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21. 发明授权

US07332027B2 Method for manufacturing aluminum nitride single crystal 有权
标题翻译：制造氮化铝单晶的方法
公开(公告)号：US07332027B2
公开(公告)日：2008-02-19
申请号：US11172108
申请日：2005-06-30
申请人： Yoshimasa Kobayashi , Toru Hayase , Naohito Yamada
发明人： Yoshimasa Kobayashi , Toru Hayase , Naohito Yamada
IPC分类号： C30B25/12
CPC分类号： C30B29/403 , C30B23/002
摘要： A method for manufacturing an aluminum nitride single crystal is provided, including the steps of preparing a raw material composition containing aluminum oxide and/or an aluminum oxide precursor which is converted into aluminum oxide by heating, and aluminum nitride and/or an aluminum nitride precursor which is converted into aluminum nitride by heating, heating the raw material composition at 1600 to 2400° C. to synthesize aluminum nitride, and causing crystal growth of the aluminum nitride to obtain an aluminum nitride single crystal.
摘要翻译：提供了一种制造氮化铝单晶的方法，包括以下步骤：制备含有氧化铝和/或氧化铝前体的原料组合物，其通过加热转化为氧化铝，以及氮化铝和/或氮化铝前体通过加热转化成氮化铝，在1600〜2400℃加热原料组合物，合成氮化铝，使氮化铝晶体生长，得到氮化铝单晶。

22. 发明申请

US20060019817A1 Aluminum nitride ceramic, semiconductor manufacturing member, and manufacturing method for aluminum nitride ceramic 有权
标题翻译：氮化铝陶瓷，半导体制造部件和氮化铝陶瓷的制造方法
公开(公告)号：US20060019817A1
公开(公告)日：2006-01-26
申请号：US11153921
申请日：2005-06-15
申请人： Yoshimasa Kobayashi , Naohito Yamada , Toru Hayase
发明人： Yoshimasa Kobayashi , Naohito Yamada , Toru Hayase
IPC分类号： C04B35/581
CPC分类号： C04B35/581 , C04B35/645 , C04B35/65 , C04B41/009 , C04B41/5031 , C04B41/87 , C04B2235/3201 , C04B2235/3206 , C04B2235/3217 , C04B2235/3222 , C04B2235/3224 , C04B2235/3225 , C04B2235/3229 , C04B2235/652 , C04B2235/75 , C04B2235/80 , C04B2235/85 , C04B2235/9692 , Y10T428/2975 , C04B41/4535 , C04B41/5029 , C04B41/5045 , C04B41/0072 , C04B41/4519 , C04B41/455 , C04B41/53
摘要： An aluminum nitride ceramic including aluminum nitride grains and grain boundary phases comprises a grain boundary phase-rich layer including more amount of the grain boundary phases in a surface layer of the aluminum nitride ceramic than in an inside of the aluminum nitride ceramic. The grain boundary phases in the grain boundary phase-rich layer include at least one of rare earth element and alkali earth element.
摘要翻译：包括氮化铝颗粒和晶界相的氮化铝陶瓷包括在氮化铝陶瓷的表面层中包含比在氮化铝陶瓷的内部包含更多量的晶界相的晶界相富集层。晶界相富层中的晶界相包括稀土元素和碱土元素中的至少一种。

23. 发明申请

US20090283933A1 CERAMIC MEMBER AND METHOD FOR PRODUCING THE SAME 审中-公开
标题翻译：陶瓷构件及其制造方法
公开(公告)号：US20090283933A1
公开(公告)日：2009-11-19
申请号：US12511339
申请日：2009-07-29
申请人： Yoshimasa Kobayashi , Toru Hayase , Naohito Yamada
发明人： Yoshimasa Kobayashi , Toru Hayase , Naohito Yamada
IPC分类号： B29B13/02
CPC分类号： C04B35/581 , C04B35/6303 , C04B35/645 , C04B37/021 , C04B2235/3225 , C04B2235/5436 , C04B2235/5445 , C04B2235/608 , C04B2235/6581 , C04B2235/77 , C04B2237/366 , C04B2237/403 , H01L21/67103 , H01L21/6831
摘要： A ceramic member is provided, including a ceramic sintered body and a metallic member, which includes a metal element, formed to be in contact with the ceramic sintered body. An affected layer around the metallic member of the ceramic sintered body has a thickness of 300 μm or less.
摘要翻译：提供一种陶瓷构件，其包括陶瓷烧结体和金属构件，其包括形成为与陶瓷烧结体接触的金属元件。陶瓷烧结体的金属构件周围的受影响层的厚度为300μm以下。

24. 发明授权

US07288496B2 Aluminum nitride sintered body and method of evaluation for the same 有权
标题翻译：氮化铝烧结体及其评价方法
公开(公告)号：US07288496B2
公开(公告)日：2007-10-30
申请号：US10871351
申请日：2004-06-18
申请人： Yoshimasa Kobayashi , Toru Hayase , Naohito Yamada
发明人： Yoshimasa Kobayashi , Toru Hayase , Naohito Yamada
IPC分类号： C04B35/581
CPC分类号： C04B35/581 , C04B35/6303 , C04B35/645 , C04B2235/3217 , C04B2235/3222 , C04B2235/3225 , C04B2235/3418 , C04B2235/3869 , C04B2235/80 , C04B2235/85 , C04B2235/96 , C04B2235/963 , Y10T279/23
摘要： An aluminum nitride sintered body is provided, including a polycrystalline structure in which grain boundary fracture toughness KICgb is 1.6 MPa·m1/2 or more. The grain boundary fracture toughness KICgb is determined by the equation KICgb=KIC·cos2(π·PIF/200), wherein KIC is fracture toughness (MPa·m1/2), and PIF is a percentage of the intergranular fracture (%).
摘要翻译：提供了一种氮化铝烧结体，其包括其晶界断裂韧性K > >为1.6MPa.m 1/2的多晶结构，或者更多。晶界断裂韧性K IC b b>>>> IC IC IC IC IC IC IC IC IC IC IC IC IC IC IC IC IC IC IC IC IC IC IC IC IC IC IC IC IC IC IC IC IC IC IC IC IC （pi.PIF / 200），其中K是断裂韧性（MPa.m <0.01），PIF是晶间骨折的百分比（％）。

25. 发明申请

US20070169689A1 Manufacturing method of aluminum nitride single crystal and aluminum nitride single crystal 审中-公开
标题翻译：氮化铝单晶和氮化铝单晶的制造方法
公开(公告)号：US20070169689A1
公开(公告)日：2007-07-26
申请号：US11649137
申请日：2007-01-03
申请人： Yoshimasa Kobayashi , Naohito Yamada
发明人： Yoshimasa Kobayashi , Naohito Yamada
IPC分类号： H01L21/20
CPC分类号： C30B23/00 , C30B29/40
摘要： A seed crystal is formed of a rod-like aluminum nitride single crystal whose length direction is oriented to the c-axis direction. Exposed surface on the side portion thereof on which an aluminum nitride material is grown into a crystal has an inclination of 90° relative to a {0001} surface. With this configuration, an aluminum nitride single crystal with excellent crystallinity can be manufactured.
摘要翻译：晶种由长度方向取向于c轴方向的棒状氮化铝单晶形成。其氮化铝材料生长在其晶体的侧部上的暴露表面相对于{0001}表面倾斜90°。由此，可以制造出具有优异结晶性的氮化铝单晶。

26. 发明授权

US07122490B2 Aluminum nitride materials and members for use in the production of semiconductors 有权
标题翻译：氮化铝材料和用于半导体生产的部件
公开(公告)号：US07122490B2
公开(公告)日：2006-10-17
申请号：US10785774
申请日：2004-02-24
申请人： Yoshimasa Kobayashi , Toru Hayase , Naomi Teratani , Jun Yoshikawa , Naohito Yamada
发明人： Yoshimasa Kobayashi , Toru Hayase , Naomi Teratani , Jun Yoshikawa , Naohito Yamada
IPC分类号： C04B35/581 , C04B35/482
CPC分类号： C01B21/0602 , C01B21/072 , C01P2002/54 , C01P2002/72 , C01P2002/85 , C01P2004/03 , C01P2004/04 , C01P2004/61 , C01P2006/40 , C04B35/581
摘要： A novel aluminum nitride material having a low room temperature volume resistivity is provided. The aluminum nitride material has an aluminum nitride main component and includes at least 0.03 mol % of europium oxide. The aluminum nitride material has an aluminum nitride phase and an europium-aluminum composite oxide phase. An aluminum nitride material also provided having an aluminum nitride main component, wherein a total content of europium oxide and samarium oxide is at least 0.09 mol %. The aluminum nitride material has an aluminum nitride phase and a composite oxide phase containing at least europium and aluminum.
摘要翻译：提供具有低室温体积电阻率的新型氮化铝材料。氮化铝材料具有氮化铝主要成分，并且包含至少0.03mol％的氧化铕。氮化铝材料具有氮化铝相和铕 - 铝复合氧化物相。还提供了具有氮化铝主要成分的氮化铝材料，其中氧化铕和氧化钐的总含量为至少0.09mol％。氮化铝材料具有至少含有铕和铝的氮化铝相和复合氧化物相。

27. 发明申请

US20060006395A1 Method for manufacturing aluminum nitride single crystal 有权
标题翻译：制造氮化铝单晶的方法
公开(公告)号：US20060006395A1
公开(公告)日：2006-01-12
申请号：US11172108
申请日：2005-06-30
申请人： Yoshimasa Kobayashi , Toru Hayase , Naohito Yamada
发明人： Yoshimasa Kobayashi , Toru Hayase , Naohito Yamada
IPC分类号： H01L29/15 , H01L31/0312
CPC分类号： C30B29/403 , C30B23/002
摘要： There is provided a method for manufacturing an aluminum nitride single crystal, the method including the steps of: preparing a raw material composition containing: aluminum oxide and/or an aluminum oxide precursor which is converted into aluminum oxide by heating, and aluminum nitride and/or an aluminum nitride precursor which is converted into aluminum nitride by heating; heating the raw material composition at 1600 to 2400° C. to synthesize aluminum nitride; and causing crystal growth of the aluminum nitride to obtain an aluminum nitride single crystal. The method is capable of obtaining an aluminum nitride single crystal which is sufficiently large for practical use at low cost in a short time and has high productivity and wide usability.
摘要翻译：提供一种制造氮化铝单晶的方法，该方法包括以下步骤：制备含有氧化铝和/或通过加热转化为氧化铝的氧化铝前体的原料组合物，以及氮化铝和/ 或通过加热转化成氮化铝的氮化铝前体; 在1600〜2400℃下加热原料组成，合成氮化铝; 并引起氮化铝的晶体生长，得到氮化铝单晶。该方法能够在短时间内以低成本获得足够大的实际使用的氮化铝单晶，并且具有高生产率和广泛的可用性。

28. 发明授权

US09244443B2 Recovery method for logistics system 有权
标题翻译：物流系统恢复方法
公开(公告)号：US09244443B2
公开(公告)日：2016-01-26
申请号：US13878740
申请日：2011-09-05
申请人： Yoshimasa Kobayashi
发明人： Yoshimasa Kobayashi
IPC分类号： G05B13/00 , G06Q10/06 , G06Q10/08
CPC分类号： G05B13/00 , G06Q10/06 , G06Q10/08
摘要： The object is to maintain the operations of a logistic system. The recovering method of the logistic system includes a plurality of controllers connected with each other via a local network. A recovery method for the logistic system comprises detecting an abnormal state of the plurality of controllers, outputting a switching requesting signal, receiving a control signal, and outputting the control signal. In outputting the switching requesting signal, when an abnormal controller that shows the abnormal state is detected, a switching requesting signal to switch from the abnormal controller to an alternate controller is outputted from the logistic system to the alternate controller. In receiving the control signal, a control signal that controls at least a part of operations of the logistic system instead of the abnormal controller is received from the alternate controller.
摘要翻译：目的是维护后勤系统的运作。物流系统的恢复方法包括通过本地网络彼此连接的多个控制器。用于物流系统的恢复方法包括检测多个控制器的异常状态，输出切换请求信号，接收控制信号并输出控制信号。在输出切换请求信号时，当检测到显示异常状态的异常控制器时，将从异常控制器切换到备用控制器的切换请求信号从物流系统输出到备用控制器。在接收到控制信号时，从备用控制器接收到控制逻辑系统的操作的至少一部分而不是异常控制器的控制信号。

29. 发明申请

US20120186723A1 Ti3SiC2 BASED MATERIAL, ELECTRODE, SPARK PLUG AND MANUFACTURING METHOD THEREOF 有权
标题翻译： Ti3SiC2基材料，电极，火花塞及其制造方法
公开(公告)号：US20120186723A1
公开(公告)日：2012-07-26
申请号：US13358887
申请日：2012-01-26
申请人： Tetsuya HATTORI , Takafumi Kimata , Yoshimasa Kobayashi
发明人： Tetsuya HATTORI , Takafumi Kimata , Yoshimasa Kobayashi
IPC分类号： H01T21/02 , B28B1/00 , B28B11/00 , H01T13/39
CPC分类号： H01T13/39 , C04B35/5615 , C04B35/5618 , C04B35/645 , C04B37/001 , C04B37/021 , C04B2235/3817 , C04B2235/3843 , C04B2235/3891 , C04B2235/402 , C04B2235/404 , C04B2235/428 , C04B2235/48 , C04B2235/658 , C04B2235/661 , C04B2235/77 , C04B2235/80 , C04B2235/9607 , C04B2237/343 , C04B2237/36 , C04B2237/405 , H01T21/02
摘要： The present invention provides a Ti3SiC2 based material that exhibits excellent arc resistance, an electrode, a spark plug, and methods of manufacturing the same. A Ti3SiC2 based material according to the present invention includes Ti3SiC2 as a main phase, the Ti3SiC2 based material having a TiC content of 0.5 mass % or less and an open porosity of 0.5% or less. It may be preferable that 0 to 30 mol % of Si contained in the main phase Ti3SiC2 be substituted with Al. A spark plug according to the present invention includes an electrode formed using the Ti3SiC2 based material.
摘要翻译：本发明提供了具有优异的耐电弧性的Ti 3 SiC 2系材料，电极，火花塞及其制造方法。根据本发明的Ti 3 SiC 2基材料包括Ti 3 SiC 2作为主相，Ti 3 SiC 2基材料的TiC含量为0.5质量％以下，开孔率为0.5％以下。可以优选将主相Ti3SiC2中所含的0〜30摩尔％的Si置换为Al。根据本发明的火花塞包括使用基于Ti 3 SiC 2的材料形成的电极。

30. 发明授权

US08126288B2 Image processing apparatus 有权
标题翻译：图像处理装置
公开(公告)号：US08126288B2
公开(公告)日：2012-02-28
申请号：US12022732
申请日：2008-01-30
申请人： Hisato Maeda , Yoshimasa Kobayashi , Nobutoku Motomura
发明人： Hisato Maeda , Yoshimasa Kobayashi , Nobutoku Motomura
IPC分类号： G06K9/36 , G06K9/00
CPC分类号： G06K9/40 , G06K2209/05 , G06T5/002 , G06T5/10 , G06T5/50 , G06T2207/10072 , G06T2207/20064
摘要： An image processing apparatus includes a storing section which stores data of a digital image, a rotation processing section which generates a plurality of rotated digital images having different rotation angles from the digital image, an image processing section which generates a plurality of image-processed digital images from the rotated digital images, a reverse processing section which generates a plurality of reversed digital images from the image-processed digital images, and a combining section which combines the reversed digital images into one digital image.
摘要翻译：图像处理装置包括存储数字图像数据的存储部分，从数字图像生成具有不同旋转角度的多个旋转数字图像的旋转处理部分，产生多个图像处理数字来自旋转的数字图像的图像，从图像处理的数字图像生成多个反转的数字图像的反向处理部分，以及将反转的数字图像组合成一个数字图像的组合部分。

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