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21. 发明申请

US20090045479A1 Image sensor with vertical drain structures 审中-公开
标题翻译：具有垂直排水结构的图像传感器
公开(公告)号：US20090045479A1
公开(公告)日：2009-02-19
申请号：US12012348
申请日：2008-02-01
申请人： Jeong-Hoon Bae , Tae-Seok Oh , Ki-Hong Kim , Won-Je Park
发明人： Jeong-Hoon Bae , Tae-Seok Oh , Ki-Hong Kim , Won-Je Park
IPC分类号： H01L27/144
CPC分类号： H01L27/14689 , H01L27/14603 , H01L27/1463 , H01L27/14654
摘要： An image sensor includes an array of photo-detectors, a plurality of conductive line regions, and a conductive junction region. The array of photo-detectors is formed in a semiconductor substrate. Each conductive line region is formed under a respective line of photo-detectors along a first direction in the substrate. The conductive junction region is formed between the array of photo-detectors and the plurality of conductive line regions in the substrate. The conductive line regions and the conductive junction region form vertical drain structures for the photo-detectors.
摘要翻译：图像传感器包括光电检测器阵列，多个导线区域和导电接合区域。光电检测器阵列形成在半导体衬底中。每个导线区域沿着衬底中的第一方向在相应的光电检测器线下形成。导电结区域形成在光电检测器阵列与衬底中的多个导线区域之间。导电线区域和导电结区域形成用于光电检测器的垂直漏极结构。

22. 发明申请

US20050274995A1 Image sensor and method of forming the same 审中-公开
标题翻译：图像传感器及其形成方法
公开(公告)号：US20050274995A1
公开(公告)日：2005-12-15
申请号：US11152452
申请日：2005-06-14
申请人： Won-Je Park
发明人： Won-Je Park
IPC分类号： H01L27/146 , H01L31/0216 , H01L31/062 , H01L31/10
CPC分类号： H01L27/1462 , H01L27/14609 , H01L27/14643 , H01L31/02161
摘要： An image sensor includes a photodiode formed in a substrate, a buffer oxide layer, a blocking layer, an upper oxide layer, and a transmission supplementary layer. The buffer oxide layer covers the photodiode, and the blocking layer is disposed on the buffer oxide layer to cover the photodiode. The upper oxide layer covers the blocking layer, and the transmission supplementary layer is interposed between the upper oxide layer and the buffer oxide layer to cover the photodiode. The transmission supplementary layer has a refractive index between the refractive index of the blocking layer and at least one reflective index selected from the refractive indexes of the buffer oxide layer and upper oxide layer.
摘要翻译：图像传感器包括形成在基板中的光电二极管，缓冲氧化物层，阻挡层，上氧化物层和透射辅助层。缓冲氧化物层覆盖光电二极管，并且阻挡层设置在缓冲氧化物层上以覆盖光电二极管。上氧化层覆盖阻挡层，并且传输辅助层介于上氧化物层和缓冲氧化物层之间以覆盖光电二极管。透射辅助层具有在阻挡层的折射率与从缓冲氧化物层和上部氧化物层的折射率中选择的至少一种反射率之间的折射率。

23. 发明授权

US08143142B2 Method of fabricating epi-wafer, epi-wafer fabricated by the method, and image sensor fabricated using the epi-wafer 失效
标题翻译：通过该方法制造外延晶片，外延晶片的方法和使用外延晶片制造的图像传感器
公开(公告)号：US08143142B2
公开(公告)日：2012-03-27
申请号：US12723882
申请日：2010-03-15
申请人： Young-Soo Park , Gi-Jung Kim , Won-Je Park , Jae-Sik Bae
发明人： Young-Soo Park , Gi-Jung Kim , Won-Je Park , Jae-Sik Bae
IPC分类号： H01L21/322
CPC分类号： H01L21/22 , H01L21/02532 , H01L21/02639 , H01L21/02658 , H01L21/324 , H01L27/14603 , H01L27/14612 , H01L27/14618 , H01L27/1463 , H01L27/14643 , H01L27/14689 , H01L2224/48095 , H01L2224/48227 , H01L2924/00014
摘要： A method of fabricating an epi-wafer includes providing a wafer including boron by cutting a single crystal silicon ingot, growing an insulating layer on one surface of the wafer, performing thermal treatment of the wafer, removing the insulating layer formed on one surface of the wafer, mirror-surface-grinding one surface of the wafer, and growing an epitaxial layer on one surface of the wafer and forming a high-density boron layer within the wafer that corresponds to the interface between the wafer and the epitaxial layer.
摘要翻译：制造外延晶片的方法包括通过切割单晶硅锭来提供包括硼的晶片，在晶片的一个表面上生长绝缘层，对晶片进行热处理，去除形成在晶片的一个表面上的绝缘层晶片，镜面研磨晶片的一个表面，以及在晶片的一个表面上生长外延层，并且在晶片内形成与晶片和外延层之间的界面相对应的高密度硼层。

24. 发明授权

US07586140B2 CMOS image sensors including pickup regions 有权
标题翻译： CMOS图像传感器包括拾取区域
公开(公告)号：US07586140B2
公开(公告)日：2009-09-08
申请号：US11472058
申请日：2006-06-21
申请人： Won-Je Park
发明人： Won-Je Park
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/14643 , H01L27/14689
摘要： A CMOS image sensor includes a field isolation film defining first, second, and third active fields in a substrate having a first conductivity type, a photodiode region in the first active field, the photodiode region having a second conductivity type opposite the first conductivity type, and a floating diffusion region of the second conductivity type in the second active field. A source follower gate is conductively connected with the floating diffusion region and intersects the second active field. First and second source/drain regions of the second conductivity type are provided in the second active field at opposite sides of the source follower gate, and a pickup region is disposed in the third active field. The third active field may be adjacent a portion of the second active field where the first source/drain region or the second source/drain region is located, and the floating diffusion region may be isolated from the first and second source/drain regions.
摘要翻译： CMOS图像传感器包括在具有第一导电类型的衬底中限定第一，第二和第三有源场的场隔离膜，第一有源场中的光电二极管区域，具有与第一导电类型相反的第二导电类型的光电二极管区域，以及第二有源场中的第二导电类型的浮动扩散区。源极跟随器栅极与浮动扩散区域导电连接并与第二有源场相交。在源极跟随器栅极的相对侧的第二有源场中提供第二导电类型的第一和第二源极/漏极区域，并且拾取区域设置在第三有源场中。第三有源场可以与第一源极/漏极区或第二源极/漏极区所在的第二有源场的一部分相邻，并且浮动扩散区可以与第一和第二源极/漏极区隔离。

25. 发明申请

US20080081396A1 Method of fabricating image sensor having inner lens 有权
标题翻译：制造具有内透镜的图像传感器的方法
公开(公告)号：US20080081396A1
公开(公告)日：2008-04-03
申请号：US11882155
申请日：2007-07-31
申请人： Jong-Wook Hong , Tae-Seok Oh , Duk-Min Yi , Young-Mook Oh , Won-Je Park
发明人： Jong-Wook Hong , Tae-Seok Oh , Duk-Min Yi , Young-Mook Oh , Won-Je Park
IPC分类号： H01L21/00
CPC分类号： H01L27/14632 , H01L27/14621 , H01L27/14625 , H01L27/14636 , H01L27/14645 , H01L27/14687
摘要： A method of fabricating an image sensor according to example embodiments may include forming a photodiode in a photoelectric conversion region of a substrate and forming an etch stop layer on the substrate. The etch stop layer may be patterned to form an inner lens on the photoelectric conversion region and an etch stop layer pattern on a transistor region of the substrate. A metal interconnection structure may be formed on the inner lens and the etch stop layer pattern. Accordingly, the number of additional processes for fabricating an image sensor may be reduced.
摘要翻译：根据示例性实施例的制造图像传感器的方法可以包括在衬底的光电转换区域中形成光电二极管，并在衬底上形成蚀刻停止层。蚀刻停止层可以被图案化以在光电转换区域上形成内透镜，并且在衬底的晶体管区域上形成蚀刻停止层图案。可以在内透镜和蚀刻停止层图案上形成金属互连结构。因此，可以减少用于制造图像传感器的附加处理的数量。

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