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21. 发明授权

US09442368B2 Method of making an extreme ultraviolet pellicle 有权
标题翻译：制造极紫外线防护薄膜的方法
公开(公告)号：US09442368B2
公开(公告)日：2016-09-13
申请号：US14980469
申请日：2015-12-28
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Chih-Tsung Shih , Tien-Hsi Lee , Chia-Jen Chen , Shang-Chieh Chien , Shinn-Sheng Yu , Jeng-Horng Chen , Anthony Yen
IPC分类号： G03F1/64 , B29C71/02 , G03F7/20
CPC分类号： G03F1/64 , B29C71/02 , B29C2071/022 , G03F1/62 , G03F7/2002
摘要： The present disclosure relates to a method of forming an extreme ultraviolet (EUV) pellicle having an pellicle film connected to a pellicle frame without a supportive mesh, and an associated apparatus. In some embodiments, the method is performed by forming a cleaving plane within a substrate. A pellicle frame is attached to an upper surface of the substrate, and the substrate is cleaved along the cleaving plane to form a pellicle film attached to the pellicle frame. The method forms the pellicle without using a support structure, which may block EUV radiation and cause substantial non-uniformities in the intensity of EUV radiation incident on an EUV reticle.
摘要翻译：本发明涉及一种形成极紫外（EUV）防护薄膜组件的方法，所述防护薄膜组件具有连接到没有支撑网的防护薄膜框架上的防护薄膜组件及相关装置。在一些实施例中，通过在衬底内形成切割平面来执行该方法。防护薄膜组件框架附接到基板的上表面，并且基板沿着切割平面被切割以形成附着到防护薄膜框架上的防护薄膜组件。该方法不使用支撑结构形成防护薄膜组件，其可以阻挡EUV辐射并且在EUV掩模版上入射的EUV辐射的强度引起实质上的不均匀性。

22. 发明授权

US08988652B2 Method and apparatus for ultraviolet (UV) patterning with reduced outgassing 有权
标题翻译：减少放气的紫外（UV）图案化方法和设备
公开(公告)号：US08988652B2
公开(公告)日：2015-03-24
申请号：US13654750
申请日：2012-10-18
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Shu-Hao Chang , Tsiao-Chen Wu , Chia-Hao Hsu , Chia-Chen Chen , Ying-Yu Chen , Tzu-Li Lee , Shang-Chieh Chien , Jeng-Horng Chen , Anthony Yen
IPC分类号： G03F7/20
CPC分类号： G03F7/2002 , G03F7/20 , G03F7/70916 , G03F7/70933
摘要： A method and apparatus for ultraviolet (UV) and extreme ultraviolet (EUV) lithography patterning is provided. A UV or EUV light beam is generated and directed to the surface of a substrate disposed on a stage and coated with photoresist. A laminar flow of a layer of inert gas is directed across and in close proximity to the substrate surface coated with photoresist during the exposure, i.e. lithography operation. The inert gas is exhausted quickly and includes a short resonance time at the exposure location. The inert gas flow prevents flue gasses and other contaminants produced by outgassing of the photoresist, to precipitate on and contaminate other features of the lithography apparatus.
摘要翻译：提供了紫外线（UV）和极紫外（EUV）光刻图案的方法和装置。产生UV或EUV光束并将其引导到设置在载物台上并涂覆有光致抗蚀剂的基板的表面。惰性气体层的层流被引导穿过并且紧邻在曝光期间涂覆有光致抗蚀剂的基底表面，即光刻操作。惰性气体迅速耗尽并且在曝光位置包括短的共振时间。惰性气体流动防止烟气和其它由光致抗蚀剂脱气产生的污染物沉淀并污染光刻设备的其它特征。

23. 发明申请

US20150037712A1 Extreme Ultraviolet (EUV) Mask, Method Of Fabricating The EUV Mask And Method Of Inspecting The EUV Mask 有权
标题翻译：极紫外线（EUV）面膜，制造EUV面膜的方法和检查EUV面膜的方法
公开(公告)号：US20150037712A1
公开(公告)日：2015-02-05
申请号：US13955164
申请日：2013-07-31
申请人： Taiwan Semiconductor Manufacturing Co., LTD.
发明人： Chih-Tsung Shih , Yen-Cheng Lu , Shinn-Sheng Yu , Jeng-Horng Chen , Anthony Yen
IPC分类号： G03F1/22 , G03F1/84
CPC分类号： G03F1/22 , G03F1/24 , G03F1/38 , G03F1/52 , G03F1/84
摘要： An out-of-band (OoB) suppression layer is applied on a reflective multiplayer (ML) coating, so as to avoid the OoB reflection and to enhance the optical contrast at 13.5 nm A material having a low reflectivity at wavelength of 193-257 nm, for example, silicon carbide (SiC), is used as the OoB suppression layer. A method of fabricating an EUV mask having the OoB suppression layer and a method of inspecting an EUV mask having the OoB suppression are also provided.
摘要翻译：将带外（OoB）抑制层施加在反射多人（ML）涂层上，以避免OoB反射并增强13.5nm处的光学对比度。在波长193-257处具有低反射率的材料使用例如碳化硅（SiC）作为OoB抑制层。还提供了制造具有OoB抑制层的EUV掩模的方法和检查具有OoB抑制的EUV掩模的方法。

24. 发明申请

US20190121228A1 Extreme Ultraviolet Lithography System, Device, and Method for Printing Low Pattern Density Features 审中-公开
公开(公告)号：US20190121228A1
公开(公告)日：2019-04-25
申请号：US16220324
申请日：2018-12-14
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Yen-Cheng Lu , Shinn-Sheng Yu , Jeng-Horng Chen , Anthony Yen
IPC分类号： G03F1/26 , G03F7/20
摘要： A lithography system includes a radiation source configured to generate an extreme ultraviolet (EUV) light. The lithography system includes a mask that defines one or more features of an integrated circuit (IC). The lithography system includes an illuminator configured to direct the EUV light onto the mask. The mask diffracts the EUV light into a 0-th order ray and a plurality of higher order rays. The lithography system includes a wafer stage configured to secure a wafer that is to be patterned according to the one or more features defined by the mask. The lithography system includes a pupil phase modulator positioned in a pupil plane that is located between the mask and the wafer stage. The pupil phase modulator is configured to change a phase of the 0-th order ray.

25. 发明授权

US09664999B2 Method of making an extreme ultraviolet pellicle 有权
公开(公告)号：US09664999B2
公开(公告)日：2017-05-30
申请号：US15245499
申请日：2016-08-24
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Chih-Tsung Shih , Tien-Hsi Lee , Chia-Jen Chen , Shang-Chieh Chien , Shinn-Sheng Yu , Jeng-Horng Chen , Anthony Yen
IPC分类号： G03F1/64 , G03F1/62 , B29C71/02 , G03F7/20
CPC分类号： G03F1/64 , B29C71/02 , B29C2071/022 , G03F1/62 , G03F7/2002
摘要： The present disclosure relates to an extreme ultraviolet (EUV) pellicle having a pellicle film connected to a pellicle frame. In some embodiments, the EUV pellicle has a substrate, and an adhesive material disposed onto the substrate. A pellicle frame is connected to the substrate by way of the adhesive material. The pellicle frame is configured to mount the substrate to an extreme ultraviolet (EUV) reticle.

26. 发明授权

US09570302B1 Method of patterning a material layer 有权
标题翻译：图案化材料层的方法
公开(公告)号：US09570302B1
公开(公告)日：2017-02-14
申请号：US15040533
申请日：2016-02-10
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Shu-Hao Chang , Kuo-Chang Kau , Kevin Huang , Jeng-Horng Chen
IPC分类号： H01L21/027 , H01L21/02
CPC分类号： H01L21/02172 , H01L21/02118 , H01L21/3105 , H01L21/311 , H01L21/32
摘要： A method of fabricating a semiconductor device is disclosed. The method includes forming a radiation-removable-material (RRM) layer over a substrate and removing a first portion of the RRM layer in a first region of the substrate by exposing the first portion of the RRM layer to a radiation beam. A second portion of the RRM layer in a second region of the substrate remains after the removing of the first portion of the RRM layer in the first region. The method also includes forming a selective-forming-layer (SFL) over the second portion of the RRM layer in the second region of the substrate and forming a material layer over the first region of the substrate.
摘要翻译：公开了制造半导体器件的方法。该方法包括在衬底上形成辐射可去除材料（RRM）层，并通过将RRM层的第一部分暴露于辐射束来移除衬底的第一区域中的RRM层的第一部分。在去除第一区域中的RRM层的第一部分之后，在衬底的第二区域中的RRM层的第二部分保留。该方法还包括在衬底的第二区域中的RRM层的第二部分上形成选择性形成层（SFL），并在衬底的第一区域上形成材料层。

27. 发明申请

US20160370705A1 ROTARY EUV COLLECTOR 有权
公开(公告)号：US20160370705A1
公开(公告)日：2016-12-22
申请号：US15249989
申请日：2016-08-29
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Shang-Chieh Chien , Shu-Hao Chang , Jui-Ching Wu , Tsung-Yu Chen , Tzu-Hsiang Chen , Ming-Chin Chien , Chia-Chen Chen , Jeng-Horng Chen
IPC分类号： G03F7/20 , G02B7/182 , G21K1/06 , G02B5/08
CPC分类号： G03F7/7015 , G02B5/0891 , G02B7/1821 , G03F7/2008 , G03F7/2037 , G03F7/70033 , G03F7/70175 , G03F7/70916 , G03F7/70925 , G21K1/067
摘要： An EUV collector is rotated between or during operations of an EUV photolithography system. Rotating the EUV collector causes contamination to distribute more evenly over the collector's surface. This reduces the rate at which the EUV photolithography system loses image fidelity with increasing contamination and thereby increases the collector lifetime. Rotating the collector during operation of the EUV photolithography system can induce convection and reduce the contamination rate. By rotating the collector at sufficient speed, some contaminating debris can be removed through the action of centrifugal force.

28. 发明申请

US20160363857A1 METHOD OF MAKING AN EXTREME ULTRAVIOLET PELLICLE 有权
标题翻译：制备极端超紫外线胶囊的方法
公开(公告)号：US20160363857A1
公开(公告)日：2016-12-15
申请号：US15245499
申请日：2016-08-24
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Chih-Tsung Shih , Tien-Hsi Lee , Chia-Jen Chen , Shang-Chieh Chien , Shinn-Sheng Yu , Jeng-Horng Chen , Anthony Yen
IPC分类号： G03F1/64
CPC分类号： G03F1/64 , B29C71/02 , B29C2071/022 , G03F1/62 , G03F7/2002
摘要： The present disclosure relates to an extreme ultraviolet (EUV) pellicle having a pellicle film connected to a pellicle frame. In some embodiments, the EUV pellicle has a substrate, and an adhesive material disposed onto the substrate. A pellicle frame is connected to the substrate by way of the adhesive material. The pellicle frame is configured to mount the substrate to an extreme ultraviolet (EUV) reticle.
摘要翻译：本发明涉及一种具有与防护薄膜组件框架连接的防护薄膜的极紫外（EUV）防护薄膜组件。在一些实施方案中，EUV防护薄膜具有基材和设置在基材上的粘合剂材料。防护薄膜组件框架通过粘合剂材料连接到基底。防护薄膜框架被配置为将基板安装到极紫外（EUV）掩模版上。

29. 发明授权

US09429858B2 Rotary EUV collector 有权
标题翻译：旋转EUV收集器
公开(公告)号：US09429858B2
公开(公告)日：2016-08-30
申请号：US14035268
申请日：2013-09-24
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Shang-Chieh Chien , Shu-Hao Chang , Jui-Ching Wu , Tsung-Yu Chen , Tzu-Hsiang Chen , Ming-Chin Chien , Chia-Chen Chen , Jeng-Horng Chen
IPC分类号： G03F7/20
CPC分类号： G03F7/7015 , G02B5/0891 , G02B7/1821 , G03F7/2008 , G03F7/2037 , G03F7/70033 , G03F7/70175 , G03F7/70916 , G03F7/70925 , G21K1/067
摘要： An EUV collector is rotated between or during operations of an EUV photolithography system. Rotating the EUV collector causes contamination to distribute more evenly over the collector's surface. This reduces the rate at which the EUV photolithography system loses image fidelity with increasing contamination and thereby increases the collector lifetime. Rotating the collector during operation of the EUV photolithography system can induce convection and reduce the contamination rate. By rotating the collector at sufficient speed, some contaminating debris can be removed through the action of centrifugal force.
摘要翻译： EUV收集器在EUV光刻系统的操作期间或之间旋转。旋转EUV收集器导致污染物更均匀地分布在收集器的表面上。这降低了EUV光刻系统随着污染增加而失去图像保真度并从而增加了集电器寿命的速率。在EUV光刻系统运行期间旋转收集器可以引起对流并降低污染率。通过以足够的速度旋转收集器，可以通过离心力的作用去除一些污染的碎屑。

30. 发明授权

US09256123B2 Method of making an extreme ultraviolet pellicle 有权
标题翻译：制造极紫外线防护薄膜的方法
公开(公告)号：US09256123B2
公开(公告)日：2016-02-09
申请号：US14259194
申请日：2014-04-23
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Chih-Tsung Shih , Tien-Hsi Lee , Chia-Jen Chen , Shang-Chieh Chien , Shinn-Sheng Yu , Jeng-Horng Chen , Anthony Yen
IPC分类号： G03F1/64 , G03F7/20 , B29C71/02
CPC分类号： G03F1/64 , B29C71/02 , B29C2071/022 , G03F1/62 , G03F7/2002
摘要： The present disclosure relates to a method of forming an EUV pellicle having an pellicle film connected to a pellicle frame without a supportive mesh, and an associated apparatus. In some embodiments, the method is performed by forming a cleaving plane within a substrate at a position parallel to a top surface of the substrate. A pellicle frame is attached to the top surface of the substrate. The substrate is cleaved along the cleaving plane to form a pellicle film comprising a thinned substrate coupled to the pellicle frame. Prior to cleaving the substrate, the substrate is operated upon to reduce structural damage to the top surface of substrate during formation of the cleaving plane and/or during cleaving the substrate. Reducing structural damage to the top surface of the substrate improves the durability of the thinned substrate and removes a need for a support structure for the pellicle film.
摘要翻译：本发明涉及一种形成具有连接到没有支撑网的防护薄膜框架的防护薄膜组件的EUV防护薄膜组件的方法，以及相关联的装置。在一些实施例中，该方法通过在平行于衬底顶表面的位置处在衬底内形成切割平面来进行。防护薄膜组件框架附接到基板的顶表面。基底沿着切割平面切割以形成防护薄膜，该薄膜包含连接到防护薄膜框架上的薄化基底。在切割基板之前，操作基板以在形成切割平面期间和/或在分离基板期间减少对基板顶表面的结构损伤。降低对基板顶表面的结构损伤提高了薄板基板的耐久性，并且消除了对防护薄膜的支撑结构的需要。

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