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21. 发明申请

US20160190329A1 FIELD-EFFECT TRANSISTOR AND METHOD FOR PRODUCING FIELD-EFFECT TRANSISTOR 审中-公开
标题翻译：场效应晶体管和产生场效应晶体管的方法
公开(公告)号：US20160190329A1
公开(公告)日：2016-06-30
申请号：US14908599
申请日：2014-07-25
申请人： Shinji MATSUMOTO , Naoyuki UEDA , Yuki NAKAMURA , Mikiko TAKADA , Yuji SONE , Ryoichi SAOTOME , Sadanori ARAE , Yukiko ABE
发明人： Shinji MATSUMOTO , Naoyuki UEDA , Yuki NAKAMURA , Mikiko TAKADA , Yuji SONE , Ryoichi SAOTOME , Sadanori ARAE , Yukiko ABE
IPC分类号： H01L29/786 , H01L27/12 , G09G3/20 , H01L29/423 , H01L29/49 , H01L29/66 , H01L29/417
CPC分类号： H01L29/7869 , G09G3/2092 , H01L27/1225 , H01L29/41733 , H01L29/42384 , H01L29/45 , H01L29/4908 , H01L29/66969 , H01L29/78696
摘要： To provide a field-effect transistor, containing: a gate electrode configured to apply gate voltage; a source electrode and a drain electrode, both of which are configured to take out electric current; an active layer formed of a n-type oxide semiconductor, provided in contact with the source electrode and the drain electrode; and a gate insulating layer provided between the gate electrode and the active layer, wherein work function of the source electrode and drain electrode is 4.90 eV or greater, and wherein an electron carrier density of the n-type oxide semiconductor is 4.0×1017 cm−3 or greater.
摘要翻译：提供一种场效应晶体管，包括：施加栅极电压的栅电极; 源电极和漏电极，两者都被构造成取出电流; 由n型氧化物半导体形成的有源层设置成与源电极和漏电极接触; 以及栅极绝缘层，设置在所述栅电极和所述有源层之间，所述源电极和漏电极的功函数为4.90eV以上，并且其中所述n型氧化物半导体的电子载流子密度为4.0×10 17 cm -3， 3以上。

22. 发明申请

US20210043679A1 INORGANIC EL ELEMENT, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE, AND SYSTEM 有权
公开(公告)号：US20210043679A1
公开(公告)日：2021-02-11
申请号：US16981933
申请日：2019-03-13
申请人： Naoyuki UEDA , Yuki NAKAMURA , Yukiko ABE , Shinji MATSUMOTO , Yuji SONE , Ryoichi SAOTOME , Sadanori ARAE , Minehide KUSAYANAGI , Yuichi ANDO
发明人： Naoyuki UEDA , Yuki NAKAMURA , Yukiko ABE , Shinji MATSUMOTO , Yuji SONE , Ryoichi SAOTOME , Sadanori ARAE , Minehide KUSAYANAGI , Yuichi ANDO
IPC分类号： H01L27/15 , H01L33/26 , H01L33/18 , G09G3/32
摘要： An inorganic EL element including: an anode; a hole transporting layer; a light emitting layer; an electron transporting layer; and a cathode, the anode, the hole transporting layer, the light emitting layer, the electron transporting layer, and the cathode being stacked, wherein the hole transporting layer is an oxide film, the light emitting layer is an oxide film, and the electron transporting layer is an oxide film.

23. 发明申请

US20200176588A1 SPUTTERING TARGET FOR INSULATING OXIDE FILM, METHOD FOR FORMING INSULATING OXIDE FILM, AND METHOD FOR PRODUCING FIELD-EFFECT TRANSISTOR 审中-公开
公开(公告)号：US20200176588A1
公开(公告)日：2020-06-04
申请号：US16697770
申请日：2019-11-27
申请人： Yukiko ABE , Yuki NAKAMURA , Shinji MATSUMOTO , Yuji SONE , Naoyuki UEDA , Ryoichi SAOTOME , Minehide KUSAYANAGI
发明人： Yukiko ABE , Yuki NAKAMURA , Shinji MATSUMOTO , Yuji SONE , Naoyuki UEDA , Ryoichi SAOTOME , Minehide KUSAYANAGI
IPC分类号： H01L29/66 , H01L21/02 , C23C14/34
摘要： A sputtering target for an insulating oxide film, the sputtering target including a sintered body including a lanthanum oxide and at least one selected from the group consisting of a beryllium oxide, a magnesium oxide, a calcium oxide, a strontium oxide, and a barium oxide, wherein lanthanum has highest molar ratio among elements other than oxygen contained in the sintered body.

24. 发明申请

US20200027961A1 METAL OXIDE, FIELD-EFFECT TRANSISTOR, AND METHOD FOR PRODUCING THE SAME 审中-公开
公开(公告)号：US20200027961A1
公开(公告)日：2020-01-23
申请号：US16518265
申请日：2019-07-22
申请人： Minehide KUSAYANAGI , Naoyuki UEDA , Yuki NAKAMURA , Yukiko ABE , Shinji MATSUMOTO , Yuji SONE , Ryoichi SAOTOME , Sadanori ARAE
发明人： Minehide KUSAYANAGI , Naoyuki UEDA , Yuki NAKAMURA , Yukiko ABE , Shinji MATSUMOTO , Yuji SONE , Ryoichi SAOTOME , Sadanori ARAE
IPC分类号： H01L29/51 , H01L29/786 , H01L29/66 , H01L21/4757 , H01L21/4763
摘要： Method for producing field-effect transistor including source electrode and drain electrode, gate electrode, active layer, and gate insulating layer, the method including etching the gate insulating layer, wherein the gate insulating layer is metal oxide including A-element and at least one selected from B-element and C-element, the A-element is at least one selected from Sc, Y, Ln (lanthanoid), Sb, Bi, and Te, the B-element is at least one selected from Ga, Ti, Zr, and Hf, the C-element is at least one selected from Group 2 elements in periodic table, etching solution A is used when at least one selected from the source electrode and the drain electrode, the gate electrode, and the active layer is formed, and etching solution B that is etching solution having same type as the etching solution A is used when the gate insulating layer is etched.

25. 发明申请

US20190148168A1 METHOD FOR MANUFACTURING A FIELD-EFFECT TRANSISTOR 审中-公开
公开(公告)号：US20190148168A1
公开(公告)日：2019-05-16
申请号：US16232611
申请日：2018-12-26
申请人： Minehide KUSAYANAGI , Naoyuki UEDA , Yuki NAKAMURA , Yukiko ABE , Shinji MATSUMOTO , Yuji SONE , Ryoichi SAOTOME , Sadanori ARAE
发明人： Minehide KUSAYANAGI , Naoyuki UEDA , Yuki NAKAMURA , Yukiko ABE , Shinji MATSUMOTO , Yuji SONE , Ryoichi SAOTOME , Sadanori ARAE
IPC分类号： H01L21/44 , H01L29/24 , H01L29/66 , H01L21/477 , H01L29/786 , H01L29/45
摘要： A method for manufacturing a field-effect transistor includes forming an active layer of an oxide semiconductor, forming a conducting film to cover the active layer, patterning the conducting film through an etching process using an etchant to form a source electrode and a drain electrode, and performing, at least before the patterning the conducting film, a treatment on the active layer so that an etching rate of the active layer is less than an etching rate of the conducting film.

26. 发明申请

US20170162704A1 FIELD-EFFECT TRANSISTOR, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE, AND SYSTEM 审中-公开
公开(公告)号：US20170162704A1
公开(公告)日：2017-06-08
申请号：US15370392
申请日：2016-12-06
申请人： Yukiko ABE , Naoyuki UEDA , Shinji MATSUMOTO , Ryoichi SAOTOME , Yuki NAKAMURA , Yuji SONE , Sadanori ARAE , Minehide KUSAYANAGI
发明人： Yukiko ABE , Naoyuki UEDA , Shinji MATSUMOTO , Ryoichi SAOTOME , Yuki NAKAMURA , Yuji SONE , Sadanori ARAE , Minehide KUSAYANAGI
IPC分类号： H01L29/786 , H01L29/24 , G09G3/3225 , G02F1/1368 , G09G3/36 , G02F1/1362 , H01L29/51 , H01L27/12
CPC分类号： H01L29/78609 , G02F1/1368 , G09G3/006 , G09G3/3225 , G09G3/3648 , G09G2300/0404 , H01L27/1225 , H01L27/124 , H01L27/3262 , H01L29/24 , H01L29/4908 , H01L29/517 , H01L29/7869 , H01L29/78696 , H01L2251/533
摘要： A field-effect transistor including: a gate electrode, which is configured to apply gate voltage; a source electrode and a drain electrode, which are configured to take electric current out; an active layer, which is disposed to be adjacent to the source electrode and the drain electrode and is formed of an oxide semiconductor; and a gate insulating layer, which is disposed between the gate electrode and the active layer, wherein the gate insulating layer contains a paraelectric amorphous oxide containing a Group A element which is an alkaline earth metal and a Group B element which is at least one selected from the group consisting of Ga, Sc, Y, and lanthanoid, and wherein the active layer has a carrier density of 4.0×1017/cm3 or more.

27. 发明申请

US20170141237A1 FIELD-EFFECT TRANSISTOR, DISPLAY ELEMENT, DISPLAY, SYSTEM, AND METHOD OF MANUFACTURING FIELD-EFFECTIVE TRANSISTOR 审中-公开
公开(公告)号：US20170141237A1
公开(公告)日：2017-05-18
申请号：US15349211
申请日：2016-11-11
申请人： Sadanori ARAE , Naoyuki UEDA , Yuki NAKAMURA , Yukiko ABE , Shinji MATSUMOTO , Yuji SONE , Ryoichi SAOTOME , Minehide KUSAYANAGI
发明人： Sadanori ARAE , Naoyuki UEDA , Yuki NAKAMURA , Yukiko ABE , Shinji MATSUMOTO , Yuji SONE , Ryoichi SAOTOME , Minehide KUSAYANAGI
IPC分类号： H01L29/786 , H01L21/4757 , H01L21/02 , H01L21/4763 , H01L27/12 , H01L29/66
CPC分类号： H01L29/78606 , G02F1/1368 , H01L21/02142 , H01L21/47573 , H01L21/47635 , H01L27/1225 , H01L27/124 , H01L27/3262 , H01L29/66969 , H01L29/7869
摘要： A field-effect transistor includes a gate electrode, a source electrode and a drain electrode to take out electric current according to an application of a voltage to the gate electrode, a semiconductor layer disposed adjacent to the source electrode and the drain electrode, the semiconductor layer forming a channel between the source electrode and the drain electrode, a first insulating layer as gate insulating film disposed between the semiconductor layer and the gate electrode, and a second insulating layer covering at least a part of a surface of the semiconductor layer, the second insulating layer including an oxide including silicon and alkaline earth metal.

28. 发明申请

US20160267873A1 FIELD-EFFECT TRANSISTOR, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE, AND SYSTEM 有权
标题翻译：场效应晶体管，显示元件，图像显示装置和系统
公开(公告)号：US20160267873A1
公开(公告)日：2016-09-15
申请号：US15032192
申请日：2014-10-23
申请人： Ryoichi SAOTOME , Naoyuki UEDA , Yuki NAKAMURA , Yukiko ABE , Shinji MATSUMOTO , Yuji SONE , Sadanori ARAE
发明人： Ryoichi SAOTOME , Naoyuki UEDA , Yuki NAKAMURA , Yukiko ABE , Shinji MATSUMOTO , Yuji SONE , Sadanori ARAE
IPC分类号： G09G3/36 , H01L29/786 , H01L27/12
CPC分类号： G09G3/3696 , G09G3/3677 , G09G3/3688 , G09G2300/0809 , G09G2300/0842 , G09G2310/0278 , H01L27/1225 , H01L27/1248 , H01L27/3244 , H01L29/7869
摘要： A field-effect transistor, including: a base; a passivation layer; a gate insulating layer formed therebetween; a source electrode and a drain electrode, which are formed to be in contact with the gate insulating layer; a semiconductor layer, which is formed between at least the source electrode and the drain electrode, and is in contact with the gate insulating layer, the source electrode, and the drain electrode; and a gate electrode, which is in contact with the gate insulating layer, and faces the semiconductor layer via the gate insulating layer, wherein the passivation layer contains a first passivation layer, which contains a first composite metal oxide containing Si, and an alkaline earth metal, and a second passivation layer, which is formed to be in contact with the first passivation layer, and contains a second composite metal oxide containing an alkaline earth metal, and a rare-earth element.
摘要翻译：一种场效应晶体管，包括：基极; 钝化层; 在它们之间形成栅极绝缘层; 源极电极和漏极电极，其形成为与栅极绝缘层接触; 至少形成在所述源极电极和所述漏极电极之间并与所述栅极绝缘层，所述源极电极和所述漏极电极接触的半导体层; 以及与所述栅极绝缘层接触并且经由所述栅极绝缘层面向所述半导体层的栅电极，其中所述钝化层包含含有含有Si的第一复合金属氧化物的第一钝化层和碱土金属金属和第二钝化层，其形成为与第一钝化层接触，并且包含含有碱土金属的第二复合金属氧化物和稀土元素。

29. 发明申请

US20160042947A1 COATING LIQUID FOR FORMING METAL OXIDE FILM, METAL OXIDE FILM, FIELD-EFFECT TRANSISTOR, AND METHOD FOR PRODUCING FIELD-EFFECT TRANSISTOR 有权
标题翻译：用于形成金属氧化物膜，金属氧化物膜的涂覆液体，场效应晶体管和用于产生场效应晶体管的方法
公开(公告)号：US20160042947A1
公开(公告)日：2016-02-11
申请号：US14780190
申请日：2014-03-26
申请人： Yuki NAKAMURA , Naoyuki UEDA , Shinji MATSUMOTO , Mikiko TAKADA , Yuji SONE , Ryoichi SAOTOME , Sadanori ARAE , Yukiko ABE
发明人： Yuki NAKAMURA , Naoyuki UEDA , Shinji MATSUMOTO , Mikiko TAKADA , Yuji SONE , Ryoichi SAOTOME , Sadanori ARAE , Yukiko ABE
IPC分类号： H01L21/02 , H01L29/24 , H01L29/66 , C09D5/24 , H01L29/786
CPC分类号： H01L21/02628 , C09D1/00 , C09D5/24 , H01L21/02565 , H01L29/24 , H01L29/66969 , H01L29/7869
摘要： To provide a coating liquid for forming a metal oxide film, containing: an indium compound; at least one selected from the group consisting of a magnesium compound, a calcium compound, a strontium compound, and a barium compound; at least one selected from the group consisting of a compound containing a metal a maximum positive value of an oxidation number of which is IV, a compound containing a metal a maximum positive value of an oxidation number of which is V, and a compound containing a metal a maximum positive value of an oxidation number of which is VI; and an organic solvent.
摘要翻译：提供一种用于形成金属氧化物膜的涂布液，含有铟化合物; 选自镁化合物，钙化合物，锶化合物和钡化合物中的至少一种; 至少一种选自含有金属的化合物，其氧化数的最大正值为IV，含有氧化数最大正值为V的金属的化合物为V，以及含有金属氧化数的最大正值为VI; 和有机溶剂。

30. 发明申请

US20080208409A1 VEHICLE DYNAMICS CONTROL APPARATUS 有权
标题翻译：车辆动态控制装置
公开(公告)号：US20080208409A1
公开(公告)日：2008-08-28
申请号：US12111710
申请日：2008-04-29
申请人： Shinji MATSUMOTO , Genpei NAITO , Satoshi TANGE
发明人： Shinji MATSUMOTO , Genpei NAITO , Satoshi TANGE
IPC分类号： B60W30/12 , B62D6/00
CPC分类号： B60W10/20 , B60T8/17557 , B60T2201/08 , B60T2201/083 , B60T2201/087 , B60W10/06 , B60W10/18 , B60W30/12 , B60W30/16 , B62D6/003 , B62D15/025
摘要： In a vehicle dynamics control apparatus capable of balancing a vehicle dynamics stability control system and a lane deviation prevention control system, a cooperative control section is provided to make a cooperative control between lane deviation prevention control (LDP) and vehicle dynamics stability control (VDC). When a direction of yawing motion created by LDP control is opposite to a direction of yawing motion created by VDC control, the cooperative control section puts a higher priority on VDC control rather than LDP control. Conversely when the direction of yawing motion created by LDP control is identical to the direction of yawing motion created by VDC control, a higher one of the LDP desired yaw moment and the VDC desired yaw moment is selected as a final desired yaw moment, to prevent over-control, while keeping the effects obtained by both of VDC control and LDP control.
摘要翻译：在能够平衡车辆动力学稳定性控制系统和车道偏离防止控制系统的车辆动力学控制装置中，提供协调控制部分，以在车道偏离防止控制（LDP）和车辆动力学稳定性控制（VDC）之间进行协调控制，。当通过LDP控制产生的偏航运动的方向与由VDC控制产生的偏航运动的方向相反时，协作控制部分对VDC控制而不是LDP控制具有更高的优先级。相反，当由LDP控制产生的偏航运动的方向与由VDC控制产生的偏航运动的方向相同时，LDP期望的偏航力矩和VDC期望的横摆力矩中较高的一个被选作最终期望的横摆力矩，以防止过度控制，同时保持由VDC控制和LDP控制两者获得的效果。

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