会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 23. 发明授权
    • Methods for forming improved self-assembled patterns of block copolymers
    • 形成改进的嵌段共聚物自组装图案的方法
    • US07820270B2
    • 2010-10-26
    • US12540440
    • 2009-08-13
    • Charles T. BlackRicardo RuizRobert L. Sandstrom
    • Charles T. BlackRicardo RuizRobert L. Sandstrom
    • C08L53/00C08L31/00C08L33/04C08L9/00C08L47/00B32B3/00B32B3/02
    • B81C1/00031B81C2201/0149B82Y30/00Y10S430/146Y10T428/24479Y10T428/24488Y10T428/2457Y10T428/2462
    • A method for forming self-assembled patterns on a substrate surface is provided. First, a block copolymer layer, which comprises a block copolymer having two or more immiscible polymeric block components, is applied onto a substrate that comprises a substrate surface with a trench therein. The trench specifically includes at least one narrow region flanked by two wide regions, and wherein the trench has a width variation of more than 50%. Annealing is subsequently carried out to effectuate phase separation between the two or more immiscible polymeric block components in the block copolymer layer, thereby forming periodic patterns that are defined by repeating structural units. Specifically, the periodic patterns at the narrow region of the trench are aligned in a predetermined direction and are essentially free of defects. Block copolymer films formed by the above-described method as well as semiconductor structures comprising such block copolymer films are also described.
    • 提供了一种在衬底表面上形成自组装图案的方法。 首先,将包含具有两个或更多个不混溶的聚合物嵌段组分的嵌段共聚物的嵌段共聚物层施加到包含其中具有沟槽的衬底表面的衬底上。 沟槽具体包括至少一个两个宽的区域的窄区域,并且其中沟槽具有大于50%的宽度变化。 随后进行退火以实现嵌段共聚物层中的两种或更多种不混溶的聚合物嵌段组分之间的相分离,从而形成由重复结构单元定义的周期性图案。 具体地说,在沟槽的窄区域的周期性图案在预定方向上排列,并且基本上没有缺陷。 还描述了通过上述方法形成的嵌段共聚物膜以及包含这种嵌段共聚物膜的半导体结构。
    • 28. 发明申请
    • METHOD FOR SEPARATELY PROCESSING REGIONS ON A PATTERNED MEDIUM
    • 在图形化介质上分离处理区域的方法
    • US20140072830A1
    • 2014-03-13
    • US13615131
    • 2012-09-13
    • Jeffrey S. LilleKurt A. RubinRicardo RuizLei Wan
    • Jeffrey S. LilleKurt A. RubinRicardo RuizLei Wan
    • G11B5/84G11B5/73B44C1/22
    • G11B5/855B81C1/00031G03F7/0035G11B5/743H01L21/0338Y10S977/888
    • The disclosure relates generally to a method for fabricating a patterned medium. The method includes providing a substrate with an exterior layer under a lithographically patterned surface layer, the lithographically patterned surface layer comprising a first pattern in a first region and a second pattern in a second region, applying a first masking material over the first region, transferring the second pattern into the exterior layer in the second region, forming self-assembled block copolymer structures over the lithographically patterned surface layer, the self-assembled block copolymer structures aligning with the first pattern in the first region, applying a second masking material over the second region, transferring the polymer block pattern into the exterior layer in the first region, and etching the substrate according to the second pattern transferred to the exterior layer in the second region and the polymer block pattern transferred to the exterior layer in the first region.
    • 本公开一般涉及一种用于制造图案化介质的方法。 该方法包括在光刻图案化的表面层下提供具有外部层的基底,光刻图案化的表面层包括第一区域中的第一图案和第二区域中的第二图案,在第一区域上施加第一掩蔽材料,转移 在第二区域中的第二图案进入外层,在光刻图案化表面层上形成自组装的嵌段共聚物结构,自组装嵌段共聚物结构与第一区域中的第一图案对准,在第一区域上施加第二掩模材料 第二区域,将聚合物嵌段图案转移到第一区域中的外部层中,并且根据转移到第二区域中的外部层的第二图案和在第一区域中转印到外部层的聚合物嵌段图案来蚀刻基板。