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21. 发明申请

US20120072432A1 FACET-BASED FILTERING OF SOCIAL NETWORK UPDATE DATA 有权
标题翻译：基于FACET的社会网络更新数据的过滤
公开(公告)号：US20120072432A1
公开(公告)日：2012-03-22
申请号：US13237844
申请日：2011-09-20
申请人： Alejandro Crosa , Esteban Kozak , Yasuhiro Matsuda , Xiaoyang Gu , Hao Yan , John Wang , Chanh Nguyen
发明人： Alejandro Crosa , Esteban Kozak , Yasuhiro Matsuda , Xiaoyang Gu , Hao Yan , John Wang , Chanh Nguyen
IPC分类号： G06F17/30 , G06F15/16
CPC分类号： G06Q50/01 , G06F17/30867 , G06Q10/00
摘要： A network update interface is presented to a user on a network to display network updates from other users of a mutual social-networking site. The network updates shared by the other users are gathered in a stream and supplied to a facet-filtering system including a network update interface. The user controls the display of certain network update items according to facet-filter characteristics enabled in facet-filter selection panels in the network update interface. The facet-filter characteristics are used by a facet filter to select certain network updates for display to the user in the network update interface. Trending links to further articles with content corresponding to the facet-filter characteristics are displayed to the user according to greatest popularity among the other users. Links to the profiles of the users sharing the articles are also provided in the network update interface.
摘要翻译：向网络上的用户呈现网络更新界面以显示来自相互社交网站的其他用户的网络更新。由其他用户共享的网络更新集中在一个流中，并提供给包括网络更新界面的构面过滤系统。用户根据网络更新界面中的小平面过滤器选择面板中启用的特征滤波器特征来控制某些网络更新项目的显示。小平面滤波器特征由小平面滤波器用于选择某些网络更新以在网络更新界面中向用户显示。根据其他用户的最大的普及程度，向用户显示与具有相关特征的内容对应的其他文章的趋势链接。在网络更新界面中还提供了共享文章用户的配置文件的链接。

22. 发明申请

US20070005408A1 Method and structure for agenda based scheduling using sub-events with automated management functions 审中-公开
标题翻译：使用具有自动管理功能的子事件的基于议程的调度的方法和结构
公开(公告)号：US20070005408A1
公开(公告)日：2007-01-04
申请号：US11170439
申请日：2005-06-30
申请人： Greg Boss , Andrew Jones , Kevin McConnell , Chanh Nguyen
发明人： Greg Boss , Andrew Jones , Kevin McConnell , Chanh Nguyen
IPC分类号： G06F9/46
CPC分类号： G06Q10/109 , G06Q10/1093
摘要： A method (and structure) of electronically scheduling an event comprising one or more sub-events. An event agenda is generated for the event by identifying a sub-event agenda item for each sub-event. Each sub-event agenda item can be entered into an electronic calendar scheduler as a separately-scheduled sub-event for the event.
摘要翻译：一种电子调度包括一个或多个子事件的事件的方法（和结构）。通过识别每个子事件的子事件议程项目为事件生成事件日程。每个子事件议程项目可以作为事件的单独调度的子事件输入电子日历调度程序。

23. 发明申请

US20050184309A1 Process for fabricating ultra-low contact resistances in GaN-based devices 有权
公开(公告)号：US20050184309A1
公开(公告)日：2005-08-25
申请号：US11107485
申请日：2005-04-14
申请人： Nguyen Nguyen , Paul Hashimoto , Chanh Nguyen
发明人： Nguyen Nguyen , Paul Hashimoto , Chanh Nguyen
IPC分类号： H01L21/285 , H01L21/337 , H01L29/20 , H01L29/45 , H01L31/0328
CPC分类号： H01L29/66924 , H01L21/28575 , H01L29/2003 , H01L29/452
摘要： A process for fabricating ohmic contacts in a field-effect transistor includes the steps of: thinning a semiconductor layer forming recessed portions in the semiconductor layer; depositing ohmic contact over the recessed portions; and heating the deposited ohmic contacts. The field-effect transistor comprises a layered semiconductor structure which includes a first group III nitride compound semiconductor layer doped with a charge carrier, and a second group III nitride compound semiconductor layer positioned below the first layer, to generate an electron gas in the structure. After the heating step the ohmic contacts communicate with the electron gas. As a result, an excellent ohmic contact to the channel of the transistor is obtained.

24. 发明授权

US06482711B1 InPSb/InAs BJT device and method of making 失效
标题翻译： InPSb / InAs BJT设备及其制作方法
公开(公告)号：US06482711B1
公开(公告)日：2002-11-19
申请号：US09428820
申请日：1999-10-28
申请人： Chanh Nguyen , Daniel P. Docter
发明人： Chanh Nguyen , Daniel P. Docter
IPC分类号： H01L21331
CPC分类号： H01L29/66318 , H01L29/201 , H01L29/205 , H01L29/7371
摘要： Bipolar junction transistor (BJT) devices, particularly heterojunction bipolar transistor (HBT) devices, and methods of making same are described. A combination of InPSb and p-type InAs is used to create extremely high speed bipolar devices which, due to reduced turn-on voltages, lend themselves to circuits having drastically reduced power dissipation. The described HBTs are fabricated on InAs or GaSb substrates, and include an InPSb emitter. The base includes In and As, in the form of InAs when on an InAs substrate, and as InAsSb when on a GaSb substrate. The collector may be the same as the base to form a single heterojunction bipolar transistor (SHBT) or may be the same as the emitter to form a double heterojunction bipolar transistor (DHBT). Heterojunctions preferably include a grading layer, which may be implemented by continuously changing the bulk material composition, or by forming a chirped superlattice of alternating materials. The grading layer preferably has delta doping planes near its ends to form an electrostatic gradient offsetting the quasi-electric field variation due to the changes in material composition, whereby effective conduction band offset may be substantially eliminated to facilitate speed, and valence band offset increased proportionally to enhance gain.
摘要翻译：描述了双极结晶体管（BJT）器件，特别是异质结双极晶体管（HBT）器件及其制造方法。使用InPSb和p型InAs的组合来创建极高速的双极器件，由于降低的导通电压，它们可以降低功率耗散的电路。描述的HBT是在InAs或GaSb衬底上制造的，并包括一个InPSb发射极。基底包括In和As，InAs在InAs衬底上，InAsSb在GaSb衬底上。集电极可以与基极相同以形成单异质结双极晶体管（SHBT），或者可以与发射极相同以形成双异质结双极晶体管（DHBT）。异质结优选包括可以通过连续改变散装材料组成或通过形成交替材料的啁啾超晶格来实现的分级层。分级层优选在其端部附近具有Δ掺杂平面以形成抵消由于材料组成的变化引起的准电场变化的静电梯度，由此可以基本上消除有效导带偏移以促进速度，并且价带偏移成比例地增加增加收益。

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