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    • 21. 发明授权
    • Color liquid crystal display device and manufacturing method of the same
    • 彩色液晶显示装置及其制造方法
    • US07041522B2
    • 2006-05-09
    • US11028310
    • 2005-01-04
    • Hiroaki TanakaMichiaki SakamotoTakahiko WatanabeYoshiaki HashimotoSyuusaku Kido
    • Hiroaki TanakaMichiaki SakamotoTakahiko WatanabeYoshiaki HashimotoSyuusaku Kido
    • H01L21/00
    • G02F1/136209G02F1/136227G02F2001/136236
    • In a manufacturing method of a color liquid crystal display device, a first conductive film is formed on a transparent insulating substrate to form a gate electrode and a gate bus line (first PR process). A gate insulating film, a semiconductor layer, an ohmic layer, and a second conductive film are deposited to form an island of a thin film transistor and a drain bus line (second PR process). Then, color filters in respective three colors are formed in their respective predetermined regions on the transparent insulating substrate in succession (third through fifth PR processes). A black matrix is formed, and a drain electrode and a source electrode are formed in the island by removing the second conductive film and ohmic layer on a region corresponding to the channel region by using the black matrix as a mask (sixth PR process). Then, a planarization film and a pixel electrode are formed (seventh and eighth PR processes).
    • 在彩色液晶显示装置的制造方法中,在透明绝缘基板上形成第一导电膜,形成栅电极和栅极总线(第一PR处理)。 沉积栅极绝缘膜,半导体层,欧姆层和第二导电膜以形成薄膜晶体管和漏极总线(第二PR处理)的岛。 然后,在透明绝缘基板上的各自的预定区域中连续形成三种颜色的滤色器(第三至第五PR处理)。 通过使用黑矩阵作为掩模(第六PR处理),通过去除与沟道区对应的区域上的第二导电膜和欧姆层,在岛中形成漏极和源电极。 然后,形成平坦化膜和像素电极(第七和第八PR处理)。
    • 23. 发明授权
    • Liquid crystal display with filter and light shield separated from contact hole
    • 液晶显示屏带有过滤器和遮光罩与接触孔分开
    • US06429916B1
    • 2002-08-06
    • US09459010
    • 1999-12-10
    • Shinichi NakataYuji YamamotoMamoru OkamotoMichiaki SakamotoTakahiko WatanabeHirofumi IharaHironori KikkawaMuneo Maruyama
    • Shinichi NakataYuji YamamotoMamoru OkamotoMichiaki SakamotoTakahiko WatanabeHirofumi IharaHironori KikkawaMuneo Maruyama
    • G02F11335
    • G02F1/136227G02F1/136209G02F2001/136222
    • A liquid crystal display device comprises a transparent insulator substrate, switching elements which are formed on the transparent insulator substrate, a passivation layer for passivating the switching elements, color filters of prescribed colors which are formed on the passivation layer so that no color filter will be formed in areas around contact holes, black matrixes as shields for preventing light leakage which are formed on the passivation layer after the formation of the color filters so as to cover at least the switching elements and so that no black matrix will be formed in areas around the contact holes, an overcoat layer which is formed on the color filters and the black matrixes, pixel electrodes formed on the overcoat layer, lead electrodes of the switching elements for being connected to corresponding pixel electrodes, and contact holes which are formed through the overcoat layer and the passivation layer for establishing connection between the pixel electrodes and lead electrodes of the switching elements. The black matrixes are formed so that the edge of the black matrix touching the edge of the color filter will be superposed on the edge of the color filter.
    • 液晶显示装置包括透明绝缘体基板,形成在透明绝缘体基板上的开关元件,用于钝化开关元件的钝化层,形成在钝化层上的规定颜色的滤色器,使得不会有滤色器 形成在接触孔周围的区域中,黑色矩阵作为用于防止在形成滤色器之后在钝化层上形成的漏光的屏蔽,以便至少覆盖开关元件,并且使得在周围的区域中不会形成黑矩阵 接触孔,形成在滤色器和黑矩阵上的覆盖层,形成在外涂层上的像素电极,用于连接到相应的像素电极的开关元件的引线电极和通过外涂层形成的接触孔 层和钝化层,用于建立像素电极和引线之间的连接 开关元件的电极。 形成黑色矩阵,使得接触滤色器边缘的黑色矩阵的边缘将叠加在滤色器的边缘上。
    • 25. 发明授权
    • Method of fabricating thin film transistor array
    • 制造薄膜晶体管阵列的方法
    • US5966589A
    • 1999-10-12
    • US989573
    • 1997-12-12
    • Takahiko WatanabeOsamu Sukegawa
    • Takahiko WatanabeOsamu Sukegawa
    • G02F1/1362H01L21/77H01L21/84H01L27/12H01L21/00
    • G02F1/13458G02F1/136213H01L27/1214
    • There is provided a method of fabricating a thin film transistor array having a transparent insulating substrate, a plurality of thin film transistors formed on the substrate in a matrix, a gate bus line connected to gate electrodes of the thin film transistors, a drain bus line connected to drain electrodes of the thin film transistors, and a pixel electrode driven by the thin film transistors, the method including the steps of forming the gate electrode and the gate bus line on the transparent insulating substrate, forming a gate insulating film over the substrate, forming an operative semiconductor on the gate insulating film, forming the source electrodes, drain electrodes, and drain bus line of the thin film transistors on the gate insulating film and the operative semiconductor, forming a protection film all over the substrate, removing a portion of both the gate insulating film and the protection film, located above a terminal of the gate bus line, and also removing a portion of the protection film located above a terminal of the drain bus line, and forming the pixel electrode on the substrate. The above-mentioned method makes it possible to make a gate bus line and a drain bus line appear by only one photolithography step. Hence, the above-mentioned method needs to carry out only five photolithography steps to fabricate a thin film transistor array, whereas the conventional methods have to carry out six photolithography steps.
    • 提供一种制造薄膜晶体管阵列的方法,该薄膜晶体管阵列具有透明绝缘基板,在矩阵中形成在基板上的多个薄膜晶体管,连接到薄膜晶体管的栅电极的栅极总线,漏极总线 连接到薄膜晶体管的漏电极和由薄膜晶体管驱动的像素电极,所述方法包括以下步骤:在透明绝缘基板上形成栅极电极和栅极总线,在基板上形成栅极绝缘膜 在所述栅极绝缘膜上形成工作半导体,在所述栅极绝缘膜和所述有效半导体上形成所述薄膜晶体管的源电极,漏电极和漏极总线,在所述基板上形成保护膜, 栅极绝缘膜和保护膜两者位于栅极总线的端子之上,并且还去除了一部分 所述保护膜位于所述漏极总线的端子上方,并且在所述衬底上形成所述像素电极。 上述方法使得可以仅通过一个光刻步骤来形成栅极总线和漏极总线。 因此,上述方法只需要执行五个光刻步骤来制造薄膜晶体管阵列,而常规方法必须执行六个光刻步骤。