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    • 23. 发明授权
    • Digital recording device, digital recording method, program, and storage medium
    • 数字记录装置,数字记录方法,程序和存储介质
    • US07873426B2
    • 2011-01-18
    • US11553732
    • 2006-10-27
    • Eiichi Yamada
    • Eiichi Yamada
    • G06F17/00
    • H03M1/188
    • A digital recording device includes a microphone configured to convert collected sound into an analog audio signal; a first analog to digital converter configured to convert the signal converted by the microphone into a digital audio signal; a first memory configured to store the digital audio signal of the first analog to digital converter; an attenuator configured to attenuate the analog audio signal with a predetermined attenuation factor; a second analog to digital converter configured to convert the attenuated signal into a digital audio signal; a second memory configured to store the digital audio signal of the second analog to digital converter; an audio signal generating unit configured to extract the digital audio signal in one of the first memory and the second memory for a required time range according to an amplitude maximum value of the signal, and generate a new digital audio signal; and an audio signal memory for storing the generated digital audio signal.
    • 数字记录装置包括被配置为将收集的声音转换为模拟音频信号的麦克风; 第一模数转换器,被配置为将由所述麦克风转换的信号转换为数字音频信号; 第一存储器,被配置为存储第一模数转换器的数字音频信号; 衰减器,被配置为以预定衰减因子衰减所述模拟音频信号; 第二模数转换器,被配置为将衰减的信号转换成数字音频信号; 第二存储器,被配置为存储所述第二模数转换器的数字音频信号; 音频信号生成单元,被配置为根据所述信号的振幅最大值,在所述第一存储器和所述第二存储器之一中提取数字音频信号达到所需时间范围,并生成新的数字音频信号; 以及用于存储所生成的数字音频信号的音频信号存储器。
    • 24. 发明申请
    • SEMICONDUCTOR OPTICAL MODULATOR
    • 半导体光学调制器
    • US20090034904A1
    • 2009-02-05
    • US11817312
    • 2006-03-08
    • Ken TsuzukiNobuhiro KikuchiEiichi Yamada
    • Ken TsuzukiNobuhiro KikuchiEiichi Yamada
    • G02B6/12H01L31/0264
    • G02F1/025G02F2201/07G02F2202/102
    • There is provided a semiconductor optical modulator capable of performing a stable operation and having an excellent voltage-current characteristic to an electric field while exhibiting the characteristic of a semiconductor optical modulator with an n-i-n structure. The semiconductor optical modulator includes a waveguide structure that is formed by sequentially growing an n-type InP clad layer (11), a semiconductor core layer (13) having an electro-optic effect, a p-InAlAs layer (15), and an n-type InP clad layer (16). An electron affinity of the p-InAlAs layer (15) is smaller than an electron affinity of the n-type InP clad layer (16). In the waveguide structure having such a configuration, a non-dope InP clad layer (12) and a non-dope InP clad layer (14) may be respectively provided between the n-type InP clad layer (11) and the semiconductor core layer (13), and between the semiconductor core layer (13) and the p-InAlAs layer (15).
    • 提供了一种能够执行稳定操作并且具有优异的电场电压特性的半导体光调制器,同时具有n-i-n结构的半导体光调制器的特性。 半导体光调制器包括通过依次生长n型InP包覆层(11),具有电光效应的半导体芯层(13),p-InAlAs层(15)和 n型InP覆层(16)。 p-InAlAs层(15)的电子亲和力小于n型InP包覆层(16)的电子亲和力。 在具有这种结构的波导结构中,非掺杂InP覆盖层(12)和非掺杂InP覆盖层(14)可以分别设置在n型InP覆盖层(11)和半导体芯层 (13),以及半导体芯层(13)和p-InAlAs层(15)之间。