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21. 发明申请

US20160322304A1 SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20160322304A1
公开(公告)日：2016-11-03
申请号：US15001568
申请日：2016-01-20
申请人： Yoon-Hae Kim , Hwa-Sung Rhee , Keun-Hwi Cho
发明人： Yoon-Hae Kim , Hwa-Sung Rhee , Keun-Hwi Cho
IPC分类号： H01L23/535 , H01L27/088
CPC分类号： H01L21/28518 , H01L21/76843 , H01L21/76855 , H01L21/76897 , H01L27/0886
摘要： A semiconductor device includes a gate structure extending in a second direction on a substrate, a source/drain layer disposed on a portion of the substrate adjacent the gate structure in a first direction crossing the second direction, a first conductive contact plug on the gate structure, and a second contact plug structure disposed on the source/drain layer. The second contact plug structure includes a second conductive contact plug and an insulation pattern, and the second conductive contact plug and the insulation pattern are disposed in the second direction and contact each other. The first conductive contact plug and the insulation pattern are adjacent to each other in the first direction. The first and second conductive contact plugs are spaced apart from each other.
摘要翻译：半导体器件包括在衬底上沿第二方向延伸的栅极结构，在与第二方向交叉的第一方向上与栅极结构相邻的衬底的一部分上设置的源极/漏极层，栅极结构上的第一导电接触插塞以及设置在源极/漏极层上的第二接触插塞结构。第二接触插塞结构包括第二导电接触插塞和绝缘图案，并且第二导电接触插塞和绝缘图案设置在第二方向上并且彼此接触。第一导电接触插塞和绝缘图案在第一方向上彼此相邻。第一和第二导电接触插塞彼此间隔开。

22. 发明申请

US20120309189A1 METHODS FOR FABRICATING SEMICONDUCTOR DEVICES 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120309189A1
公开(公告)日：2012-12-06
申请号：US13444175
申请日：2012-04-11
申请人： Sang-Jine Park , Bo-Un Yoon , Jeong-Nam Han , Yoon-Hae Kim , Doo-Sung Yun
发明人： Sang-Jine Park , Bo-Un Yoon , Jeong-Nam Han , Yoon-Hae Kim , Doo-Sung Yun
IPC分类号： H01L21/768
CPC分类号： H01L21/31144 , H01L21/76804 , H01L21/76808 , H01L21/76811 , H01L21/76877
摘要： In a method for fabricating a semiconductor device, a semiconductor device is provided including an interlayer dielectric film and first and second hard mask patterns sequentially stacked thereon. A first trench is provided in the interlayer dielectric film through the second hard mask pattern and the first hard mask pattern. A filler material is provided on the interlayer dielectric film and the first and second hard mask patterns to fill the first trench. First and second hard mask trimming patterns are formed by trimming sidewalls of the first and second hard mask patterns and removing the filler material to expose the first trench. A damascene wire is formed by filling the first trench with a conductive material.
摘要翻译：在制造半导体器件的方法中，提供了半导体器件，其包括层间绝缘膜和顺序堆叠在其上的第一和第二硬掩模图案。第一沟槽通过第二硬掩模图案和第一硬掩模图案设置在层间电介质膜中。在层间电介质膜和第一和第二硬掩模图案上设置填充材料以填充第一沟槽。通过修剪第一和第二硬掩模图案的侧壁并去除填充材料以暴露第一沟槽而形成第一和第二硬掩模修剪图案。通过用导电材料填充第一沟槽来形成镶嵌线。

23. 发明申请

US20120098073A1 Semiconductor Device 有权
标题翻译：半导体器件
公开(公告)号：US20120098073A1
公开(公告)日：2012-04-26
申请号：US12909002
申请日：2010-10-21
申请人： Dong-Hee Yu , Bong-Seok Suh , Yoon-Hae Kim , O Sung Kwon , Oh-Jung Kwon
发明人： Dong-Hee Yu , Bong-Seok Suh , Yoon-Hae Kim , O Sung Kwon , Oh-Jung Kwon
IPC分类号： H01L29/78
CPC分类号： H01L23/535 , H01L21/76802 , H01L21/76813 , H01L23/485 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device is provided. The semiconductor device includes: a substrate; device isolation regions formed in the substrate; an impurity region formed in a region of the substrate between every two adjacent ones of the device isolation regions; a gate electrode formed on the substrate; first and second interlayer insulating films sequentially formed on the substrate; a metal interlayer insulating film formed on the second interlayer insulating film and comprising metal wiring layers; a first contact plug electrically connecting each of the metal wiring layers and the impurity region; and a second contact plug electrically connecting each of the metal wiring layers and the gate electrode, wherein the first contact plug is formed in the first and second interlayer insulating films, and the second contact plug is formed in the second interlayer insulating film.
摘要翻译：提供半导体器件。半导体器件包括：衬底; 在衬底中形成的器件隔离区; 在每隔两个相邻的器件隔离区域之间形成在衬底的区域中的杂质区; 形成在所述基板上的栅电极; 顺序形成在基板上的第一和第二层间绝缘膜; 形成在所述第二层间绝缘膜上并且包括金属布线层的金属层间绝缘膜; 电连接每个金属布线层和杂质区的第一接触插塞; 以及第二接触插塞，其电连接每个所述金属布线层和所述栅电极，其中所述第一接触插塞形成在所述第一和第二层间绝缘膜中，并且所述第二接触插塞形成在所述第二层间绝缘膜中。

24. 发明申请

US20080054329A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080054329A1
公开(公告)日：2008-03-06
申请号：US11760092
申请日：2007-06-08
申请人： Yoon-Hae Kim , Myoung-Hwan Oh , Myung-Soo Yeo , Hea-Yean Park
发明人： Yoon-Hae Kim , Myoung-Hwan Oh , Myung-Soo Yeo , Hea-Yean Park
IPC分类号： H01L29/94
CPC分类号： H01L28/60 , H01L21/76816
摘要： A semiconductor device and methods of fabricating the same, wherein insulation layers are interposed to sequentially dispose the semiconductor device on a semiconductor substrate. The semiconductor device includes a first conductive plate, a second conductive plate, a third conductive plate, and a fourth conductive plate. At least two of the first second, third and fourth conductive plates are electrically connected and constitute at least two capacitors.
摘要翻译：一种半导体器件及其制造方法，其中插入绝缘层以将半导体器件依次配置在半导体衬底上。半导体器件包括第一导电板，第二导电板，第三导电板和第四导电板。第一第二，第三和第四导电板中的至少两个电连接并构成至少两个电容器。

25. 发明申请

US20070284363A1 Temperature control apparatus of heating jacket 审中-公开
标题翻译：加热套管温控装置
公开(公告)号：US20070284363A1
公开(公告)日：2007-12-13
申请号：US11636987
申请日：2006-12-12
申请人： Yoon-Hae Kim
发明人： Yoon-Hae Kim
IPC分类号： B23K13/08
CPC分类号： F24H1/142 , G05D23/19
摘要： A temperature control apparatus of a gas pipe heating jacket prevents a heat transfer through a pipe having unreactive residual gas and maintains the temperature of the gas in the event that a first hot wire in the heating jacket is damaged or otherwise inoperable through the use of a second hot wire. By maintaining the temperature of the gas flowing through the pipe, crystallization due to heat differences is avoided thereby preventing pipe blockage and subsequent process errors. The temperature control apparatus includes a controller, a power supply controller, first and second hot wires, a relay, a temperature sensor and a display. The first and second hot wires heat the gas pipe with AC power supplied from power supply controller. The relay selectively supplies the AC power to the first or second hot wire in response to the relay switching signal from the controller. The temperature sensor senses a heating temperature of the gas pipe. A display individually indicates drive states of the first and second hot wires in response to the control signal from the controller.
摘要翻译：气体管加热套管的温度控制装置防止通过具有不活动残留气体的管道的热传递，并且在加热套管中的第一热丝被损坏或以其他方式不可操作的情况下维持气体的温度，通过使用第二热丝。通过保持流过管道的气体的温度，避免由于热差导致的结晶，从而防止管道堵塞和随后的工艺误差。温度控制装置包括控制器，电源控制器，第一和第二热丝，继电器，温度传感器和显示器。第一和第二热丝通过从电源控制器提供的AC电力加热气体管道。响应于来自控制器的继电器切换信号，继电器选择性地将AC电力提供给第一或第二热线。温度传感器检测气体管道的加热温度。响应于来自控制器的控制信号，显示器分别指示第一和第二热丝的驱动状态。

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