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21. 发明申请

US20100149689A1 Thin film magnetic head having a pair of magnetic layers whose magnetization is controlled by shield layer including amorphous layer 审中-公开
公开(公告)号：US20100149689A1
公开(公告)日：2010-06-17
申请号：US12314464
申请日：2008-12-11
申请人： Yoshihiro Tsuchiya , Tsutomu Chou , Daisuke Miyauchi , Shinji Hara , Takahiko Machita , Hironobu Matsuzawa
发明人： Yoshihiro Tsuchiya , Tsutomu Chou , Daisuke Miyauchi , Shinji Hara , Takahiko Machita , Hironobu Matsuzawa
IPC分类号： G11B5/60 , G11B5/33
CPC分类号： G11B5/3912 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3932 , G11B2005/3996 , H01F10/3268 , H01F10/3272 , H01F10/3295
摘要： A thin film magnetic head includes a magnetoresistance (MR) layered body that has first and second magnetic layers whose magnetization direction are changed according to an external magnetic field, a nonmagnetic middle layer and where the first magnetic layer, the nonmagnetic middle layer and the second magnetic layer are disposed in a manner of facing each other in respective order, first and second shield layers that are disposed in a manner of sandwiching the MR-stack in the film surface orthogonal direction of the MR-stack facing the first magnetic layer and the second magnetic layer, respectively, and that also serve as an electrode for applying a sense current to the film surface orthogonal direction of the MR-stack; and a bias magnetic field application means that is disposed on an opposite surface of an air bearing surface (ABS) of the MR-stack, and that applies a bias magnetic field to the MR-stack in the direction orthogonal to the ABS. The first shield layer has a first exchange coupling magnetic field (ECMF) application layer that is disposed in a manner of facing the first magnetic layer, and that transmits to the first magnetic layer an exchange coupling magnetic field in the direction in parallel with the ABS, and that includes an amorphous layer, and has a first antiferromagnetic layer that is disposed on a rear surface of the first ECMF application layer viewed from the first magnetic layer in a manner of facing the first ECMF application layer, and that is exchange-coupled with the first ECMF application layer. The second shield layer has a second exchange coupling magnetic field (ECMF) application layer that is disposed in a manner of facing the second magnetic layer, and that transmits to the second magnetic layer the exchange coupling magnetic field in a direction in parallel with the ABS; and a second antiferromagnetic layer that is disposed on a rear surface of the second ECMF application layer viewed from the second magnetic layer, and that is exchange-coupled with the second ECMF application layer.

22. 发明申请

US20100027168A1 Thin film magnetic head having a pair of magnetic layers whose magnetization is controlled by shield layers 失效
标题翻译：薄膜磁头具有一对磁性层，其磁化由屏蔽层控制
公开(公告)号：US20100027168A1
公开(公告)日：2010-02-04
申请号：US12219841
申请日：2008-07-29
申请人： Tsutomu Chou , Yoshihiro Tsuchiya , Shinji Hara , Daisuke Miyauchi , Takahiko Machita
发明人： Tsutomu Chou , Yoshihiro Tsuchiya , Shinji Hara , Daisuke Miyauchi , Takahiko Machita
IPC分类号： G11B5/33
CPC分类号： G01R33/093 , B82Y25/00 , G11B5/3912 , H01L43/08
摘要： A thin film magnetic head comprise an MR laminated body composed of a first and second MR magnetic layers, first and second shield layers, and a bias magnetic field application layer provided on an opposite side of an air bearing surface (ABS) of the MR laminated body in order to apply a bias magnetic field orthogonal relative to the ABS. The first shield layer comprises a first exchange coupling magnetic field application layer, a first antimagnetic layer, a second exchange coupling magnetic field application layer, and a second antimagnetic layer. The first antimagnetic layer is provided in contact with the first exchange coupling magnetic field application layer on the rear face of the first exchange coupling magnetic field application layer and which is antimagnetically coupled with the first exchange coupling magnetic field application layer. The second shield layer has the same configuration as that of the first shield layer.
摘要翻译：薄膜磁头包括由第一和第二MR磁性层，第一和第二屏蔽层以及设置在MR叠层的空气轴承表面（ABS）的相对侧上的偏置磁场施加层组成的MR层叠体以便施加相对于ABS正交的偏置磁场。第一屏蔽层包括第一交换耦合磁场施加层，第一防磁层，第二交换耦合磁场施加层和第二防磁层。第一防磁层设置成与第一交换耦合磁场施加层的背面上的第一交换耦合磁场施加层接触，并且与第一交换耦合磁场施加层反磁耦合。第二屏蔽层具有与第一屏蔽层相同的构造。

23. 发明授权

US08477461B2 Thin film magnetic head having a pair of magnetic layers whose magnetization is controlled by shield layers 失效
标题翻译：薄膜磁头具有一对磁性层，其磁化由屏蔽层控制
公开(公告)号：US08477461B2
公开(公告)日：2013-07-02
申请号：US12219841
申请日：2008-07-29
申请人： Tsutomu Chou , Yoshihiro Tsuchiya , Shinji Hara , Daisuke Miyauchi , Takahiko Machita
发明人： Tsutomu Chou , Yoshihiro Tsuchiya , Shinji Hara , Daisuke Miyauchi , Takahiko Machita
IPC分类号： G11B5/39 , G11B5/10
CPC分类号： G01R33/093 , B82Y25/00 , G11B5/3912 , H01L43/08
摘要： A thin film magnetic head including an MR laminated body composed of a first and second MR magnetic layers, first and second shield layers, and a bias magnetic field application layer provided on an opposite side of an air bearing surface (ABS) of the MR laminated body in order to apply a bias magnetic field orthogonal relative to the ABS. The first shield layer includes a first exchange coupling magnetic field application layer and a first antiferromagnetic layer; and the second shield layer includes a second exchange coupling magnetic field application layer and a second antiferromagnetic layer.
摘要翻译：一种薄膜磁头，其包括由第一和第二MR磁性层组成的MR层叠体，第一和第二屏蔽层以及设置在MR叠片的空气轴承表面（ABS）的相对侧上的偏置磁场施加层以便施加相对于ABS正交的偏置磁场。第一屏蔽层包括第一交换耦合磁场施加层和第一反铁磁层; 并且第二屏蔽层包括第二交换耦合磁场施加层和第二反铁磁层。

24. 发明授权

US08189303B2 Thin film magnetic head having a pair of magnetic layers whose magnetization is controlled by shield layers 有权
标题翻译：薄膜磁头具有一对磁性层，其磁化由屏蔽层控制
公开(公告)号：US08189303B2
公开(公告)日：2012-05-29
申请号：US12222543
申请日：2008-08-12
申请人： Shinji Hara , Yoshihiro Tsuchiya , Tsutomu Chou , Daisuke Miyauchi , Takahiko Machita
发明人： Shinji Hara , Yoshihiro Tsuchiya , Tsutomu Chou , Daisuke Miyauchi , Takahiko Machita
IPC分类号： G11B5/39 , G11B5/11
CPC分类号： G11B5/3912 , B82Y25/00 , G01R31/318536 , G01R31/318541 , G01R33/093
摘要： A thin film magnetic head includes a magneto-resistance (MR) laminated body, a lower shield layer and an upper shield layer that face the first MR magnetic layer. The lower and upper shield layers respectively have first and second anti-parallel layers and first and second antiferromagnetic layers. An exchange coupling intensity relating to an antiferromagnetic coupling between the second anti-parallel layer and the second antiferromagnetic layer is greater in the peripheral area of a projection area than that of the projection area of the upper shield layer side end surface of the MR laminated body to the film surface's orthogonal direction.
摘要翻译：薄膜磁头包括面对第一MR磁性层的磁阻（MR）层叠体，下屏蔽层和上屏蔽层。下屏蔽层和上屏蔽层分别具有第一和第二反平行层以及第一和第二反铁磁层。与第二反平行层和第二反铁磁性层之间的反铁磁耦合有关的交换耦合强度在投影区域的周边区域中大于MR层叠体的上屏蔽层侧端面的投影面积到膜表面的正交方向。

25. 发明申请

US20100067148A1 Thin film magnetic head having a pair of magnetic layers whose magnetization is controlled by shield layers 审中-公开
标题翻译：薄膜磁头具有一对磁性层，其磁化由屏蔽层控制
公开(公告)号：US20100067148A1
公开(公告)日：2010-03-18
申请号：US12232332
申请日：2008-09-16
申请人： Yoshihiro Tsuchiya , Tsutomu Chou , Shinji Hara , Daisuke Miyauchi , Takahiko Machita
发明人： Yoshihiro Tsuchiya , Tsutomu Chou , Shinji Hara , Daisuke Miyauchi , Takahiko Machita
IPC分类号： G11B5/33 , G11B5/48
CPC分类号： G11B5/3932 , B82Y25/00 , G11B5/3912 , G11B5/3945 , H01F10/3254 , H01F10/3272
摘要： A thin film magnetic head comprises an MR laminated body that has first and second magnetic layers, a nonmagnetic middle layer, and the first and second magnetic layers and the nonmagnetic middle layer are laminated to make contact with each other in respective order. First and second antiferromagnetic layers are provided with the first and second magnetic layers respectively. The first antiferromagnetic layer and/or the second antiferromagnetic layer contains a void part or a thin portion at least in a portion of the projection area toward the orthogonal direction to the film surface of the MR laminated body.
摘要翻译：薄膜磁头包括具有第一和第二磁性层，非磁性中间层，并且第一和第二磁性层和非磁性中间层被层压以相互接触的MR层叠体。第一和第二反铁磁层分别设置有第一和第二磁性层。第一反铁磁层和/或第二反铁磁性层至少在与MR层叠体的膜表面正交的方向上的投影区域的至少一部分中具有空隙部分或薄壁部分。

26. 发明申请

US20100039734A1 Thin film magnetic head having a pair of magnetic layers whose magnetization is controlled by shield layers 有权
标题翻译：薄膜磁头具有一对磁性层，其磁化由屏蔽层控制
公开(公告)号：US20100039734A1
公开(公告)日：2010-02-18
申请号：US12222543
申请日：2008-08-12
申请人： Shinji Hara , Yoshihiro Tsuchiya , Tsutomu Chou , Daisuke Miyauchi , Takahiko Machita
发明人： Shinji Hara , Yoshihiro Tsuchiya , Tsutomu Chou , Daisuke Miyauchi , Takahiko Machita
IPC分类号： G11B5/33
CPC分类号： G11B5/3912 , B82Y25/00 , G01R31/318536 , G01R31/318541 , G01R33/093
摘要： A thin film magnetic head includes a magneto-resistance (MR) laminated body, a lower shield layer and an upper shield layer that face the first MR magnetic layer. The lower and upper shield layers respectively have first and second exchange coupling magnetic field application layers and first and second antiferromagnetic layers. An exchange coupling intensity relating to an antiferromagnetic coupling between the second exchange coupling magnetic field application layer and the second antiferromagnetic layer is greater in the peripheral area of a projection area than that of the projection area of the upper shield layer side end surface of the MR laminated body to the film surface's orthogonal direction.
摘要翻译：薄膜磁头包括面对第一MR磁性层的磁阻（MR）层叠体，下屏蔽层和上屏蔽层。下屏蔽层和上屏蔽层分别具有第一和第二交换耦合磁场施加层以及第一和第二反铁磁层。与第二交换耦合磁场施加层和第二反铁磁性层之间的反铁磁耦合有关的交换耦合强度在投影区域的周边区域中大于MR的上屏蔽层侧端面的投影面积层压体到膜表面的正交方向。

27. 发明授权

US07881023B2 Magnetoresistive device of the CPP type, and magnetic disk system 有权
标题翻译： CPP型磁阻器和磁盘系统
公开(公告)号：US07881023B2
公开(公告)日：2011-02-01
申请号：US12019202
申请日：2008-01-24
申请人： Takahiko Machita , Koji Shimazawa , Daisuke Miyauchi , Tsutomu Chou
发明人： Takahiko Machita , Koji Shimazawa , Daisuke Miyauchi , Tsutomu Chou
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3932 , B82Y25/00 , G01R33/093 , G11B5/3912 , G11B5/398 , H01L43/08
摘要： The invention provides a magnetoresistive device with the CPP (current perpendicular to plane) structure, comprising a magnetoresistive unit, and a first shield layer and a second shield layer located and formed such that the magnetoresistive unit is sandwiched between them, with a sense current applied in a stacking direction, wherein the magnetoresistive unit comprises a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed such that the nonmagnetic intermediate layer is interposed between them, wherein the first shield layer, and the second shield layer is controlled by magnetization direction control means in terms of magnetization direction, and the first ferromagnetic layer, and the second ferromagnetic layer receives action such that there is an antiparallel magnetization state created, in which mutual magnetizations are in opposite directions, under the influences of magnetic actions of the first shield layer and the second shield layer.
摘要翻译：本发明提供了一种具有CPP（电流垂直于平面）结构的磁阻器件，包括磁阻单元，以及位于并形成第一屏蔽层和第二屏蔽层，使得磁阻单元夹在它们之间，并施加感应电流在叠层方向上，其中所述磁阻单元包括非磁性中间层，以及堆叠并形成所述非磁性中间层的第一铁磁层和第二铁磁层，其中所述第一屏蔽层和所述第二屏蔽层在磁化方向上由磁化方向控制装置控制，并且第一铁磁层和第二铁磁层受到磁力的影响而产生相互磁化相反方向产生的反平行磁化状态的动作第一屏蔽层的动作和第二屏蔽层。

28. 发明授权

US07876535B2 Magnetoresistive device of the CPP type, and magnetic disk system 有权
标题翻译： CPP型磁阻器和磁盘系统
公开(公告)号：US07876535B2
公开(公告)日：2011-01-25
申请号：US12019205
申请日：2008-01-24
申请人： Takahiko Machita , Koji Shimazawa , Daisuke Miyauchi , Tsutomu Chou
发明人： Takahiko Machita , Koji Shimazawa , Daisuke Miyauchi , Tsutomu Chou
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3932 , G11B2005/3996
摘要： A magnetoresistive device of a CPP (current perpendicular to plane) structure includes a magnetoresistive unit sandwiched between a first substantially soft magnetic shield layer from below, and a second substantially soft magnetic shield layer from above, with a sense current applied in a stacking direction. The magnetoresistive unit includes a non-magnetic intermediate layer sandwiched between a first ferromagnetic layer, and a second ferromagnetic layer. At least one of the first and second shield layers is configured in a window frame of a planar shape, including a front frame-constituting portion and a back frame-constituting portion partially comprising a combination of a nonmagnetic gap layer with a bias magnetic field-applying layer. The combination of the nonmagnetic gap layer with the bias magnetic field-applying layer forms a closed magnetic path with magnetic flux going all the way around the window framework, turning the magnetization of the front frame-constituting portion into a single domain.
摘要翻译： CPP（电流垂直于平面）结构的磁阻器件包括夹在下面的第一基本上软磁屏蔽层和从上方的第二基本软磁屏蔽层之间的磁阻单元，其中沿堆叠方向施加感测电流。磁阻单元包括夹在第一铁磁层和第二铁磁层之间的非磁性中间层。第一屏蔽层和第二屏蔽层中的至少一个被配置在平面形状的窗框中，包括前框架构成部分和后框架构成部分，部分地包括具有偏磁场的非磁性间隙层的组合，应用层。非磁性间隙层与偏置磁场施加层的组合形成闭合的磁路，其中磁通量一直围绕窗框架，将前框架构成部分的磁化转变为单个畴。

29. 发明申请

US20090190268A1 MAGNETORESISTIVE DEVICE OF THE CPP TYPE, AND MAGNETIC DISK SYSTEM 有权
标题翻译： CPP类型的磁性装置和磁盘系统
公开(公告)号：US20090190268A1
公开(公告)日：2009-07-30
申请号：US12019205
申请日：2008-01-24
申请人： Takahiko Machita , Koji Shimazawa , Daisuke Miyauchi , Tsutomu Chou
发明人： Takahiko Machita , Koji Shimazawa , Daisuke Miyauchi , Tsutomu Chou
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3932 , G11B2005/3996
摘要： A magnetoresistive device of a CPP (current perpendicular to plane) structure includes a magnetoresistive unit sandwiched between a first substantially soft magnetic shield layer from below, and a second substantially soft magnetic shield layer from above, with a sense current applied in a stacking direction. The magnetoresistive unit includes a non-magnetic intermediate layer sandwiched between a first ferromagnetic layer, and a second ferromagnetic layer. At least one of the first and second shield layers is configured in a window frame of a planar shape, including a front frame-constituting portion and a back frame-constituting portion partially comprising a combination of a nonmagnetic gap layer with a bias magnetic field-applying layer. The combination of the nonmagnetic gap layer with the bias magnetic field-applying layer forms a closed magnetic path with magnetic flux going all the way around the window framework, turning the magnetization of the front frame-constituting portion into a single domain.
摘要翻译： CPP（电流垂直于平面）结构的磁阻器件包括夹在下面的第一基本上软磁屏蔽层和从上方的第二基本软磁屏蔽层之间的磁阻单元，其中沿堆叠方向施加感测电流。磁阻单元包括夹在第一铁磁层和第二铁磁层之间的非磁性中间层。第一屏蔽层和第二屏蔽层中的至少一个被配置在平面形状的窗框中，包括前框架构成部分和后框架构成部分，部分地包括具有偏磁场的非磁性间隙层的组合，应用层。非磁性间隙层与偏置磁场施加层的组合形成闭合的磁路，其中磁通量一直围绕窗框架，将前框架构成部分的磁化转变为单个畴。

30. 发明申请

US20090190272A1 MAGNETORESISTIVE DEVICE OF THE CPP TYPE, AND MAGNETIC DISK SYSTEM 有权
标题翻译： CPP类型的磁性装置和磁盘系统
公开(公告)号：US20090190272A1
公开(公告)日：2009-07-30
申请号：US12019202
申请日：2008-01-24
申请人： Takahiko Machita , Koji Shimazawa , Daisuke Miyauchi , Tsutomu Chou
发明人： Takahiko Machita , Koji Shimazawa , Daisuke Miyauchi , Tsutomu Chou
IPC分类号： G11B5/33
CPC分类号： G11B5/3932 , B82Y25/00 , G01R33/093 , G11B5/3912 , G11B5/398 , H01L43/08
摘要： The invention provides a magnetoresistive device with the CPP (current perpendicular to plane) structure, comprising a magnetoresistive unit, and a first shield layer and a second shield layer located and formed such that the magnetoresistive unit is sandwiched between them, with a sense current applied in a stacking direction, wherein said magnetoresistive unit comprises a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed such that said nonmagnetic intermediate layer is interposed between them, wherein said first shield layer, and said second shield layer is controlled by magnetization direction control means in terms of magnetization direction, and said first ferromagnetic layer, and said second ferromagnetic layer receives action such that there is an antiparallel magnetization state created, in which mutual magnetizations are in opposite directions, under the influences of magnetic actions of said first shield layer and said second shield layer. It is thus possible to achieve an antiparallel magnetization state for two ferromagnetic layers (free layers) with simple structure yet without being restricted by the material and specific structure of an intermediate film interposed between the two ferromagnetic layers (free layers). Further, it is possible to make improvements in linear recording densities by the adoption of a structure capable of making the “read gap length” (the gap between the upper and lower shield layers) short (narrow) thereby meeting recent demands for ultra-high recording densities. Furthermore, it is possible to obtain stable magnetoresistive changes so that much higher reliability is achievable.
摘要翻译：本发明提供了一种具有CPP（电流垂直于平面）结构的磁阻器件，包括磁阻单元，以及位于并形成第一屏蔽层和第二屏蔽层，使得磁阻单元夹在它们之间，并施加感应电流其中所述磁阻单元包括非磁性中间层，以及层叠并形成第一铁磁层和第二铁磁层，使得所述非磁性中间层介于它们之间，其中所述第一屏蔽层和所述第二屏蔽层在磁化方向上由磁化方向控制装置控制，并且所述第一铁磁层和所述第二铁磁层在磁性的影响下接收作用，使得存在产生相互磁化相反方向的反平行磁化状态所述第一屏蔽层的动作和所述第二屏蔽层。因此，对于具有简单结构的两个铁磁层（自由层）可以实现反平行磁化状态，而不受介于两个铁磁层（自由层）之间的中间膜的材料和特定结构的限制。此外，通过采用能够使“读取间隙长度”（上下屏蔽层之间的间隙）短（窄）的结构，可以改善线性记录密度，从而满足最近对超高的要求记录密度此外，可以获得稳定的磁阻变化，从而可实现更高的可靠性。

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