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    • 25. 发明申请
      US20080199994A1 Method of Producing Semiconductor Device and Semiconductor Device 有权
    • Method of Producing Semiconductor Device and Semiconductor Device
    • 生产半导体器件和半导体器件的方法
    • US20080199994A1
    • 2008-08-21
    • US11622642
    • 2007-01-12
    • Yuko Ohgishi
    • Yuko Ohgishi
    • H01L21/8242 , H01L21/8234
    • H01L21/823462 , H01L21/82345
    • A semiconductor device able to secure electrical effective thicknesses required for insulating films of electronic circuit elements by using depletion of electrodes of the electronic circuit elements even if the physical thicknesses of the insulating films are not different, where gate electrodes of high withstand voltage use transistors to which high power source voltages are supplied contain an impurity at a relatively low concentration, so the gate electrodes are easily depleted at the time of application of the gate voltage; depletion of the gate electrodes is equivalent to increasing the thickness of the gate insulating films; the electrical effective thicknesses required of the gate insulating films can be made thicker; and the gate electrodes of high performance transistors for which a high speed and large drive current are required do not contain an impurity at a high concentration where depletion of the gate electrodes will not occur, so the electrical effective thickness of the gate insulating films is kept thin.
    • 即使绝缘膜的物理厚度不同，即使使用高电压的栅电极也使用晶体管的电极，也能够通过使用电子电路元件的电极的耗尽来确保电子电路元件的绝缘膜所需的电气有效厚度的半导体器件 提供高电源电压的杂质含有较低浓度的杂质，因此在施加栅极电压时，栅电极容易耗尽; 栅电极的耗尽等于增加栅极绝缘膜的厚度; 可以使栅极绝缘膜所需的电气有效厚度更厚; 并且需要高速度和大驱动电流的高性能晶体管的栅电极不含有不会发生栅极电极耗尽的高浓度的杂质，所以栅极绝缘膜的电有效厚度保持 瘦。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Global Dossier Espacenet 法律信息 同族专利 专利引用
    • 26. 发明授权
      US07205619B2 Method of producing semiconductor device and semiconductor device 有权
    • Method of producing semiconductor device and semiconductor device
    • 半导体器件和半导体器件的制造方法
    • US07205619B2
    • 2007-04-17
    • US10806588
    • 2004-03-23
    • Yuko Ohgishi
    • Yuko Ohgishi
    • H01L29/94
    • H01L21/823462 , H01L21/82345
    • A semiconductor device able to secure electrical effective thicknesses required for insulating films of electronic circuit elements by using depletion of electrodes of the electronic circuit elements even if the physical thicknesses of the insulating films are not different, where gate electrodes of high withstand voltage use transistors to which high power source voltages are supplied contain an impurity at a relatively low concentration, so the gate electrodes are easily depleted at the time of application of the gate voltage; depletion of the gate electrodes is equivalent to increasing the thickness of the gate insulating films; the electrical effective thicknesses required of the gate insulating films can be made thicker; and the gate electrodes of high performance transistors for which a high speed and large drive current are required do not contain an impurity at a high concentration where depletion of the gate electrodes will not occur, so the electrical effective thickness of the gate insulating films is kept thin.
    • 即使绝缘膜的物理厚度不同，即使使用高电压的栅电极也使用晶体管的电极，也能够通过使用电子电路元件的电极的耗尽来确保电子电路元件的绝缘膜所需的电气有效厚度的半导体器件 提供高电源电压的杂质含有较低浓度的杂质，因此在施加栅极电压时，栅电极容易耗尽; 栅电极的耗尽等于增加栅极绝缘膜的厚度; 可以使栅极绝缘膜所需的电气有效厚度更厚; 并且需要高速度和大驱动电流的高性能晶体管的栅极电极不含有不会发生栅电极耗尽的高浓度的杂质，所以栅极绝缘膜的电有效厚度保持 瘦。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Espacenet 法律信息 同族专利 专利引用
    • 28. 发明授权
      US07560341B2 Semiconductor device and manufacturing method therefor 有权
    • Semiconductor device and manufacturing method therefor
    • 半导体装置及其制造方法
    • US07560341B2
    • 2009-07-14
    • US11624346
    • 2007-01-18
    • Yuko Ohgishi
    • Yuko Ohgishi
    • H01L21/00
    • H01L29/4916 , H01L27/0629
    • The gate electrode of a high-voltage transistor having a high breakdown voltage is formed from a polysilicon layer having a larger average grain size, so that depletion of the gate electrode easily occurs. By utilizing this depletion, the electrical effective film thickness required by the gate dielectric film of the transistor can be increased. In contrast, the gate electrode of a high-performance transistor needs to have a high speed and a large drive current is formed from a polysilicon layer having a smaller average grain size, so that depletion of the gate electrode hardly occurs. Accordingly, the electrical effective film thickness of the gate dielectric film of the transistor can be maintained at a small value.
    • 具有高击穿电压的高压晶体管的栅电极由平均晶粒尺寸较大的多晶硅层形成，从而易于发生栅电极的耗尽。 通过利用这种耗尽，可以增加晶体管的栅极电介质膜所需的电学有效膜厚度。 相反，高性能晶体管的栅电极需要高速度，并且由具有较小平均晶粒尺寸的多晶硅层形成较大的驱动电流，从而几乎不发生栅电极的耗尽。 因此，晶体管的栅极电介质膜的电气有效膜厚度可以保持在较小的值。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Espacenet 法律信息 同族专利 专利引用
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