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21. 发明申请

US20120056646A1 SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME 有权
标题翻译：半导体器件及其驱动方法
公开(公告)号：US20120056646A1
公开(公告)日：2012-03-08
申请号：US13213673
申请日：2011-08-19
申请人： Kazunori WATANABE , Makoto YANAGISAWA
发明人： Kazunori WATANABE , Makoto YANAGISAWA
IPC分类号： H03K17/06 , H01L29/786
CPC分类号： H01L29/7869 , H01L29/42384 , H01L29/78645 , H01L29/78696 , H03K2017/6878
摘要： An object is to alleviate the concentration of an electric field in a semiconductor device. A gate electrode and a drain electrode are provided not to overlap with each other, and an electric-field control electrode is provided between the gate electrode and the drain electrode over a top surface. Insulating layers are provided between the gate electrode and a semiconductor layer and between the electric-field control electrode and the semiconductor layer, and the insulating layer provided between the electric-field control electrode and the semiconductor layer has a larger thickness than the insulating layer provided between the gate electrode and the semiconductor layer. Further, when the semiconductor device is driven, the potential of the electric-field control electrode may be higher than or equal to a source potential and lower than a gate potential, and for example, connection between the electric-field control electrode and the source potential enables such a structure.
摘要翻译：目的是减轻半导体器件中的电场的集中。栅极电极和漏极电极被设置为不彼此重叠，并且电场控制电极在顶表面上设置在栅电极和漏电极之间。绝缘层设置在栅电极和半导体层之间以及电场控制电极和半导体层之间，并且设置在电场控制电极和半导体层之间的绝缘层具有比所提供的绝缘层更大的厚度在栅电极和半导体层之间。此外，当半导体器件被驱动时，电场控制电极的电位可以高于或等于源极电位并且低于栅极电位，并且例如电场控制电极和源极之间的连接潜力可以实现这样的结构。

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