi Teramoto , Katunobu Awane , Yoshitaka Yamamoto , Toshimasa Hamada
IPC分类号： H01L21/28 , H01L21/336 , H01L21/768 , H01L21/77 , H01L21/84 , H01L21/4763
CPC分类号： H01L29/66757 , H01L21/28079 , H01L21/76802 , H01L27/124
摘要： There is disclosed a manufacturing method of highly integrated circuits with thin-film transistors (TFTs) for use as peripheral driver circuitry in active-matrix liquid crystal display (LCD) panel with a pixel array each having a charge transfer control TFT, capable of facilitating formation of contact holes otherwise being difficult in cases where an anode oxide film is formed on gate electrodes of TFTs and lead wires both of which are made of anodizable metal, such as aluminum. The method includes execution of anodization while causing a resist mask to be disposed on part of the lead wire and electrode made of aluminum, thereby partly eliminating formation of the anode oxide film on the lead wire and electrode. At a later step of fabrication, each contact is formed by use of such portion that has no anode oxide film formed thereon. This may allow aluminum to be employed as lead wires while enabling easy fabrication of contacts therefor.
摘要翻译：公开了一种具有薄膜晶体管（TFT）的高度集成电路的制造方法，用作有源矩阵液晶显示器（LCD）面板中的外围驱动电路，每个像素阵列均具有电荷转移控制TFT，能够促进在由诸如铝的阳极氧化金属制成的TFT和引线的栅电极上形成阳极氧化膜的情况下，形成接触孔是困难的。该方法包括执行阳极氧化，同时使抗蚀剂掩模设置在由铝制成的引线和电极的一部分上，从而部分地消除在引线和电极上形成阳极氧化膜。在后面的制造步骤中，通过使用其上没有形成阳极氧化膜的部分形成每个接触。这可以允许使用铝作为引线，同时能够容易地制造用于其的触点。

25. 发明授权

US5790219A Color liquid-crystal display panel with black-mask overlapping color-filter more on downwardly rubbing side of switching element 失效
标题翻译：彩色液晶显示面板，在开关元件的下侧更多地具有黑色掩模重叠的彩色滤光片
公开(公告)号：US5790219A
公开(公告)日：1998-08-04
申请号：US542189
申请日：1995-10-12
申请人： Nobuyasu Yamagishi , Yoshitaka Yamamoto
发明人： Nobuyasu Yamagishi , Yoshitaka Yamamoto
IPC分类号： G02F1/1333 , G02F1/1335 , G02F1/1337 , G02F1/136 , G02F1/1362 , G02F1/1368
CPC分类号： G02F1/133512 , G02F1/136213 , G02F2001/13373
摘要： A color liquid-crystal display panel comprising switching elements, pixel electrodes, and feed wirings made of plural thinfilm layers deposited on the internal surface of one of the substrates, a color filter having an unevenness of more than 0.3 .mu.m, a black mask, and a liquid-crystal layer disposed between said two substrates, wherein the length of overlap of the black-mask over the color filter for every pixel is slightly different at least in a direction within a plane parallel to said substrate in order to prevent the generation of inverse tilt domain in the rub-down area caused by an application of rubbing, attaining a high image quality without light leakage.
摘要翻译：一种彩色液晶显示面板，包括由一个基板的内表面上沉积的多个薄膜层构成的开关元件，像素电极和馈线，具有大于0.3μm的不平坦度的滤色器，黑色掩模，以及设置在所述两个基板之间的液晶层，其中，对于每个像素，黑色掩模在滤色器上的重叠长度至少在与所述基板平行的平面内的方向上稍微不同，以防止产生在施加摩擦引起的摩擦区域中的反倾斜域，在没有漏光的情况下获得高图像质量。

26. 发明授权

US5659332A Display unit of input integral type 失效
标题翻译：输入积分型显示单元
公开(公告)号：US5659332A
公开(公告)日：1997-08-19
申请号：US361844
申请日：1994-12-21
申请人： Yutaka Ishii , Yoshitaka Yamamoto
发明人： Yutaka Ishii , Yoshitaka Yamamoto
IPC分类号： G06F3/041 , G02F1/1333 , G02F1/1362 , G06F3/033 , G09G3/36 , G09G3/18
CPC分类号： G06F3/0412 , G02F1/1326 , G02F1/136277
摘要： A display unit of an input integral type has a display panel provided with a liquid crystal as a display medium. In the display unit, an optical waveguide is integrally formed in the shape of a matrix and approximately guides light having a predetermined wavelength in parallel with a surface of a display substrate.
摘要翻译：输入一体型的显示单元具有设置有作为显示介质的液晶的显示面板。在显示单元中，光波导一体地形成为矩阵形状并且大致引导具有与显示基板的表面平行的预定波长的光。

27. 发明授权

US5515316A Non-volatile memory device having a memory medium containing a liquid crystal compound 失效
标题翻译：具有包含液晶化合物的存储介质的非易失性存储器件
公开(公告)号：US5515316A
公开(公告)日：1996-05-07
申请号：US896097
申请日：1992-06-10
申请人： Yoshitaka Yamamoto , Yutaka Ishii
发明人： Yoshitaka Yamamoto , Yutaka Ishii
IPC分类号： G02F1/141 , G11C11/22 , G11C13/02 , G11C7/00 , G02F1/133
CPC分类号： G11C11/22 , B82Y10/00 , G02F1/141
摘要： A non-volatile memory device which includes a recording medium, a heating means for heating the recording medium, a reading means for reading the information stored in the recording medium, and the recording medium containing a liquid crystal compound.
摘要翻译：一种包括记录介质的非易失性存储器件，用于加热记录介质的加热装置，用于读取存储在记录介质中的信息的读取装置和包含液晶化合物的记录介质。

28. 发明授权

US4966978A Process for separating indole in refined form 失效
标题翻译：以精制形式分离吲哚的方法
公开(公告)号：US4966978A
公开(公告)日：1990-10-30
申请号：US363084
申请日：1989-06-08
申请人： Yoshiki Sato , Yoshitaka Yamamoto , Yutaka Mito , Harumasa Tanabe
发明人： Yoshiki Sato , Yoshitaka Yamamoto , Yutaka Mito , Harumasa Tanabe
IPC分类号： C07D209/04 , A61K8/49 , A61Q13/00 , B01D9/02 , C07D209/06 , C07D209/08 , C11B9/00 , C11B9/02
CPC分类号： C07D209/06 , C07D209/08
摘要： Described herein is a process for separating solid indole in refined form with an extremely high degree of purity from a mixture containing more than 50 wt % of indole, in which a pressure of 700-2500 atms is applied to the mixture in a high pressure vessel, and solid-liquid separation is effected continuedly under pressurized state with an initial temperature in the range of 50.degree.-65.degree. C.
摘要翻译：本文描述了一种从含有大于50重量％的吲哚的混合物中以极高纯度分离精制形式的固体吲哚的方法，其中将700-2500atm的压力施加到高压容器中的混合物，并且在加压状态下连续进行固液分离，初始温度在50-65℃的范围内。

29. 发明授权

US09525023B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09525023B2
公开(公告)日：2016-12-20
申请号：US13473643
申请日：2012-05-17
申请人： Hidekazu Miyairi , Koji Dairiki , Yasuhiro Jinbo , Tomohiro Kimura , Yoshitaka Yamamoto
发明人： Hidekazu Miyairi , Koji Dairiki , Yasuhiro Jinbo , Tomohiro Kimura , Yoshitaka Yamamoto
IPC分类号： H01L29/10 , H01L29/04 , H01L29/417 , H01L29/786
CPC分类号： H01L29/04 , H01L29/41733 , H01L29/78618 , H01L29/78672 , H01L29/78678 , H01L29/78696
摘要： One embodiment of the present invention is a semiconductor device which includes a gate electrode; a gate insulating film formed to cover the gate electrode; a semiconductor layer formed over the gate insulating film and placed above the gate electrode; a second insulating film formed over the semiconductor layer; a first insulating film formed over a top surface and a side surface of the second insulating film, a side surface of the semiconductor layer, and the gate insulating film; silicon layers and which are formed over the first insulating film and electrically connected to the semiconductor layer; and a source electrode and a drain electrode which are formed over the silicon layers. The source electrode and the drain electrode are electrically separated from each other over the first insulating film. The semiconductor layer is not in contact with each of the source electrode and the drain electrode.
摘要翻译：本发明的一个实施例是包括栅电极的半导体器件; 形成为覆盖所述栅电极的栅极绝缘膜; 形成在所述栅极绝缘膜上并位于所述栅极电极上方的半导体层; 形成在所述半导体层上的第二绝缘膜; 形成在第二绝缘膜的顶表面和侧表面上的第一绝缘膜，半导体层的侧表面和栅极绝缘膜; 硅层，其形成在第一绝缘膜上并电连接到半导体层; 以及形成在硅层上的源电极和漏电极。源电极和漏电极在第一绝缘膜上彼此电分离。半导体层不与源电极和漏电极中的每一个接触。

30. 发明授权

US09362411B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09362411B2
公开(公告)日：2016-06-07
申请号：US13861587
申请日：2013-04-12
申请人： Kenichi Okazaki , Masatoshi Yokoyama , Masayuki Sakakura , Yukinori Shima , Yosuke Kanzaki , Hiroshi Matsukizono , Takuya Matsuo , Yoshitaka Yamamoto
发明人： Kenichi Okazaki , Masatoshi Yokoyama , Masayuki Sakakura , Yukinori Shima , Yosuke Kanzaki , Hiroshi Matsukizono , Takuya Matsuo , Yoshitaka Yamamoto
IPC分类号： H01L21/02 , H01L29/786 , H01L29/66
CPC分类号： H01L29/7869 , H01L21/02172 , H01L29/66742 , H01L29/66969 , H01L29/78606 , H01L29/78696
摘要： An object is to suppress conducting-mode failures of a transistor that uses an oxide semiconductor film and has a short channel length. A semiconductor device includes a gate electrode 304, a gate insulating film 306 formed over the gate electrode, an oxide semiconductor film 308 over the gate insulating film, and a source electrode 310a and a drain electrode 310b formed over the oxide semiconductor film. The channel length L of the oxide semiconductor film is more than or equal to 1 μm and less than or equal to 50 μm. The oxide semiconductor film has a peak at a rotation angle 2θ in the vicinity of 31° in X-ray diffraction measurement.
摘要翻译：目的是抑制使用氧化物半导体膜并具有短沟道长度的晶体管的导通模式故障。半导体器件包括栅电极304，形成在栅电极上的栅极绝缘膜306，栅极绝缘膜上的氧化物半导体膜308以及形成在氧化物半导体膜上的源电极310a和漏电极310b。氧化物半导体膜的沟道长度L大于等于1μm且小于等于50μm。氧化物半导体膜具有在旋转角2θ处的峰值; 在X射线衍射测量中在31°附近。

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