会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 24. 发明申请
    • POWER MOSFET WITH INTEGRATED GATE RESISTOR AND DIODE-CONNECTED MOSFET
    • 具有集成栅极电阻和二极管连接MOSFET的功率MOSFET
    • US20130009253A1
    • 2013-01-10
    • US13540862
    • 2012-07-03
    • Jun WANGShuming XUJacek KOREC
    • Jun WANGShuming XUJacek KOREC
    • H01L27/06H01L21/336
    • H01L27/0629H01L27/0727H01L29/1083H01L29/402H01L29/4175H01L29/41766H01L29/456H01L29/66659H01L29/7835H01L29/861
    • A power MOSFET is formed in a semiconductor device with a parallel combination of a shunt resistor and a diode-connected MOSFET between a gate input node of the semiconductor device and a gate of the power MOSFET. A gate of the diode-connected MOSFET is connected to the gate of the power MOSFET. Source and drain nodes of the diode-connected MOSFET are connected to a source node of the power MOSFET through diodes. The drain node of the diode-connected MOSFET is connected to the gate input node of the semiconductor device. The source node of the diode-connected MOSFET is connected to the gate of the power MOSFET. The power MOSFET and the diode-connected MOSFET are integrated into the substrate of the semiconductor device so that the diode-connected MOSFET source and drain nodes are electrically isolated from the power MOSFET source node through a pn junction.
    • 在半导体器件的栅极输入节点和功率MOSFET的栅极之间,在半导体器件中形成并联组合的分流电阻器和二极管连接的MOSFET的功率MOSFET。 二极管连接的MOSFET的栅极连接到功率MOSFET的栅极。 二极管连接的MOSFET的源极和漏极节点通过二极管连接到功率MOSFET的源极节点。 二极管连接的MOSFET的漏极节点连接到半导体器件的栅极输入节点。 二极管连接的MOSFET的源节点连接到功率MOSFET的栅极。 功率MOSFET和二极管连接的MOSFET集成到半导体器件的衬底中,使得二极管连接的MOSFET源极和漏极节点通过pn结与功率MOSFET源极节点电隔离。