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21. 外观设计

USD631948S1 Seal ring for stern tube 有权
公开(公告)号：USD631948S1
公开(公告)日：2011-02-01
申请号：US29366128
申请日：2010-07-20
申请人： Hisashi Yoshida , Motofumi Inaba , Minoru Takayasu
设计人： Hisashi Yoshida , Motofumi Inaba , Minoru Takayasu

22. 发明申请

US20060055307A1 Green light-emitting fluorescent material and fluorescent lamp using same 审中-公开
标题翻译：绿色发光荧光材料和荧光灯使用相同
公开(公告)号：US20060055307A1
公开(公告)日：2006-03-16
申请号：US10543206
申请日：2004-01-23
申请人： Ryo Yoshimatsu , Hisashi Yoshida
发明人： Ryo Yoshimatsu , Hisashi Yoshida
IPC分类号： H01J1/62 , H01J63/04 , C09K11/08
CPC分类号： C09K11/7774
摘要： An object of the present invention is to provide a green light-emitting fluorescent material which efficiently absorbs lights, has a short afterglow time and emits a green light when an ultraviolet light at a wavelength of 254 nm sent forth by the mercury discharge is used as an excitation source, and a fluorescent lamp with a short response time. A green light-emitting fluorescent material of the present invention is a fluorescent material comprising, at least, calcium, yttrium, aluminum and oxygen, with terbium as an activator at an emission center. This green light-emitting fluorescent material has a composition expressed by the general formula CaY1-xTbxAlO4 (wherein 0.005≦x≦0.5). Further, Gadolinium and/or lanthanum is, in part, substituted for yttrium and has a composition expressed by the general formula CaY1-x-yTbxReyAlO4 (wherein Re is at least one sort of elements selected between Gd and La, and 0.005≦x≦0.5, 0.1≦y≦0.7). Further, this green light-emitting fluorescent material also efficiently absorbs an ultraviolet light in a wavelength region around 240 nm and, being excited, emits a light.
摘要翻译：本发明的一个目的是提供一种绿色发光荧光材料，当使用由汞放电发出的波长为254nm的紫外光作为有效吸收光，具有短的余辉时间并发出绿光时，作为激发源和响应时间短的荧光灯。本发明的绿色发光荧光材料是至少包含钙，钇，铝和氧的荧光材料，铽在发光中心作为活化剂。该绿色发光荧光材料具有由通式CaY 1-x Sb x Al 2 O 4（其中0.005 <= x <= 0.5）。此外，钆和/或镧部分地代替钇，并且具有由通式CaY 1-xy Tb x x <<<<<<<<<<<<<<<<<<<<<<<<<<<<< （其中Re是Gd和La之间选择的至少一种元素，0.005≤x≤0.5,0.1≤y≤0.7）。此外，该绿色发光荧光体也能够有效地吸收240nm左右的波长区域的紫外线，被激发而发光。

23. 发明申请

US20050133801A1 Red fluorescent material, white light emitting diode using red fluorescent material, and lighting device using white light emitting diode 审中-公开
标题翻译：红色荧光材料，使用红色荧光材料的白色发光二极管，以及使用白色发光二极管的照明装置
公开(公告)号：US20050133801A1
公开(公告)日：2005-06-23
申请号：US11013879
申请日：2004-12-17
申请人： Ryo Yoshimatsu , Hisashi Yoshida
发明人： Ryo Yoshimatsu , Hisashi Yoshida
IPC分类号： C09K11/78 , C09K11/08 , C09K11/68 , C09K11/77 , C09K11/80 , G02F1/13 , H01L21/00 , H01L27/15 , H01L33/48 , H01L33/50
CPC分类号： C09K11/7789 , C09K11/7736 , C09K11/7794 , H01L33/502 , H01L33/504 , Y02B20/181
摘要： The present invention achieves improvement of the color reproducibility, color rendering properties and light emitting efficiency of a white light emitting diode. The present invention is a red fluorescent material composed of a europium doped calcium lanthanum tungstate represented by a general formula of Ca3(La1−x,Eux)2W2012 (0
摘要翻译：本发明实现白色发光二极管的色彩再现性，显色性和发光效率的提高。本发明是一种红色荧光材料，由掺杂铕的镧钙镧钨酸盐组成，其由通式为Ca 3（La 1-x x，Eu x x）（0 红色荧光材料可以将紫外发光二极管的350〜410nm的发光波长范围内的光有效地转换成红色的光，可有效地将465nm的蓝色光和538nm的绿色光转换为红色。

24. 发明授权

US5838411A Liquid crystal display device with unequal sized dummy sub-electrodes having a specific relationship 失效
标题翻译：具有不同大小的虚拟子电极的液晶显示装置具有特定的关系
公开(公告)号：US5838411A
公开(公告)日：1998-11-17
申请号：US988234
申请日：1997-12-10
申请人： Kouji Hayakawa , Satoshi Endo , Hisashi Yoshida , Noboru Hoshino , Masayoshi Fujieda
发明人： Kouji Hayakawa , Satoshi Endo , Hisashi Yoshida , Noboru Hoshino , Masayoshi Fujieda
IPC分类号： G02F1/133 , G02F1/1333 , G02F1/1335 , G02F1/1343
CPC分类号： G02F1/134336 , G02F1/133512 , G02F2001/133388
摘要： A liquid crystal display device includes a liquid crystal display panel. The liquid crystal display panel includes a first transparent substrate having color filters arranged in a predetermined order, a patterned light blocking film formed between the color filters and first transparent electrodes formed on the color filters; a second transparent substrate having second transparent electrodes arranged to intersect the first transparent electrodes; a liquid crystal layer sandwiched between the first and second transparent substrates with the first and second transparent electrodes opposing each other and spacers dispersed between the first and second transparent substrates. The color filters and the light blocking film extend into a marginal area outside an area optically switchable upon application of an electric field on the liquid crystal display panel in substantially the same geometric pattern as within the optically switchable area. A plurality of dummy electrodes can also be formed in the marginal area on at least one of the first and second substrates, so as to oppose the transparent electrodes on the opposite substrate. The extension of the color filters and the light blocking film into a marginal area and the disposition of the dummy electrodes in the marginal area can be applied in one liquid crystal display panel, singly or in combination.
摘要翻译：液晶显示装置包括液晶显示面板。液晶显示面板包括具有以预定顺序布置的滤色器的第一透明基板，形成在滤色器和形成在滤色器上的第一透明电极之间的图案遮光膜; 第二透明基板，具有布置成与第一透明电极相交的第二透明电极; 夹在第一和第二透明基板之间的液晶层，其中第一和第二透明电极彼此相对，分隔在第一和第二透明基板之间。滤色器和遮光膜延伸到在可与光可切换区域基本相同的几何图案中的在液晶显示面板上施加电场之后可光学切换的区域中的边缘区域。多个虚拟电极也可以形成在第一和第二基板中的至少一个上的边缘区域中，以与相对基板上的透明电极相对。将滤色器和遮光膜延伸到边缘区域中，并且虚拟电极在边缘区域中的布置可以单独地或组合地应用于一个液晶显示面板。

25. 发明授权

US5759797A Apparatus and method for analyzing physiological state of organism 失效
标题翻译：用于分析生物体的生理状态的装置和方法
公开(公告)号：US5759797A
公开(公告)日：1998-06-02
申请号：US496252
申请日：1995-06-28
申请人： Akira Horigane , Hisashi Yoshida , Ushio Matsukura , Yoshihiko Nawa , Noboru Horisue , Masayoshi Kamio
发明人： Akira Horigane , Hisashi Yoshida , Ushio Matsukura , Yoshihiko Nawa , Noboru Horisue , Masayoshi Kamio
IPC分类号： A01G7/00 , A61B5/055 , G01N24/08 , G01R33/30 , G01R33/31 , G01R33/34 , G01R33/465 , G01R33/48 , C12Q1/02 , A01N1/02 , C12Q1/00 , H01H47/00
CPC分类号： G01R33/30 , G01R33/34053 , G01R33/465 , Y10T436/24
摘要： An apparatus and a method for analyzing the physiological state of a sample of a living organism of eucaryotes and procaryotes, e.g., plants, seeds, tissues, calluses and microorganisms, which permits the examination of the sample for its physiological state internally in a successive and non-destructive manner to thereby enable the analysis of the change of the sample in the histomorphological and metabolic aspect due to the growth thereof, by arranging, within the hollow core space of a magnetic field generator composed of a stationary magnetic field generating coil and a gradient magnetic field generating coil, a detection unit and an RF-emission-reception set; supporting the resulting assembly on an air feed duct which also serves supporting beam; placing a sample holder with the sample of an organism being included therein within the detection unit; maintaining the detection unit at a constant temperature by supplying warm air or cold air thereto via the air feed duct, while supplying thereto a liquid feed and a gas feed via a liquid feed tube and gas feed tube, respectively, to let the sample grow; actuating the RF-emission-reception set to emit RF pulses from an RF coil and to receive the resulting MR signals from the sample; and processing the MR signals into corresponding MR image and/or spectrum, in order to analyze the change in the physiological state of the sample organism.
摘要翻译：一种用于分析真核生物和原核生物（例如植物，种子，组织，愈伤组织和微生物）的生物体的样品的生理状态的装置和方法，其允许在连续和连续的内部内部检查样品的生理状态从而能够通过在由固定磁场产生线圈和磁场产生线圈构成的磁场发生器的空心磁芯空间内布置由于其生长而在组织形态和代谢方面对样品的变化进行分析梯度磁场产生线圈，检测单元和RF发射接收装置; 将所得的组件支撑在还用于支撑梁的进气管道上; 将包含生物体的样品的样品架放置在检测单元内; 通过供气管道向其供应温暖的空气或冷空气，同时通过液体进料管和气体进料管分别供应液体进料和气体进料，使检测单元保持在恒定温度，以使样品生长; 启动RF发射接收设备以从RF线圈发射RF脉冲并从样品接收所得到的MR信号; 以及将MR信号处理成对应的MR图像和/或频谱，以便分析样品生物体的生理状态的变化。

26. 外观设计

USD382766S Pot for rice cooker 失效
公开(公告)号：USD382766S
公开(公告)日：1997-08-26
申请号：US55791
申请日：1996-06-13
申请人： Masanori Hamada , Kazunori Mano , Hisashi Yoshida
设计人： Masanori Hamada , Kazunori Mano , Hisashi Yoshida

27. 发明授权

US09397167B2 Nitride semiconductor wafer, nitride semiconductor device, and method for manufacturing nitride semiconductor wafer 有权
标题翻译：氮化物半导体晶片，氮化物半导体器件以及氮化物半导体晶片的制造方法
公开(公告)号：US09397167B2
公开(公告)日：2016-07-19
申请号：US13729713
申请日：2012-12-28
申请人： Hisashi Yoshida , Toshiki Hikosaka , Yoshiyuki Harada , Naoharu Sugiyama , Shinya Nunoue
发明人： Hisashi Yoshida , Toshiki Hikosaka , Yoshiyuki Harada , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L29/15 , H01L29/20 , H01L21/02 , H01L29/778 , H01L29/06 , H01L33/00 , H01L33/12
CPC分类号： H01L29/2003 , H01L21/02104 , H01L21/02381 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L29/0649 , H01L29/7786 , H01L33/007 , H01L33/12
摘要： A nitride semiconductor wafer includes a silicon substrate, a stacked multilayer unit, a silicon-containing unit, and an upper layer unit. The silicon substrate has a major surface. The stacked multilayer unit is provided on the major surface. The stacked multilayer unit includes N number of buffer layers. The buffer layers include an i-th buffer layer, and an (i+1)-th buffer layer provided on the i-th buffer layer. The i-th buffer layer has an i-th lattice length Wi in a first direction parallel to the major surface. The (i+1)-th buffer layer has an (i+1)-th lattice length W(i+1) in the first direction. A relation that (W(i+1)−Wi)/Wi≦0.008 is satisfied for all the buffer layers. The silicon-containing unit is provided on the stacked multilayer unit. The upper layer unit is provided on the silicon-containing unit.
摘要翻译：氮化物半导体晶片包括硅衬底，堆叠多层单元，含硅单元和上层单元。硅衬底具有主表面。堆叠的多层单元设置在主表面上。堆叠的多层单元包括N个缓冲层。缓冲层包括第i个缓冲层和设置在第i个缓冲层上的第（i + 1）个缓冲层。第i个缓冲层在平行于主表面的第一方向上具有第i个晶格长度Wi。第（i + 1）个缓冲层在第一方向具有第（i + 1）个格子长度W（i + 1）。对于所有缓冲层，满足（W（i + 1）-Wi）/ Wi＆nlE; 0.008的关系。含硅单元设置在堆叠的多层单元上。上层单元设置在含硅单元上。

28. 发明授权

US09349590B2 Method for manufacturing nitride semiconductor layer 有权
标题翻译：氮化物半导体层的制造方法
公开(公告)号：US09349590B2
公开(公告)日：2016-05-24
申请号：US13604183
申请日：2012-09-05
申请人： Toshiki Hikosaka , Yoshiyuki Harada , Hisashi Yoshida , Naoharu Sugiyama , Shinya Nunoue
发明人： Toshiki Hikosaka , Yoshiyuki Harada , Hisashi Yoshida , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L21/02 , H01L33/00 , H01L33/12
CPC分类号： H01L21/02389 , H01L21/02381 , H01L21/02458 , H01L21/0254 , H01L33/007 , H01L33/12
摘要： According to one embodiment, a method for manufacturing a nitride semiconductor layer is disclosed. The method can include forming a first lower layer on a major surface of a substrate and forming a first upper layer on the first lower layer. The first lower layer has a first lattice spacing along a first axis parallel to the major surface. The first upper layer has a second lattice spacing along the first axis larger than the first lattice spacing. At least a part of the first upper layer has compressive strain. A ratio of a difference between the first and second lattice spacing to the first lattice spacing is not less than 0.005 and not more than 0.019. A growth rate of the first upper layer in a direction parallel to the major surface is larger than that in a direction perpendicular to the major surface.
摘要翻译：根据一个实施例，公开了一种用于制造氮化物半导体层的方法。该方法可以包括在基底的主表面上形成第一下层，并在第一下层上形成第一上层。第一下层沿着平行于主表面的第一轴线具有第一格子间距。第一上层具有沿着第一轴线的第二格子间距大于第一格子间距。第一上层的至少一部分具有压缩应变。第一和第二格子间隔之间的差与第一格子间隔的比率不小于0.005且不大于0.019。第一上层在与主表面平行的方向上的生长速率大于垂直于主表面的方向的生长速率。

29. 发明授权

US08680537B2 Nitride semiconductor element and nitride semiconductor wafer 有权
标题翻译：氮化物半导体元件和氮化物半导体晶片
公开(公告)号：US08680537B2
公开(公告)日：2014-03-25
申请号：US13602868
申请日：2012-09-04
申请人： Toshiki Hikosaka , Yoshiyuki Harada , Hisashi Yoshida , Naoharu Sugiyama , Shinya Nunoue
发明人： Toshiki Hikosaka , Yoshiyuki Harada , Hisashi Yoshida , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L33/02
CPC分类号： H01L29/205 , B82Y20/00 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L29/2003 , H01L29/365 , H01L29/7783 , H01L33/06 , H01L33/12 , H01L33/32
摘要： According to one embodiment, a nitride semiconductor element includes a foundation layer, a functional layer and a stacked body. The stacked body is provided between the foundation layer and the functional layer. The stacked body includes a first stacked intermediate layer including a first GaN intermediate layer, a first high Al composition layer of Alx1Ga1-x1N (0
摘要翻译：根据一个实施例，氮化物半导体元件包括基底层，功能层和层叠体。层叠体设置在基础层和功能层之间。层叠体包括第一层叠中间层，其包括第一GaN中间层，Al x Ga 1-x N 1的第一高Al组成层（0

30. 发明申请

US20130062612A1 NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR WAFER, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAYER 有权
标题翻译：氮化物半导体器件，氮化物半导体器件和制造氮化物半导体层的方法
公开(公告)号：US20130062612A1
公开(公告)日：2013-03-14
申请号：US13407169
申请日：2012-02-28
申请人： Tomonari Shioda , Hung Hung , Jongil Hwang , Hisashi Yoshida , Naoharu Sugiyama , Shinya Nunoue
发明人： Tomonari Shioda , Hung Hung , Jongil Hwang , Hisashi Yoshida , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： H01L21/0254 , H01L21/02381 , H01L21/02458 , H01L21/02505 , H01L21/0251 , H01L33/007 , H01L33/12 , H01L33/32
摘要： According to one embodiment, a nitride semiconductor device includes a foundation layer, a first stacked intermediate layer, and a functional layer. The foundation layer includes an AlN buffer layer formed on a substrate. The first stacked intermediate layer is provided on the foundation layer. The first stacked intermediate layer includes a first AlN intermediate layer provided on the foundation layer, a first AlGaN intermediate layer provided on the first AlN intermediate layer, and a first GaN intermediate layer provided on the first AlGaN intermediate layer. The functional layer is provided on the first stacked intermediate layer. The first AlGaN intermediate layer includes a first step layer in contact with the first AlN intermediate layer. An Al composition ratio in the first step layer decreases stepwise in a stacking direction from the first AlN intermediate layer toward the first step layer.
摘要翻译：根据一个实施例，氮化物半导体器件包括基底层，第一堆叠中间层和功能层。基底层包括形成在基底上的AlN缓冲层。第一堆叠中间层设置在基础层上。第一堆叠中间层包括设置在基底层上的第一AlN中间层，设置在第一AlN中间层上的第一AlGaN中间层和设置在第一AlGaN中间层上的第一GaN中间层。功能层设置在第一堆叠中间层上。第一AlGaN中间层包括与第一AlN中间层接触的第一阶梯层。第一层中的Al组成比在层叠方向上从第一AlN中间层朝向第一阶层逐渐降低。

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