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    • 22. 发明授权
    • Method and apparatus for detecting an insufficient phase current in a permanent magnet synchronous motor
    • 用于检测永磁同步电动机中的相电流不足的方法和装置
    • US08065050B2
    • 2011-11-22
    • US12109457
    • 2008-04-25
    • Stephen T. WestWei D. WangSean E. Gleason
    • Stephen T. WestWei D. WangSean E. Gleason
    • G01M17/00G06F7/02
    • H02P29/032
    • A method is provided for detecting an insufficient or missing phase current in a permanent magnet synchronous motor, and includes determining a composite vector position of a combined three-phase phase current with respect to a stationary portion of the motor, and assigning a sector to the position. The method includes comparing the phase current to a calibrated threshold current corresponding to the sector, and executing a response when the absolute value is less than the threshold. A vehicle includes an energy storage device (ESD), a motor/generator configured as a permanent magnet synchronous motor, a voltage inverter, and a bus for conducting DC current from the ESD to the inverter. A controller detects an insufficient phase current, determines a current vector position of the three-phase AC, assigns a sector to the position, and executes a response when an absolute value of the phase current is less than a calibrated threshold.
    • 提供了一种用于检测永磁同步电动机中不足或缺少相电流的方法,包括确定组合的三相相电流相对于电动机的静止部分的复合矢量位置,并将扇区分配给 位置。 该方法包括将相电流与对应于扇区的校准阈值电流进行比较,以及当绝对值小于阈值时执行响应。 车辆包括能量存储装置(ESD),被配置为永磁同步电动机的电动机/发电机,电压逆变器和用于将DC电流从ESD引导到逆变器的总线。 控制器检测到不足的相电流,确定三相AC的当前矢量位置,将该扇区分配给该位置,并且当相电流的绝对值小于校准阈值时执行响应。
    • 27. 发明授权
    • Krypton sputtering of thin tungsten layer for integrated circuits
    • 用于集成电路的薄钨层的氪溅射
    • US07790604B2
    • 2010-09-07
    • US11841205
    • 2007-08-20
    • Wei D. WangSrinivas GandikotaKishore Lavu
    • Wei D. WangSrinivas GandikotaKishore Lavu
    • H01L21/00
    • C23C14/16C23C14/0641H01L21/28061H01L29/4941
    • A method of depositing a bilayer of tungsten over tungsten nitride by a plasma sputtering process in which krypton is used as the sputter working gas during the tungsten deposition. Argon may be used as the sputtering working gas during the reactive sputtering deposition of tungsten nitride. The beneficial effect of reduction of tungsten resistivity is increased when the thickness of the tungsten layer is less than 50 nm and further increased when less than 35 nm. The method may be used in forming a gate stack including a polysilicon layer over a gate oxide layer over a silicon gate region of a MOS transistor in which the tungsten nitride acts as a barrier. A plasma sputter chamber in which the invention may be practiced includes gas sources of krypton, argon, and nitrogen.
    • 通过等离子体溅射工艺在钨沉积中使用氪作为溅射工作气体的钨沉积钨层的方法。 在氮化钨的反应溅射沉积期间,可以使用氩作为溅射工作气体。 当钨层的厚度小于50nm时,降低钨电阻率的有益效果增加,当小于35nm时,钨电阻率的降低进一步增加。 该方法可以用于在MOS晶体管的硅栅极区域上的栅极氧化物层上形成包括多晶硅层的栅极堆叠,其中氮化钨作为势垒。 可以实施本发明的等离子体溅射室包括氪气,氩气和氮气的气源。
    • 28. 发明授权
    • Asymmetric rotating sidewall magnet ring for magnetron sputtering
    • 用于磁控溅射的不对称旋转侧壁磁环
    • US06837975B2
    • 2005-01-04
    • US10211473
    • 2002-08-01
    • Wei D. WangPraburam Gopalraja
    • Wei D. WangPraburam Gopalraja
    • C23C14/04C23C14/16C23C14/35H01J37/34H01L21/768
    • H01J37/3455C23C14/046C23C14/165C23C14/35H01J37/3405H01L21/76877
    • A magnetron system for a sputtering target having an annular vault facing the wafer to be coated and having inner and outer sidewalls and a roof. A small magnetron is positioned over the roof. A first magnet assembly having a first magnet polarity along the target axis is positioned behind the inner sidewall. A second magnet assembly having an opposed second opposed magnetic polarity is disposed in back of the outer sidewall and has magnetic strength much greater than the first magnet assembly but its strength is asymmetrically distributed about the target axis. The second magnet assembly and the roof assembly are rotated together about the target axis. The rotating asymmetric sidewall magnet assembly may also be used with a hollow-cathode target, with or without a roof magnetron.
    • 一种用于溅射靶的磁控管系统,其具有面向待涂覆的晶片的环形拱顶并具有内侧壁和外侧壁以及屋顶。 一个小磁控管位于屋顶上。 沿着目标轴线具有第一磁体极性的第一磁体组件位于内侧壁的后面。 具有相对的第二相对磁极性的第二磁体组件设置在外侧壁的后部,并且具有比第一磁体组件大得多的磁强度,但是其强度围绕目标轴线不对称地分布。 第二磁体组件和屋顶组件围绕目标轴线一起旋转。 旋转的不对称侧壁磁体组件也可以与具有或不具有屋顶磁控管的中空阴极靶一起使用。
    • 29. 发明授权
    • Integrated process for copper via filling using a magnetron and target producing highly energetic ions
    • 通过使用磁控管进行填充的铜的集成工艺和产生高能离子的靶
    • US06277249B1
    • 2001-08-21
    • US09518180
    • 2000-03-02
    • Praburam GopalrajaJianming FuFusen ChenGirish DixitZheng XuSankaram AthreyaWei D. WangAshok K. Sinha
    • Praburam GopalrajaJianming FuFusen ChenGirish DixitZheng XuSankaram AthreyaWei D. WangAshok K. Sinha
    • C23C1435
    • H01L21/76844C23C14/35H01J37/3405H01J37/342H01J37/3423H01J37/3455H01J37/3458H01L21/2855H01L21/76805H01L21/76843H01L21/76862H01L21/76865H01L21/76873H01L2221/1089
    • A target and magnetron for a plasma sputter reactor. The target has an annular trough facing the wafer to be sputter coated. Various types of magnetic means positioned around the trough create a magnetic field supporting a plasma extending over a large volume of the trough. For example, the magnetic means may include magnets disposed on one side within a radially inner wall of the trough and on another side outside of a radially outer wall of the trough to create a magnetic field extending across the trough, to thereby support a high-density plasma extending from the top to the bottom of the trough. The large plasma volume increases the probability that the sputtered metal atoms will become ionized. The magnetic means may include a magnetic coil, may include additional magnets in back of the trough top wall to increase sputtering there, and may include confinement magnets near the bottom of the trough sidewalls. The magnets in back of the top wall may have an outer magnet surrounding an inner magnet of the opposite polarity. The high aspect ratio of the trough also reduces asymmetry in coating the sidewalls of a deep hole at the edge of the wafer. An integrated copper via filling process includes a first step of highly ionized sputter deposition of copper, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and electroplating copper into the hole to complete the metallization.
    • 用于等离子体溅射反应器的靶和磁控管。 目标具有面向待溅射涂覆的晶片的环形槽。 位于槽周围的各种磁性装置形成一个支撑等离子体的磁场,该等离子体延伸在大容积的槽上。 例如,磁性装置可以包括设置在槽的径向内壁中的一侧上并且在槽的径向外壁外侧的另一侧上的磁体,以产生延伸穿过槽的磁场, 密度等离子体从槽的顶部延伸到底部。 大的等离子体体积增加了溅射的金属原子将被电离的可能性。 磁性装置可以包括磁性线圈,可以在槽顶壁的后面包括另外的磁体,以在那里增加溅射,并且可以包括靠近槽侧壁底部的约束磁体。 顶壁后面的磁体可以具有围绕相反极性的内磁体的外磁体。 槽的高纵横比也降低了在晶片边缘涂覆深孔侧壁的不对称性。 集成的铜通孔填充工艺包括铜的高度电离溅射沉积的第一步骤,更中性的,更低能量的溅射沉积铜以完成种子层的第二步骤,以及将铜电镀到孔中以完成金属化。