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21. 发明授权

US07662685B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07662685B2
公开(公告)日：2010-02-16
申请号：US11234217
申请日：2005-09-26
申请人： Masamichi Suzuki , Takeshi Yamaguchi
发明人： Masamichi Suzuki , Takeshi Yamaguchi
IPC分类号： H01L21/8242
CPC分类号： H01L21/02175 , C23C14/08 , C23C14/28 , H01L21/28194 , H01L21/31641 , H01L21/31645 , H01L21/31691 , H01L29/495 , H01L29/4966 , H01L29/517
摘要： A semiconductor device includes a Si substrate, a gate insulating film formed on the Si substrate, the gate insulating film being formed of an oxide film containing at least one selected from the group of Zr, Hf, Ti and a lanthanoid series metal, and having a single local minimal value on a high binding energy side of an inflection point in first differentiation of an O1s photoelectron spectrum, and a gate electrode formed on the gate insulating film.
摘要翻译：半导体器件包括Si衬底，形成在Si衬底上的栅极绝缘膜，所述栅极绝缘膜由包含选自Zr，Hf，Ti和镧系元素金属中的至少一种的氧化物膜形成，并且具有在O1s光电子光谱的第一微分中的拐点的高结合能量侧的单个局部最小值，以及形成在栅极绝缘膜上的栅电极。

22. 发明申请

US20090260124A1 WOVEN OR KNITTED FABRIC CONTAINING TWO DIFFERENT TYPES OF YARNS AND CLOTHING CONTAINING THE FABRIC 审中-公开
标题翻译：包含两种不同类型的纱线和包含织物的衣服的针织织物
公开(公告)号：US20090260124A1
公开(公告)日：2009-10-22
申请号：US12494059
申请日：2009-06-29
申请人： Satoshi YASUI , Seiji Mizohata , Takeshi Yamaguchi , Kengo Tanaka
发明人： Satoshi YASUI , Seiji Mizohata , Takeshi Yamaguchi , Kengo Tanaka
IPC分类号： A41D1/00 , D03D15/00 , D04B1/00 , D04B1/14 , D04B21/14 , D06C11/00 , A41B9/00
CPC分类号： D04B1/16 , A41B17/00 , A41B2400/60 , A41D31/00 , A41D31/02 , A41D31/14 , D02G3/28 , D02G3/32 , D02G3/44 , D03D15/00 , D03D15/0027 , D03D15/0083 , D04B21/16 , D10B2201/02 , D10B2201/24 , D10B2201/28 , D10B2321/022 , D10B2321/06 , D10B2321/10 , D10B2331/04 , D10B2401/02 , D10B2401/046 , D10B2401/061 , D10B2403/0114 , D10B2403/02 , D10B2403/023 , D10B2403/0331 , D10B2501/00 , D10B2501/02 , Y10T428/2395 , Y10T442/30 , Y10T442/3065 , Y10T442/313 , Y10T442/3146 , Y10T442/3154 , Y10T442/3163 , Y10T442/3179 , Y10T442/3976 , Y10T442/40 , Y10T442/438 , Y10T442/444 , Y10T442/45
摘要： A woven or knitted fabric, formed from two types of yarns different in self-elongating property upon absorbing water and capable of facilitating the air-permeability when wetted with water, is constituted so that a ratio A/B of a mean length A of high water-absorbing, self-elongating yarns (1) to a mean length B of lower water-absorbing, self-elongating yarns (2) arranged in the same direction as that of the yarn (1) property is adjusted to 0.9 or less, the wetted fabric exhibits a change in roughness of 5% or more.
摘要翻译：由两种不同于吸水时的自伸长性能并且在润湿水时能够促进透气性的纱线形成的机织或针织织物构成为平均长度A的比A / B高以与纱线（1）性质相同的方向排列的吸水自拉伸纱线（1）的平均长度B被调节到0.9以下，湿织物的粗糙度变化为5％以上。

23. 发明授权

US07518233B1 Sealing structure for multi-chip module 失效
标题翻译：多芯片模块密封结构
公开(公告)号：US07518233B1
公开(公告)日：2009-04-14
申请号：US09590897
申请日：2000-06-09
申请人： Kouichi Takahashi , Kenichi Kasai , Takahiro Daikoku , Takayuki Uda , Toshitada Netsu , Takeshi Yamaguchi , Takahiko Matsushita , Osamu Maruyama
发明人： Kouichi Takahashi , Kenichi Kasai , Takahiro Daikoku , Takayuki Uda , Toshitada Netsu , Takeshi Yamaguchi , Takahiko Matsushita , Osamu Maruyama
IPC分类号： H01L23/12 , H01L23/10 , H01L23/34 , H01L23/28 , H01L21/00
CPC分类号： H01L23/4006 , H01L2023/4068 , H01L2023/4081 , H01L2224/16225 , H01L2224/73253 , H01L2924/09701
摘要： A sealing structure for multi-chip modules stable in cooling performance and excelling in sealing reliability is to be provided. The under face of a frame 5 compatible with a wiring board 1 in thermal expansion rate is fixed with solder 8 to the face of the wiring board 1 for mounting semiconductor devices 2; a rubber O-ring 15 is placed between the upper face of the frame 5 and the under face of the circumference of an air-cooled: heat sink 7; the plastic member 6 making possible relative sliding is placed between the upper face of the circumference of the heat sink 7 and the upper frame 10; the upper face of a plastic member 6 is restrained with the inside middle stage of an upper frame 10; and the lower part of the upper frame 10 and the frame 5 are fastened together with bolts 9.
摘要翻译：提供一种用于具有稳定的冷却性能和优异的密封可靠性的多芯片模块的密封结构。以热膨胀率与布线板1相容的框架5的底面用焊料8固定到布线板1的面上，用于安装半导体器件2; 橡胶O形环15放置在框架5的上表面和空气冷却：散热器7的圆周的下表面之间; 能够进行相对滑动的塑料构件6设置在散热器7的周边的上表面与上框架10之间; 塑料构件6的上表面被上框架10的内侧中间段限制; 并且上部框架10的下部和框架5用螺栓9紧固在一起。

24. 发明授权

US07382491B2 Scanner relay apparatus and image reading controlling method 有权
标题翻译：扫描仪中继装置和图像读取控制方法
公开(公告)号：US07382491B2
公开(公告)日：2008-06-03
申请号：US10759512
申请日：2004-01-16
申请人： Kazunori Miyamoto , Takeshi Yamaguchi , Masakazu Suzuki , Mariko Arai , Masahiro Inoue
发明人： Kazunori Miyamoto , Takeshi Yamaguchi , Masakazu Suzuki , Mariko Arai , Masahiro Inoue
IPC分类号： H04N1/40
CPC分类号： H04N1/00241 , H04N1/00236 , H04N1/32502 , H04N1/32523 , H04N2201/0015 , H04N2201/0039 , H04N2201/0049 , H04N2201/3205 , H04N2201/3278
摘要： A scan ID, which is operation identification information having been used for selection of an image reading condition or the like, is used for selection of a communication destination from among a plurality of host PCs having network-connection to a scanner relay apparatus. Information such as an image reading condition associated with the scan ID is sent to a host PC defined as a communication destination, and a scan command sent back from the host PC, whose protocol is converted, is sent to a scanner apparatus. Furthermore, image data sent back from the scanner apparatus is sent to the host PC.
摘要翻译：使用已经用于选择图像读取条件等的操作识别信息的扫描ID用于从具有与扫描仪中继装置的网络连接的多个主机PC中选择通信目的地。诸如与扫描ID相关联的图像读取条件的信息被发送到被定义为通信目的地的主机PC，并且从其协议被转换的主机PC发回的扫描命令被发送到扫描仪装置。此外，从扫描仪装置发回的图像数据被发送到主机PC。

25. 发明授权

US07339867B2 Defect-signal generating circuit and optical disk reproducing device having the same 失效
标题翻译：缺陷信号发生电路和具有该缺陷信号产生电路的光盘再现装置
公开(公告)号：US07339867B2
公开(公告)日：2008-03-04
申请号：US11057339
申请日：2005-02-11
申请人： Takeshi Yamaguchi , Ryo Ando
发明人： Takeshi Yamaguchi , Ryo Ando
IPC分类号： G11B7/00
CPC分类号： G11B20/10203
摘要： An optical disk reproducing device has a defect-signal generating circuit including a peak-holding-signal generating circuit for generating a peak-hold signal based on an RF signal read from a recording medium, an intermediate-signal generating circuit for generating an intermediate signal based on the peak-hold signal, a signal-level adjusting circuit for generating a threshold signal based on the intermediate signal, a threshold-signal adjusting circuit for adjusting the level of the threshold signal, and a comparator for generating a defect signal based on the peak-hold signal and threshold signal. The threshold-signal adjusting circuit includes at least one of: a first adjusting circuit for raising the threshold signal in the event the peak-hold signal falls below the threshold signal due to the peak-hold signal and the threshold signal being reversed; and a second adjusting circuit for lowering the threshold signal in the event the peak-hold signal exceeds the threshold signal, due to the reversal.
摘要翻译：光盘再现装置具有缺陷信号发生电路，该缺陷信号产生电路包括：峰值保持信号产生电路，用于根据从记录介质读取的RF信号产生峰值保持信号;产生中间信号的中间信号产生电路基于所述峰值保持信号，生成基于所述中间信号的阈值信号的信号电平调整电路，用于调整所述阈值信号的电平的阈值信号调整电路，以及基于峰值保持信号和阈值信号。阈值信号调整电路包括以下至少一个：第一调整电路，用于在峰值保持信号由于峰值保持信号和阈值信号反相而在阈值信号下降的情况下提升阈值信号; 以及第二调整电路，用于在峰值保持信号超过阈值信号的情况下，由于反转而降低阈值信号。

26. 发明申请

US20070029550A1 LIQUID CRYSTAL DISPLAY APPARATUS 审中-公开
标题翻译：液晶显示装置
公开(公告)号：US20070029550A1
公开(公告)日：2007-02-08
申请号：US11458562
申请日：2006-07-19
申请人： Norihiro Yoshida , Akio Murayama , Takeshi Yamaguchi
发明人： Norihiro Yoshida , Akio Murayama , Takeshi Yamaguchi
IPC分类号： H01L29/04
CPC分类号： G02F1/1393 , G02F2001/133541 , G02F2001/136222
摘要： A liquid crystal display apparatus comprises a liquid crystal display panel including a first substrate containing a color filter including a plurality of coloring layers, a second substrate arranged opposite to the first substrate and including a display surface on an opposite side to the first substrate and a liquid crystal layer held between the first substrate and the second substrate, and a circular polarization element arranged opposite to the display surface of the second substrate.
摘要翻译：一种液晶显示装置，包括：液晶显示面板，包括含有包括多个着色层的滤色器的第一基板，与第一基板相对布置的第二基板，并且在与第一基板相反的一侧上包括显示面，保持在第一基板和第二基板之间的液晶层和与第二基板的显示表面相对布置的圆偏振元件。

27. 发明授权

US07092117B2 Print system 有权
公开(公告)号：US07092117B2
公开(公告)日：2006-08-15
申请号：US09903684
申请日：2001-07-13
申请人： Seiji Kageyama , Tatsuro Akabane , Takeshi Yamaguchi , Katsumi Kumagai
发明人： Seiji Kageyama , Tatsuro Akabane , Takeshi Yamaguchi , Katsumi Kumagai
IPC分类号： G06F15/00
CPC分类号： G06K15/02 , G06F3/1205 , G06F3/125 , G06F3/1264 , G06F3/1285 , G06F3/1288
摘要： In a print system comprising a computer and a printer connected directly or indirectly via a network to the computer, the printer stores documents prepared by the computer, has a page/document layout processing section for the stored documents, and can output document data undergoing page/document layout, provided by the page/document layout processing section.

28. 发明申请

US20060163676A1 Insulating film and semiconductor device 有权
标题翻译：绝缘膜和半导体器件
公开(公告)号：US20060163676A1
公开(公告)日：2006-07-27
申请号：US11318622
申请日：2005-12-28
申请人： Tatsuo Shimizu , Takeshi Yamaguchi
发明人： Tatsuo Shimizu , Takeshi Yamaguchi
IPC分类号： H01L29/94
CPC分类号： H01L21/02175 , H01L21/28194 , H01L21/28211 , H01L21/28273 , H01L21/31691 , H01L29/513 , H01L29/517 , H01L29/518
摘要： An insulating film includes an oxide or an oxynitride of a constituent element having a positive valence. The oxide or the oxynitride contains an additive element having a larger valence than the constituent element in a range not less than 3×10−8 at % and less than 1.6×10−3 at %.
摘要翻译：绝缘膜包括具有正价化合物的氧化物或氧氮化物。氧化物或氮氧化物含有比构成元素价格大的添加元素，其含量在不小于3×10 -8 at％且小于1.6×10 -3 -3的范围内％。

29. 发明申请

US20060112638A1 Method of modifying biomass, modified biomass aqueous biomass sluryy and method of producing the same, modified biomass gas and method of gasifying biomass 失效
标题翻译：改良生物质，改性生物质含水生物质泥沙的方法及其生产方法，改良生物质气体和气化生物质的方法
公开(公告)号：US20060112638A1
公开(公告)日：2006-06-01
申请号：US10523749
申请日：2003-04-25
申请人： Chiaki Suyama , Shinichi Tokuda , Masao Tsurui , Yoshimori Suto , Koji Tamura , Tsutomu Katagiri , Teruo Nagai , Jin Ogawa , Takeshi Yamaguchi
发明人： Chiaki Suyama , Shinichi Tokuda , Masao Tsurui , Yoshimori Suto , Koji Tamura , Tsutomu Katagiri , Teruo Nagai , Jin Ogawa , Takeshi Yamaguchi
IPC分类号： C10J3/46
CPC分类号： C10L1/326 , C10G31/08 , C10J3/00 , C10J2300/0916 , C10J2300/092 , C10J2300/0973 , C10J2300/1846 , C10L5/44 , C10L9/086 , C10L2250/06 , C10L2290/04 , C10L2290/24 , C10L2290/28 , Y02E50/10 , Y02E50/30
摘要： This method of upgrading a biomass comprises: an upgrading step for performing upgrading treatment of a cellulose based biomass with an oxygen/carbon atomic ratio of at least 0.5, in presence of water and under a pressure of at least saturated water vapor pressure, and reducing said oxygen/carbon atomic ratio of said biomass to no more than 0.38, and a separation step for separating an upgraded reactant obtained from said upgrading step into a solid component and a liquid component.
摘要翻译：这种升级生物质的方法包括：在水和至少饱和水蒸汽压的压力下，在氧/碳原子比为至少0.5的纤维素基生物质的基础上进行升级处理的升级步骤，并且还原所述生物质的氧/碳原子比不大于0.38，以及将从所述升级步骤获得的升级反应物分离成固体组分和液体组分的分离步骤。

30. 发明申请

US20050230759A1 Semiconductor device and method of manufacturing semiconductor device 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050230759A1
公开(公告)日：2005-10-20
申请号：US11049661
申请日：2005-02-04
申请人： Tatsuo Shimizu , Takeshi Yamaguchi , Yukie Nishikawa
发明人： Tatsuo Shimizu , Takeshi Yamaguchi , Yukie Nishikawa
IPC分类号： H01L21/322 , H01L21/28 , H01L21/316 , H01L21/336 , H01L29/49 , H01L29/51 , H01L29/76 , H01L29/78
CPC分类号： H01L29/513 , H01L21/02123 , H01L21/02142 , H01L21/022 , H01L21/28194 , H01L21/31604 , H01L21/31641 , H01L21/31645 , H01L21/31691 , H01L29/4966 , H01L29/51 , H01L29/517
摘要： A semiconductor device includes a semiconductor substrate containing Si as a main component, and an active element formed on the semiconductor substrate and including an insulating metal silicide thin film formed on the semiconductor substrate, dangling bonds of Si of the semiconductor substrate being terminated by the insulating metal silicide thin film.
摘要翻译：半导体器件包括以Si为主要成分的半导体衬底和形成在半导体衬底上的有源元件，并且包括形成在半导体衬底上的绝缘金属硅化物薄膜，半导体衬底的Si与绝缘体端接的悬挂键金属硅化物薄膜。

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