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    • 23. 发明授权
    • Methods and circuitry for correcting temperature-induced errors in
microbolometer focal plane array
    • 用于校正微测辐射计焦平面阵列温度导致误差的方法和电路
    • US5756999A
    • 1998-05-26
    • US799663
    • 1997-02-11
    • William J. ParrishJames T. Woolaway
    • William J. ParrishJames T. Woolaway
    • G01J5/20G01J5/22H04N5/33H04N5/365G01J5/24
    • H04N5/33G01J5/20G01J5/22H04N5/3651
    • Correction for temperature-induced non-uniformities in the response characteristics of the microbolometers in an infrared focal plane array (FPA) is performed by applying a non-uniform corrective bias to the individual microbolometers. The corrective bias is applied either before or during the bias or integration period during which the detectors are sampled. The bias-correction can be applied to two-dimensional detector multiplexers at each column amplifier input, the reference potential for each column amplifier or the voltage supply for each detector element. The magnitude of each corrective bias is determined by calibrating the detectors at different temperatures and different levels of incident infrared radiation. According to another aspect of this invention, a microbolometer which is thermally-shorted to the substrate on which the read out integrated circuit (ROIC) is formed is used along with the sensing microbolometer to compensate for variations in temperature. Circuitry for providing on-ROIC substrate temperature control is also described. This invention allows the operation of a microbolometer FPA over a wider range of device substrate temperatures and thereby significantly reduces the complexity and cost of the system as compared with the conventional technique of cooling the FPA.
    • 红外焦平面阵列(FPA)中的微量热计的响应特性中的温度诱导的不均匀性的校正是通过对各个微量热计进行不均匀的校正偏差来进行的。 纠正偏压在采样检测器的偏置或积分期间之前或期间施加。 偏置校正可以应用于每个列放大器输入处的二维检测器多路复用器,每个列放大器的参考电位或每个检测器元件的电压源。 每个校正偏差的大小通过校准不同温度和不同入射红外辐射水平的检测器来确定。 根据本发明的另一方面,与传感微电热计一起使用热短路至其上形成读出的集成电路(ROIC)的衬底的微热辐射计,以补偿温度变化。 还描述了用于提供ROIC衬底温度控制的电路。 与传统的冷却FPA技术相比,本发明允许在更宽范围的器件衬底温度下操作微热辐射计FPA,从而显着降低系统的复杂性和成本。
    • 24. 发明授权
    • Charge coupled device open circuit image detector
    • 电荷耦合器件开路图像检测器
    • US4479139A
    • 1984-10-23
    • US459281
    • 1983-01-19
    • William J. Parrish
    • William J. Parrish
    • H01L27/148H01L29/768H01L29/78H01L27/14H01L31/00H03K3/42
    • H01L27/14881H01L29/76808
    • An open circuit photodiode includes a capacitor plate formed monolithically with a forward biased P-N junction diode. The capacitor plate, together with one side of the P-N junction, forms a capacitor which is charged by the photocurrent of the diode. The voltage across the capacitor controls the output current of a charge coupled device (CCD) register. The invention operates in an open circuit configuration so that no net current flows across the diode junction as long as the flux of incident radiation is constant. If the incident radiation flux changes, current flows across the diode junction so that the capacitor is charged (or discharged) to a new voltage level corresponding to the new radiation flux level. As a result, the open circuit voltage of the capacitor modulates as a function of the change in incident radiation flux. The non-linearity inherent in the open circuit voltage response of the diode to incident radiation flux compensates for the nonlinearity in the output current response of the CCD register so that the total response is linear.
    • 开路光电二极管包括与正向偏压的P-N结二极管单片形成的电容器板。 电容器板与P-N结的一侧一起形成由二极管的光电流充电的电容器。 电容两端的电压控制电荷耦合器件(CCD)寄存器的输出电流。 本发明以开路结构工作,只要入射辐射的通量恒定,就不会在二极管结上流过净电流。 如果入射的辐射通量发生变化,则电流流过二极管结,使得电容器被充电(或放电)到与新的辐射通量水平对应的新的电压电平。 结果,电容器的开路电压根据入射辐射通量的变化而调制。 二极管对入射辐射通量的开路电压响应固有的非线性补偿了CCD寄存器的输出电流响应中的非线性,使得总响应是线性的。
    • 25. 发明授权
    • Charge coupled device focal plane integrater
    • 电荷耦合器件焦平面积分器
    • US4331889A
    • 1982-05-25
    • US156138
    • 1980-06-03
    • William J. Parrish
    • William J. Parrish
    • G11C7/00H01L27/105H01L27/148H04N5/355H04N5/372H03K3/42G11C19/28H01L29/78
    • H01L27/1057G11C7/00H01L27/14875H04N3/1556
    • In a charge transfer device imager, photodetector output current is accumulated and stored during an integration period in an analog potential well in the substrate surface potential adjacent the photodetector, the analog well being reset each time the detector changes the amount of stored charge by a preselected fraction of the storing well capacity, simultaneously incrementing a digital count. At the end of each integration period, both the contents of the analog well and the digital count are read into an output register. As a result, the length of the integration period may be significantly extended without regard to the charge storing capacity of the charge transfer device, thus improving the signal-to-noise ratio and the dynamic range of the imager. In the preferred embodiment, the amount of charge stored in the analog potential well is sensed by sensing the potential of the photodetector, where the photodetector comprises a diode diffusion in the substrate.
    • 在电荷转移装置成像器中,光电检测器输出电流在累积期间被累积并存储在与光电检测器相邻的衬底表面电位中的模拟电位阱中,每当检测器通过预先选择的存储器改变存储电荷的量时,复位模拟阱 存储井容量的一部分,同时增加数字计数。 在每个积分周期结束时,将模拟井和数字计数的内容都读入输出寄存器。 结果,积分周期的长度可以显着地延长,而不考虑电荷转移装置的电荷存储容量,从而提高成像器的信噪比和动态范围。 在优选实施例中,通过感测光电检测器的电位来感测存储在模拟势阱中的电荷量,其中光电检测器在衬底中包括二极管扩散。