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    • 21. 发明授权
    • External noise intrusion prevention device, signal amplifier, protector and antenna plug
    • 外部噪声入侵防护装置,信号放大器,保护器和天线插头
    • US07039360B2
    • 2006-05-02
    • US10054187
    • 2002-01-22
    • Toshihiro Sugiura
    • Toshihiro Sugiura
    • H04B1/00
    • H04N7/17309H03H7/01H04B15/00H04N7/102H04N21/6118H04N21/6168
    • An external noise intrusion prevention device preventing intrusion of external noise into a central conductor of a trunk cable in an up signal frequency band is provided. A first filter circuit 3 letting a signal in frequencies of 54 MHz or higher pass is provided between an input terminal 1 and an output terminal 2. A front filter circuit 4a and a rear filter circuit 4b, which constitute a second filter circuit 4, are provided on both ends of the external noise intrusion prevention device, respectively. A noise elimination circuit 6 formed by cascading two connection transformers 6a and 6b is also provided. The two connection transformers 6a and 6b are connected to each other while being arranged in a line symmetrical manner.
    • 提供了外部噪声入侵防止装置,其防止外部噪声侵入上行信号频带中的中继线缆的中心导体。 在输入端子1和输出端子2之间设置使频率为54MHz以上的信号的第一滤波电路3。 构成第二滤波电路4的前置滤波电路4a和后滤波器电路4b分别设置在外部噪声入侵防止装置的两端。 还提供了通过级联两个连接变压器6a和6b形成的噪声消除电路6。 两个连接变压器6a和6b在线对称的状态下彼此连接。
    • 22. 发明授权
    • Stacked thin film assembly
    • 堆叠薄膜组件
    • US5990556A
    • 1999-11-23
    • US892736
    • 1997-07-15
    • Koichi MizobuchiToshihiro Sugiura
    • Koichi MizobuchiToshihiro Sugiura
    • C23C16/06C23C28/02H01L21/28H01L21/285H01L21/3205H01L23/52H01L23/48
    • H01L21/28512C23C16/06C23C28/023
    • A stacked film assembly for use as wiring in a semiconductor device having a bottom film (CVD-W film) 33 and a top film (Al alloy film) 12, where the surface roughness (Ra) of the bottom film is less than 100 .ANG. and the crystal orientation of the top film formed on this surface is controlled, a CVD method for the making thereof, and a semiconductor device in which the stacked film assembly is employed. Even when there is no lattice matching of the bottom film and the top film, crystal orientation of the top film can be sufficiently controlled to provide a targeted face ((111) face with aluminum film), and in particular it will be possible to readily form a stacked film assembly having a satisfactory barrier function as well as sufficient EM resistance and with good film formation.
    • 在具有底膜(CVD-W膜)33和顶膜(Al合金膜)12的半导体器件中用作布线的叠层膜组件,其中底膜的表面粗糙度(Ra)小于100 并且控制在该表面上形成的顶部膜的晶体取向,其制造方法,以及使用层压膜组件的半导体器件。 即使没有底部薄膜和顶部薄膜的晶格匹配,也可以充分地控制顶部薄膜的晶体取向,从而提供目标面((111)面与铝膜),特别是可以容易地 形成具有令人满意的屏障功能以及足够的EM电阻并且具有良好的成膜的叠层膜组件。