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21. 发明授权

US08077370B1 Scanning optical apparatus 有权
标题翻译：扫描光学仪器
公开(公告)号：US08077370B1
公开(公告)日：2011-12-13
申请号：US13072717
申请日：2011-03-27
申请人： Hiroyuki Ominato , Hitoshi Fujino , Yoshifumi Nakamura , Hiroki Yukawa
发明人： Hiroyuki Ominato , Hitoshi Fujino , Yoshifumi Nakamura , Hiroki Yukawa
IPC分类号： G02B26/08
CPC分类号： G02B26/125
摘要： In a scanning optical apparatus including a single lens configured to convert a beam deflected by a polygon mirror into a spot-like image on a scanned surface, an angle β2 [deg] formed in a main scanning plane between the first optical axis and the second optical axis of the opposite lens surfaces of the lens satisfies the condition of −0.6
摘要翻译：在包括配置成将由多面镜偏转的光束转换为被扫描表面上的斑点状图像的单个透镜的扫描光学装置中，在第一光轴和第二光轴之间的主扫描平面中形成的角度＆透镜的相对透镜表面的第二光轴满足条件-0.6 <＆bgr; 2＆nlE; -0.1，并且满足条件-0.5 <＆bgr1 <0和-0.1

22. 发明授权

US07847198B2 Wiring board and method for manufacturing the same, and semiconductor device 有权
标题翻译：接线板及其制造方法以及半导体器件
公开(公告)号：US07847198B2
公开(公告)日：2010-12-07
申请号：US11742159
申请日：2007-04-30
申请人： Nozomi Shimoishizaka , Yoshifumi Nakamura
发明人： Nozomi Shimoishizaka , Yoshifumi Nakamura
IPC分类号： H05K1/11 , H01R12/04
CPC分类号： H05K3/4007 , H01L21/4853 , H01L23/49816 , H01L24/11 , H01L24/12 , H01L24/16 , H01L24/81 , H01L2224/05001 , H01L2224/05022 , H01L2224/05155 , H01L2224/05572 , H01L2224/05644 , H01L2224/11462 , H01L2224/13099 , H01L2224/13109 , H01L2224/13147 , H01L2224/16225 , H01L2224/16227 , H01L2224/81192 , H01L2224/81203 , H01L2224/81205 , H01L2224/81801 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/351 , H05K1/111 , H05K3/243 , H05K3/244 , H05K3/328 , H05K3/386 , H05K2201/0367 , H05K2201/10674 , H05K2203/0278 , H05K2203/0285 , Y10T29/49155 , H01L2924/00 , H01L2924/00014
摘要： A wiring board includes an insulating base; an adhesive layer formed on the surface of the insulating base; a conductor wiring formed on the surface of the adhesive layer; and a bump formed crossing the longitudinal direction of the conductor wiring over regions on the adhesive layer on both sides of the conductor wiring, wherein the back face at a part of the conductor wiring where the bump is formed, and the back faces and parts of the side faces of the bump formed above the regions of the adhesive layer on both sides of the conductor wiring, are embedded in the surface of the adhesive layer so as to be adhered to the adhesive layer. Even when the wiring width of the conductor wiring is decreased, the conductor wiring can be adhered to the wiring board firmly.
摘要翻译：布线板包括绝缘基底; 形成在所述绝缘基材的表面上的粘合剂层; 形成在所述粘合剂层的表面上的导体布线; 以及在导体布线的两侧的粘合剂层上的区域上与导体布线的纵向交叉的凸块，其中形成有凸块的导体布线的一部分的背面以及背面和形成在导体布线两侧的粘合剂层的区域之上的凸起的侧面嵌入粘合剂层的表面，从而粘附到粘合剂层上。即使导体布线的布线宽度减小，导体布线也可以牢固地粘附在布线板上。

23. 发明授权

US06914331B2 Semiconductor device having an inductor formed on a region of an insulating film 失效
标题翻译：具有形成在绝缘膜的区域上的电感器的半导体器件
公开(公告)号：US06914331B2
公开(公告)日：2005-07-05
申请号：US10442139
申请日：2003-05-21
申请人： Nozomi Shimoishizaka , Kazuyuki Kaino , Yoshifumi Nakamura , Keiji Miki , Kazumi Watase , Ryuichi Sahara
发明人： Nozomi Shimoishizaka , Kazuyuki Kaino , Yoshifumi Nakamura , Keiji Miki , Kazumi Watase , Ryuichi Sahara
IPC分类号： H01L21/768 , H01L21/822 , H01L23/12 , H01L23/31 , H01L23/48 , H01L23/522 , H01L27/04 , H01L23/498
CPC分类号： H01L23/3114 , H01L23/5227 , H01L2224/0401 , H01L2224/05555 , H01L2924/3011 , H01L2924/00014
摘要： A semiconductor device has a semiconductor chip, a first insulating film and an inductor. The semiconductor chip includes an integrated circuit formed on the main surface of the chip and a plurality of pad electrodes formed on the main surface of the chip and electrically connected to the integrated circuit. The first insulating film of an insulating resin material is formed on the main surface of the semiconductor chip, covers the integrated circuit, and includes a plurality of contact holes provided on the respective pad electrodes. The inductor is formed on the inductor formation region of the first insulating film, and both terminals of the inductor are connected to the pad electrodes through the contact holes, respectively. The inductor formation region of the first insulating film is formed thicker than a portion of the first insulating film around the contact hole.
摘要翻译：半导体器件具有半导体芯片，第一绝缘膜和电感器。半导体芯片包括形成在芯片的主表面上的集成电路和形成在芯片的主表面上并电连接到集成电路的多个焊盘电极。绝缘树脂材料的第一绝缘膜形成在半导体芯片的主表面上，覆盖集成电路，并且包括设置在各个焊盘电极上的多个接触孔。电感器形成在第一绝缘膜的电感器形成区域上，并且电感器的两个端子分别通过接触孔连接到焊盘电极。第一绝缘膜的电感器形成区域形成为比接触孔周围的第一绝缘膜的一部分厚。

24. 发明申请

US20050006749A1 Semiconductor device and method for manufacturing the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050006749A1
公开(公告)日：2005-01-13
申请号：US10916445
申请日：2004-08-12
申请人： Nozomi Shimoishizaka , Ryuichi Sahara , Yoshifumi Nakamura , Takahiro Kumakawa , Shinji Murakami , Yutaka Harada
发明人： Nozomi Shimoishizaka , Ryuichi Sahara , Yoshifumi Nakamura , Takahiro Kumakawa , Shinji Murakami , Yutaka Harada
IPC分类号： H01L23/12 , H01L23/31 , H01L23/485 , H01L21/4763 , H01L23/02 , H01L23/48 , H01L29/40
CPC分类号： H01L23/3114 , H01L23/3171 , H01L24/10 , H01L24/13 , H01L2224/05001 , H01L2224/05022 , H01L2224/05024 , H01L2224/05571 , H01L2224/13 , H01L2224/13099 , H01L2224/1403 , H01L2224/16 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/09701 , H01L2924/12042 , H01L2924/14 , H01L2924/15787 , H01L2924/351 , H01L2924/00 , H01L2224/05541 , H01L2224/05005
摘要： A low elasticity layer (20) having an opening in an electrode arranging area where element electrodes are disposed is provided on a main surface of a semiconductor substrate (10). On the low elasticity layer (20), lands (32) serving as external electrodes are disposed, and pads (30) on the element electrodes, the lands (32) and metal wires (31) for connecting them are integrally formed as a metal wiring pattern (33). A solder resist film (50) having an opening for exposing a part of each land (32) is formed, and a metal ball (40) is provided on the land (32) in the opening. The low elasticity layer (20) absorbs thermal stress and the like caused in heating or cooling the semiconductor device, so as to prevent disconnection of the metal wires (31).
摘要翻译：在半导体衬底（10）的主表面上设置有在电极配置区域中设置有元件电极的开口的低弹性层（20）。在低弹性层（20）上设置用作外部电极的焊盘（32），并且元件电极上的焊盘（30），用于连接的焊盘（32）和金属丝（31）一体地形成为金属接线图案（33）。形成具有用于暴露每个焊盘（32）的一部分的开口的阻焊膜（50），并且金属球（40）设置在开口中的焊盘（32）上。低弹性层（20）吸收在加热或冷却半导体器件时引起的热应力等，以防止金属线（31）的断开。

25. 发明授权

US06812573B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06812573B2
公开(公告)日：2004-11-02
申请号：US09886971
申请日：2001-06-25
申请人： Nozomi Shimoishizaka , Ryuichi Sahara , Yoshifumi Nakamura , Takahiro Kumakawa , Shinji Murakami , Yutaka Harada
发明人： Nozomi Shimoishizaka , Ryuichi Sahara , Yoshifumi Nakamura , Takahiro Kumakawa , Shinji Murakami , Yutaka Harada
IPC分类号： H01L2348
CPC分类号： H01L23/3114 , H01L23/3171 , H01L24/10 , H01L24/13 , H01L2224/05001 , H01L2224/05022 , H01L2224/05024 , H01L2224/05571 , H01L2224/13 , H01L2224/13099 , H01L2224/1403 , H01L2224/16 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/09701 , H01L2924/12042 , H01L2924/14 , H01L2924/15787 , H01L2924/351 , H01L2924/00 , H01L2224/05541 , H01L2224/05005
摘要： A low elasticity layer (20) having an opening in an electrode arranging area where element electrodes are disposed is provided on a main surface of a semiconductor substrate (10). On the low elasticity layer (20), lands (32) serving as external electrodes are disposed, and pads (30) on the element electrodes, the lands (32) and metal wires (31) for connecting them are integrally formed as a metal wiring pattern (33). A solder resist film (50) having an opening for exposing a part of each land (32) is formed, and a metal ball (40) is provided on the land (32) in the opening. The low elasticity layer (20) absorbs thermal stress and the like caused in heating or cooling the semiconductor device, so as to prevent disconnection of the metal wires (31).
摘要翻译：在半导体衬底（10）的主表面上设置有在电极配置区域中设置有元件电极的开口的低弹性层（20）。在低弹性层（20）上设置用作外部电极的焊盘（32），并且元件电极上的焊盘（30），用于连接的焊盘（32）和金属丝（31）一体地形成为金属布线图案（33）。形成具有用于暴露每个焊盘（32）的一部分的开口的阻焊膜（50），并且金属球（40）设置在开口中的焊盘（32）上。低弹性层（20）吸收在加热或冷却半导体器件时引起的热应力等，以防止金属线（31）的断开。

26. 发明授权

US06313532B1 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06313532B1
公开(公告)日：2001-11-06
申请号：US09381381
申请日：1999-09-20
申请人： Nozomi Shimoishizaka , Ryuichi Sahara , Yoshifumi Nakamura , Takahiro Kumakawa , Shinji Murakami , Yutaka Harada
发明人： Nozomi Shimoishizaka , Ryuichi Sahara , Yoshifumi Nakamura , Takahiro Kumakawa , Shinji Murakami , Yutaka Harada
IPC分类号： H01L2348
CPC分类号： H01L23/3114 , H01L23/3171 , H01L24/10 , H01L24/13 , H01L2224/05001 , H01L2224/05022 , H01L2224/05024 , H01L2224/05571 , H01L2224/13 , H01L2224/13099 , H01L2224/1403 , H01L2224/16 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/09701 , H01L2924/12042 , H01L2924/14 , H01L2924/15787 , H01L2924/351 , H01L2924/00 , H01L2224/05541 , H01L2224/05005
摘要： A low elasticity layer (20) having an opening in an electrode arranging area where element electrodes are disposed is provided on a main surface of a semiconductor substrate (10). On the low elasticity layer (20), lands (32) serving as external electrodes are disposed, and pads (30) on the element electrodes, the lands (32) and metal wires (31) for connecting them are integrally formed as a metal wiring pattern (33). A solder resist film (50) having an opening for exposing a part of each land (32) is formed, and a metal ball (40) is provided on the land (32) in the opening. The low elasticity layer (20) absorbs thermal stress and the like caused in heating or cooling the semiconductor device, so as to prevent disconnection of the metal wires (31).
摘要翻译：在半导体衬底（10）的主表面上设置有在电极配置区域中设置有元件电极的开口的低弹性层（20）。在低弹性层（20）上设置用作外部电极的焊盘（32），并且元件电极上的焊盘（30），用于连接的焊盘（32）和金属丝（31）一体地形成为金属布线图案（33）。形成具有用于暴露每个焊盘（32）的一部分的开口的阻焊膜（50），并且金属球（40）设置在开口中的焊盘（32）上。低弹性层（20）吸收在加热或冷却半导体器件时引起的热应力等，以防止金属线（31）的断开。

27. 发明授权

US5370759A Method for producing multilayered ceramic substrate 失效
标题翻译：多层陶瓷基板的制造方法
公开(公告)号：US5370759A
公开(公告)日：1994-12-06
申请号：US60981
申请日：1993-05-14
申请人： Yasuhiko Hakotani , Seiichi Nakatani , Tsuneharu Katada , Satoru Yuhaku , Kazuhiro Miura , Yoshifumi Nakamura
发明人： Yasuhiko Hakotani , Seiichi Nakatani , Tsuneharu Katada , Satoru Yuhaku , Kazuhiro Miura , Yoshifumi Nakamura
IPC分类号： H01L21/48 , H01L23/498 , B32B31/16 , B32B18/00
CPC分类号： H01L23/49822 , H01L21/4857 , H01L23/49883 , H01L2924/0002 , H01L2924/09701 , H01L2924/3011
摘要： A method for producing a multilayered ceramic substrate including the steps of:forming at least two green sheets each including a low-temperature firing glass-ceramic substrate material,forming an electrode pattern and a via hole electrode on and through each green sheet with a conductor paste,laminating said green sheets to obtain a laminate,forming a pair of green sheets which include an inorganic material which is not sintered at a firing temperature of the green sheet of the low-temperature firing glass-ceramic substrate material or lower, and then forming a hole through the inorganic material green sheet,laminating the inorganic material green sheet on the outermost green sheet of the laminate to obtain a resultant laminate in which the hole is positioned over a portion of the electrode pattern of an outermost low-temperature firing glass-ceramic green sheets of the laminate,firing said resultant laminate at the firing temperature, andremoving the unsintered inorganic material. The substrate does not shrink in its plane direction and surface smoothness, electrical resistance and solderability of the top layer wiring pattern are improved.
摘要翻译：一种多层陶瓷基板的制造方法，其特征在于，包括以下步骤：在导体上形成至少两个生坯片，每个生片包括低温焙烧玻璃陶瓷基板材料，在每个生片上形成电极图案和通孔电极，糊状，层压所述生片以获得层压体，形成一对生片，其包括在低温焙烧玻璃 - 陶瓷基片材料的生片的烧成温度以下未烧结的无机材料，然后通过无机材料生片形成孔，将无机材料生片层叠在层压体的最外层生片上，得到所得到的层叠体，其中孔位于最外层低温烧成玻璃的电极图案的一部分上 - 陶瓷生片，在烧成温度下焙烧所得到的层压体，除去未烧结的无机物 ial 基板在其平面方向上不收缩，并且提高了顶层布线图案的表面平滑度，电阻和可焊性。

28. 外观设计

USD332355S Folding chair 失效
公开(公告)号：USD332355S
公开(公告)日：1993-01-12
申请号：US482351
申请日：1990-02-21
申请人： Yoshimasa Maruya , Yoshifumi Nakamura , Junzo Yoshimura
设计人： Yoshimasa Maruya , Yoshifumi Nakamura , Junzo Yoshimura

29. 发明授权

US08954233B2 Vehicle body drifting suppression device 有权
标题翻译：车身漂移抑制装置
公开(公告)号：US08954233B2
公开(公告)日：2015-02-10
申请号：US12465453
申请日：2009-05-13
申请人： Yoshifumi Nakamura , Norio Yamazaki , Shigenori Takimoto , Yoshimichi Kawamoto
发明人： Yoshifumi Nakamura , Norio Yamazaki , Shigenori Takimoto , Yoshimichi Kawamoto
IPC分类号： B62D6/04 , B62D6/08 , B62D6/06 , B62D5/04
CPC分类号： B62D6/04 , B62D5/0463 , B62D6/06 , B62D6/08
摘要： A vehicle body drifting suppression device including a steering torque detection unit which detects a steering torque of a vehicle, wherein a vehicle body drifting suppression is performed according to a vehicle body drifting suppression control-amount, and the vehicle body drifting suppression control-amount is adjusted according to a temporal sustention status of the steering torque.
摘要翻译：一种车体漂移抑制装置，其包括检测车辆的转向扭矩的转向转矩检测单元，其中，根据车体漂移抑制控制量进行车身偏移抑制，并且车体漂移抑制控制量为根据转向转矩的时间维持状态进行调整。

30. 发明授权

US08953236B2 Scanning optical apparatus 有权
标题翻译：扫描光学仪器
公开(公告)号：US08953236B2
公开(公告)日：2015-02-10
申请号：US14099454
申请日：2013-12-06
申请人： Hidetaka Hoshino , Yoshifumi Nakamura , Hitoshi Fujino
发明人： Hidetaka Hoshino , Yoshifumi Nakamura , Hitoshi Fujino
IPC分类号： G02B26/08 , G02B26/12 , G02B7/00
CPC分类号： G02B26/124 , G02B7/008 , G02B27/4211 , G02B27/4227
摘要： In a scanning optical apparatus, an illumination optical system has a diffractive power φdM and a refractive power φnM in a main scanning direction, and a ratio φnM/φdM in the main scanning direction for a focal length fi in a range of 10-22 mm satisfies: g2(fi)≦φnM/φdM≦g1(fi), where A(Z)=(1.897×107)Z2+6744Z+0.5255, B(Z)=(2.964×107)Z2+5645Z+0.6494, C(Z)=(3.270×107)Z2+3589Z+0.5250, D(Z)=(5.016×107)Z2+4571Z+0.8139, g1(fi)=fi{D(Z)−B(Z)}/12−5D(Z)/6+11B(Z)/6, g2(fi)=fi{C(Z)−D(Z)}/12−5C(Z)/6+11A(Z)/6.
摘要翻译：在扫描光学装置中，照明光学系统在主扫描方向上具有衍射光焦度和折射光焦度，并且在主扫描方向上具有用于焦距f 1的比率＆lt; nM /＆phgr; dM 其中A（Z）=（1.897×107）Z2 + 6744Z + 0.5255，B（Z）为10-22mm的范围，满足：g2（fi）＆nlE;＆phgr; nM /＆phgr; dM＆ =（2.964×107）Z2 + 5645Z + 0.6494，C（Z）=（3.270×107）Z2 + 3589Z + 0.5250，D（Z）=（5.016×107）Z2 + 4571Z + 0.8139，g1（fi）= fi {D（Z）-B（Z）} / 12-5D（Z）/ 6 + 11B（Z）/ 6，g2（fi）= fi {C（Z）-D（Z）} / 12-5C Z）/ 6 + 11A（Z）/ 6。

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