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21. 发明授权

US07531240B2 Substrate with locally integrated single crystalline silicon layer and method of fabricating the same 有权
标题翻译：具有局部集成单晶硅层的衬底及其制造方法
公开(公告)号：US07531240B2
公开(公告)日：2009-05-12
申请号：US11311228
申请日：2005-12-20
申请人： Wenxu Xianyu , Takashi Noguchi , Young-soo Park , Hans S. Cho , Huaxiang Yin
发明人： Wenxu Xianyu , Takashi Noguchi , Young-soo Park , Hans S. Cho , Huaxiang Yin
IPC分类号： B32B9/04 , H01L31/36 , B32B13/04 , B32B9/00 , B32B19/00
CPC分类号： H01L21/26506 , H01L21/268 , H01L21/32134 , H01L21/76254 , H01L21/76256 , H01L27/1214 , H01L27/1266 , H01L29/04 , H01L29/66757 , H01L29/66772
摘要： A method of fabricating a large substrate with a locally integrated single crystalline silicon layer is provided. The method includes: forming a buffer layer on a support plate; separately fabricating a single crystalline silicon layer; attaching the single crystalline silicon layer having a predetermined thickness, which is separately fabricated, to a predetermined portion in the support plate; forming a non-single crystalline silicon layer having a predetermined thickness to cover the single crystalline silicon layer and the buffer layer; and processing the non-single crystalline silicon layer to expose a surface of the non-single crystalline silicon layer and to level the surface of the non-single crystalline silicon layer with a surface of the amorphous silicon layer.
摘要翻译：提供了一种制造具有局部集成的单晶硅层的大型衬底的方法。该方法包括：在支撑板上形成缓冲层; 分别制造单晶硅层; 将单独制造的具有预定厚度的单晶硅层附着到支撑板中的预定部分; 形成具有预定厚度的非单晶硅层以覆盖单晶硅层和缓冲层; 以及处理所述非单晶硅层以暴露所述非单晶硅层的表面并且用所述非晶硅层的表面对所述非单晶硅层的表面进行平坦化。

22. 发明申请

US20080261333A1 Methods of forming a material film, methods of forming a capacitor, and methods of forming a semiconductor memory device using the same 审中-公开
标题翻译：形成材料膜的方法，形成电容器的方法以及使用其形成半导体存储器件的方法
公开(公告)号：US20080261333A1
公开(公告)日：2008-10-23
申请号：US12213424
申请日：2008-06-19
申请人： Wenxu Xianyu , Takashi Noguchi , Hans S. Cho , Jang-Yeon Kwon , Huaxiang Yin
发明人： Wenxu Xianyu , Takashi Noguchi , Hans S. Cho , Jang-Yeon Kwon , Huaxiang Yin
IPC分类号： H01L21/28
CPC分类号： H01L21/02356 , H01L21/02197 , H01L21/31691 , H01L21/84 , H01L27/11502 , H01L27/12
摘要： A method of forming a material (e.g., ferroelectric) film, a method of manufacturing a capacitor, and a method of forming a semiconductor memory device using the method of forming the (e.g., ferroelectric) film are provided. Pursuant to an example embodiment of the present invention, a method of forming a ferroelectric film includes preparing a substrate, depositing an amorphous ferroelectric film on the substrate, and crystallizing the amorphous ferroelectric film by irradiating it with a laser beam. According to still another example embodiment of the present invention, a method of forming a ferroelectric film may reduce the thermal damage to other elements because the ferroelectric film may be formed at a temperature lower than about 500° C. to about 550° C.
摘要翻译：提供了形成材料（例如铁电体）膜的方法，制造电容器的方法，以及使用形成（例如铁电体）膜的方法形成半导体存储器件的方法。根据本发明的示例性实施例，形成铁电体膜的方法包括制备基板，在基板上沉积非晶铁电体膜，并通过用激光束照射非晶强电介质膜使其结晶。根据本发明的另一示例性实施例，形成铁电体膜的方法可以减少对其它元件的热损伤，因为铁电体膜可以形成在低于约500℃至约550℃的温度。

23. 发明授权

US07479442B2 Method of manufacturing single crystal Si film 有权
标题翻译：制造单晶Si膜的方法
公开(公告)号：US07479442B2
公开(公告)日：2009-01-20
申请号：US11071175
申请日：2005-03-04
申请人： Takashi Noguchi , Wenxu Xianyu , Huaxiang Yin
发明人： Takashi Noguchi , Wenxu Xianyu , Huaxiang Yin
IPC分类号： H01L21/461
CPC分类号： H01L21/76254
摘要： Provided is a method of manufacturing a single crystal Si film. The method includes: preparing a Si substrate on which a first oxide layer is formed and an insulating substrate on which a second oxide layer is formed; forming a dividing layer at a predetermined depth from a surface of the Si substrate by implanting hydrogen ions from above the first oxide layer; bonding the insulating substrate to the Si substrate so that the first oxide layer contacts the second oxide layer; and forming a single crystal Si film having a predetermined thickness on the insulating substrate by cutting the dividing layer by irradiating a laser beam from above the insulating substrate. Therefore, a single crystal Si film having a predetermined thickness can be formed on an insulating substrate.
摘要翻译：提供制造单晶Si膜的方法。该方法包括：制备其上形成有第一氧化物层的Si衬底和形成有第二氧化物层的绝缘衬底; 通过从所述第一氧化物层上方注入氢离子，从所述Si衬底的表面形成预定深度的分隔层; 将绝缘基板接合到Si衬底，使得第一氧化物层接触第二氧化物层; 以及通过从绝缘基板上方照射激光束切割分隔层，在绝缘基板上形成具有预定厚度的单晶硅膜。因此，可以在绝缘基板上形成具有预定厚度的单晶Si膜。

24. 发明申请

US20060292313A1 Methods of forming a more highly-oriented silicon layer and substrate having the same 有权
标题翻译：形成更高取向硅层的方法和具有该硅层的基板的方法
公开(公告)号：US20060292313A1
公开(公告)日：2006-12-28
申请号：US11473067
申请日：2006-06-23
申请人： Wenxu Xianyu , Hans Cho , Takashi Noguchi , Young-Soo Park , Xiaoxin Zhang , Huaxiang Yin , Hyuck Lim , Kyung-Bae Park , Suk-Pil Kim
发明人： Wenxu Xianyu , Hans Cho , Takashi Noguchi , Young-Soo Park , Xiaoxin Zhang , Huaxiang Yin , Hyuck Lim , Kyung-Bae Park , Suk-Pil Kim
IPC分类号： C09K19/00
CPC分类号： C30B29/06 , Y10T428/10
摘要： Provided are methods of forming a more highly-oriented silicon thin layer having a larger grain size, and a substrate having the same. The methods may include forming an aluminum (Al) layer on a base substrate, forming a more highly-oriented Al layer by recrystallizing the Al layer under vacuum, forming a more highly-oriented γ-Al2O3 layer on the more highly-oriented Al layer and/or epitaxially growing a silicon layer on the more highly-oriented γ-Al2O3 layer. The method may be used to manufacture a semiconductor device having higher carrier mobility.
摘要翻译：提供了形成具有较大晶粒尺寸的更高取向硅薄层的方法以及具有其的基板。所述方法可以包括在基底基板上形成铝（Al）层，通过在真空下重结晶Al层，形成更高取向的Al层，形成更高取向的γ-Al 2 O 在更高取向的Al层上和/或在更高取向的γ-Al 2 O 3上外延生长硅层3层 >层。该方法可用于制造具有较高载流子迁移率的半导体器件。

25. 发明申请

US20060267100A1 Semiconductor device including single crystal silicon layer and method of manufacturing semiconductor device 有权
标题翻译：包括单晶硅层的半导体器件和制造半导体器件的方法
公开(公告)号：US20060267100A1
公开(公告)日：2006-11-30
申请号：US11430117
申请日：2006-05-09
申请人： Takashi Noguchi , Hans Cho , Wenxu Xianyu , Do-young Kim , Jang-yeong Kwon , Huaxiang Yin , Kyung-bae Park , Xiaozin Zhang
发明人： Takashi Noguchi , Hans Cho , Wenxu Xianyu , Do-young Kim , Jang-yeong Kwon , Huaxiang Yin , Kyung-bae Park , Xiaozin Zhang
IPC分类号： H01L27/12
CPC分类号： H01L21/84 , H01L27/11 , H01L27/1108 , H01L27/1203 , H01L29/66772 , H01L29/7842 , Y10S257/903
摘要： A semiconductor device including a substrate, a P-MOS single crystal TFT formed on the substrate, and an N-MOS single crystal TFT formed on the P-MOS single crystal TFT. The source region of the P-MOS single crystal TFT and the source region of the N-MOS single crystal TFT may be connected to each other. The P-MOS single crystal TFT and the N-MOS single crystal TFT may share a common gate. Also, the P-MOS single crystal TFT may include a single crystal silicon layer with a crystal plane of (100) and a crystal direction of . The N-MOS single crystal TFT may include a single crystal silicon layer having the same crystal direction as the single crystal silicon layer of the P-MOS single crystal TFT and having a tensile stress greater than the single crystal silicon layer of the P-MOS single crystal TFT.
摘要翻译：包括基板，形成在基板上的P-MOS单晶TFT的半导体器件和形成在P-MOS单晶TFT上的N-MOS单晶TFT。 P-MOS单晶TFT的源极区域和N-MOS单晶TFT的源极区域可以彼此连接。 P-MOS单晶TFT和N-MOS单晶TFT可以共用公共栅极。此外，P-MOS单晶TFT可以包括具有（100）的晶面和<100>的晶体方向的单晶硅层。 N-MOS单晶TFT可以包括与P-MOS单晶TFT的单晶硅层相同的晶体方向的单晶硅层，其拉应力大于P-MOS的单晶硅层单晶TFT。

26. 发明授权

US08723181B2 Stacked transistors and electronic devices including the same 有权
标题翻译：堆叠晶体管和包括其的电子器件
公开(公告)号：US08723181B2
公开(公告)日：2014-05-13
申请号：US12662272
申请日：2010-04-08
申请人： Huaxiang Yin , Takashi Noguchi , Wenxu Xianyu , Kyung-bae Park
发明人： Huaxiang Yin , Takashi Noguchi , Wenxu Xianyu , Kyung-bae Park
IPC分类号： H01L29/10
CPC分类号： H01L21/02675 , H01L21/2026 , H01L21/84 , H01L27/11 , H01L27/1108 , H01L27/12 , H01L27/1281
摘要： Stacked transistors and electronic devices including the stacked transistors. An electronic device includes a substrate, a first transistor on the substrate and including a first active layer, a first gate, and a first gate insulating layer between the first active layer and the first gate, a first metal line spaced apart from the first gate on the substrate, a first insulating layer covering the first transistor and the first metal line, and a second transistor on the first insulating layer between the first transistor and the first metal line, and including a second active layer, a second gate, and a second gate insulating layer between the second active layer and the second gate.
摘要翻译：堆叠晶体管和包括堆叠晶体管的电子器件。电子器件包括衬底，衬底上的第一晶体管，并且在第一有源层和第一栅极之间包括第一有源层，第一栅极和第一栅极绝缘层，与第一栅极间隔开的第一金属线在所述基板上，覆盖所述第一晶体管和所述第一金属线的第一绝缘层，以及在所述第一晶体管和所述第一金属线之间的所述第一绝缘层上的第二晶体管，并且包括第二有源层，第二栅极和第二栅极绝缘层，位于第二有源层和第二栅极之间。

27. 发明授权

US07723168B2 Method of manufacturing a stacked transistor having a polycrystalline Si film 有权
标题翻译：制造具有多晶Si膜的叠层晶体管的方法
公开(公告)号：US07723168B2
公开(公告)日：2010-05-25
申请号：US11283874
申请日：2005-11-22
申请人： Huaxiang Yin , Takashi Noguchi , Wenxu Xianyu , Kyung-bae Park
发明人： Huaxiang Yin , Takashi Noguchi , Wenxu Xianyu , Kyung-bae Park
IPC分类号： H01L21/00
CPC分类号： H01L21/02675 , H01L21/2026 , H01L21/84 , H01L27/11 , H01L27/1108 , H01L27/12 , H01L27/1281
摘要： A method of manufacturing a polycrystalline Si film and a method of manufacturing a stacked transistor are provided. The method of manufacturing the polycrystalline Si film includes preparing an insulating substrate on which is formed a transistor that includes a poly-Si active layer, a gate insulating layer, and a gate, sequentially formed, forming an interconnection metal line separated from the gate, forming an insulating layer that covers the transistor and the interconnection metal line, forming an amorphous silicon layer on the insulating layer; and annealing the amorphous silicon layer.
摘要翻译：提供一种制造多晶Si膜的方法和制造堆叠晶体管的方法。制造多晶Si膜的方法包括制备绝缘基板，其上形成有依次形成的多晶硅，具有多晶硅有源层，栅极绝缘层和栅极，形成与栅极分离的互连金属线，形成覆盖晶体管和互连金属线的绝缘层，在绝缘层上形成非晶硅层; 并退火非晶硅层。

28. 发明申请

US20090162981A1 THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20090162981A1
公开(公告)日：2009-06-25
申请号：US12372541
申请日：2009-02-17
申请人： Huaxiang YIN , Takashi Noguchi , Wenxu Xianyu , Do-young Kim
发明人： Huaxiang YIN , Takashi Noguchi , Wenxu Xianyu , Do-young Kim
IPC分类号： H01L21/84
CPC分类号： H01L29/785 , H01L29/42384 , H01L29/458 , H01L29/4908 , H01L29/7855
摘要： A thin film transistor and a method of manufacturing the same are provided. The thin film transistor includes a substrate; a buffer layer formed on the substrate; a source and a drain spaced apart from each other on the buffer layer; a channel layer formed on the buffer layer to connect the source and the drain with each other; and a gate formed on the buffer layer to be spaced apart from the source, the drain and the channel layer.
摘要翻译：提供薄膜晶体管及其制造方法。薄膜晶体管包括基板; 形成在所述基板上的缓冲层; 在缓冲层上彼此间隔开的源极和漏极; 形成在所述缓冲层上的沟道层，以将所述源极和所述漏极彼此连接; 以及形成在缓冲层上以与源极，漏极和沟道层间隔开的栅极。

29. 发明授权

US07416924B2 Organic light emitting display with single crystalline silicon TFT and method of fabricating the same 有权
标题翻译：具有单晶硅TFT的有机发光显示器及其制造方法
公开(公告)号：US07416924B2
公开(公告)日：2008-08-26
申请号：US11270541
申请日：2005-11-10
申请人： Takashi Noguchi , Wenxu Xianyu , Huaxiang Yin
发明人： Takashi Noguchi , Wenxu Xianyu , Huaxiang Yin
IPC分类号： H01L21/84 , H01L21/00 , H01L51/40 , H01L21/46
CPC分类号： H01L27/1266 , H01L27/1255 , H01L27/3244 , H01L29/78603
摘要： Provided is an organic light emitting display, in which a semiconductor circuit unit of 2T-1C structure including a switching transistor and a driving transistor formed of single crystalline silicon is formed on a plastic substrate. A method of fabricating the single crystalline silicon includes: growing a single crystalline silicon layer to a predetermined thickness on a crystal growth plate; depositing a buffer layer on the single crystalline silicon layer; forming a partition layer at a predetermined depth in the single crystalline silicon layer by, e.g., implanting hydrogen ions in the single crystalline silicon layer from an upper portion of an insulating layer; attaching a substrate to the buffer layer; and releasing the partition layer of the single crystalline silicon layer by heating the partition layer from the crystal growth plate to obtain a single crystalline silicon layer of a predetermined thickness on the substrate.
摘要翻译：提供一种有机发光显示器，其中在塑料基板上形成包括开关晶体管和由单晶硅形成的驱动晶体管的2T-1C结构的半导体电路单元。制造单晶硅的方法包括：在晶体生长板上生长单晶硅层至预定厚度; 在单晶硅层上沉积缓冲层; 通过例如从绝缘层的上部注入单晶硅层中的氢离子，在单晶硅层中形成预定深度的分隔层; 将衬底附接到缓冲层; 以及通过从晶体生长板加热分隔层来释放单晶硅层的分隔层，以在基板上获得预定厚度的单晶硅层。

30. 发明申请

US20060094212A1 Thin film transistor and method of manufacturing the same 有权
公开(公告)号：US20060094212A1
公开(公告)日：2006-05-04
申请号：US11248620
申请日：2005-10-13
申请人： Takashi Noguchi , Wenxu Xianyu , Hans Cho , Huaxiang Yin
发明人： Takashi Noguchi , Wenxu Xianyu , Hans Cho , Huaxiang Yin
IPC分类号： H01L21/20
CPC分类号： H01L21/02598 , H01L21/02532 , H01L21/02667 , H01L21/2026 , H01L27/1281 , H01L29/66772
摘要： A thin film transistor (TFT) and a method of manufacturing the same are provided. The TFT includes a transparent substrate, an insulating layer on a region of the transparent substrate, a monocrystalline silicon layer, which includes source, drain, and channel regions, on the insulating layer and a gate insulating film and a gate electrode on the channel region of the monocrystalline silicon layer.

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