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    • 26. 发明授权
    • Method and device for sorting parcels
    • 用于分类包裹的方法和装置
    • US06888084B1
    • 2005-05-03
    • US10089554
    • 2000-08-08
    • Thomas Bayer
    • Thomas Bayer
    • B07C3/18B07C3/00B07C3/02B07C3/14G06K7/00B07C5/01G06K9/01
    • B07C3/14B07C3/00Y10S209/90
    • The invention relates to sorting items of mail in a plurality of sorting passes. In order not to have to read the address in each sorting pass and also not to have to print any machine-readable identification code on each item of mail, features characteristic of the items of mail are additionally determined during the first sorting pass and are stored together with distribution codes determined in the reading process. During the subsequent sorting passes only the characteristic features of the items of mail are measured and compared with the stored features. In the event of agreement, the item of mail is assigned the associated distribution code. A particular feed regime with defined orders ensures that in each case only n items of mail have to be compared, where n=maximum multiple delivery rate to be expected.
    • 本发明涉及在多个排序通道中分类邮件的项目。 为了不必在每个排序通行证中读取地址,也不必在每个邮件上打印任何机器可读的识别码,邮件项目的特征在第一次排序期间另外确定并被存储 以及在阅读过程中确定的分发代码。 在随后的排序过程中,仅测量邮件项目的特征,并与存储的特征进行比较。 在协议的情况下,邮件项目被分配相关的分发代码。 具有定义的订单的特定进料方式确保在每种情况下仅需要比较n个邮件项目,其中n =预期的最大多个发货率。
    • 29. 发明授权
    • Calibration standard for 2-D and 3-D profilometry in the sub-nanometer
range and method of producing it
    • 亚纳米范围内二维和三维轮廓测量的校准标准及其制作方法
    • US5960255A
    • 1999-09-28
    • US842307
    • 1997-04-24
    • Johann W. BarthaThomas BayerJohann GreschnerMartin Nonnenmacher, deceasedHelga Weiss
    • Johann W. BarthaThomas BayerJohann GreschnerMartin Nonnenmacher, deceasedHelga Weiss
    • B32B9/00G01B5/20G01Q60/00G01R31/26H01L21/00H01L21/311H01L21/66H01L21/76
    • G01Q40/02B82Y35/00Y10S438/975Y10S977/852Y10S977/878Y10T428/24926
    • A calibration standard comprises a supporting structure (1) of single crystal material with at least one pair of different kinds of structures consisting of a raised line (2) and a trench (3). These structures have the identical width in the range of about 500 nm. The single crystal material preferably is silicon with (110)-orientation. A method of producing the calibration standard comprises the steps: providing two polished wafers of the same single crystal material and with the same crystal orientation, forming an oxide layer on the polished surface of the first wafer, bonding the second wafer to the first oxidized wafer with the polished surfaces of the wafers facing each other, cutting the bonded structure transverse to the polished surfaces, selectively etching both the wafers to a defined depth to expose a portion of the oxide layer, masking the portions of the oxide layer now representing the raised line (2) and selectively etching the oxide layer in the unmasked areas to a defined depth to form the trench (3). The calibration standard overcomes the problem of measuring the diameter of an ultrafine tip for AFM/STM profilometry in the sub-nanometer range.
    • 校准标准包括具有由凸起线(2)和沟槽(3)组成的至少一对不同种类的结构的单晶材料的支撑结构(1)。 这些结构具有在约500nm范围内相同的宽度。 单晶材料优选为具有(110)取向的硅。 一种生产校准标准的方法包括以下步骤:提供相同单晶材料的两个抛光晶片并具有相同的晶体取向,在第一晶片的抛光表面上形成氧化物层,将第二晶片接合到第一氧化晶片 其中晶片的抛光表面彼此面对,切割与抛光表面横向的结合结构,选择性地将两个晶片刻蚀到限定的深度以暴露氧化物层的一部分,掩盖现在代表凸起的氧化物层的部分 线(2),并且将未掩模区域中的氧化物层选择性蚀刻到限定的深度以形成沟槽(3)。 校准标准克服了在亚纳米范围内测量AFM / STM轮廓测量法的超细尖端直径的问题。