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21. 外观设计

USD571958S1 Electric shaver 有权
标题翻译：电动剃须刀
公开(公告)号：USD571958S1
公开(公告)日：2008-06-24
申请号：US29292223
申请日：2007-10-03
申请人： Tsuyoshi Nishizawa
设计人： Tsuyoshi Nishizawa

22. 发明申请

US20060201413A1 Method for producing silicon epitaxial wafer and silicon epitaxial wafer 有权
标题翻译：硅外延晶片和硅外延晶片的制造方法
公开(公告)号：US20060201413A1
公开(公告)日：2006-09-14
申请号：US10561957
申请日：2004-06-21
申请人： Tsuyoshi Nishizawa
发明人： Tsuyoshi Nishizawa
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： H01L21/02658 , C30B23/002 , C30B25/02 , C30B25/12 , C30B25/16 , C30B29/06 , H01L21/02381 , H01L21/02532
摘要： It is to provide a method for producing a silicon epitaxial wafer, which can prevent fine unevenness from occurring on a rear main surface of a silicon epitaxial wafer and which suppresses the haze level of the whole rear main surface to 50 ppm or less. A method for producing a silicon epitaxial wafer, includes: a hydrogen heat treatment step of arranging within a reactor a susceptor capable of mounting a silicon single crystal substrate and subjecting the silicon single crystal substrate mounted on the susceptor to heat treatment in a hydrogen atmosphere, and a vapor phase epitaxy step of epitaxially growing a silicon epitaxial layer after the hydrogen heat treatment step, wherein the silicon single crystal substrate is separated from the susceptor during the hydrogen heat treatment step, and the silicon single crystal substrate is mounted on the susceptor during the vapor phase epitaxy step.
摘要翻译：提供一种制造硅外延晶片的方法，其可以防止在硅外延晶片的后主表面上发生微细凹凸，并且将整个后主表面的雾度水平抑制在50ppm以下。一种硅外延晶片的制造方法，其特征在于，包括：氢处理工序，在反应器内配置能够安装硅单晶基板的基座，对安装在所述基座上的所述硅单晶基板在氢气氛中进行热处理，以及在所述氢热处理工序之后外延生长硅外延层的气相外延工序，在所述氢热处理工序中，所述硅单晶基板与所述基座分离，所述硅单晶基板安装在所述基座上气相外延步骤。