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21. 发明申请

US20060138407A1 Method for manufacturing semiconductor device having super junction construction 有权
标题翻译：具有超结构构造的半导体器件的制造方法
公开(公告)号：US20060138407A1
公开(公告)日：2006-06-29
申请号：US11356984
申请日：2006-02-21
申请人： Hitoshi Yamaguchi , Mikimasa Suzuki , Yoslhiyuki Hattori
发明人： Hitoshi Yamaguchi , Mikimasa Suzuki , Yoslhiyuki Hattori
IPC分类号： H01L29/08 , H01L35/24
CPC分类号： H01L29/7813 , H01L29/0634 , H01L29/1095
摘要： A semiconductor device includes a body region, a drift region having a first part and a second part, and a trench gate electrode. The body region is disposed on the drift region. The first and second parts extend in an extending direction so that the second part is adjacent to the first part. The trench gate electrode penetrates the body region and reaches the drift region so that the trench gate electrode faces the body region and the drift region through an insulation layer. The trench gate electrode extends in a direction crossing with the extending direction of the first and second parts. The first part includes a portion near the trench gate electrode, which has an impurity concentration equal to or lower than that of the body region.
摘要翻译：半导体器件包括主体区域，具有第一部分和第二部分的漂移区域以及沟槽栅电极。身体区域设置在漂移区域上。第一和第二部分沿延伸方向延伸，使得第二部分与第一部分相邻。沟槽栅电极穿透体区并到达漂移区，使得沟槽栅电极通过绝缘层面向体区和漂移区。沟槽栅电极沿与第一和第二部分的延伸方向交叉的方向延伸。第一部分包括沟槽栅电极附近的部分，其杂质浓度等于或低于体区的杂质浓度。

22. 发明授权

US5503878A Method of preparing thin film resistors 失效
标题翻译：制备薄膜电阻的方法
公开(公告)号：US5503878A
公开(公告)日：1996-04-02
申请号：US292050
申请日：1994-08-18
申请人： Mikimasa Suzuki , Makio Iida , Makoto Muto
发明人： Mikimasa Suzuki , Makio Iida , Makoto Muto
IPC分类号： H01C17/06 , H01C17/12 , H01L21/02 , H01L21/822 , H01L27/04 , H05H1/00
CPC分类号： H01L28/24
摘要： A method of preparing a patterned thin film resistor that is appropriately used in combination with semiconductor devices. The method comprises a thin film forming step comprising forming a thin film of a compound comprising at least one metal on an oxide film such as a silicon oxide film; a masking step comprising covering a desired area of the thin film by an organic material; a patterning step comprising converting to plasma a gas mixture comprising a fluorine compound gas and oxygen, and removing an area of the thin film, that is not covered by the organic material by exposing it to a gas containing activated fluorine by the plasma conversion; and a removing step comprising removing the organic material remaining on the desired area of the thin film.
摘要翻译：一种制备适合与半导体器件组合使用的图案化薄膜电阻器的方法。该方法包括薄膜形成步骤，包括在诸如氧化硅膜的氧化膜上形成包含至少一种金属的化合物的薄膜; 掩模步骤，包括用有机材料覆盖所述薄膜的期望区域; 一种图形化步骤，包括将包含氟化合物气体和氧气的气体混合物转化成等离子体，并且通过用等离子体转换将其暴露于含有活性氟的气体中来除去未被有机材料覆盖的薄膜区域; 以及去除步骤，包括去除残留在所述薄膜的所需区域上的有机材料。

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