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21. 发明申请

US20080217761A1 Structure of semiconductor device package and method of the same 审中-公开
标题翻译：半导体器件封装的结构及其方法
公开(公告)号：US20080217761A1
公开(公告)日：2008-09-11
申请号：US11715358
申请日：2007-03-08
申请人： Wen-Kun Yang , Chih-Ming Chen , Hsien-Wen Hsu
发明人： Wen-Kun Yang , Chih-Ming Chen , Hsien-Wen Hsu
IPC分类号： H01L23/053
CPC分类号： H01L25/50 , H01L23/5389 , H01L24/19 , H01L24/24 , H01L24/82 , H01L24/97 , H01L25/0652 , H01L25/0655 , H01L25/0657 , H01L2224/05001 , H01L2224/05026 , H01L2224/05548 , H01L2224/12105 , H01L2224/24137 , H01L2224/24227 , H01L2224/32225 , H01L2224/32245 , H01L2224/73267 , H01L2224/97 , H01L2225/06524 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01059 , H01L2924/01068 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/014 , H01L2924/09701 , H01L2924/10253 , H01L2924/12041 , H01L2924/14 , H01L2924/15153 , H01L2924/15165 , H01L2924/15311 , H01L2924/157 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/351 , H01L2224/82 , H01L2924/00 , H01L2224/05599 , H01L2224/05099
摘要： The present invention provides a semiconductor device package comprising a substrate with at lease a pre-formed die receiving cavity formed and terminal contact metal pads formed within an upper surface of the substrate. At lease a first die is disposed within the die receiving cavity. A first dielectric layer is formed on the first die and the substrate and refilled into a gap between the first die and the substrate to absorb thermal mechanical stress there between. A first re-distribution layer (RDL) is formed on the first dielectric layer and coupled to the first die. A second dielectric layer is formed on the first RDL, and then a second die is disposed on the second dielectric layer and surrounded by core pastes having through holes thereon. A second re-distribution layer (RDL) is formed on the core pastes to fill the through holes, and then a third dielectric layer formed on the second RDL.
摘要翻译：本发明提供一种半导体器件封装，其包括至少形成有预形成的裸片接收腔的衬底和形成在衬底的上表面内的端接触金属衬垫。至少第一模头设置在模具接纳腔内。第一电介质层形成在第一裸片和衬底上，并重新填充到第一裸片与衬底之间的间隙中以吸收其间的热机械应力。第一再分配层（RDL）形成在第一电介质层上并且耦合到第一裸片。在第一RDL上形成第二电介质层，然后在第二电介质层上设置第二芯片，并且在其上具有通孔的核心浆料包围。在核心浆料上形成第二再分布层（RDL）以填充通孔，然后形成在第二RDL上的第三介电层。

22. 发明申请

US20080197469A1 Multi-chips package with reduced structure and method for forming the same 审中-公开
标题翻译：具有减少结构的多芯片封装和形成相同的方法
公开(公告)号：US20080197469A1
公开(公告)日：2008-08-21
申请号：US11708475
申请日：2007-02-21
申请人： Wen-Kun Yang , Hsien-Wen Hsu , Ya-Tzu Wu , Ching-Shun Huang
发明人： Wen-Kun Yang , Hsien-Wen Hsu , Ya-Tzu Wu , Ching-Shun Huang
IPC分类号： H01L23/48 , H01L21/00
CPC分类号： H01L25/0657 , H01L23/13 , H01L24/19 , H01L25/0652 , H01L25/50 , H01L2224/05001 , H01L2224/05026 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05548 , H01L2224/05644 , H01L2224/05666 , H01L2224/12105 , H01L2224/16145 , H01L2224/24227 , H01L2224/32225 , H01L2224/73267 , H01L2224/92244 , H01L2225/06513 , H01L2225/06524 , H01L2225/06527 , H01L2225/06541 , H01L2924/09701 , H01L2924/10253 , H01L2924/15153 , H01L2924/351 , H01L2924/00 , H01L2924/00014 , H01L2924/01029 , H01L2924/01079 , H01L2924/01055
摘要： The present invention provides a structure of multi-chips package and Method of the same comprising a substrate with a pre-formed die receiving cavity formed within an upper surface of the substrate. A die is disposed within the die receiving cavity by adhesion and an elastic dielectric layer filled into a gap between the die and the substrate to absorb thermal mechanical stress; therefore the thickness of the package is reduced and the CTE mismatch of the structure is reduced. The present invention also provides a structure for SIP with higher reliability and lower manufacturing cost. the process is simpler and it is easy to form the multi-chips package than the traditional one. Therefore, the present invention discloses a fan-out WLP with reduced thickness and good CTE matching performance.
摘要翻译：本发明提供了一种多芯片封装的结构及其方法，其包括在衬底的上表面内形成有预成型的模具容纳空腔的衬底。通过粘合将芯片设置在模具接收腔内，并且将弹性介电层填充到模具和基板之间的间隙中以吸收热机械应力; 因此，封装的厚度减小，结构的CTE失配减小。本发明还提供了具有更高可靠性和更低制造成本的SIP的结构。该过程更简单，并且比传统的更容易形成多芯片封装。因此，本发明公开了一种具有减小厚度和良好CTE匹配性能的扇出WLP。

23. 发明授权

US08308596B2 Transmission mechanism with intermittent output movement 有权
标题翻译：具有间歇输出运动的传动机构
公开(公告)号：US08308596B2
公开(公告)日：2012-11-13
申请号：US12606774
申请日：2009-10-27
申请人： Der-Min Tsay , Hsin-Pao Chen , Hsien-Wen Hsu , Chih-Wei Huang
发明人： Der-Min Tsay , Hsin-Pao Chen , Hsien-Wen Hsu , Chih-Wei Huang
IPC分类号： F16H35/02 , F16H37/12
CPC分类号： F16H37/12 , F16H35/02 , Y10T74/19186
摘要： A transmission mechanism with intermittent output movement includes an output shaft rotatably mounted to first and second cams and a sun gear mounted to the output shaft. A first rocker includes a first planet gear meshed with the sun gear and first and second rollers rotatably mounted on opposite sides of the first planet gear and respectively in contact with the first and second cams. A second rocker includes a second planet gear meshed with the sun gear. An end of a first connecting rod is mounted to the first rocker. An end of a second connecting rod is mounted to the second rocker. Two ends of a link are rotatably mounted to the other ends of the first and second connecting rods. A planet gear carrier is mounted to an input shaft coaxial to the input shaft and includes an end rotatably mounted to the first rocker.
摘要翻译：具有间歇输出运动的传动机构包括可旋转地安装到第一和第二凸轮的输出轴和安装到输出轴的太阳齿轮。第一摇杆包括与太阳齿轮啮合的第一行星齿轮和可旋转地安装在第一行星齿轮的相对侧上且分别与第一和第二凸轮接触的第一和第二辊。第二摇臂包括与太阳齿轮啮合的第二行星齿轮。第一连杆的端部安装在第一摇臂上。第二连杆的端部安装在第二摇臂上。连杆的两端可旋转地安装在第一和第二连杆的另一端上。行星齿轮架被安装到与输入轴同轴的输入轴上，并包括可旋转地安装到第一摇杆上的端部。

24. 发明申请

US20080084759A1 Nitride trapping memory device and method for reading the same 有权
标题翻译：氮化物捕获存储器件及其读取方法
公开(公告)号：US20080084759A1
公开(公告)日：2008-04-10
申请号：US11987240
申请日：2007-11-28
申请人： Chi-Ling Chu , Hsien-Wen Hsu , Jian-Yuan Shen
发明人： Chi-Ling Chu , Hsien-Wen Hsu , Jian-Yuan Shen
IPC分类号： G11C16/06
CPC分类号： G11C16/28 , G11C16/3418 , G11C16/3436
摘要： A nitride trapping memory device includes a comparator, a bias unit, a memory cell, a cycling cell, a compensation cell and a control unit. The comparator has a reference voltage. The bias unit is for outputting a bias voltage to the comparator, and the comparator outputs a bit value according to comparison of the bias voltage and the reference voltage. The memory cell is connected to the bias unit via a first switch. The cycling cell is connected to the bias unit via a second switch. The compensation cell is connected to the bias unit via a third switch. The control unit is for controlling the cycling cell and the compensation cell according to the bit value.
摘要翻译：氮化物捕获存储器件包括比较器，偏置单元，存储单元，循环单元，补偿单元和控制单元。比较器具有参考电压。偏置单元用于向比较器输出偏置电压，并且比较器根据偏置电压和参考电压的比较输出位值。存储单元经由第一开关连接到偏置单元。循环电池通过第二开关连接到偏置单元。补偿单元经由第三开关连接到偏置单元。控制单元用于根据位值控制循环单元和补偿单元。

25. 发明授权

US07262999B2 System and method for preventing read margin degradation for a memory array 有权
标题翻译：用于防止存储器阵列的读取容限劣化的系统和方法
公开(公告)号：US07262999B2
公开(公告)日：2007-08-28
申请号：US10997114
申请日：2004-11-24
申请人： Jian-Yuan Shen , Hsien-Wen Hsu , Chi-Ling Chu
发明人： Jian-Yuan Shen , Hsien-Wen Hsu , Chi-Ling Chu
IPC分类号： G11C16/06 , G11C16/04
CPC分类号： G11C16/349 , G11C16/0475
摘要： An ultra cycling nitride read only memory (NROM) device is coupled to a NROM array such that both bits of the ultra cycling NROM device will be erased when all NROM devices of the NROM array are erased. The ultra cycling NROM device is then programmed at its right bit. A threshold voltage difference will be obtained for the ultra cycling NROM device for the un-programmed left bit. Next, a cycling number is obtained based on the threshold voltage difference for the ultra cycling NROM device. A threshold voltage shift can be found based on the cycling number for the NROM array. Finally, an erase voltage will be calculated according to the threshold voltage shift for the NROM array. If the NROM array is programmed again, the erase voltage will be applied to un-programmed NROM devices of the NROM array to further reduce the threshold voltages.
摘要翻译：超循环氮化物只读存储器（NROM）器件耦合到NROM阵列，使得当NROM阵列的所有NROM器件被擦除时，超循环NROM器件的两个位将被擦除。然后在其右侧编程超循环NROM设备。对于非编程左位的超循环NROM器件，将获得阈值电压差。接下来，基于超循环NROM装置的阈值电压差来获得循环次数。可以基于NROM阵列的循环次数找到阈值电压偏移。最后，将根据NROM阵列的阈值电压偏移计算擦除电压。如果NROM阵列再次被编程，则擦除电压将被施加到NROM阵列的未编程的NROM器件，以进一步降低阈值电压。

26. 发明授权

US08269444B2 System and method for controlling sensorless motor 有权
标题翻译：用于控制无传感器电机的系统和方法
公开(公告)号：US08269444B2
公开(公告)日：2012-09-18
申请号：US12755414
申请日：2010-04-06
申请人： Chien-Chung Tseng , Hsien-Wen Hsu , Chien-Jen Hsieh
发明人： Chien-Chung Tseng , Hsien-Wen Hsu , Chien-Jen Hsieh
IPC分类号： H02P6/00 , H02P6/18
CPC分类号： H02P6/182
摘要： A system and a method for controlling a sensorless motor are disclosed, where the system includes a motor driver and a zero-crossing detector. The motor driver can drive the sensorless motor. The zero-crossing detector can detect a zero-crossing point when the voltage of one motor coil of the sensorless motor is in a blanking period.
摘要翻译：公开了一种用于控制无传感器电动机的系统和方法，其中系统包括电动机驱动器和过零检测器。电机驱动器可以驱动无传感器电机。当无传感器电机的一个电机线圈的电压处于消隐期间时，过零检测器可以检测过零点。

27. 发明授权

US06580287B2 Voltage-boosting generator for reducing effects due to operating voltage variation and temperature change 有权
标题翻译：电压升压发生器，用于减少由于工作电压变化和温度变化引起的影响
公开(公告)号：US06580287B2
公开(公告)日：2003-06-17
申请号：US10099806
申请日：2002-03-13
申请人： Hsien-Wen Hsu , Yu-Shen Lin , Chun-Hsiung Hung , Ho-Chun Liou
发明人： Hsien-Wen Hsu , Yu-Shen Lin , Chun-Hsiung Hung , Ho-Chun Liou
IPC分类号： H03K19003
CPC分类号： H02M3/07
摘要： A voltage-boosting generator for reducing the effects due to operating voltage variation and temperature change. The generator comprises a delay line circuit and a voltage boosting circuit. The delay line circuit is used to perform a time delay according to an initial boosting signal and to produce a control signal. The voltage boosting circuit is used to boosted voltage according to the control signal.
摘要翻译：一种电压升压发生器，用于降低由于工作电压变化和温度变化引起的影响。发电机包括延迟线电路和升压电路。延迟线电路用于根据初始升压信号执行时间延迟并产生控制信号。升压电路根据控制信号用于升压。

28. 发明授权

US08310190B2 Apparatus and method for detecting lock error in sensorless motor 有权
标题翻译：无传感器电机锁定误差检测装置及方法
公开(公告)号：US08310190B2
公开(公告)日：2012-11-13
申请号：US12843845
申请日：2010-07-26
申请人： Hsien-Wen Hsu
发明人： Hsien-Wen Hsu
IPC分类号： H02P6/00
CPC分类号： H02P29/0241
摘要： An apparatus and a method for detecting a lock error in a sensorless motor are disclosed, where the apparatus includes a multiplexer, a negative booster, a comparator and a timer. The multiplexer can receive a coil voltage from the sensorless motor. The negative booster can receive a neutralizing voltage from the sensorless motor and drop the neutralizing voltage. The comparator can compare the coil voltage with the dropped neutralizing voltage for outputting a zero-crossing signal. The timer can count time duration during the zero-crossing signal maintained at the a logic level and determine the lock error in the sensorless motor when the time duration exceeds a predetermined period.
摘要翻译：公开了一种用于检测无传感器电动机中的锁定错误的装置和方法，其中该装置包括多路复用器，负增强器，比较器和定时器。多路复用器可以从无传感器电机接收线圈电压。负增强器可以从无传感器电机接收中和电压并降低中和电压。比较器可以将线圈电压与降低的中和电压进行比较，以输出过零信号。定时器可以计算保持在逻辑电平的过零信号期间的持续时间，并且当持续时间超过预定周期时，确定无传感器电动机中的锁定错误。

29. 发明授权

US08188700B2 Apparatus and method for driving sensorless motor 有权
标题翻译：用于驱动无传感器电机的装置和方法
公开(公告)号：US08188700B2
公开(公告)日：2012-05-29
申请号：US12560442
申请日：2009-09-16
申请人： Chien-Chung Tseng , Hsien-Wen Hsu , Chien-Jen Hsieh
发明人： Chien-Chung Tseng , Hsien-Wen Hsu , Chien-Jen Hsieh
IPC分类号： H02P1/46
CPC分类号： H02P6/08 , H02P6/18 , H02P6/21
摘要： An apparatus and a method for driving a sensorless motor are described and shown in the specification and drawings, where the method includes steps as follows. First, a control signal is acquired, where the control signal has information of a predetermined rotational speed. Next, energy is supplied and progressively increased to the sensorless motor, so as to rotate a rotor of the sensorless motor. Then, a position of the rotor is detected. Finally, the energy is gradually regulated so that the sensorless motor is maintained at the predetermined rotational speed.
摘要翻译：在说明书和附图中描述和示出了用于驱动无传感器电动机的装置和方法，其中该方法包括以下步骤。首先，获取控制信号，其中控制信号具有预定旋转速度的信息。接下来，向无传感器电动机提供能量并逐渐增加，以便使无传感器电动机的转子旋转。然后，检测转子的位置。最后，能量被逐渐调节，使得无传感器电动机保持在预定转速。

30. 发明授权

US07746148B2 High-side driver 有权
标题翻译：高侧司机
公开(公告)号：US07746148B2
公开(公告)日：2010-06-29
申请号：US12324843
申请日：2008-11-27
申请人： Hsien-Wen Hsu
发明人： Hsien-Wen Hsu
IPC分类号： H03L5/00
CPC分类号： H03K17/6877 , H03K17/161 , H03K19/017545
摘要： A high-side driving circuit is provided, where Q terminal and Q terminal of the latch circuit respectively feed back to the first switch and the second switch, which may control asymmetric impedance, such that the high-side driving circuit can prevent noise.
摘要翻译：提供了一种高侧驱动电路，其中锁存电路的Q端子和Q端子分别反馈到第一开关和第二开关，这可以控制非对称阻抗，使得高侧驱动电路可以防止噪声。

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