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21. 发明授权

US5041447A Oxetanocin-related compounds and pharmaceutical compositions containing them 失效
标题翻译：含有氧杂环鸟胺的化合物和含有它们的药物组合物
公开(公告)号：US5041447A
公开(公告)日：1991-08-20
申请号：US325230
申请日：1989-03-17
申请人： Seiichi Saito , Shigeru Hasegawa , Katsutoshi Takahashi , Nobuyoshi Shimada , Jun-ichi Seki , Hiroo Hoshino , Yukihiro Nishiyama , Kenichi Matsubara , Takemitsu Nagahata
发明人： Seiichi Saito , Shigeru Hasegawa , Katsutoshi Takahashi , Nobuyoshi Shimada , Jun-ichi Seki , Hiroo Hoshino , Yukihiro Nishiyama , Kenichi Matsubara , Takemitsu Nagahata
IPC分类号： C07D305/06 , C07D305/08 , C07D305/10 , C07H19/02
CPC分类号： C07H19/02 , C07D305/06 , C07D305/08 , C07D305/10
摘要： This invention relates to oxetanocin-related compounds represented by the following formula (I): ##STR1## [in formula (I), R.sub.1, Y and B have the following meanings: (a) R.sub.1 represents --CH.sub.2 OH or --CH.sub.2 OCO-(alkyl),(b) Y represents ##STR2## provided that R.sub.2 is --H, --OH or --CH.sub.2 OH and R.sub.3 is --H, --OH, halogen atom, --CH.sub.2 OH, lower alkyl group, --CH.sub.2 -N.sub.3, --CH.sub.2 -F, --N.sub.3, --COOH, --NH.sub.2, --CH.sub.2 OSO.sub.3 H or --CH.sub.2 OCO-(lower alkyl), and(c) B represents a residue of purine base,(d) provided that R.sub.1 and R.sub.3 cannot simultaneously represents --CH.sub.2 OH]and their salts which have activities such as an antiviral activity and the like and are expectedly useful as a pharmaceutical and the like.

22. 外观设计

USD318665S Combined tape player and tuner 失效
公开(公告)号：USD318665S
公开(公告)日：1991-07-30
申请号：US387634
申请日：1989-07-31
申请人： Masafumi Ito , Shigeru Hasegawa , Minoru Sube , Hiroyuki Watanabe , Keiji Tsunoda , Manami Fujino , Yukio Iikura
设计人： Masafumi Ito , Shigeru Hasegawa , Minoru Sube , Hiroyuki Watanabe , Keiji Tsunoda , Manami Fujino , Yukio Iikura

23. 外观设计

USD315905S Digital audio disc player 失效
公开(公告)号：USD315905S
公开(公告)日：1991-04-02
申请号：US154625
申请日：1988-02-10
申请人： Masafumi Ito , Shigeru Hasegawa , Haruki Takita , Minoru Sube
设计人： Masafumi Ito , Shigeru Hasegawa , Haruki Takita , Minoru Sube

24. 发明授权

US06967357B1 Voltage-driven power semiconductor device 失效
标题翻译：电压驱动功率半导体器件
公开(公告)号：US06967357B1
公开(公告)日：2005-11-22
申请号：US09684904
申请日：2000-10-10
申请人： Hironobu Kon , Yoshinori Iwano , Mitsuhiko Kitagawa , Shigeru Hasegawa , Michiaki Hiyoshi
发明人： Hironobu Kon , Yoshinori Iwano , Mitsuhiko Kitagawa , Shigeru Hasegawa , Michiaki Hiyoshi
IPC分类号： H01L29/78 , H01L23/48 , H01L27/04 , H01L29/739 , H03K17/16 , H01L29/74 , H01L31/111
CPC分类号： H01L24/72 , H01L29/7397 , H01L2224/45124 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01074 , H01L2924/12035 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H03K17/168 , H01L2924/00 , H01L2224/48
摘要： A voltage-driven power semiconductor device includes a voltage-driven IEGT chip, a collector electrode plate, an emitter electrode plate, and an inductance material. The collector electrode plate is connected to the collector of the IEGT chip, and press-contacts the IEGT chip from its collector side. The emitter electrode plate press-contacts the IEGT chip from its emitter side. The inductance material has an inductance component and connects the emitter of the IEGT chip and the emitter electrode plate. In the voltage-driven power semiconductor device having this arrangement, an induced electromotive force is generated in the inductance material arranged between the emitter of the IEGT chip and the emitter electrode plate. This induced electromotive force can suppress a steep current change (di/dt) upon an OFF operation, and can further suppress a steep voltage change (dv/dt) caused by the current change (di/dt).
摘要翻译：电压驱动功率半导体器件包括电压驱动的IEGT芯片，集电极板，发射极电极板和电感材料。集电极板与IEGT芯片的集电极连接，并从集电极侧压接IEGT芯片。发射极电极板从发射极侧压接IEGT芯片。电感材料具有电感元件并连接IEGT芯片的发射极和发射极电极板。在具有这种结构的电压驱动功率半导体器件中，在配置在IEGT芯片的发射极和发射极电极板之间的电感材料中产生感应电动势。该感应电动势可以抑制在OFF操作时的陡峭电流变化（di / dt），并且可以进一步抑制由电流变化（di / dt）引起的陡峭的电压变化（dv / dt）。

25. 发明申请

US20050178234A1 Accelerator 有权
标题翻译：加速器
公开(公告)号：US20050178234A1
公开(公告)日：2005-08-18
申请号：US11052881
申请日：2005-02-09
申请人： Takehiro Saito , Kimio Uchida , Haruhiko Suzuki , Masahiro Makino , Shigeru Hasegawa , Hiroshi Takeyama
发明人： Takehiro Saito , Kimio Uchida , Haruhiko Suzuki , Masahiro Makino , Shigeru Hasegawa , Hiroshi Takeyama
IPC分类号： B60K26/02 , F02D9/08 , F02D11/02 , F02D11/10 , G01B7/30 , G05G1/30 , G05G1/38 , G05G1/14
CPC分类号： G05G1/30 , G05G1/38 , Y10T74/20528 , Y10T74/20534 , Y10T74/2054
摘要： An accelerator capable of detecting a turning angle of an accelerator pedal with high accuracy includes a bearing part, an urging part, an accelerator pedal, a stopper, and a turning angle sensor. The accelerator pedal has a turning shaft supported by the bearing part and is turned forward when a depressing force is applied thereto and is turned reversely when the urging force of the urging part is applied thereto. The stopper abuts against the accelerator pedal to limit the reverse turn of the accelerator pedal and substantially simultaneously guides the accelerator pedal in a direction equivalent to that which the urging force is applied. The turning angle sensor detects the turning angle of the accelerator pedal.
摘要翻译：能够高精度地检测加速踏板的转向角度的加速器包括轴承部，推压部，加速踏板，止动件和转向角传感器。加速器踏板具有由轴承部支承的转动轴，当向其施加按压力时向前转动，并且当施力部分的作用力向其施加时，该踏板反转。止挡件抵靠加速器踏板以限制加速器踏板的反向转动，并且基本上同时沿加载踏板等同于施加作用力的方向引导加速器踏板。转向角传感器检测加速踏板的转动角度。

26. 发明授权

US06777743B2 Insulating gate type semiconductor device 有权
标题翻译：绝缘栅型半导体器件
公开(公告)号：US06777743B2
公开(公告)日：2004-08-17
申请号：US10061152
申请日：2002-02-04
申请人： Shigeru Hasegawa
发明人： Shigeru Hasegawa
IPC分类号： H01L2976
CPC分类号： H01L29/66348 , H01L29/7397
摘要： An insulating gate type semiconductor device has a plurality of trench gate electrodes provided substantially in parallel. In this semiconductor device, among the trench gate electrodes, a thinning-out trench gate electrode excluding a channel-forming trench gate electrode is insulated from a gate wire and is connected to an emitter electrode or to a predetermined electric potential generating device for generating a negative electric potential with respect to an emitter potential. With this construction, a gate capacitance is decreased without drawbacks such as a decline of manufacturing yield and an increase in gate wire resistance, there are decreased oscillations of waveforms of voltage and current when in switching in the case of an element having a large area and operating the elements in parallel.
摘要翻译：绝缘栅型半导体器件具有大致平行设置的多个沟槽栅电极。在该半导体装置中，在沟槽栅电极中，除沟道形成用沟槽栅电极之外的稀疏沟槽栅电极与栅极导线绝缘，并与发射电极或预定电位生成装置连接，相对于发射极电位的负电位。利用这种结构，栅极电容降低而没有诸如制造成品率的下降和栅极线电阻增加的缺点，当在具有大面积的元件的情况下切换时，电压和电流的波形的振荡减小，并且并行运行元素。

27. 发明授权

US6147368A Voltage-driven power semiconductor device 失效
标题翻译：电压驱动功率半导体器件
公开(公告)号：US6147368A
公开(公告)日：2000-11-14
申请号：US115238
申请日：1998-07-14
申请人： Hironobu Kon , Yoshinoro Iwano , Mitsuhiko Kitagawa , Shigeru Hasegawa , Michiaki Hiyoshi
发明人： Hironobu Kon , Yoshinoro Iwano , Mitsuhiko Kitagawa , Shigeru Hasegawa , Michiaki Hiyoshi
IPC分类号： H01L29/78 , H01L23/48 , H01L27/04 , H01L29/739 , H03K17/16 , H01L29/74 , H01L31/111
CPC分类号： H01L24/72 , H01L29/7397 , H03K17/168 , H01L2224/45124 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01074 , H01L2924/12035 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107
摘要： A voltage-driven power semiconductor device includes a voltage-driven IEGT chip, a collector electrode plate, an emitter electrode plate, and an inductance material. The collector electrode plate is connected to the collector of the IEGT chip, and press-contacts the IEGT chip from its collector side. The emitter electrode plate press-contacts the IEGT chip from its emitter side. The inductance material has an inductance component and connects the emitter of the IEGT chip and the emitter electrode plate. In the voltage-driven power semiconductor device having this arrangement, an induced electromotive force is generated in the inductance material arranged between the emitter of the IEGT chip and the emitter electrode plate. This induced electromotive force can suppress a steep current change (di/dt) upon an OFF operation, and can further suppress a steep voltage change (dv/dt) caused by the current change (di/dt).
摘要翻译：电压驱动功率半导体器件包括电压驱动的IEGT芯片，集电极板，发射极电极板和电感材料。集电极板与IEGT芯片的集电极连接，并从集电极侧压接IEGT芯片。发射极电极板从发射极侧压接IEGT芯片。电感材料具有电感元件并连接IEGT芯片的发射极和发射极电极板。在具有这种结构的电压驱动功率半导体器件中，在配置在IEGT芯片的发射极和发射极电极板之间的电感材料中产生感应电动势。该感应电动势可以抑制在OFF操作时的陡峭电流变化（di / dt），并且可以进一步抑制由电流变化（di / dt）引起的陡峭的电压变化（dv / dt）。

28. 外观设计

USD419971S Data recorder 失效
公开(公告)号：USD419971S
公开(公告)日：2000-02-01
申请号：US92407
申请日：1998-08-18
申请人： Masafumi Ito , Shigeru Hasegawa
设计人： Masafumi Ito , Shigeru Hasegawa

29. 外观设计

USD408408S Digital audio disc player 失效
公开(公告)号：USD408408S
公开(公告)日：1999-04-20
申请号：US81814
申请日：1997-10-08
申请人： Masafumi Ito , Shigeru Hasegawa , Keiji Tsunoda
设计人： Masafumi Ito , Shigeru Hasegawa , Keiji Tsunoda

30. 外观设计

USD401917S Disk drive 失效
公开(公告)号：USD401917S
公开(公告)日：1998-12-01
申请号：US79477
申请日：1997-11-13
申请人： Masafumi Ito , Shigeru Hasegawa , Yoshinori Fuse
设计人： Masafumi Ito , Shigeru Hasegawa , Yoshinori Fuse

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