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21. 发明申请

US20090155986A1 METHOD FOR MANUFACTURING GALLIUM NITRIDE SINGLE CRYSTALLINE SUBSTRATE USING SELF-SPLIT 有权
标题翻译：使用自分离法制造氮化镓单晶衬底的方法
公开(公告)号：US20090155986A1
公开(公告)日：2009-06-18
申请号：US12332198
申请日：2008-12-10
申请人： Ho-Jun Lee , Doo-Soo Kim , Dong-Kun Lee , Yong-Jin Kim
发明人： Ho-Jun Lee , Doo-Soo Kim , Dong-Kun Lee , Yong-Jin Kim
IPC分类号： H01L21/203
CPC分类号： C30B29/406 , C30B25/18
摘要： The present invention relates to a method for manufacturing a gallium nitride single crystalline substrate, including (a) growing a gallium nitride film on a flat base substrate made of a material having a smaller coefficient of thermal expansion than gallium nitride and cooling the gallium nitride film to bend convex upwards the base substrate and the gallium nitride film and create cracks in the gallium nitride film; (b) growing a gallium nitride single crystalline layer on the crack-created gallium nitride film located on the convex upward base substrate; and (c) cooling a resultant product having the grown gallium nitride single crystalline layer to make the convex upward resultant product flat or bend convex downwards the convex upward resultant product and at the same time to self-split the base substrate and the gallium nitride single crystalline layer from each other at the crack-created gallium nitride film interposed therebetween.
摘要翻译：本发明涉及一种用于制造氮化镓单晶衬底的方法，包括（a）在具有比氮化镓更小的热膨胀系数的材料制成的平坦基底衬底上生长氮化镓膜并冷却氮化镓膜使基底和氮化镓膜向上弯曲并在氮化镓膜中产生裂纹; （b）在位于凸起的上方的基底基板上的裂纹产生的氮化镓膜上生长氮化镓单晶层; 和（c）冷却具有生长的氮化镓单晶层的所得产物，以使凸起的上升产物平坦或向上凸起向上凸起的产生产物，同时使基底衬底和氮化镓单层自分裂在其间形成的裂纹产生的氮化镓膜彼此相互结合。

22. 发明申请

US20050163383A1 Driver's eye image detecting device and method in drowsy driver warning system 审中-公开
标题翻译：驾驶员眼睛图像检测装置和方法在昏昏欲睡的司机警告系统中
公开(公告)号：US20050163383A1
公开(公告)日：2005-07-28
申请号：US10929258
申请日：2004-08-30
申请人： Hee-Jung Kim , Ho-Jun Lee , Kyong-Ha Park
发明人： Hee-Jung Kim , Ho-Jun Lee , Kyong-Ha Park
IPC分类号： G08B21/06 , G06K9/00 , G06K9/62
CPC分类号： G06K9/00597
摘要： A device for detecting a driver's eye image, which includes a camera for photographing a driver who is sitting in a car and outputting a photographed facial image of the driver, an eye template storing section for storing an eye template in the form of a standard human eye, and a control section for detecting an eye image from the driver's facial image inputted from the camera using the stored eye template. The device can rapidly obtain a driver's eye image for a drowsy driver warning system.
摘要翻译：一种用于检测驾驶员眼睛图像的装置，其包括摄像机，用于拍摄坐在汽车中的驾驶员并输出驾驶员的拍摄面部图像;眼模板存储部分，用于以标准人的形式存储眼模板眼睛和控制部分，用于使用存储的眼睛模板从驾驶员从相机输入的面部图像中检测眼睛图像。该设备可以快速获得驾驶员的眼睛图像，用于昏昏欲睡的驾驶员警告系统。

23. 发明授权

US08711310B2 Liquid crystal display 有权
标题翻译：液晶显示器
公开(公告)号：US08711310B2
公开(公告)日：2014-04-29
申请号：US13150715
申请日：2011-06-01
申请人： Ho-Jun Lee , Sang Wook Lee , Sung-Jun Kim
发明人： Ho-Jun Lee , Sang Wook Lee , Sung-Jun Kim
IPC分类号： G02F1/1343
CPC分类号： G02F1/1341 , G02F1/1343 , G02F2202/16
摘要： A liquid crystal display includes a first substrate and a second substrate which face each other and each include a display area and a peripheral area, a liquid crystal layer in the display areas and between the first substrate and the second substrate, and a conductive sealant combining the first substrate and the second substrate. The first substrate includes a common electrode in the display and peripheral areas of the first substrate. The second substrate includes a first and signal lines in the peripheral area of the second substrate, a first insulating layer on the first signal line and the second signal line, and a conductor on the first insulating layer in the peripheral area and connected to the first signal line through a contact hole. The common electrode includes a cutout corresponding to the conductor, and the cutout is at a corner of the display areas.
摘要翻译：液晶显示器包括第一基板和第二基板，所述第一基板和第二基板彼此面对并且各自包括显示区域和周边区域，显示区域中的液晶层以及第一基板和第二基板之间的导电密封剂组合第一基板和第二基板。第一基板包括显示器中的公共电极和第一基板的外围区域。第二基板包括在第二基板的外围区域中的第一和第二信号线，第一信号线和第二信号线上的第一绝缘层，以及周边区域中的第一绝缘层上的导体，并连接到第一基板信号线通过接触孔。公共电极包括对应于导体的切口，并且切口位于显示区域的拐角处。

24. 发明申请

US20130178050A1 METHOD FOR MANUFACTURING GALLIUM NITRIDE WAFER 有权
标题翻译：用于制造氮化铝膜的方法
公开(公告)号：US20130178050A1
公开(公告)日：2013-07-11
申请号：US13714240
申请日：2012-12-13
申请人： Yong-Jin Kim , Dong-Kun Lee , Doo-Soo Kim , Ho-Jun Lee , Kye-Jin Lee
发明人： Yong-Jin Kim , Dong-Kun Lee , Doo-Soo Kim , Ho-Jun Lee , Kye-Jin Lee
IPC分类号： H01L21/02
CPC分类号： H01L21/302 , C30B25/186 , C30B29/406 , H01L21/0237 , H01L21/02458 , H01L21/02488 , H01L21/02494 , H01L21/02502 , H01L21/0254 , H01L21/02658 , H01L21/02664
摘要： A method for manufacturing a gallium nitride (GaN) wafer is provided. In the method for manufacturing the GaN wafer according to an embodiment, an etch stop layer is formed on a substrate, and a first GaN layer is formed on the etch stop layer. A portion of the first GaN layer is etched with a silane gas, and a second GaN layer is formed on the etched first GaN layer. A third GaN layer is formed on the second GaN layer.
摘要翻译：提供了一种制造氮化镓（GaN）晶片的方法。在根据实施例的制造GaN晶片的方法中，在衬底上形成蚀刻停止层，并且在蚀刻停止层上形成第一GaN层。用硅烷气蚀刻第一GaN层的一部分，在蚀刻的第一GaN层上形成第二GaN层。在第二GaN层上形成第三GaN层。

25. 发明授权

US08470413B2 Retardation compensators of negative C-type for liquid crystal display 有权
标题翻译：用于液晶显示的负C型延迟补偿器
公开(公告)号：US08470413B2
公开(公告)日：2013-06-25
申请号：US12087739
申请日：2007-01-11
申请人： Hee-Jung Kim , Dong-Ryul Kim , Ho-Jun Lee , Sang-Uk Ryu , Hyo-Sun Lee , Boong-Goon Jeong , Dae-Woo Nam , Ju-Eun Cha
发明人： Hee-Jung Kim , Dong-Ryul Kim , Ho-Jun Lee , Sang-Uk Ryu , Hyo-Sun Lee , Boong-Goon Jeong , Dae-Woo Nam , Ju-Eun Cha
IPC分类号： C09K19/00
CPC分类号： G02F1/1333 , G02B1/04 , G02B5/3083 , G02F1/133634 , Y10T428/10 , Y10T428/1036 , Y10T428/105 , Y10T428/31786 , C08L81/00
摘要： Disclosed is a negative C-type retardation compensator for a liquid crystal display. The negative C-type retardation compensator for the liquid crystal display includes polyarylate having a thio group or a sulfur oxide group in a polymer main chain thereof. Accordingly, the retardation compensator has an absolute value of negative retardation that is larger in a thickness direction than a retardation compensator which includes polyarylate having no thio group or sulfur oxide group in a polymer main chain thereof even though the retardation compensator having the thio group or sulfur oxide group and the retardation compensator having no thio group or sulfur oxide group are the same as each other in thickness. Thereby, the negative C-type retardation compensator for liquid crystal displays is capable of being desirably applied to the liquid crystal displays.
摘要翻译：公开了用于液晶显示器的负C型延迟补偿器。用于液晶显示器的负C型延迟补偿器包括其聚合物主链中具有硫基或硫氧化物基团的多芳基化合物。因此，延迟补偿器具有在包含聚合物主链中不含硫基或硫氧化物基团的多芳基化物的延迟补偿器的厚度方向上的负相位差绝对值即使具有硫基的相位差补偿器或硫氧化物基团和没有硫基或硫氧化物基团的延迟补偿器的厚度彼此相同。由此，液晶显示器的负C型延迟补偿器能够适用于液晶显示器。

26. 发明授权

US08354289B2 Method for manufacturing gallium nitride wafer 有权
公开(公告)号：US08354289B2
公开(公告)日：2013-01-15
申请号：US13019146
申请日：2011-02-01
申请人： Yong-Jin Kim , Dong-Kun Lee , Doo-Soo Kim , Ho-Jun Lee , Kye-Jin Lee
发明人： Yong-Jin Kim , Dong-Kun Lee , Doo-Soo Kim , Ho-Jun Lee , Kye-Jin Lee
IPC分类号： H01L33/20 , H01L33/22
CPC分类号： H01L21/302 , C30B25/186 , C30B29/406 , H01L21/0237 , H01L21/02458 , H01L21/02488 , H01L21/02494 , H01L21/02502 , H01L21/0254 , H01L21/02658 , H01L21/02664
摘要： A method for manufacturing a gallium nitride (GaN) wafer is provided. In the method for manufacturing the GaN wafer according to an embodiment, an etch stop layer is formed on a substrate, and a first GaN layer is formed on the etch stop layer. A portion of the first GaN layer is etched with a silane gas, and a second GaN layer is formed on the etched first GaN layer. A third GaN layer is formed on the second GaN layer.

27. 发明授权

US08198649B2 Compound semiconductor substrate grown on metal layer, method for manufacturing the same, and compound semiconductor device using the same 有权
标题翻译：在金属层上生长的化合物半导体衬底，其制造方法以及使用其的化合物半导体器件
公开(公告)号：US08198649B2
公开(公告)日：2012-06-12
申请号：US11982716
申请日：2007-11-02
申请人： Yong-Jin Kim , Doo-Soo Kim , Ho-Jun Lee , Dong-Kun Lee
发明人： Yong-Jin Kim , Doo-Soo Kim , Ho-Jun Lee , Dong-Kun Lee
IPC分类号： H01L33/20
CPC分类号： H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/02639 , H01L21/02642 , H01L21/02647 , H01L33/20 , H01L33/38
摘要： The present invention relates to a compound semiconductor substrate and a method for manufacturing the same. The present invention provides the manufacturing method which coats spherical balls on a substrate, forms a metal layer between the spherical balls, removes the spherical balls to form openings, and grows a compound semiconductor layer from the openings. According to the present invention, the manufacturing method can be simplified and grow a high quality compound semiconductor layer rapidly, simply and inexpensively, as compared with a conventional ELO (Epitaxial Lateral Overgrowth) method or a method for forming a compound semiconductor layer on a metal layer. And, the metal layer serves as one electrode of a light emitting device and a light reflecting film to provide a light emitting device having reduced power consumption and high light emitting efficiency.
摘要翻译：化合物半导体基板及其制造方法技术领域本发明涉及化合物半导体基板及其制造方法。本发明提供一种制造方法，其在基板上涂布球形球，在球形球之间形成金属层，去除球形球以形成开口，并从开口生长化合物半导体层。根据本发明，与传统的ELO（外延横向生长）方法或在金属上形成化合物半导体层的方法相比，可以简化和简单且廉价地生产高质量的化合物半导体层层。并且，金属层用作发光器件和光反射膜的一个电极，以提供具有降低的功率消耗和高发光效率的发光器件。

28. 发明授权

US08158496B2 Method for preparing compound semiconductor substrate 有权
标题翻译：化合物半导体衬底的制备方法
公开(公告)号：US08158496B2
公开(公告)日：2012-04-17
申请号：US12878225
申请日：2010-09-09
申请人： Ho-Jun Lee , Yong-Jin Kim , Dong-Kun Lee , Doo-Soo Kim , Ji-Hoon Kim
发明人： Ho-Jun Lee , Yong-Jin Kim , Dong-Kun Lee , Doo-Soo Kim , Ji-Hoon Kim
IPC分类号： H01L21/28
CPC分类号： H01L21/0254 , H01L21/02378 , H01L21/02381 , H01L21/0242 , H01L21/02639 , H01L21/02642 , H01L21/02664
摘要： Provided is a method for preparing a compound semiconductor substrate. The method includes coating a plurality of spherical balls on a substrate, growing a compound semiconductor epitaxial layer on the substrate coated with the spherical balls while allowing voids to be formed under the spherical balls, and cooling the substrate on which the compound semiconductor epitaxial layer is grown so that the substrate and the compound semiconductor epitaxial layer are self-separated along the voids. The spherical ball treatment can reduce dislocation generations. In addition, because the substrate and the compound semiconductor epitaxial layer are separated through the self-separation, there is no need for laser lift-off process.
摘要翻译：提供了一种制备化合物半导体衬底的方法。该方法包括在基板上涂覆多个球形球，在涂覆有球形球的基材上生长化合物半导体外延层，同时允许在球形球下方形成空隙，并且冷却其上化合物半导体外延层为生长，使得衬底和化合物半导体外延层沿着空隙自我分离。球形球处理可以减少错位几代。此外，由于基板和化合物半导体外延层通过自分离分离，因此不需要激光剥离处理。

29. 发明申请

US20110143525A1 NITRIDE SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：氮化物半导体基板及其制造方法
公开(公告)号：US20110143525A1
公开(公告)日：2011-06-16
申请号：US13031425
申请日：2011-02-21
申请人： Doo-Soo Kim , Ho-Jun Lee , Yong-Jin Kim , Dong-Kun Lee
发明人： Doo-Soo Kim , Ho-Jun Lee , Yong-Jin Kim , Dong-Kun Lee
IPC分类号： H01L21/365
CPC分类号： H01L21/02658 , H01L21/0237 , H01L21/02381 , H01L21/02428 , H01L21/0254
摘要： The present invention relates to a nitride semiconductor substrate such as gallium nitride substrate and a method for manufacturing the same. The present invention forms a plurality of trenches on a lower surface of a base substrate that are configured to absorb or reduce stresses applied larger when growing a nitride semiconductor film on the base substrate from a central portion of the base substrate towards a peripheral portion. That is, the present invention forms the trenches on the lower surface of the base substrate such that pitches get smaller or widths or depths get larger from the central portion of the base substrate towards the peripheral portion.
摘要翻译：氮化镓半导体衬底及其制造方法技术领域本发明涉及氮化镓衬底等氮化物半导体衬底及其制造方法。本发明在基底基板的下表面上形成多个沟槽，该多个沟槽被配置为当从基底基板的中心部朝向周边部分生长氮化物半导体膜时吸收或减小施加更大的应力。也就是说，本发明在基底基板的下表面上形成沟槽，使得间距变得较小，或者宽度或深度从基底基板的中心部朝向周边部分变大。

30. 发明授权

US07947985B2 Thin film transistor array substrate and manufacturing method thereof 有权
标题翻译：薄膜晶体管阵列基板及其制造方法
公开(公告)号：US07947985B2
公开(公告)日：2011-05-24
申请号：US12435773
申请日：2009-05-05
申请人： Dae-Cheol Kim , Woong-Kwon Kim , Sang-Youn Han , In-Woo Kim , Ho-Jun Lee , Byeong-Jae Ahn
发明人： Dae-Cheol Kim , Woong-Kwon Kim , Sang-Youn Han , In-Woo Kim , Ho-Jun Lee , Byeong-Jae Ahn
IPC分类号： H01L27/14
CPC分类号： G02F1/136213 , H01L27/124 , H01L27/1255 , H01L27/1288
摘要： A thin film transistor array substrate and its manufacturing method are disclosed. A thin film transistor (TFT) includes a gate electrode formed on a substrate, and source and drain electrodes formed on the gate electrode and separated from each other. A common line made of the same material as the gate electrode is formed on the substrate. A storage capacitor includes a storage electrode connected with a storage electrode line and a pixel electrode formed on the storage electrode. The storage electrode and the pixel electrode are formed by patterning a transparent conductive film, and accordingly, light can be transmitted through the region where the storage capacitor is formed to thus increase an aperture ratio.
摘要翻译：公开了薄膜晶体管阵列基板及其制造方法。薄膜晶体管（TFT）包括形成在基板上的栅极电极和形成在栅电极上并彼此分离的源极和漏极。在基板上形成由与栅电极相同的材料构成的公共线。存储电容器包括与存储电极线连接的存储电极和形成在存储电极上的像素电极。存储电极和像素电极通过图案化透明导电膜而形成，因此可以通过形成存储电容器的区域透射光，从而增加开口率。

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