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21. 发明授权

US07824784B2 Composition for low dielectric material, low dielectric material and method for production thereof 失效
标题翻译：用于低介电材料，低介电材料的组合物及其制备方法
公开(公告)号：US07824784B2
公开(公告)日：2010-11-02
申请号：US12327117
申请日：2008-12-03
申请人： Teruhiko Kumada , Hideharu Nobutoki , Tetsuya Yamamoto , Takuya Kamiyama
发明人： Teruhiko Kumada , Hideharu Nobutoki , Tetsuya Yamamoto , Takuya Kamiyama
IPC分类号： B05D1/00 , B32B9/00
CPC分类号： H01L21/02112 , H01L21/02118 , H01L21/02255 , H01L21/02282 , H01L21/312 , H01L21/318 , Y10T428/31504
摘要： A low dielectric material is produced by using a composition including a borazine ring-containing compound and a compound represented by the following formula as a solvent, and/or by annealing a composition comprising a borazine ring-containing compound under atmosphere of oxygen concentration not higher than 0.1 vol % at 200 to 600° C. In the following formula, Ra and Rc independently represent alkyl group or acyl group; Rb represents hydrogen atom or alkyl group; and n represents an integer of 1 to 5.
摘要翻译：通过使用包含含环硼氮环的化合物和下式表示的化合物作为溶剂的组合物和/或通过在氧浓度不高的气氛下退火含有环硼氮烷环化合物的组合物来制备低介电材料在200〜600℃下为0.1vol％以下。在下式中，Ra和Rc独立地表示烷基或酰基。 Rb表示氢原子或烷基; n表示1〜5的整数。

22. 发明授权

US07030007B2 Via-filling material and process for fabricating semiconductor integrated circuit using the material 失效
标题翻译：通孔填充材料和使用该材料的半导体集成电路的制造工艺
公开(公告)号：US07030007B2
公开(公告)日：2006-04-18
申请号：US10623772
申请日：2003-07-22
申请人： Teruhiko Kumada , Toshiyuki Toyoshima , Hideharu Nobutoki , Takeo Ishibashi , Yoshiharu Ono , Junjiro Sakai
发明人： Teruhiko Kumada , Toshiyuki Toyoshima , Hideharu Nobutoki , Takeo Ishibashi , Yoshiharu Ono , Junjiro Sakai
IPC分类号： H01L21/47
CPC分类号： H01L21/76808 , H01L21/02118 , H01L21/0212 , H01L21/02282 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/312 , H01L21/3127 , H01L21/76814
摘要： A via-filling material includes a polymer containing a repeating unit represented by wherein R1 one of hydrogen, fluorine, chlorine, bromine, and methyl group; R2 is one of hydrogen, a C1-3 alkyl group, and a C1-4 alkyl group in which the hydrogen is replaced by at least one of fluorine, chlorine, and bromine; and X is —C(═O)O— or —S(═O)2O—. This via-filling material does not generate deposits around an opening of a via hole during plasma etching and provides a semiconductor integrated circuit with high reliability, even when a trench wider than the via hole is formed by plasma etching around the via hole filled with the via-filling material.
摘要翻译：通孔填充材料包括含有由氢，氟，氯，溴和甲基中的R 1〜1个表示的重复单元的聚合物; R 2是氢，C 1-3烷基和被取代氢的C 1-4烷基中的一个通过氟，氯和溴中的至少一种; 并且X是-C（-O）O-或-S（-O）2 O-。这种通孔填充材料在等离子体蚀刻期间不会在通孔的开口附近产生沉积物，并且提供具有高可靠性的半导体集成电路，即使当通过等离子体蚀刻形成通孔以外的沟槽时，通孔周围填充有通孔通孔填充材料。

23. 发明申请

US20050101123A1 Via-filling material and process for fabricating semiconductor integrated circuit using the material 失效
标题翻译：通孔填充材料和使用该材料制造半导体集成电路的工艺
公开(公告)号：US20050101123A1
公开(公告)日：2005-05-12
申请号：US10623772
申请日：2003-07-22
申请人： Teruhiko Kumada , Toshiyuki Toyoshima , Hideharu Nobutoki , Takeo Ishibashi , Yoshiharu Ono , Junjiro Sakai
发明人： Teruhiko Kumada , Toshiyuki Toyoshima , Hideharu Nobutoki , Takeo Ishibashi , Yoshiharu Ono , Junjiro Sakai
IPC分类号： C08L33/04 , C08F20/22 , C08L63/00 , H01L21/311 , H01L21/312 , H01L21/768 , H01L21/44 , H01L21/4763
CPC分类号： H01L21/76808 , H01L21/02118 , H01L21/0212 , H01L21/02282 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/312 , H01L21/3127 , H01L21/76814
摘要： A via-filling material includes a polymer containing a repeating unit represented by wherein R1 one of hydrogen, fluorine, chlorine, bromine, and methyl group; R2 is one of hydrogen, a C1-3 alkyl group, and a C1-4 alkyl group in which the hydrogen is replaced by at least one of fluorine, chlorine, and bromine; and X is —C(═O)O or —S(═O)2O—. This via-filling material does not generate deposits around an opening of a via hole during plasma etching and provides a semiconductor integrated circuit with high reliability, even when a trench wider than the via hole is formed by plasma etching around the via hole filled with the via-filling material.
摘要翻译：通孔填充材料包括含有由氢，氟，氯，溴和甲基中的R 1〜1个表示的重复单元的聚合物; R 2是氢，C 1-3烷基和被取代氢的C 1-4烷基中的一个通过氟，氯和溴中的至少一种; 并且X是-C（-O）O或-S（-O）2 O-。这种通孔填充材料在等离子体蚀刻期间不会在通孔的开口附近产生沉积物，并且提供具有高可靠性的半导体集成电路，即使当通过等离子体蚀刻形成通孔以外的沟槽时，通孔周围填充有通孔通孔填充材料。

24. 发明申请

US20060091382A1 Low dielectric constant material having thermal resistance, insulation film between semiconductor layers using the same, and semiconductor device 有权
公开(公告)号：US20060091382A1
公开(公告)日：2006-05-04
申请号：US11294412
申请日：2005-12-06
申请人： Sei Tsunoda , Hideharu Nobutoki , Noboru Mikami
发明人： Sei Tsunoda , Hideharu Nobutoki , Noboru Mikami
IPC分类号： H01L29/08
CPC分类号： H01L21/02118 , H01L21/314 , H01L21/318
摘要： There is provided a low dielectric constant material, which is excellent in thermal resistance, has low dielectric constant, and is applicable to a semiconductor device or electric appliances, an insulation film between semiconductor layers using the same, and the semiconductor device. The material is the low dielectric constant material having thermal resistance, which contains borazine skeletal molecules shown by the following formula (1) and the like in an inorganic or organic material molecule.

25. 发明授权

US07029605B2 Low dielectric constant material having thermal resistance, insulation film between semiconductor layers using the same, and semiconductor device 有权
公开(公告)号：US07029605B2
公开(公告)日：2006-04-18
申请号：US09942626
申请日：2001-08-31
申请人： Sei Tsunoda , Hideharu Nobutoki , Noboru Mikami
发明人： Sei Tsunoda , Hideharu Nobutoki , Noboru Mikami
IPC分类号： H01B3/00 , B32B9/04 , B32B27/28 , H01L21/31
CPC分类号： H01L21/02112 , H01L21/314 , H01L29/51 , H01L2924/0002 , Y10T428/31504 , Y10T428/31515 , H01L2924/00
摘要： There is provided a low dielectric constant material, which is excellent in thermal resistance, has low dielectric constant, and is applicable to a semiconductor device or electric appliances, an insulation film between semiconductor layers using the same, and the semiconductor device. The material is the low dielectric constant material having thermal resistance, which contains borazine skeletal molecules shown by the following formula (1) and the like in an inorganic or organic material molecule.

26. 发明授权

US06704663B2 Method of calculating magnetic interaction of molecules using localized magnetic orbital 失效
标题翻译：使用局部磁轨道计算分子磁相互作用的方法
公开(公告)号：US06704663B2
公开(公告)日：2004-03-09
申请号：US10279913
申请日：2002-10-25
申请人： Hideharu Nobutoki , Suguru Nagae
发明人： Hideharu Nobutoki , Suguru Nagae
IPC分类号： G06F1900
CPC分类号： G01N27/72
摘要： A magnetic interaction is calculated by expressing a localized magnetic orbital as a linear combination of molecular orbitals and determining a localized magnetic orbital to be calculated from a maximum overlap condition evaluated between a reference orbital localized in anatomic orbital and the localized magnetic orbital. Another magnetic interaction is calculated by expressing a localized magnetic crystal orbital as a linear combination of crystal orbitals and determining a localized magnetic crystal orbital to be calculated from the maximum overlap condition.
摘要翻译：通过表示作为分子轨道的线性组合的局部磁轨道来计算磁相互作用，并且根据在解剖轨道中定位的参考轨道与局部磁轨道之间评估的最大重叠条件来确定局部磁轨道来计算。通过将局部磁性晶体轨道表示为晶体轨道的线性组合并根据最大重叠条件确定局部磁晶轨道来计算另一磁相互作用。

27. 发明授权

US5844820A Method for simulating properties of material having periodically repeated structure and systems utilizing the same 失效
标题翻译：用于模拟具有周期性重复结构的材料的性质的方法和利用其的系统
公开(公告)号：US5844820A
公开(公告)日：1998-12-01
申请号：US786790
申请日：1997-01-21
申请人： Hideharu Nobutoki
发明人： Hideharu Nobutoki
IPC分类号： H01L39/00 , G06F17/50 , H01L29/00 , G06G7/48
CPC分类号： G06F17/5018 , Y10S706/919 , Y10S706/92
摘要： A simulation method and design systems are provided for simulating and analyzing the properties of a periodically structured material such as a semiconductor or a superconductor to develop a novel periodically structured material. In the simulation method of the present invention, an overlap integral between Bloch functions, .psi..sub.m (k.sub.A) and .psi..sub.i (k.sub.B), for two adjacent wave number vectors, k.sub.A and k.sub.B, in Brillouin zone is found as S.sub.im = whereby a matching degree in terms of symmetrical nature of the Bloch functions, .psi..sub.m (k.sub.A) and .psi..sub.i (k.sub.B), can be quantitatively estimated. Accordingly, if the band array operation matrix, ##EQU1## is diagonalized to find an eigenvalue, .gamma..sub.p and an eigenvector, U.sub.np, then there can be found from .gamma..sub.p and U.sub.np the Bloch functions in a one-to-one relation with two adjacent wave number vectors, k.sub.A and k.sub.B : ##EQU2## and energy bands in one-to-one relation with each wave number vector.
摘要翻译：提供了一种模拟方法和设计系统，用于模拟和分析周期性结构材料（例如半导体或超导体）的性质，以开发出新颖的周期性结构材料。在本发明的模拟方法中，布里渊区域中两个相邻波数矢量kA和kB的Bloch函数，psi m（kA）和psi i（kB）之间的重叠积分被找到为Sim = （kB）| psi m（kA）>，从而可以定量地估计布洛赫函数的对称性质psi m（kA）和psi i（kB）的匹配度。因此，如果带阵列运算矩阵，γp和特征向量Unp，则可以从两个相邻波数向量kA和kB以一对一关系的γp和Unp布洛赫函数中找到：和每个波数向量一对一关系的能带。

28. 发明授权

US5500537A Field-effect transistor with at least two different semiconductive organic channel compounds 失效
标题翻译：具有至少两种不同半导体有机通道化合物的场效应晶体管
公开(公告)号：US5500537A
公开(公告)日：1996-03-19
申请号：US372219
申请日：1993-07-30
申请人： Akira Tsumura , Hiroyuki Fuchigami , Hideharu Nobutoki , Hiroshi Koezuka
发明人： Akira Tsumura , Hiroyuki Fuchigami , Hideharu Nobutoki , Hiroshi Koezuka
IPC分类号： G02F1/136 , G02F1/1368 , H01L29/78 , H01L29/786 , H01L51/00 , H01L51/05 , H01L51/30 , H01L35/24
CPC分类号： H01L51/0035 , H01L51/0036 , H01L51/0516 , H01L51/0566 , H01L51/0043 , H01L51/0541 , H01L51/0545
摘要： A field effect transistor has a channel between a source electrode and a drain electrode made from an organic semiconductor. In one form of the invention, the channel is a mixture of at least two different organic compounds. In another form of the invention, the channel is a lamination of at least two films of different organic compounds. The channel can also be a .pi.-conjugated block copolymer of at least two different types of monomers.
摘要翻译：场效应晶体管具有由有机半导体制成的源电极和漏电极之间的沟道。在本发明的一种形式中，通道是至少两种不同有机化合物的混合物。在本发明的另一种形式中，通道是至少两层不同有机化合物的层压。该通道也可以是至少两种不同类型的单体的π-共轭嵌段共聚物。

29. 发明授权

US07192540B2 Low dielectric constant material having thermal resistance, insulation film between semiconductor layers using the same, and semiconductor device 有权
标题翻译：具有耐热性的低介电常数材料，使用其的半导体层之间的绝缘膜和半导体器件
公开(公告)号：US07192540B2
公开(公告)日：2007-03-20
申请号：US11294412
申请日：2005-12-06
申请人： Sei Tsunoda , Hideharu Nobutoki , Noboru Mikami
发明人： Sei Tsunoda , Hideharu Nobutoki , Noboru Mikami
IPC分类号： H01B1/02 , H01B1/06 , C08G79/08 , C01B35/00
CPC分类号： H01L21/02118 , H01L21/314 , H01L21/318
摘要： There is provided a low dielectric constant material, which is excellent in thermal resistance, has low dielectric constant, and is applicable to a semiconductor device or electric appliances, an insulation film between semiconductor layers using the same, and the semiconductor device. The material is the low dielectric constant material having thermal resistance, which contains borazine skeletal molecules shown by the following formula (1) and the like in an inorganic or organic material molecule.
摘要翻译：提供一种低介电常数材料，其耐热性优异，介电常数低，并且可应用于半导体器件或电器，使用其的半导体层之间的绝缘膜和半导体器件。该材料是具有耐热性的低介电常数材料，其在无机或有机材料分子中含有下式（1）所示的硼嗪骨架分子。

30. 发明授权

US07175718B2 Rare earth element permanent magnet material 有权
标题翻译：稀土元素永磁材料
公开(公告)号：US07175718B2
公开(公告)日：2007-02-13
申请号：US10415273
申请日：2001-06-19
申请人： Hideharu Nobutoki , Suguru Nagae , Satoru Hayasi
发明人： Hideharu Nobutoki , Suguru Nagae , Satoru Hayasi
IPC分类号： H01F1/057
CPC分类号： C22C38/001 , C22C38/002 , C22C38/005 , C22C38/10 , C22C38/16 , H01F1/057 , H01F1/0577 , H01F1/059
摘要： A material for a rare earth permanent magnet having a high magnetic coercive force and a high residual magnetic flux density. 28 to 35% by weight of at least one rare earth element selected from the group consisting of neodymium, praseodymium, dysprosium, terbium, and holmium, 0.9 to 1.3% by weight of boron, 0.25 to 3% by weight of phosphorus, iron, and inevitable impurities. It can further comprise 0.1 to 3.6% by weight of cobalt and 0.02 to 0.25% by weight of copper.
摘要翻译：一种具有高磁矫顽力和高残余磁通密度的稀土永磁体材料。 28至35重量％的至少一种选自钕，镨，镝，铽和钬的稀土元素，0.9至1.3重量％的硼，0.25-3重量％的磷，铁，和不可避免的杂质。它还可以包含0.1至3.6重量％的钴和0.02至0.25重量％的铜。

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