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    • 21. 发明申请
    • Plasma processing method
    • 等离子体处理方法
    • US20050126712A1
    • 2005-06-16
    • US11043971
    • 2005-01-28
    • Masahiro SumiyaNaoki YasuiTomoyuki Tamura
    • Masahiro SumiyaNaoki YasuiTomoyuki Tamura
    • H05H1/46C23C16/505C23C16/509H01J37/32H01L21/3065C23F1/00
    • H01J37/32082C23C16/5096H01J37/32165H01J37/32706
    • A plasma processing method utilizing an apparatus comprising a processing chamber to which is connected an exhaust pump for decompressing the chamber, a gas feeding apparatus for feeding gas into the processing chamber, an object to be processed, a wafer electrode for mounting the object, an antenna electrode for generating plasma and opposed to the plate electrode, a plasma generating high frequency power supply connected to the antenna electrode, a first high frequency power supply connected to the wafer electrode, and a second high frequency power supply connected to the antenna electrode. The method includes setting the high frequencies applied from the first high frequency power supply and the second high frequency power supply to be equal and controlling the phase of the respective high frequencies.
    • 一种等离子体处理方法,其特征在于,利用包括连接有用于对所述室进行减压的排气泵的处理室的设备,用于将气体供给到所述处理室中的气体供给装置,待处理物体,用于安装所述物体的晶片电极, 用于产生等离子体并与板电极相对的天线电极,连接到天线电极的等离子体产生高频电源,连接到晶片电极的第一高频电源和连接到天线电极的第二高频电源。 该方法包括将从第一高频电源和第二高频电源施加的高频设置为相等并控制各个高频的相位。
    • 25. 发明申请
    • Radiation detecting apparatus, manufacturing method thereof, scintillator panel and radiation detecting system
    • 辐射检测装置及其制造方法,闪烁体面板和放射线检测系统
    • US20060033040A1
    • 2006-02-16
    • US11199201
    • 2005-08-09
    • Satoshi OkadaYoshihiro OgawaMasato InoueKazumi NaganoShinichi TakedaTomoyuki Tamura
    • Satoshi OkadaYoshihiro OgawaMasato InoueKazumi NaganoShinichi TakedaTomoyuki Tamura
    • H05B33/00
    • G21K4/00
    • A radiation detecting apparatus includes a sensor panel 100, a phosphor layer 111 formed on the sensor panel 100 to convert a radiation into light, and a phosphor protecting member 110 covering the phosphor layer 111 to adhere closely to the phosphor protecting member 110. The phosphor protecting member 110 includes a phosphor protecting layer 116 made of vapor deposition polymerization polyimide formed by vapor deposition polymerization, a reflecting layer 113 reflecting the light converted by the phosphor layer 111, and a protecting layer 117 made of vapor deposition polymerization polyurea formed by the vapor deposition polymerization. By such a configuration, a polymerization reaction of the phosphor protecting layer 116 is performed on the substrate. Thereby, the generation of by-products is suppressed to make it easy to acquire the uniformity of film quality. Consequently, the generation of a situation in which structural disorders are generated on the reflection surface of the reflecting layer 113 to cause image defects can be suppressed.
    • 辐射检测装置包括传感器面板100,形成在传感器面板100上以将辐射转换为光的荧光体层111和覆盖荧光体层111以紧密附着于荧光体保护构件110的荧光体保护构件110。 荧光体保护构件110包括由气相沉积聚合形成的蒸镀聚合聚酰亚胺制成的荧光体保护层116,反射层113反射由荧光体层111转换的光,以及由气相沉积聚合聚脲制成的保护层117, 气相沉积聚合。 通过这样的结构,在基板上进行荧光体保护层116的聚合反应。 由此,抑制了副产物的产生,从而容易获得膜质量的均匀性。 因此,可以抑制在反射层113的反射面上产生结构紊乱以引起图像缺陷的情况的产生。
    • 29. 发明授权
    • Rectifier and process for producing the rectifier
    • 整流器和整流器的制造工艺
    • US08487415B2
    • 2013-07-16
    • US12740460
    • 2008-10-30
    • Hisashi ShimaHiroyuki AkinagaShoji IshibashiTomoyuki Tamura
    • Hisashi ShimaHiroyuki AkinagaShoji IshibashiTomoyuki Tamura
    • H01L29/861
    • H01L29/872H01L29/24
    • The present invention provides a rectifier element that has a titanium oxide layer interposed between first and second electrodes containing a transition metal with an electronegativity larger than that of Ti, wherein, in the titanium oxide layer, only the interface on the side facing any one of the electrodes has a stoichiometric composition, and wherein the average composition of the whole layer is represented by the formula TiOx (wherein x satisfies the relationship 1.6≦x
    • 本发明提供了一种整流元件,其具有插入在第一和第二电极之间的氧化钛层,其包含电负性大于Ti的过渡金属,其中,在氧化钛层中,仅在与 电极具有化学计量组成,并且其中整个层的平均组成由式TiOx表示(其中x满足关系1.6@x <2),并且其中可以通过施加反向电信号来反转整流特性, 在相反方向超过第一和第二电极之间的临界反向电力。 本发明还提供一种整流元件的制造方法,该方法包括以下步骤:在基片上沉积含有电负性大于Ti的过渡金属的第一电极; 在第一电极上沉积一层氧化钛(TiOx,其中x满足关系1.6@x <2); 将氧化钛(TiOx)层的表面暴露于氧气氛中; 以及在暴露于氧气氛的氧化钛(TiOx)层的表面上沉积含有电负性大于Ti的过渡金属的第二电极。