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21. 发明申请

US20150013746A1 Photovoltaic System with Embedded Energy Storage Device 审中-公开
标题翻译：具有嵌入式储能装置的光伏系统
公开(公告)号：US20150013746A1
公开(公告)日：2015-01-15
申请号：US14328673
申请日：2014-07-10
申请人： Alexander Mikhailovich Shukh
发明人： Alexander Mikhailovich Shukh
IPC分类号： H01L31/04
CPC分类号： H02S40/38 , H01L31/053 , Y02E10/50
摘要： One embodiment of a photovoltaic system comprises a solar cell, a blocking device and a magnetic capacitor, wherein the solar cell and the magnetic capacitor are stacked over each other, and wherein the solar cell and the magnetic capacitor are electrically coupled to each other through the blocking device. Other embodiments the photovoltaic system are described and shown.
摘要翻译：光伏系统的一个实施例包括太阳能电池，阻挡装置和磁性电容器，其中太阳能电池和磁性电容器彼此堆叠，并且其中太阳能电池和磁性电容器通过阻塞装置。其他实施例描述和示出了光伏系统。

22. 发明申请

US20140313637A1 Magnetic Capacitor 审中-公开
标题翻译：磁电容器
公开(公告)号：US20140313637A1
公开(公告)日：2014-10-23
申请号：US14260252
申请日：2014-04-23
申请人： Alexander Mikhailovich Shukh
发明人： Alexander Mikhailovich Shukh
IPC分类号： H01G9/15
CPC分类号： H01G4/008 , H01G4/015 , H01G4/20
摘要： One embodiment of an apparatus to store electrical energy comprises at least: a first multilayer section, a second multilayer section disposed above the first multilayer section; and an electrical battery comprising a first terminal having a positive polarity and a second terminal having a negative polarity, wherein each of the first and second multilayer sections comprises at least a first magnetic layer having a fixed magnetization direction, a second magnetic layer having a reversible magnetization, and an isolative layer disposed between the first and second magnetic layers, the first and second magnetic layers are substantially anti-ferromagnetically coupled to each other through the isolative layer, and wherein the first multilayer section and the section multilayer sections are coupled to the first and second terminals of the electrically battery. Other embodiments are described and shown.
摘要翻译：存储电能的装置的一个实施例至少包括：第一多层部分，设置在第一多层部分上方的第二多层部分; 以及包括具有正极性的第一端子和具有负极性的第二端子的电池，其中所述第一和第二多层部分中的每一个至少包括具有固定的磁化方向的第一磁性层，具有可逆的第二磁性层的第二磁性层磁化和设置在第一和第二磁性层之间的隔离层，第一和第二磁性层通过隔离层基本上相互反铁磁耦合，并且其中第一多层部分和部分多层部分耦合到电池的第一和第二端子。描述和示出了其他实施例。

23. 发明授权

US08790798B2 Magnetoresistive element and method of manufacturing the same 有权
标题翻译：磁阻元件及其制造方法
公开(公告)号：US08790798B2
公开(公告)日：2014-07-29
申请号：US13445840
申请日：2012-04-12
申请人： Alexander Mikhailovich Shukh
发明人： Alexander Mikhailovich Shukh
IPC分类号： G11B5/39 , H01L43/08 , G01R33/09 , H01L43/10 , H01L43/12 , G11C11/02
CPC分类号： G01R33/098 , G11B5/3906 , G11B5/3909 , G11C11/02 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T428/1114 , Y10T428/1143
摘要： A magnetoresistive element (and method of fabricating the magnetoresistive element) that includes a free ferromagnetic layer comprising a first reversible magnetization direction directed substantially perpendicular to a film surface, a pinned ferromagnetic layer comprising a second fixed magnetization direction directed substantially perpendicular to the film surface, and a nonmagnetic insulating tunnel barrier layer disposed between the free ferromagnetic layer and the pinned ferromagnetic layer, wherein the free ferromagnetic layer, the tunnel barrier layer, and the pinned ferromagnetic layer have a coherent body-centered cubic (bcc) structure with a (001) plane oriented, and a bidirectional spin-polarized current passing through the coherent structure in a direction perpendicular to the film surface reverses the magnetization direction of the free ferromagnetic layer.
摘要翻译：磁阻元件（以及制造磁阻元件的方法）包括自由铁磁层，该自由铁磁层包括基本上垂直于膜表面的第一可逆磁化方向，钉扎铁磁层，包括基本垂直于膜表面的第二固定磁化方向，以及设置在自由铁磁层和被钉扎铁磁层之间的非磁性绝缘隧道势垒层，其中自由铁磁层，隧道势垒层和钉扎铁磁层具有与（001）相邻的体心立方（bcc）结构）平面取向，并且在垂直于膜表面的方向上穿过相干结构的双向自旋极化电流使自由铁磁层的磁化方向反转。

24. 发明授权

US08758909B2 Scalable magnetoresistive element 有权
标题翻译：可扩展磁阻元件
公开(公告)号：US08758909B2
公开(公告)日：2014-06-24
申请号：US13452166
申请日：2012-04-20
申请人： Alexander Mikhailovich Shukh
发明人： Alexander Mikhailovich Shukh
IPC分类号： H01F10/08 , G11C11/02 , G11C11/15 , H01F10/14 , H01F10/16 , G01R33/09
CPC分类号： G11C11/02 , G01R33/098 , G11B5/3909 , G11C11/15 , H01F10/14 , H01F10/16 , H01L43/10 , Y10T428/1114 , Y10T428/1121 , Y10T428/1143
摘要： A magnetoresistive element that includes a free ferromagnetic layer comprising a reversible magnetization directed substantially perpendicular to a film surface, a pinned ferromagnetic layer comprising a fixed magnetization directed substantially perpendicular to the film surface, and a tunnel barrier layer disposed between the free and pinned ferromagnetic layers, wherein the free and pinned layers contain at least one element selected from the group consisting of Fe, Co, and Ni, at least one element selected from the group consisting of V, Cr, and Mo, and at least one element selected from the group consisting of B, P, C, and Si, and wherein the free layer, the tunnel barrier layer, and the pinned layer have a coherent body-centered cubic structure with a (001) plane oriented, and a bidirectional spin-polarized current passing through the coherent structure in a direction perpendicular to the film surface reverses a magnetization direction of the free layer.
摘要翻译：磁阻元件，其包括自由铁磁层，其包含基本上垂直于膜表面的可逆磁化强度，包括基本上垂直于膜表面的固定磁化强度的钉扎铁磁层以及设置在自由和固定的铁磁层之间的隧道势垒层其中，所述游离和被钉扎层含有选自Fe，Co和Ni中的至少一种元素，选自V，Cr和Mo中的至少一种元素，以及选自以下的至少一种元素：由B，P，C和Si组成的组，其中自由层，隧道势垒层和被钉扎层具有取向为（001）面的相干体心立方结构和双向自旋极化电流在垂直于膜表面的方向上穿过相干结构反转自由层的磁化方向。

25. 发明授权

US08411494B2 Three-dimensional magnetic random access memory with high speed writing 有权
标题翻译：具有高速写入的三维磁性随机存取存储器
公开(公告)号：US08411494B2
公开(公告)日：2013-04-02
申请号：US12837503
申请日：2010-07-16
申请人： Alexander Mikhailovich Shukh
发明人： Alexander Mikhailovich Shukh
IPC分类号： G11C11/00
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659
摘要： One embodiment of a magnetic random access memory includes a transistor formed on a substrate and having a gate width, a plurality of magnetoresistive elements disposed above the transistor and jointly electrically coupled to the transistor at their first terminals, a plurality of parallel conductive lines formed above magnetoresistive elements and independently electrically coupled to their second terminals. A magnetoresistive element includes, a pinned layer having a fixed magnetization direction, a free layer having a reversible magnetization direction, a tunnel barrier layer disposed between the free and pinned layers, and an element width that is substantially smaller than the gate width. The magnetization directions of the pinned and free layers are directed substantially perpendicular to the substrate. The magnetization direction of the free layer is reversed by a joint effect of a bias magnetic field and a spin-polarized current applied to the magnetoresistive element. Other embodiments are described and shown.
摘要翻译：磁性随机存取存储器的一个实施例包括形成在衬底上并具有栅极宽度的晶体管，设置在晶体管上方并在其第一端子处共同电耦合到晶体管的多个磁阻元件，在上面形成的多个平行导线磁阻元件并且独立地电耦合到它们的第二端子。磁阻元件包括具有固定磁化方向的固定层，具有可逆磁化方向的自由层，设置在自由层和被钉扎层之间的隧道势垒层以及基本上小于栅极宽度的元件宽度。被钉扎层和自由层的磁化方向基本上垂直于衬底。自由层的磁化方向由施加到磁阻元件的偏置磁场和自旋极化电流的联合效应而反转。描述和示出了其他实施例。

26. 发明申请

US20130078482A1 Scalable Magnetoresistive Element 有权
标题翻译：可扩展磁阻元件
公开(公告)号：US20130078482A1
公开(公告)日：2013-03-28
申请号：US13452166
申请日：2012-04-20
申请人： Alexander Mikhailovich Shukh
发明人： Alexander Mikhailovich Shukh
IPC分类号： G11B5/39
CPC分类号： G11C11/02 , G01R33/098 , G11B5/3909 , G11C11/15 , H01F10/14 , H01F10/16 , H01L43/10 , Y10T428/1114 , Y10T428/1121 , Y10T428/1143
摘要： A magnetoresistive element that includes a free ferromagnetic layer comprising a reversible magnetization directed substantially perpendicular to a film surface, a pinned ferromagnetic layer comprising a fixed magnetization directed substantially perpendicular to the film surface, and a tunnel barrier layer disposed between the free and pinned ferromagnetic layers, wherein the free and pinned layers contain at least one element selected from the group consisting of Fe, Co, and Ni, at least one element selected from the group consisting of V, Cr, and Mo, and at least one element selected from the group consisting of B, P, C, and Si, and wherein the free layer, the tunnel barrier layer, and the pinned layer have a coherent body-centered cubic structure with a (001) plane oriented, and a bidirectional spin-polarized current passing through the coherent structure in a direction perpendicular to the film surface reverses a magnetization direction of the free layer.
摘要翻译：磁阻元件，其包括自由铁磁层，其包含基本上垂直于膜表面的可逆磁化强度，包括基本上垂直于膜表面的固定磁化强度的钉扎铁磁层以及设置在自由和固定的铁磁层之间的隧道势垒层其中，所述游离和被钉扎层含有选自Fe，Co和Ni中的至少一种元素，选自V，Cr和Mo中的至少一种元素，以及选自以下的至少一种元素：由B，P，C和Si组成的组，其中自由层，隧道势垒层和被钉扎层具有取向为（001）面的相干体心立方结构和双向自旋极化电流在垂直于膜表面的方向上穿过相干结构反转自由层的磁化方向。

27. 发明申请

US20120155164A1 Multibit Cell of Magnetic Random Access Memory With Perpendicular Magnetization 有权
标题翻译：具有垂直磁化的磁随机存取存储器的多位元单元
公开(公告)号：US20120155164A1
公开(公告)日：2012-06-21
申请号：US12844475
申请日：2010-07-27
申请人： Alexander Mikhailovich Shukh
发明人： Alexander Mikhailovich Shukh
IPC分类号： G11C11/14 , H01L29/82
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1675 , G11C11/5607 , H01L27/228
摘要： A multi-bit cell of magnetic random access memory comprises a magnetic tunnel junction element including a first and second free layer comprising a changeable magnetization oriented substantially perpendicular to a layer plane in its equilibrium state and a switching current, a first and second tunnel barrier layer, and a pinned layer comprising a fixed magnetization oriented substantially perpendicular to a layer plane, the pinned layer is disposed between the first and second free layers and is separated from the free layers by one of the tunnel barrier layers, a selection transistor electrically connected to a word line, and a bit line intersecting the word line. The magnetic tunnel junction element is disposed between the bit line and the selection transistor and is electrically connected to the bit line and the selection transistor, wherein the first and second free layers have substantially different switching currents.
摘要翻译：磁性随机存取存储器的多比特单元包括磁性隧道结元件，其包括第一和第二自由层，所述第一和第二自由层包括基本上垂直于其平衡状态的层平面定向的可变磁化和开关电流，第一和第二隧道势垒层以及包括基本上垂直于层平面定向的固定磁化的钉扎层，所述钉扎层设置在所述第一和第二自由层之间，并且通过所述隧道势垒层中的一个与所述自由层分离，所述选择晶体管电连接到字线和与字线相交的位线。磁性隧道结元件设置在位线和选择晶体管之间，并且电连接到位线和选择晶体管，其中第一和第二自由层具有基本上不同的开关电流。

28. 发明申请

US20120105105A1 Nonvolatile Logic Circuit 有权
标题翻译：非易失逻辑电路
公开(公告)号：US20120105105A1
公开(公告)日：2012-05-03
申请号：US13283465
申请日：2011-10-27
申请人： Alexander Mikhailovich Shukh
发明人： Alexander Mikhailovich Shukh
IPC分类号： H03K19/0175
CPC分类号： H03K19/16 , H03K19/168
摘要： Semiconductor industry seeks to replace traditional volatile logic and memory devices with the improved nonvolatile devices. The increased demand for a significantly advanced, efficient, and nonvolatile data retention technique has driven the development of magnetic tunnel junctions (MTJs) employing a giant magneto-resistance (GMR). The present application relates to nonvolatile logic circuits with integrated MTJs and, in particular, concerns a nonvolatile spin dependent logic device that may be integrated with conventional semiconductor-based logic devices to construct the nonvolatile logic circuits performing NOT, NOR, NAND and other logic functions.
摘要翻译：半导体行业寻求用改进的非易失性器件替代传统的易失性逻辑和存储器件。对显着先进，高效和非易失性的数据保留技术的需求的增加推动了采用巨磁阻（GMR）的磁隧道结（MTJ）的发展。本申请涉及具有集成MTJ的非易失性逻辑电路，并且特别涉及可与常规的基于半导体的逻辑器件集成的非易失性自旋相关逻辑器件，以构建执行NOT，NOR，NAND和其它逻辑功能的非易失性逻辑电路。

29. 发明授权

US07369360B2 Perpendicular recording head having controlled permeability and saturation moment 失效
标题翻译：具有可控渗透率和饱和力矩的垂直记录头
公开(公告)号：US07369360B2
公开(公告)日：2008-05-06
申请号：US10982077
申请日：2004-11-05
申请人： Vladyslav Alexandrovich Vas'ko , Alexander Mikhailovich Shukh , Mark T. Kief , Eric W. Singleton
发明人： Vladyslav Alexandrovich Vas'ko , Alexander Mikhailovich Shukh , Mark T. Kief , Eric W. Singleton
IPC分类号： G11B5/147
CPC分类号： G11B5/3116 , G11B5/1278 , G11B5/3133
摘要： A method and apparatus having magnetic properties. The apparatus includes a main pole and a return pole spaced apart from the main pole. The return includes at least one multilayer block having a plurality of alternating layers of magnetic material and non-magnetic material. The return pole also includes a single magnetic material layer coupled to the at least one multilayer block. The magnetic material layer has a permeability that is greater than a permeability of the at least one multilayer block.
摘要翻译：具有磁性的方法和装置。该装置包括与主极间隔开的主极和返回杆。返回包括至少一个具有多个交替层的磁性材料和非磁性材料的多层块。返回极还包括联接到至少一个多层块的单个磁性材料层。磁性材料层的磁导率大于至少一个多层块的磁导率。

30. 发明申请

US20180096792A1 Magnetic Capacitor 审中-公开
公开(公告)号：US20180096792A1
公开(公告)日：2018-04-05
申请号：US15284542
申请日：2016-10-04
申请人： Alexander Mikhailovich Shukh
发明人： Alexander Mikhailovich Shukh
IPC分类号： H01G4/30 , H01G4/12 , H01G4/005
CPC分类号： H01G4/30 , H01G4/005 , H01G4/008 , H01G4/1218 , H01G4/1227 , H01G4/1272 , H01L28/56 , H01L28/75 , H01L43/08 , H01L43/10
摘要： An apparatus for storing an electrical energy comprising: a first conductive electrode, a second conductive electrode, an isolative layer disposed between the first and second conductive electrodes, a first magnetic layer disposed between the isolative layer and the first conductive electrode, and a second magnetic layer disposed between the isolative layer and the second conductive electrode, wherein the isolative layer comprising at least: a first sublayer having a band gap equal or more than 5 eV, and a second sublayer having the band gap less than 5 eV.

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