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21. 发明申请

US20100098851A1 TECHNIQUES FOR ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：原子层沉积技术
公开(公告)号：US20100098851A1
公开(公告)日：2010-04-22
申请号：US12254496
申请日：2008-10-20
申请人： Shigemi MURAKAWA , Vikram Singh , George Papasouliotis , Joseph C. Olson , Paul J. Murphy , Gary E. Dickerson
发明人： Shigemi MURAKAWA , Vikram Singh , George Papasouliotis , Joseph C. Olson , Paul J. Murphy , Gary E. Dickerson
IPC分类号： C23C16/44 , C23C16/54
CPC分类号： C23C16/45544
摘要： Techniques for atomic layer deposition (ALD) are disclosed. In one particular exemplary embodiment, the techniques may be realized as a system for ALD comprising a plurality of reactors in a stacked configuration, wherein each reactor comprises a wafer holding portion for holding a target wafer, a gas assembly coupled to the plurality of reactors and configured to provide at least one gas to at least one of the plurality of reactors, and an exhaust assembly coupled to the plurality of reactors and configured to exhaust the at least one gas from the at least one of the plurality of reactors. The gas assembly may further comprise a valve assembly coupled to each of the first gas inlet, the second gas inlet, and the third gas inlet, where the valve assembly is configured to selectively release at least one of the first gas, the second gas, and the third gas.
摘要翻译：公开了原子层沉积技术（ALD）。在一个特定的示例性实施例中，这些技术可以被实现为包括堆叠配置中的多个反应器的ALD系统，其中每个反应器包括用于保持目标晶片的晶片保持部分，耦合到多个反应器的气体组件，被配置为向所述多个反应器中的至少一个提供至少一个气体，以及联接到所述多个反应器并被配置为从所述多个反应器中的所述至少一个反应器排出所述至少一种气体的排气组件。气体组件还可以包括联接到第一气体入口，第二气体入口和第三气体入口中的每一个的阀组件，其中阀组件构造成选择性地释放第一气体，第二气体，和第三气体。

22. 发明申请

US20090266107A1 Integrated Controlled Freeze Zone (CFZ) Tower and Dividing Wall (DWC) for Enhanced Hydrocarbon Recovery 有权
标题翻译：集成控制冷冻区（CFZ）塔和分隔墙（DWC），用于增强烃回收
公开(公告)号：US20090266107A1
公开(公告)日：2009-10-29
申请号：US12518866
申请日：2007-11-20
申请人： Vikram Singh , Edward J. Grave , Paul Scott Northrop , Narasimhan Sundaram
发明人： Vikram Singh , Edward J. Grave , Paul Scott Northrop , Narasimhan Sundaram
IPC分类号： F25J3/00
CPC分类号： B01D3/166 , B01D3/14 , B01D3/141 , F25J3/0209 , F25J3/0233 , F25J3/0238 , F25J3/0266 , F25J2200/02 , F25J2200/50 , F25J2200/74 , F25J2200/96 , F25J2205/20 , F25J2205/40 , F25J2205/60 , F25J2205/80 , F25J2220/66 , F25J2240/40 , F25J2270/12 , F25J2280/40 , Y02C10/12
摘要： The present invention relates to methods and apparatuses for the operation of a distillation tower containing a controlled freezing zone and at least one distillation section. The process and tower design are utilized for the additional recovery of hydrocarbons from an acid gas. In this process, a separation process is utilized in which a multi-component feedstream is introduced into an apparatus that operates under solids forming conditions for at least one of the feedstream components. The freezable component, although typically CO2, H2S, or another acid gas, can be any component that has the potential for forming solids in the separation system. A dividing wall is added to at least a portion of the lower distillation section of the apparatus to effect the separation of at least some fraction of the hydrocarbons in that portion of the tower.
摘要翻译：本发明涉及用于操作含有受控冷冻区和至少一个蒸馏段的蒸馏塔的方法和设备。工艺和塔架设计用于从酸性气体中再次回收碳氢化合物。在该方法中，使用分离方法，其中将多组分进料流引入到在至少一种进料流组分的固体形成条件下操作的装置中。可冷冻组分虽然通常为CO 2，H 2 S或另一种酸性气体，但可以是在分离系统中具有形成固体的潜力的任何组分。将分隔壁加入到装置的低级蒸馏段的至少一部分中以在塔的该部分中分离至少一部分烃。

23. 发明申请

US20090061605A1 PROFILE ADJUSTMENT IN PLASMA ION IMPLANTER 有权
标题翻译：等离子体植入物的轮廓调整
公开(公告)号：US20090061605A1
公开(公告)日：2009-03-05
申请号：US12267193
申请日：2008-11-07
申请人： Ludovic GODET , George D. Papasouliotis , Ziwei Fang , Richard Appel , Vincent Deno , Vikram Singh , Harold M. Persing
发明人： Ludovic GODET , George D. Papasouliotis , Ziwei Fang , Richard Appel , Vincent Deno , Vikram Singh , Harold M. Persing
IPC分类号： H01L21/265
CPC分类号： H01J37/3171 , H01J37/32412 , H01J37/32935 , H01J2237/31705 , H01L21/2236
摘要： A method to provide a dopant profile adjustment solution in plasma doping systems for meeting both concentration and junction depth requirements. Bias ramping and bias ramp rate adjusting may be performed to achieve a desired dopant profile so that surface peak dopant profiles and retrograde dopant profiles are realized. The method may include an amorphization step in one embodiment.
摘要翻译：在等离子体掺杂系统中提供掺杂剂分布调整溶液以满足浓度和结深度要求的方法。可以执行偏置斜坡调整和偏置斜率调整以实现期望的掺杂剂分布，从而实现表面峰值掺杂剂分布和逆向掺杂剂分布。该方法可以包括在一个实施方案中的非晶化步骤。

24. 发明申请

US20080075880A1 Non-doping implantation process utilizing a plasma ion implantation system 审中-公开
标题翻译：利用等离子体离子注入系统的非掺杂注入工艺
公开(公告)号：US20080075880A1
公开(公告)日：2008-03-27
申请号：US11527158
申请日：2006-09-26
申请人： Anthony Renau , Vikram Singh
发明人： Anthony Renau , Vikram Singh
IPC分类号： C23C14/00
CPC分类号： H01L21/2236 , H01L21/265
摘要： Non-doping implantation process utilizing a plasma ion implantation system. A plasma ion implantation system is used to perform a non-doping implantation process such as a pre-amorphization implantation process or a strain altering implantation. Use of the plasma ion implantation system to perform a non-doping implantation process results in higher throughput and is conducive to sequential ion implantation processing.
摘要翻译：利用等离子体离子注入系统的非掺杂注入工艺。等离子体离子注入系统用于执行非掺杂注入工艺，例如预非晶化注入工艺或应变改变注入。使用等离子体离子注入系统执行非掺杂注入工艺导致更高的生产量并且有助于顺序离子注入处理。

25. 发明申请

US20070065576A1 Technique for atomic layer deposition 审中-公开
标题翻译：原子层沉积技术
公开(公告)号：US20070065576A1
公开(公告)日：2007-03-22
申请号：US11221710
申请日：2005-09-09
申请人： Vikram Singh , Harold Persing , Edmund Winder , Jeffrey Hopwood , Anthony Renau
发明人： Vikram Singh , Harold Persing , Edmund Winder , Jeffrey Hopwood , Anthony Renau
IPC分类号： C23C16/00
CPC分类号： C23C16/45546 , C23C16/452 , C23C16/4554 , C23C16/45544
摘要： A technique for atomic layer deposition is disclosed. In one particular exemplary embodiment, the technique may be realized by an apparatus for atomic layer deposition. The apparatus may comprise a process chamber having a substrate platform to hold at least one substrate. The apparatus may also comprise a supply of a precursor substance, wherein the precursor substance comprises atoms of at least one first species and atoms of at least one second species, and wherein the supply provides the precursor substance to saturate a surface of the at least one substrate. The apparatus may further comprise a plasma source of metastable atoms of at least one third species, wherein the metabstable atoms are capable of desorbing the atoms of the at least one second species from the saturated surface of the at least one substrate to form one or more atomic layers of the at least one first species.
摘要翻译：公开了一种用于原子层沉积的技术。在一个特定的示例性实施例中，该技术可以通过用于原子层沉积的装置来实现。该装置可以包括具有用于保持至少一个基板的基板平台的处理室。该装置还可以包括前体物质的供应，其中所述前体物质包含至少一种第一种类的原子和至少一种第二物质的原子，并且其中所述供应提供所述前体物质以饱和所述至少一种基质。该装置可以进一步包含至少一种第三种类的亚稳态原子的等离子体源，其中可重构原子能够从至少一种底物的饱和表面解吸所述至少一种第二种类的原子以形成一种或多种所述至少一种第一种类的原子层。

26. 发明申请

US20060236931A1 Tilted Plasma Doping 审中-公开
标题翻译：倾斜等离子体兴奋剂
公开(公告)号：US20060236931A1
公开(公告)日：2006-10-26
申请号：US10908009
申请日：2005-04-25
申请人： Vikram Singh , James Buff , Rajesh Dorai
发明人： Vikram Singh , James Buff , Rajesh Dorai
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01J37/32412 , C23C14/48 , H01J37/32009 , H01J37/32752
摘要： A plasma doping apparatus includes a chamber and a plasma source that generates ions in the chamber from a dopant gas. A grating is positioned in the chamber. A platen for supporting a target is positioned in the chamber. At least one of the grating and the target are oriented so that dopant ions extracted from the grating impact the target at a non-normal angle of incidence.
摘要翻译：等离子体掺杂装置包括腔室和等离子体源，其在腔室中从掺杂气体产生离子。光栅位于腔室中。用于支撑靶的压板位于腔室中。光栅和靶中的至少一个被定向成使得从光栅提取的掺杂离子以非正常的入射角撞击靶。

27. 发明授权

US06787483B1 Gap fill for high aspect ratio structures 有权
标题翻译：间隙填充高纵横比结构
公开(公告)号：US06787483B1
公开(公告)日：2004-09-07
申请号：US10442846
申请日：2003-05-20
申请人： Atiye Bayman , Md Sazzadur Rahman , Weijie Zhang , Bart van Schravendijk , Vishal Gauri , George D. Papasoulitotis , Vikram Singh
发明人： Atiye Bayman , Md Sazzadur Rahman , Weijie Zhang , Bart van Schravendijk , Vishal Gauri , George D. Papasoulitotis , Vikram Singh
IPC分类号： H01L2131
CPC分类号： H01L21/02129 , C23C16/045 , C23C16/402 , H01J2237/3327 , H01L21/02131 , H01L21/0214 , H01L21/02164 , H01L21/02274 , H01L21/3144 , H01L21/3145 , H01L21/31608 , H01L21/31625 , H01L21/31629 , H01L21/76224
摘要： Chemical vapor deposition processes are employed to fill high aspect ratio (typically at least 3:1), narrow width (typically 1.5 microns or less and even sub 0.15 micron) gaps with significantly reduced incidence of voids or weak spots. This deposition process involves the use of hydrogen as a process gas in the reactive mixture of a plasma containing CVD reactor. The process gas also includes dielectric forming precursor molecules such as silicon and oxygen containing molecules.
摘要翻译：使用化学气相沉积方法来填充高纵横比（通常至少3:1），窄宽度（通常为1.5微米或更小甚至0.15微米以下）间隙，空隙或弱点的发生率显着降低。该沉积工艺涉及在含等离子体CVD反应器的反应混合物中使用氢作为工艺气体。工艺气体还包括电介质形成前体分子，例如硅和含氧分子。

28. 植物专利

USPP13110P2 Lippia alba plant named ‘Bhurakshak’ 有权
标题翻译： Lippia alba植物命名为“Bhurakshak”
公开(公告)号：USPP13110P2
公开(公告)日：2002-10-22
申请号：US09538341
申请日：2000-03-29
申请人： Sushil Kumar , Janak Raj Bahl , Ravi Prakash Bansal , Shri Niwas Garg , Arif Ali Naqvi , Suman Preet Singh Khanuja , Ajit Kumar Shasany , Mahendra Pandurang Darokar , Vikram Singh , Sweta Sinha
发明人： Sushil Kumar , Janak Raj Bahl , Ravi Prakash Bansal , Shri Niwas Garg , Arif Ali Naqvi , Suman Preet Singh Khanuja , Ajit Kumar Shasany , Mahendra Pandurang Darokar , Vikram Singh , Sweta Sinha
IPC分类号： A01H500
CPC分类号： A01H5/02
摘要： A new and distinct mutant plant of Lippia alba called ‘Bhurakshak,’ characterized by novel aroma of the oil constituting 7.2% 1, 8 cineole, 42.3% linalool, 12.9% citral (b) and 14.2% citral (a) as a major terpenoids, and having a unique RAPD profile as shown in FIG. 1 of the drawings.
摘要翻译：一种新的和不同的Lippia alba的突变植物称为“Bhurakshak”，其特征在于油的新颖香气构成主要萜类化合物的7.2％1,8Cineole，42.3％芳樟醇，12.9％柠檬醛（b）和14.2％柠檬醛（a）并且具有如图1所示的唯一RAPD轮廓。

29. 发明授权

US09266035B2 Distillation tower feed device 有权
标题翻译：蒸馏塔进料装置
公开(公告)号：US09266035B2
公开(公告)日：2016-02-23
申请号：US13950870
申请日：2013-07-25
申请人： Vikram Singh , Brian D. Albert , Berne K. Stober
发明人： Vikram Singh , Brian D. Albert , Berne K. Stober
IPC分类号： B01D3/00 , B01D3/06 , B01J4/00 , B01F3/04 , B01D3/30
CPC分类号： B01D3/008 , B01D3/06 , B01D3/30 , B01F3/04 , B01J4/00
摘要： A feed device for a distillation tower has an annular, open-bottomed channel located around the periphery of the feed zone of the tower with an inner wall spaced from the inner curved wall of the tower and a top covering the channel to confer a generally inverted-U shape to the cross section of the channel. One or more tangential feed inlets are provided to admit a heated, mixed phase feed to the tower and direct the feed into and along the channel. One or more vapor scoops are provided for each feed inlet with the scoop(s) located on the inner wall of the channel at a sufficient distance along the channel from the inlet to permit cyclonic separation of vapor and liquid before the vapor in the feed from the inlet enters the scoop(s) and passes through a vapor exit port into the central core of the tower.
摘要翻译：用于蒸馏塔的进料装置具有环形的开口底部通道，其围绕塔的进料区的周边设置有内壁，该内壁与塔的内弯曲壁间隔开，顶部覆盖通道以赋予通常倒置的 -U形状到通道的横截面。提供一个或多个切向进料入口以允许加热的混合相进料到塔中并将进料引导入和沿通道。为每个进料入口提供一个或多个蒸气勺，其中勺位于通道的内壁上，距离入口的通道足够的距离处，以允许蒸气和液体在进料中的蒸汽之前气旋分离，入口进入勺子并通过蒸汽出口进入塔的中心核心。

30. 发明申请

US20150128543A1 MIST ELIMINATOR CONFIGURATION FOR DROPLET REMOVAL IN FOULING SERVICE 有权
标题翻译： MIST消除器配置在卸载服务中删除
公开(公告)号：US20150128543A1
公开(公告)日：2015-05-14
申请号：US14323231
申请日：2014-07-03
申请人： Robert Piszczek , Todd P. Marut , Brian D. Albert , Vikram Singh , Simon Y. Yeung
发明人： Robert Piszczek , Todd P. Marut , Brian D. Albert , Vikram Singh , Simon Y. Yeung
IPC分类号： B01D45/08
CPC分类号： B01D45/08 , B01D45/04 , B01D45/16 , B01D50/002 , F01M13/04 , F01M2013/0433
摘要： Vane type mist eliminator segments are arranged in a plurality of tiers at separate vertically spaced locations in a tower, typically of the upright, cylindrical type, with the eliminator at each tier covering only a portion of the cross section of the tower. The eliminator segment(s) in each tier are laterally displaced in the tower from the adjacent vertically spaced eliminator segments to form a staggered configuration for the segments. Each mist eliminator preferably extends over 50-70% of the cross-sectional area of the tower to leave an open flow passage in the tier; the staggering of the segments and the associated flow passages defines an upward tortuous or zig-zag open flow path for vapors ascending the tower through the open flow passages when the eliminator segment(s) become fouled in use.
摘要翻译：叶片式除雾器段在塔中的分开的垂直间隔的位置处布置成多个层，通常为直立的圆柱形，每层的消除器仅覆盖塔的横截面的一部分。每个层中的消除器段在塔中从相邻的垂直间隔的消除器段横向移位，以形成用于段的交错构造。每个除雾器优选地延伸超过塔的横截面面积的50-70％以在层中留下开放的流动通道; 段和相关联的流动通道的交错限定了当消除器段在使用中被弄脏时，向上弯曲或向上弯曲的开口流动路径，用于通过开放流动通道升高塔的蒸气。

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