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    • 21. 发明申请
    • BLOW-INJECTION METHOD FOR PRODUCING PLASTIC FLOWER POT
    • 用于生产塑料花盆的喷射喷射方法
    • US20110266708A1
    • 2011-11-03
    • US13018563
    • 2011-02-01
    • Jun WANG
    • Jun WANG
    • B29C49/46B29C49/64B29C49/00
    • B29C45/1706B29L2031/7136
    • A blow-injection method for producing plastic flower pots comprising the following steps: fixing the fixed half, locking the moving half, injection, pressure maintaining, cooling, opening mould and ejection, wherein the gas pin is connected to the fixed half, and in pressure maintaining step, the nitrogen is blown in via the gas pin. The present invention integrate blow molding with injection molding, and is one-step formed, so the edge of the pots produced by the method of the invention is smooth and round, the edge of the pot is three-dimensional, Also, the center of the edge of the pot is hollow, the weight is reduced to enable cost-saving.
    • 一种用于生产塑料花盆的吹塑方法,包括以下步骤:固定固定半部,锁定移动半部,注射,保压,冷却,打开模具和喷射,其中气体销连接到固定半部,并且在 压力保持步骤,氮气通过气体销被吹入。 本发明将吹塑成型与注塑成型相结合,是一步成形的,因此本发明方法生产的罐边缘是圆滑的,锅的边缘是三维的,而且, 锅的边缘是中空的,重量减轻以节省成本。
    • 22. 发明申请
    • FLOWER POT WITH DOUBLE REVERS
    • 花瓶与双反转
    • US20110056130A1
    • 2011-03-10
    • US12786816
    • 2010-05-25
    • Jun WANG
    • Jun WANG
    • A01G9/02
    • A01G9/02
    • A flower pot with double revers has a pot body, a ring-shaped stepped unit extending outward disposed on the upper part of the pot, and a connecting circle with an “n” shaped cross-section is disposed on the top of the ring-shaped stepped unit. The connecting circle has an inside circle, an outside circle and a top circle, and the top of the inside circle and the top of the outside circle are connected by the top circle. The outside circle and the top of the ring-shaped stepped unit are connected by an inside screw. The inside circle and the outside circle form a connecting circle connected to the top opening of the pot to strengthen the revers of the flower pot.
    • 具有双重反转的花盆具有罐体,在锅的上部向外延伸的环状台阶单元,并且具有“n”形横截面的连接圆设置在环形顶部的顶部, 形状的阶梯单元。 连接圆具有内圆,外圆和顶圆,内圆的顶部和外圆的顶部通过顶圆连接。 外圈和环形台阶单元的顶部通过内螺纹连接。 内圈和外圈形成连接到锅顶部的连接圆,以加强花盆的反转。
    • 29. 发明申请
    • POWER MOSFET WITH INTEGRATED GATE RESISTOR AND DIODE-CONNECTED MOSFET
    • 具有集成栅极电阻和二极管连接MOSFET的功率MOSFET
    • US20130009253A1
    • 2013-01-10
    • US13540862
    • 2012-07-03
    • Jun WANGShuming XUJacek KOREC
    • Jun WANGShuming XUJacek KOREC
    • H01L27/06H01L21/336
    • H01L27/0629H01L27/0727H01L29/1083H01L29/402H01L29/4175H01L29/41766H01L29/456H01L29/66659H01L29/7835H01L29/861
    • A power MOSFET is formed in a semiconductor device with a parallel combination of a shunt resistor and a diode-connected MOSFET between a gate input node of the semiconductor device and a gate of the power MOSFET. A gate of the diode-connected MOSFET is connected to the gate of the power MOSFET. Source and drain nodes of the diode-connected MOSFET are connected to a source node of the power MOSFET through diodes. The drain node of the diode-connected MOSFET is connected to the gate input node of the semiconductor device. The source node of the diode-connected MOSFET is connected to the gate of the power MOSFET. The power MOSFET and the diode-connected MOSFET are integrated into the substrate of the semiconductor device so that the diode-connected MOSFET source and drain nodes are electrically isolated from the power MOSFET source node through a pn junction.
    • 在半导体器件的栅极输入节点和功率MOSFET的栅极之间,在半导体器件中形成并联组合的分流电阻器和二极管连接的MOSFET的功率MOSFET。 二极管连接的MOSFET的栅极连接到功率MOSFET的栅极。 二极管连接的MOSFET的源极和漏极节点通过二极管连接到功率MOSFET的源极节点。 二极管连接的MOSFET的漏极节点连接到半导体器件的栅极输入节点。 二极管连接的MOSFET的源节点连接到功率MOSFET的栅极。 功率MOSFET和二极管连接的MOSFET集成到半导体器件的衬底中,使得二极管连接的MOSFET源极和漏极节点通过pn结与功率MOSFET源极节点电隔离。