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    • 22. 发明授权
    • Method for manufacturing a semiconductor device
    • 半导体器件的制造方法
    • US4851362A
    • 1989-07-25
    • US235967
    • 1988-08-24
    • Ken-ichi Suzuki
    • Ken-ichi Suzuki
    • H01L21/285
    • H01L21/28525
    • A method for manufacturing a semicondcutor device includes, steps of forming a poly silicon layer at a predetermined area for a base electrode on a surface of a thin insulating film, forming an insulating film at a sidewall of the exposed poly silicon layer, growing first and second selective epitaxial layers on the exposed surface of a silicon substrate to connect the epitaxial layer with the poly silicon layer and forming an active base and an emitter in the epitaxial layer so that the poly silicon layer is constituted as a pull-out electrode for the base.
    • 半切割器件的制造方法包括:在薄绝缘膜的表面上的基极的规定区域形成多晶硅层的步骤,在暴露的多晶硅层的侧壁形成绝缘膜,首先生长, 在硅衬底的暴露表面上的第二选择性外延层,以将所述外延层与所述多晶硅层连接并在所述外延层中形成有源基极和发射极,使得所述多晶硅层构成为所述多晶硅层的拉出电极 基础。