专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明申请

US20070247906A1 Fin type memory cell 审中-公开
标题翻译：鳍式存储单元
公开(公告)号：US20070247906A1
公开(公告)日：2007-10-25
申请号：US11723335
申请日：2007-03-19
申请人： Hiroshi Watanabe , Yoshifumi Nishi , Atsuhiro Kinoshita
发明人： Hiroshi Watanabe , Yoshifumi Nishi , Atsuhiro Kinoshita
IPC分类号： G11C16/04
CPC分类号： G11C16/0483 , H01L27/115 , H01L27/11519 , H01L29/785
摘要： A Fin-type memory cell according to an example of the present invention includes a fin-shaped active area, a floating gate along a side surface of the fin-shaped active area, and two control gate electrodes arranged in a longitudinal direction of the fin-shaped active area, and sandwiching the floating gate.
摘要翻译：根据本发明的实施例的鳍型存储单元包括鳍状有源区域，沿着鳍状有源区域的侧表面的浮置栅极和沿翅片的纵向布置的两个控制栅极电极形状的活动区域，并夹着浮动门。

22. 发明授权

US09007823B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09007823B2
公开(公告)日：2015-04-14
申请号：US13480853
申请日：2012-05-25
申请人： Takahiro Kurita , Yoshifumi Nishi , Kosuke Tatsumura , Atsuhiro Kinoshita
发明人： Takahiro Kurita , Yoshifumi Nishi , Kosuke Tatsumura , Atsuhiro Kinoshita
IPC分类号： G11C11/34 , H01L21/28 , G11C7/02 , G11C11/403 , H01L29/423 , H01L29/51 , H01L27/108
CPC分类号： H01L21/28291 , G11C7/02 , G11C11/403 , H01L21/28282 , H01L27/108 , H01L27/10873 , H01L29/4234 , H01L29/516
摘要： A semiconductor device according to an embodiment includes: a first transistor including a gate connected to a first interconnection, a first source, and a first drain, one of the first source and the first drain being connected to a second interconnection; and a second transistor including a gate structure, a second source, and a second drain, one of the second source and second drain being connected to a third interconnection and the other of the second source and second drain being connected to a fourth interconnection. The gate structure includes a gate insulation film, a gate electrode, and a threshold-modulating film provided between the gate insulation film and the gate electrode to modulate a threshold voltage, the other of the first source and first drain of the first transistor is connected to the gate electrode.
摘要翻译：根据实施例的半导体器件包括：第一晶体管，包括连接到第一互连的栅极，第一源极和第一漏极，第一源极和第一漏极中的一个连接到第二互连; 以及第二晶体管，其包括栅极结构，第二源极和第二漏极，所述第二源极和第二漏极中的一个连接到第三互连，并且所述第二源极和第二漏极中的另一个连接到第四互连。栅极结构包括栅极绝缘膜，栅极电极和设置在栅极绝缘膜和栅电极之间以调节阈值电压的阈值调制膜，第一晶体管的第一源极和第一漏极中的另一个被连接到栅电极。

23. 发明申请

US20130228736A1 MEMORY DEVICE 有权
标题翻译：内存设备
公开(公告)号：US20130228736A1
公开(公告)日：2013-09-05
申请号：US13599504
申请日：2012-08-30
申请人： Daisuke MATSUSHITA , Shosuke Fujii , Yoshifumi Nishi , Akira Takashima , Takayuki Ishikawa , Hidenori Miyagawa , Takashi Haimoto , Yusuke Arayashiki , Hideki Inokuma
发明人： Daisuke MATSUSHITA , Shosuke Fujii , Yoshifumi Nishi , Akira Takashima , Takayuki Ishikawa , Hidenori Miyagawa , Takashi Haimoto , Yusuke Arayashiki , Hideki Inokuma
IPC分类号： H01L45/00
CPC分类号： H01L45/1253 , H01L27/2481 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/146 , H01L45/148
摘要： According to one embodiment, a memory device includes a first electrode, a second electrode, and a variable resistance film. The variable resistance film is connected between the first electrode and the second electrode. The first electrode includes a metal contained in a matrix made of a conductive material. A cohesive energy of the metal is lower than a cohesive energy of the conductive material. A concentration of the metal at a central portion of the first electrode in a width direction thereof is higher than concentrations of the metal in two end portions of the first electrode in the width direction.
摘要翻译：根据一个实施例，存储器件包括第一电极，第二电极和可变电阻膜。可变电阻膜连接在第一电极和第二电极之间。第一电极包括由导电材料制成的基体中所含的金属。金属的内聚能低于导电材料的内聚能。第一电极的宽度方向的中央部的金属浓度高于第一电极的宽度方向的两端部的金属的浓度。

24. 发明授权

US08450208B2 Semiconductor device manufacturing method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US08450208B2
公开(公告)日：2013-05-28
申请号：US13081629
申请日：2011-04-07
申请人： Yoshifumi Nishi , Atsuhiro Kinoshita , Hirotaka Nishino , Masamichi Suzuki
发明人： Yoshifumi Nishi , Atsuhiro Kinoshita , Hirotaka Nishino , Masamichi Suzuki
IPC分类号： H01L21/283
CPC分类号： H01L21/28518 , H01L29/1608 , H01L29/41708 , H01L29/456 , H01L29/6606 , H01L29/66068 , H01L29/6609 , H01L29/66272 , H01L29/665 , H01L29/6659 , H01L29/66712 , H01L29/732 , H01L29/7833 , H01L29/861
摘要： In a semiconductor device manufacturing method according to an exemplary embodiment, a sulfur-containing film containing sulfur is deposited on an n-type semiconductor, a first metal film containing a first metal is deposited on the sulfur-containing film, a heat treatment is performed to form a metal semiconductor compound film by reacting the n-type semiconductor and the sulfur-containing film, and to introduce sulfur to an interface between the n-type semiconductor and the metal semiconductor compound film being formed.
摘要翻译：在根据示例性实施例的半导体器件制造方法中，在n型半导体上沉积含硫的含硫膜，在含硫膜上沉积含有第一金属的第一金属膜，进行热处理通过使n型半导体和含硫膜反应形成金属半导体化合物膜，并将硫引入到正在形成的n型半导体与金属半导体化合物膜之间的界面上。

25. 发明申请

US20120155020A1 APPARATUS AND SYSTEM FOR IMPROVED THERMAL RADIATION FOR A MOBILE COMPUTING DEVICE AND CASE 有权
标题翻译：用于移动计算设备和案例的改进的热辐射的装置和系统
公开(公告)号：US20120155020A1
公开(公告)日：2012-06-21
申请号：US12970859
申请日：2010-12-16
申请人： Yoshifumi Nishi
发明人： Yoshifumi Nishi
IPC分类号： H05K7/00
CPC分类号： G06F1/203
摘要： Embodiments of an apparatus and system are described for a thermally radiating mobile computing device and case. An apparatus may comprise, for example, a thermally radiating case for a mobile computing device having a first portion arranged to receive the mobile computing device, a thermally conductive coupling arranged to removably couple the case to one or more internal heat generating components of the mobile computing device, and a second portion thermally coupled to the first portion and the thermally conductive coupling, the second portion comprising one or more thermally conductive materials arranged to radiate thermal energy away from the one or more heat generating components. Other embodiments are described and claimed.
摘要翻译：对于热辐射移动计算设备和情况描述了设备和系统的实施例。设备可以包括例如用于移动计算设备的散热壳体，其具有布置成接收移动计算设备的第一部分，布置成将壳体可移除地耦合到移动设备的一个或多个内部发热部件的导热联接器计算装置，以及热耦合到第一部分和导热联接件的第二部分，第二部分包括一个或多个导热材料，其布置成将热能辐射离开一个或多个发热部件。描述和要求保护其他实施例。

26. 发明授权

US07642604B2 Semiconductor device and fabrication method of same 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US07642604B2
公开(公告)日：2010-01-05
申请号：US12036703
申请日：2008-02-25
申请人： Yoshifumi Nishi , Takashi Yamauchi , Yoshinori Tsuchiya , Junji Koga
发明人： Yoshifumi Nishi , Takashi Yamauchi , Yoshinori Tsuchiya , Junji Koga
IPC分类号： H01L23/48
CPC分类号： H01L29/47 , H01L21/28518 , H01L21/76814 , H01L21/823814 , H01L21/823835 , H01L29/475
摘要： A semiconductor device having an electrode with reduced electrical contact resistance even where either electrons or holes are majority carriers is disclosed. This device has an n-type diffusion layer and a p-type diffusion layer in a top surface of a semiconductor substrate. The device also has first and second metal wires patterned to overlie the n-type and p-type diffusion layers, respectively, with a dielectric layer interposed therebetween, a first contact electrode for electrical connection between the n-type diffusion layer and the first metal wire, and a second contact electrode for connection between the p-type diffusion layer and the second metal wire. The first contact electrode's portion in contact with the n-type diffusion layer and the second contact electrode's portion contacted with the p-type diffusion layer are each formed of a first conductor that contains a metal and a second conductor containing a rare earth metal.
摘要翻译：公开了一种半导体器件，其具有即使电子或空穴为多数载流子的具有降低的电接触电阻的电极。该器件在半导体衬底的顶表面中具有n型扩散层和p型扩散层。该装置还具有图案化的第一和第二金属线分别覆盖在n型和p型扩散层之间，介于其间的介电层，用于在n型扩散层和第一金属之间电连接的第一接触电极电线和用于在p型扩散层和第二金属线之间连接的第二接触电极。与n型扩散层接触的第一接触电极部分和与p型扩散层接触的第二接触电极部分分别由包含金属的第一导体和含有稀土金属的第二导体形成。

27. 发明申请

US20090134388A1 SEMICONDUCTOR DEVICE AND FABRICATION METHOD OF SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090134388A1
公开(公告)日：2009-05-28
申请号：US12203409
申请日：2008-09-03
申请人： Takashi YAMAUCHI , Yoshifumi Nishi , Yoshinori Tsuchiya , Junji Koga , Koichi Kato
发明人： Takashi YAMAUCHI , Yoshifumi Nishi , Yoshinori Tsuchiya , Junji Koga , Koichi Kato
IPC分类号： H01L29/08 , H01L21/06
CPC分类号： H01L21/26513 , H01L21/26506 , H01L21/823814 , H01L29/665 , H01L29/7833
摘要： A semiconductor device having a metal insulator semiconductor field effect transistor (MISFET) with interface resistance-reduced source/drain electrodes is disclosed. This device includes a p-type MISFET formed on a semiconductor substrate. The p-MISFET has a channel region in the substrate, a gate insulating film on the channel region, a gate electrode on the gate insulating film, and a pair of laterally spaced-apart source and drain electrodes on both sides of the channel region. These source/drain electrodes are each formed of a nickel (Ni)-containing silicide layer. The p-MISFET further includes an interface layer which is formed on the substrate side of an interface between the substrate and each source/drain electrode. This interface layer contains magnesium (Mg), calcium (Ca) or barium (Ba) therein. A fabrication method of the semiconductor device is also disclosed.
摘要翻译：公开了一种具有金属绝缘体半导体场效应晶体管（MISFET）的半导体器件，具有接口电阻降低的源/漏电极。该器件包括形成在半导体衬底上的p型MISFET。 p-MISFET在衬底中具有沟道区，沟道区上的栅极绝缘膜，栅极绝缘膜上的栅电极，以及沟道区两侧的一对侧向间隔开的源极和漏极。这些源极/漏极各自由含镍（Ni）的硅化物层形成。 p-MISFET还包括界面层，该界面层形成在基板和每个源极/漏极之间的界面的基板侧上。该界面层中含有镁（Mg），钙（Ca）或钡（Ba）。还公开了半导体器件的制造方法。

28. 发明授权

US07117826B2 Pilot oil ignition gas engine and method of operating pilot oil ignition gas engine 有权
标题翻译：先导油点火燃气发动机和操作先导油点火燃气发动机的方法
公开(公告)号：US07117826B2
公开(公告)日：2006-10-10
申请号：US11348189
申请日：2006-02-06
申请人： Satoru Goto , Yoshifumi Nishi
发明人： Satoru Goto , Yoshifumi Nishi
IPC分类号： F02B3/00
CPC分类号： F02M43/00 , F02D19/061 , F02D19/10 , F02D41/0027 , F02D41/042 , Y02T10/36
摘要： The gas engine of the present invention has a pilot oil fuel valve, a pilot oil pump, and first and second pipes connected to a pilot oil main pipe, for each of a plurality of combustion chambers. An operating pilot oil tank and an ignition stimulant-added pilot oil tank are connected via a switching valve to a third pipe, connected to an end of the pilot oil main pipe. Before operating stops, the pilot oil is discharged by opening an exhaust valve, and thereafter, the switching valve is switched and pilot oil which the ignition stimulant has been added to is supplied into the pipe. Consequently, the pilot oil downstream from the main pipe is replaced with the pilot oil which the ignition stimulant has been added to. Therefore, at the time of the next activation, pilot oil which the ignition stimulant has been added to is sprayed from the fuel valve, and, as a result, misfire at the time of activation is reduced, and a highly reliable engine is obtained.
摘要翻译：本发明的燃气发动机具有用于多个燃烧室中的每一个的先导油燃料阀，先导油泵和连接到先导油主管的第一和第二管。操作先导油箱和点火助燃剂先导油箱通过切换阀连接到连接到先导油主管的一端的第三管。在操作停止之前，通过打开排气阀来排出先导油，然后切换切换阀，并将点火促进剂的先导油供给到管中。因此，主管下游的先导油被添加了点燃兴奋剂的先导油代替。因此，在下一次激活时，从燃料阀喷射点火刺激剂的先导油被喷射，结果是激活时失火，获得高可靠性的发动机。

29. 发明授权

US07066164B2 Engine, engine exhaust temperature controlling apparatus, and controlling method 有权
标题翻译：发动机，发动机排气温度控制装置和控制方法
公开(公告)号：US07066164B2
公开(公告)日：2006-06-27
申请号：US10415047
申请日：2002-08-29
申请人： Yoshiharu Ono , Satoru Goto , Yoshifumi Nishi , Sadao Nakayama
发明人： Yoshiharu Ono , Satoru Goto , Yoshifumi Nishi , Sadao Nakayama
IPC分类号： F02D41/14
CPC分类号： F02D41/0085 , F02D19/024 , F02D35/025 , F02D41/0245 , F02D41/1446 , F02D41/40 , F02D2200/1015 , Y02T10/26 , Y02T10/32 , Y02T10/44
摘要： The present invention has been realized in order to keep the cylinder exhaust temperature of a gas engine within a predetermined range, and thereby prevent the generation of misfire and knocking. In the present invention, in S1, when the number of rotations of the engine is greater than a predetermined number, in S2, the exhaust temperatures of the cylinders are sampled at predetermined intervals, in S3, an average of the exhaust temperatures is calculated, in S4, the load factor at that point is determined, in S5, the average exhaust temperature Tave is compared with the exhaust temperature T(n) of each cylinder, and it is determined whether the deviation ΔTn is greater or smaller than the set deviation Tlimit for that load factor. When the deviation ΔTn is smaller, the exhaust temperature is within the set deviation and there is no need to adjust the fuel spray period, and therefore the sequence returns to S2. When the deviation ΔTn is greater, in S6, it is determined whether to increase or reduce the opening period of the electronic fuel spray valve. When increasing the opening period, the sequence shifts to S7, and when reducing the opening period, the sequence shifts to S8. Then, in S9, if the engine exceeds the predetermined number of rotations, the processes of S2 to S6 are repeated; in S9, if the engine is below the predetermined number of rotations, the control operation ceases.
摘要翻译：为了将燃气发动机的气缸排气温度保持在预定范围内，本发明已经实现，从而防止产生失火和爆震。在本发明中，在本发明中，在S 1中，当发动机的转数大于规定数时，在S 2中，以规定的间隔对气缸的排气温度进行取样，在S 3中，排气温度的平均值在S 4中，计算出在该点的负载系数，在S 5中，将平均排气温度T a ave与排气温度T（N n）进行比较，，并且确定偏差DeltaT 是否大于或小于该负载系数的设定偏差T _{限制。当偏差DeltaT 较小时，排气温度在设定偏差之内，不需要调整燃料喷雾周期，因此顺序返回到S 2。当偏差DeltaT 较大时，在S6中，确定是否增加或减少电子燃料喷射阀的打开周期。当增加打开周期时，顺序转移到S 7，并且当减少打开周期时，顺序转移到S 8。然后，在S 9中，如果发动机超过预定转数，则重复S 2〜S 6的处理; 在S 9中，如果发动机低于预定转数，则控制操作停止。}

30. 发明授权

US08723152B2 Variable resistance memory 有权
标题翻译：可变电阻记忆
公开(公告)号：US08723152B2
公开(公告)日：2014-05-13
申请号：US13425687
申请日：2012-03-21
申请人： Yoshifumi Nishi , Hidenori Miyagawa , Daisuke Matsushita , Jun Fujiki , Takeshi Imamura
发明人： Yoshifumi Nishi , Hidenori Miyagawa , Daisuke Matsushita , Jun Fujiki , Takeshi Imamura
IPC分类号： H01L47/00
CPC分类号： H01L45/085 , H01L27/2472 , H01L45/1233 , H01L45/1266 , H01L45/148 , H01L45/149
摘要： A variable resistance memory according to an embodiment includes: a first wiring; a second wiring intersecting with the first wiring; a first electrode provided in an intersection region between the first wiring and the second wiring, the first electrode being connected to the first wiring; a second electrode connected to the second wiring, the second electrode facing to the first electrode; a variable resistance layer provided between the first electrode and the second electrode; and one of a first insulating layer and a first semiconductor layer formed at side portions of the second electrode. The one of the first insulating layer and the first semiconductor layer, and the second electrode form voids at the side portions of the second electrode.
摘要翻译：根据实施例的可变电阻存储器包括：第一布线; 与第一布线相交的第二布线; 设置在所述第一布线和所述第二布线之间的交叉区域中的第一电极，所述第一电极连接到所述第一布线; 连接到第二布线的第二电极，第二电极面对第一电极; 设置在所述第一电极和所述第二电极之间的可变电阻层; 以及形成在第二电极的侧部的第一绝缘层和第一半导体层之一。第一绝缘层和第一半导体层中的一个，第二电极形状在第二电极的侧部空隙。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式