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21. 发明申请

US20070194279A1 Doped semiconductor nanocrystals and methods of making same 有权
标题翻译：掺杂半导体纳米晶体及其制备方法
公开(公告)号：US20070194279A1
公开(公告)日：2007-08-23
申请号：US11410663
申请日：2006-04-25
申请人： Xiaogang Peng , Narayan Pradhan
发明人： Xiaogang Peng , Narayan Pradhan
IPC分类号： C09K11/08 , C09K11/77 , B32B5/16
CPC分类号： C09K11/02 , C09K11/574 , C09K11/584 , C09K11/883 , Y10T428/2991 , Y10T428/2993 , Y10T428/2995
摘要： A method of synthesizing doped semiconductor nanocrystals. In one embodiment, the method includes the steps of combining a metal oxide or metal salt precursor, a ligand, and a solvent to form a metal complex in a reaction vessel; admixing an anionic precursor with the metal complex at a first temperature, T1, sufficient to form a plurality of host nanocrystals; doping a metal dopant onto the plurality of the host nanocrystals at a second temperature, T2, such that a layer of the metal dopant is formed substantially over the surface of a host nanocrystal that receives a metal dopant; and adding a mixture having the anionic precursor and the metal oxide or metal salt precursor at a third temperature, T3, into the reaction vessel to allow regrowth of host nanocrystals on the surface of the layer of the metal dopant formed substantially over the surface of a host nanocrystal that receives a metal dopant to form a plurality of doped nanocrystals, wherein the doped nanocrystals show a characteristic of semiconductor.
摘要翻译：一种合成掺杂半导体纳米晶体的方法。在一个实施方案中，该方法包括将金属氧化物或金属盐前体，配体和溶剂组合以在反应容器中形成金属络合物的步骤; 在第一温度T 1下将阴离子前体与金属络合物混合，足以形成多个主体纳米晶体; 在第二温度T 2下将金属掺杂剂掺杂到多个主体纳米晶体上，使得金属掺杂剂的层基本上形成在接收金属掺杂剂的主体纳米晶体的表面上; 并在第三温度T 3 3将具有阴离子前体和金属氧化物或金属盐前体的混合物加入到反应容器中，以允许在金属层的表面上的主体纳米晶体的再生长基本上形成在接纳金属掺杂剂以形成多个掺杂的纳米晶体的主体纳米晶体的表面上的掺杂剂，其中掺杂的纳米晶体显示出半导体的特性。

22. 发明授权

US07105051B2 High quality colloidal nanocrystals and methods of preparing the same in non-coordinating solvents 有权
标题翻译：高品质胶体纳米晶体及其在非配位溶剂中的制备方法
公开(公告)号：US07105051B2
公开(公告)日：2006-09-12
申请号：US10209329
申请日：2002-07-30
申请人： Xiaogang Peng , Weiyong Yu , David Battaglia
发明人： Xiaogang Peng , Weiyong Yu , David Battaglia
IPC分类号： C30B25/12
CPC分类号： C30B5/00 , C30B7/00 , C30B29/40 , C30B29/48 , C30B29/605 , G01N15/0205 , G01N2015/0038
摘要： The present invention provides substantially monodisperse colloidal nanocrystals and new preparative methods for the synthesis of substantially monodisperse colloidal nanocrystals. These synthetic methods afford the ability to tune nanocrystal size and size distribution. By using non-coordinating solvents in the synthetic process, these procedures constitute easier, less expensive, safer, and more environmentally “green” methods than those currently in use. This invention is generally applicable to any II–VI or III–V semiconductor material, and may be useful in generating metal-nonmetal compounds involving transition metals as well.
摘要翻译：本发明提供基本上单分散的胶态纳米晶体和用于合成基本上单分散的胶体纳米晶体的新的制备方法。这些合成方法提供了调整纳米晶体尺寸和尺寸分布的能力。通过在合成过程中使用非配位溶剂，这些方法比目前使用的方法更容易，更便宜，更安全，更环保的“绿色”方法。本发明通常适用于任何II-VI或III-V半导体材料，并且也可用于产生涉及过渡金属的金属 - 非金属化合物。

23. 发明申请

US20060130741A1 HIGH QUALITY COLLOIDAL NANOCRYSTALS AND METHODS OF PREPARING THE SAME IN NON-COORDINATING SOLVENTS 有权
标题翻译：高质量的胶体纳米晶体及其在非协调溶液中的制备方法
公开(公告)号：US20060130741A1
公开(公告)日：2006-06-22
申请号：US10209329
申请日：2002-07-30
申请人： Xiaogang Peng , Weiyong Yu , David Battaglia
发明人： Xiaogang Peng , Weiyong Yu , David Battaglia
IPC分类号： C30B7/00 , C30B21/02 , C30B28/06
CPC分类号： C30B5/00 , C30B7/00 , C30B29/40 , C30B29/48 , C30B29/605 , G01N15/0205 , G01N2015/0038
摘要： The present invention provides substantially monodisperse colloidal nanocrystals and new preparative methods for the synthesis of substantially monodisperse colloidal nanocrystals. These synthetic methods afford the ability to tune nanocrystal size and size distribution. By using non-coordinating solvents in the synthetic process, these procedures constitute easier, less expensive, safer, and more environmentally “green” methods than those currently in use. This invention is generally applicable to any II-VI or III-V semiconductor material, and may be useful in generating metal-nonmetal compounds involving transition metals as well.
摘要翻译：本发明提供基本上单分散的胶态纳米晶体和用于合成基本上单分散的胶体纳米晶体的新的制备方法。这些合成方法提供了调整纳米晶体尺寸和尺寸分布的能力。通过在合成过程中使用非配位溶剂，这些方法比目前使用的方法更容易，更便宜，更安全，更环保的“绿色”方法。本发明通常适用于任何II-VI或III-V半导体材料，并且也可用于产生涉及过渡金属的金属 - 非金属化合物。

24. 发明申请

US20050004293A1 Nanocrystals in ligand boxes exhibiting enhanced chemical, photochemical, and thermal stability, and methods of making the same 有权
标题翻译：显示出增强的化学，光化学和热稳定性的配体盒中的纳米晶体及其制备方法
公开(公告)号：US20050004293A1
公开(公告)日：2005-01-06
申请号：US10679247
申请日：2003-10-03
申请人： Xiaogang Peng , Haiyan Chen , Wenzhou Guo , Y. Wang
发明人： Xiaogang Peng , Haiyan Chen , Wenzhou Guo , Y. Wang
IPC分类号： C01B9/00 , C01B13/14 , C01B19/00 , C01G11/02 , C09K11/02 , C09K11/56 , C09K11/88 , C30B7/00 , C30B29/60 , G01N33/545 , G01N33/58 , C08K3/30 , C08K3/08 , C08K3/18
CPC分类号： B82Y30/00 , B22F2999/00 , B82Y15/00 , C01B9/00 , C01B13/145 , C01B19/007 , C01G11/02 , C01P2002/82 , C01P2002/84 , C01P2002/86 , C01P2002/89 , C01P2004/04 , C01P2004/64 , C01P2004/80 , C01P2006/37 , C09K11/02 , C09K11/565 , C09K11/883 , C30B7/00 , C30B7/005 , C30B29/605 , G01N33/545 , G01N33/588 , B22F1/0007 , B22F1/0018
摘要： Dendron ligands or other branched ligands with cross-linkable groups were coordinated to colloidal inorganic nanoparticles, including nanocrystals, and substantially globally cross-linked through different strategies, such as ring-closing metathesis (RCM), dendrimer-bridging methods, and the like. This global cross-linking reaction sealed each nanocrystal within a dendron box to yield box-nanocrystals which showed dramatically enhanced stability against chemical, photochemical and thermal treatments in comparison to the non-cross-linked dendron-nanocrystals. Empty dendron boxes possessing a very narrow size distribution were formed by the dissolution of the inorganic nanocrystals contained therein upon acid or other etching treatments.
摘要翻译： Dendron配体或具有可交联基团的其它支链配体与胶体无机纳米颗粒（包括纳米晶体）配位，并通过不同的策略（例如闭环复分解（RCM）），树枝状聚合物桥接方法等进行基本全局交联。这种全球交联反应将每个纳米晶体密封在树枝状体内以产生盒状纳米晶体，与非交联树枝状纳米晶体相比显示出显着增强的化学，光化学和热处理稳定性。通过在酸或其他蚀刻处理中所含的无机纳米晶体的溶解形成具有非常窄尺寸分布的空的树枝状结构。

25. 发明授权

US09260652B2 Metal doped semiconductor nanocrystals and methods of making the same 有权
标题翻译：金属掺杂半导体纳米晶体及其制造方法
公开(公告)号：US09260652B2
公开(公告)日：2016-02-16
申请号：US13381777
申请日：2010-07-01
申请人： Xiaogang Peng , Renguo Xie
发明人： Xiaogang Peng , Renguo Xie
IPC分类号： C09K11/88 , C09K11/58 , C09K11/62 , C09K11/02 , C09K11/70
CPC分类号： C09K11/02 , C09K11/70 , C09K11/883
摘要： Doped semiconductor nanocrystals and methods of making the same are provided.
摘要翻译：提供掺杂的半导体纳米晶体及其制备方法。

26. 发明申请

US20120261624A1 Metal Doped Semiconductor Nanocrystals And Methods of Making The Same 有权
标题翻译：金属掺杂半导体纳米晶体及其制作方法
公开(公告)号：US20120261624A1
公开(公告)日：2012-10-18
申请号：US13381777
申请日：2010-07-01
申请人： Xiaogang Peng , Renguo Xie
发明人： Xiaogang Peng , Renguo Xie
IPC分类号： H01B1/06 , B82Y40/00 , B82Y30/00
CPC分类号： C09K11/02 , C09K11/70 , C09K11/883
摘要： Doped semiconductor nanocrystals and methods of making the same are provided.
摘要翻译：提供掺杂的半导体纳米晶体及其制备方法。

27. 发明授权

US08007757B2 Multi-dimensional complex nanocrystal structures and methods of making same 有权
标题翻译：多维复合纳米晶体结构及其制备方法
公开(公告)号：US08007757B2
公开(公告)日：2011-08-30
申请号：US11804215
申请日：2007-05-17
申请人： Xiaogang Peng , Arun Narayanaswamy , Narayan Pradhan
发明人： Xiaogang Peng , Arun Narayanaswamy , Narayan Pradhan
IPC分类号： C01G11/00
CPC分类号： C01G15/00 , B82Y30/00 , C01G9/00 , C01G9/02 , C01G45/02 , C01G51/02 , C01P2002/82 , C01P2004/04 , C01P2004/62 , C01P2004/64 , Y10S977/734 , Y10S977/773 , Y10S977/774 , Y10S977/775 , Y10S977/811 , Y10S977/813 , Y10S977/824
摘要： A method of synthesizing nanostructures. In one embodiment, the method includes the step of heating a reaction mixture at an elevated temperature, T, for a period of time effective to allow the growth of desired nanostructures. The reaction mixture contains an amount, P, of a carboxylate salt and an amount, L, of a fatty acid ligand, defining a molar ratio of the fatty acid ligand to the carboxylate salt, α=L/P, and a hydrocarbon solvent. The reaction mixture is characterizable with a critical ligand protection, μ, associating with the chemical structure of the carboxylate salt such that when α μ, the reaction mixture is in a sufficient ligand protection (SLP) domain. The nanostructures are formed in the form of single crystalline and nearly monodisperse nanocrystals, which are in the form of dot-shaped nanocrystals, when the reaction mixture is in the SLP domain, and in the form of nanoflowers, when the reaction mixture is in the LLP domain, respectively.
摘要翻译：一种合成纳米结构的方法。在一个实施方案中，该方法包括在升高的温度T下加热反应混合物一段有效的时间以允许所需的纳米结构生长的步骤。反应混合物含有一定量的P，羧酸盐和一定量的脂肪酸配体的L，其定义了脂肪酸配体与羧酸盐的摩尔比α= L / P和烃溶剂。该反应混合物具有临界配体保护μ，与羧酸盐的化学结构相关，使得当α<μ时，反应混合物处于有限的配体保护（LLP）结构域，当α>μ时，反应混合物处于足够的配体保护（SLP）结构域。当反应混合物处于SLP结构域中时，纳米结构以单晶和几乎单分散的纳米晶体的形式形成，其形式为点状纳米晶体，当反应混合物处于 LLP域。

28. 发明授权

US07919012B2 Monodisperse core/shell and other complex structured nanocrystals and methods of preparing the same 有权
标题翻译：单分散核/壳等复杂结构纳米晶体及其制备方法
公开(公告)号：US07919012B2
公开(公告)日：2011-04-05
申请号：US12721185
申请日：2010-03-10
申请人： Xiaogang Peng , Jianqing Li , David Battaglia , Y. Andrew Wang , Yunjun Wang
发明人： Xiaogang Peng , Jianqing Li , David Battaglia , Y. Andrew Wang , Yunjun Wang
IPC分类号： C09K11/02 , C09K11/77 , C09K11/56 , C09K11/70 , C09K11/72 , C09K11/54
CPC分类号： C09K11/025 , B82Y15/00 , B82Y30/00 , C09K11/02 , C09K11/565 , C09K11/703 , C09K11/7414 , C09K11/7492 , C09K11/883 , C30B7/00 , C30B29/605 , G01N33/588 , H01L31/0352 , H01L31/036 , H01L33/18 , H01L33/28 , H01S3/169 , H01S5/30 , Y10T428/2991
摘要： The present invention provides new compositions containing nearly monodisperse colloidal core/shell semiconductor nanocrystals with high photoluminescence quantum yields (PL QY), as well as other complex structured semiconductor nanocrystals. This invention also provides new synthetic methods for preparing these nanocrystals, and new devices comprising these compositions. In addition to core/shell semiconductor nanocrystals, this patent application also provides complex semiconductor nanostructures, quantum shells, quantum wells, doped nanocrystals, and other multiple-shelled semiconductor nanocrystals.
摘要翻译：本发明提供了包含具有高光致发光量子产率（PL QY）的近似单分散胶体核/壳半导体纳米晶体以及其它复合结构化半导体纳米晶体的新组合物。本发明还提供了用于制备这些纳米晶体的新的合成方法，以及包含这些组合物的新装置。除了核/壳半导体纳米晶体之外，该专利申请还提供复杂的半导体纳米结构，量子壳，量子阱，掺杂的纳米晶体和其他多壳半导体纳米晶体。

29. 发明申请

US20100163800A1 Monodisperse Core/Shell and Other Complex Structured Nanocrystals and Methods of Preparing the Same 有权
公开(公告)号：US20100163800A1
公开(公告)日：2010-07-01
申请号：US12721185
申请日：2010-03-10
申请人： Xiaogang Peng , Jianqing Li , David Battaglia , Y. Andrew Wang , Yunjun Wang
发明人： Xiaogang Peng , Jianqing Li , David Battaglia , Y. Andrew Wang , Yunjun Wang
IPC分类号： C09K11/56 , C09K11/54 , C09K11/70 , C09K11/08
CPC分类号： C09K11/025 , B82Y15/00 , B82Y30/00 , C09K11/02 , C09K11/565 , C09K11/703 , C09K11/7414 , C09K11/7492 , C09K11/883 , C30B7/00 , C30B29/605 , G01N33/588 , H01L31/0352 , H01L31/036 , H01L33/18 , H01L33/28 , H01S3/169 , H01S5/30 , Y10T428/2991
摘要： The present invention provides new compositions containing nearly monodisperse colloidal core/shell semiconductor nanocrystals with high photoluminescence quantum yields (PL QY), as well as other complex structured semiconductor nanocrystals. This invention also provides new synthetic methods for preparing these nanocrystals, and new devices comprising these compositions. In addition to core/shell semiconductor nanocrystals, this patent application also provides complex semiconductor nanostructures, quantum shells, quantum wells, doped nanocrystals, and other multiple-shelled semiconductor nanocrystals.

30. 发明申请

US20100090164A1 INDIUM ARSENIDE NANOCRYSTALS AND METHODS OF MAKING THE SAME 审中-公开
标题翻译：纳米复合纳米晶体及其制备方法
公开(公告)号：US20100090164A1
公开(公告)日：2010-04-15
申请号：US12482163
申请日：2009-06-10
申请人： Xiaogang Peng , Renguo Xie
发明人： Xiaogang Peng , Renguo Xie
IPC分类号： C09K11/62 , B22F9/16 , G01N21/00
CPC分类号： C09K11/02 , C09K11/7492 , Y10T428/2982
摘要： The present invention provides high quality monodisperse or substantially monodisperse InAs nanocrystals in the as-prepared state. In some embodiments, the as-prepared substantially monodisperse InAs nanocrystals demonstrate a photoluminescence of between about 700 nm and 1400 nm.
摘要翻译：本发明提供在准备状态下的高质量单分散或基本上单分散的InAs纳米晶体。在一些实施方案中，所制备的基本上单分散的InAs纳米晶体表现出约700nm和1400nm之间的光致发光。

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