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    • 22. 发明授权
    • Imaging lens and small-size image pickup apparatus using the same
    • 成像透镜和使用其的小尺寸图像拾取装置
    • US07965454B2
    • 2011-06-21
    • US12546459
    • 2009-08-24
    • Hiroaki TanakaMasashi Isono
    • Hiroaki TanakaMasashi Isono
    • G02B9/00G02B27/64
    • G02B13/0045G02B9/60
    • There are provided an imaging lens, which is capable of promoting high definition and miniaturization of a small-size image pickup apparatus, and the small-size image pickup apparatus using the same. A aperture diaphragm S is arranged between a first lens L1 and a second lens L2 so that the first lens L1 is configured to be displaced into the orthogonal direction to the optical axis. Even when an error sensitivity of a lens is large, a stable high resolution can be secured by performing a lens alignment by displacing the first lens L1 into the orthogonal direction to the optical axis at the time of assembling, and thereby a high definition image can be obtained.
    • 提供了能够促进小尺寸图像拾取装置的高清晰度和小型化以及使用其的小尺寸图像拾取装置的成像透镜。 在第一透镜L1和第二透镜L2之间设置孔径光阑S,使得第一透镜L1被配置为向与光轴正交的方向移位。 即使当透镜的误差灵敏度大时,通过在组装时将第一透镜L1移位到与光轴正交的方向上执行透镜对准,可以确保稳定的高分辨率,从而高分辨率图像可以 得到。
    • 25. 发明申请
    • SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCTION THEREOF
    • 半导体器件及其制造方法
    • US20100025725A1
    • 2010-02-04
    • US12514637
    • 2007-11-13
    • Hiroaki Tanaka
    • Hiroaki Tanaka
    • H01L29/739H01L21/331
    • H01L29/7397H01L29/1095H01L29/66348
    • A semiconductor device has a drift region (20) (third semiconductor region) of an n-type (first conductivity type); a body region (50) (second semiconductor region) of a p-type (second conductivity type) provided on the drift region (20); an emitter region (60) (first semiconductor region) of the n-type formed in the top surface of the body region (50) and separated from the drift region (20) by the body region (50); a trench (14) extending from the top surface of the emitter region (60) through the body region (50) into the drift region (20); a trench gate electrode (13) filled in the trench (14); and a semiconductor region (70) (fourth semiconductor region) of the p-type formed in contact with side faces of the trench protruding into the drift region (20). Therefore, the semiconductor device can suppress a surge voltage at turn-off, and can be produced easily.
    • 半导体器件具有n型(第一导电型)的漂移区域(20)(第三半导体区域); 设置在漂移区域(20)上的p型(第二导电型)的体区(50)(第二半导体区域); 所述n型的发射极区域(60)(第一半导体区域)形成在所述主体区域(50)的顶表面中并且通过所述主体区域(50)与所述漂移区域(20)分离。 从所述发射极区域(60)的顶表面延伸通过所述体区(50)延伸到所述漂移区域(20)中的沟槽(14)。 填充在沟槽(14)中的沟槽栅电极(13); 以及形成为与突出到漂移区域(20)中的沟槽的侧面接触的p型半导体区域(第四半导体区域)(第四半导体区域)。 因此,半导体装置能够抑制关断时的浪涌电压,能够容易地制造。