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21. 发明授权

US06960509B1 Method of fabricating three dimensional gate structure using oxygen diffusion 有权
标题翻译：使用氧气扩散制造三维栅极结构的方法
公开(公告)号：US06960509B1
公开(公告)日：2005-11-01
申请号：US10883182
申请日：2004-06-30
申请人： Sang-In Han , Kurt W. Eisenbeiser , Bing Lu
发明人： Sang-In Han , Kurt W. Eisenbeiser , Bing Lu
IPC分类号： H01L21/316 , H01L21/336 , H01L21/338 , H01L21/84 , H01L29/786
CPC分类号： H01L29/785 , H01L21/31662 , H01L29/66818
摘要： The present invention provides a method of fabricating a silicon fin useful in preparing FinFET type semiconductor structures. The method is particularly useful for creating fins with a width and smoothness appropriate for sub-50 nm type gates. The method begins with a silicon fin prepared by lithographic means from an SOI type structure such that the fin is larger in dimension, particularly width, than is desired in the final fin. If desired the silicon fin can include a nitride cap. A conformal diffusion layer, such as of silicon dioxide, is then deposited onto the fin and silicon dioxide substrate. A PECVD deposition using TEOS gas is one method to deposit the diffusion layer. The coated fin is then heated and exposed to oxygen. The oxygen diffuses through the diffusion layer and converts a portion of the silicon material to silicon dioxide. This oxidation continues until a desired amount of silicon material is converted to SiO2 such that the remaining silicon has the desired dimensions. The silicon fin is then exposed through wet etching steps that remove the silicon dioxide coating.
摘要翻译：本发明提供一种制造用于制备FinFET型半导体结构的硅鳍的方法。该方法对于产生适合于50nm以下类型的门的宽度和平滑度的翅片特别有用。该方法从由SOI型结构的光刻装置制备的硅片开始，使得翅片的尺寸更大，特别是在最终鳍片中所需的宽度。如果需要，硅翅片可以包括氮化物盖。然后将诸如二氧化硅的共形扩散层沉积到翅片和二氧化硅衬底上。使用TEOS气体的PECVD沉积是沉积扩散层的一种方法。然后将涂覆的翅片加热并暴露于氧气。氧扩散通过扩散层并将一部分硅材料转化为二氧化硅。该氧化继续进行，直到所需量的硅材料转化为SiO 2，使得剩余的硅具有所需的尺寸。然后通过去除二氧化硅涂层的湿蚀刻步骤将硅片暴露。

22. 发明授权

US06887817B2 Olefin polymerization catalyst and process for preparing polyolefins using said catalyst 有权
标题翻译：烯烃聚合催化剂和使用所述催化剂制备聚烯烃的方法
公开(公告)号：US06887817B2
公开(公告)日：2005-05-03
申请号：US10649206
申请日：2003-08-27
申请人： Bing Lu , Honglan Lu , Chih-Jian Chen
发明人： Bing Lu , Honglan Lu , Chih-Jian Chen
IPC分类号： C08F4/658 , C08F10/00 , C08F110/02 , C08F210/16 , B01J31/00
CPC分类号： C08F10/00 , C08F110/02 , C08F210/16 , C08F4/651 , C08F4/6555 , C08F2500/12 , C08F2500/18 , C08F2500/07 , C08F210/14
摘要： An olefin polymerization catalyst is described which includes: (A) a solid catalyst component being prepared by copulverizing a magnesium compound, an aluminum compound, an electron donor and a titanium compound, and (B) an organoaluminum compound. The present invention is also directed to a process for preparing polyolefins using the aforesaid catalyst system to polymerize olefins.
摘要翻译：描述了一种烯烃聚合催化剂，其包括：（A）通过共混镁化合物，铝化合物，电子给体和钛化合物制备的固体催化剂组分和（B）有机铝化合物。本发明还涉及使用上述催化剂体系制备聚烯烃以聚合烯烃的方法。

23. 发明申请

US20120262927A1 MOLDED REFLECTORS FOR LIGHT-EMITTING DIODE ASSEMBLIES 有权
标题翻译：用于发光二极管组件的模制反射器
公开(公告)号：US20120262927A1
公开(公告)日：2012-10-18
申请号：US13086763
申请日：2011-04-14
申请人： Bing Lu
发明人： Bing Lu
IPC分类号： F21V7/00 , C09K19/52 , G02F1/361
CPC分类号： F21V7/22 , C08K3/013 , C08L23/0884 , C08L25/14 , C08L27/18 , C08L63/00 , C08L67/02 , C08L71/10 , F21V7/0066 , F21Y2101/00 , F21Y2115/10 , H01L2224/48247 , H01L2224/48257 , C08K3/0033
摘要： Polymer compositions are described containing a poly(1,4-cyclohexanedimethanol terephthalate) polymer in combination with a white pigment and optionally one or more reinforcing fillers. In accordance with the present disclosure, the composition also contains one or more reactive viscosity stabilizers. In order to prevent against yellowing, the composition is free of various aromatic epoxy resins, such as novolac epoxy resins. The polymer composition has excellent reflectance properties making the composition well suited for producing reflectors for light sources, such as LED assemblies.
摘要翻译：描述了包含聚（1,4-环己烷二甲醇对苯二甲酸酯）聚合物与白色颜料和任选的一种或多种增强填料组合的聚合物组合物。根据本公开内容，组合物还含有一种或多种反应性粘度稳定剂。为了防止黄变，该组合物不含各种芳族环氧树脂，例如酚醛环氧树脂。聚合物组合物具有优异的反射性能，使组合物非常适合于生产诸如LED组件的光源反射器。

24. 发明申请

US20120262925A1 MOLDED REFLECTIVE STRUCTURES FOR LIGHT-EMITTING DIODES 有权
标题翻译：用于发光二极管的模制反射结构
公开(公告)号：US20120262925A1
公开(公告)日：2012-10-18
申请号：US13086862
申请日：2011-04-14
申请人： Bing Lu
发明人： Bing Lu
IPC分类号： F21V7/06 , F21V7/22 , F21V7/00
CPC分类号： H01L33/60 , H01L33/486 , H01L33/501 , H01L33/507 , H01L2224/48095 , H01L2224/48247 , H01L2224/48257
摘要： The present disclosure is directed to a molded reflective structure for a light source, which may be a light-emitting diode (“LED”). The structure includes a reflector which defines a cavity therein. The cavity is surrounded by at least one reflective side wall, and has a greatest dimension of less than about 50 mm. The at least one reflective side wall further has an initial reflectance at 460 nm of greater than about 85% and an initial whiteness index of greater than about 80. The reflector is made from a thermoplastic polymer composition that contains a material such that the at least one reflective side wall absorbs light in the ultraviolet and violet region of the electromagnetic spectrum and re-emits light in the blue region.
摘要翻译：本公开涉及一种用于光源的模制反射结构，其可以是发光二极管（LED）。该结构包括在其中限定空腔的反射器。空腔被至少一个反射侧壁包围，并且具有小于约50mm的最大尺寸。所述至少一个反射侧壁还具有大于约85％的460nm处的初始反射率和大于约80的初始白度指数。所述反射器由热塑性聚合物组合物制成，所述热塑性聚合物组合物含有至少一个反射侧壁吸收电磁光谱的紫外线和紫色区域的光，并在蓝色区域再发光。

25. 发明申请

US20110090725A1 Systems and Methods of Synchronous Rectifier Control 审中-公开
标题翻译：同步整流器控制系统与方法
公开(公告)号：US20110090725A1
公开(公告)日：2011-04-21
申请号：US12582666
申请日：2009-10-20
申请人： Bing Lu
发明人： Bing Lu
IPC分类号： H02M7/217
CPC分类号： H02M3/1588 , Y02B70/1425 , Y02B70/1466
摘要： Systems and methods for synchronous rectifier control are provided. A synchronous rectifier includes parasitic drain inductance and parasitic source inductance. Compensation inductance is introduced to offset the effects of parasitic inductance. Compensation inductance may be formed from the trace inductance on the semiconductor die. In certain semiconductor packages, the parasitic inductance may be substantially fixed such that the layout can be modified to generate fixed compensation inductance.
摘要翻译：提供了同步整流器控制的系统和方法。同步整流器包括寄生漏极电感和寄生源电感。引入补偿电感来抵消寄生电感的影响。补偿电感可以由半导体管芯上的迹线电感形成。在某些半导体封装中，寄生电感可以基本上固定，使得可以修改布局以产生固定的补偿电感。

26. 发明授权

US07074527B2 Method for fabricating a mask using a hardmask and method for making a semiconductor device using the same 失效
标题翻译：使用硬掩模制造掩模的方法和使用其制造半导体器件的方法
公开(公告)号：US07074527B2
公开(公告)日：2006-07-11
申请号：US10668432
申请日：2003-09-23
申请人： Bing Lu , James R. Wasson
发明人： Bing Lu , James R. Wasson
IPC分类号： G01F9/00
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/24
摘要： A bilayer hardmask 26 is used to manufacture a mask 10, which is can be implemented to pattern a resist 165 on a semiconductor wafer 150. In one embodiment, the bilayer hardmask 26 has two layers: a first hardmask layer 28 and a second hardmask layer 30. The first hardmask layer 28 may be carbon and can be etched selective to the overlying second hardmask layer 30 and an underlying absorber structure 20. In one embodiment, the second hardmask layer 30 is a transparent layer of SiON, SiN, or SiO2. The bilayer hardmask 26 allows for a thinner resist to be used during fabrication of the mask 10.
摘要翻译：双层硬掩模26用于制造掩模10，其可以被实现为在半导体晶片150上图案化抗蚀剂165。在一个实施例中，双层硬掩模26具有两层：第一硬掩模层28和第二硬掩模层30。第一硬掩模层28可以是碳，并且可以对上覆的第二硬掩模层30和下面的吸收体结构20进行蚀刻选择性。在一个实施例中，第二硬掩模层30是SiON，SiN或SiO 2的透明层。双层硬掩模26允许在制造掩模10期间使用更薄的抗蚀剂。

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