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21. 发明申请

US20080308534A1 PYROMETER FOR LASER ANNEALING SYSTEM COMPATIBLE WITH AMORPHOUS CARBON OPTICAL ABSORBER LAYER 有权
标题翻译：激光退火系统与不对称碳光吸收层兼容的紫外光
公开(公告)号：US20080308534A1
公开(公告)日：2008-12-18
申请号：US11764738
申请日：2007-06-18
申请人： Jiping Li , Bruce E. Adams , Timothy N. Thomas , Aaron Muir Hunter , Abhilash J. Mayur , Rajesh S. Ramanujam
发明人： Jiping Li , Bruce E. Adams , Timothy N. Thomas , Aaron Muir Hunter , Abhilash J. Mayur , Rajesh S. Ramanujam
IPC分类号： B23K26/08 , H01L21/66
CPC分类号： B23K26/0665 , B23K26/03 , B23K26/032 , B23K26/034 , B23K26/18 , B23K2101/40
摘要： In a laser annealing system for workpieces such as semiconductor wafers, a pyrometer wavelength response band is established within a narrow window lying between the laser emission band and a fluorescence emission band from the optical components of the laser system, the pyrometer response band lying in a wavelength region at which the optical absorber layer on the workpiece has an optical absorption coefficient as great as or greater than the underlying workpiece. A multi-layer razor-edge interference filter having a 5-8 nm wavelength cut-off edge transition provides the cut-off of the laser emission at the bottom end of the pyrometer response band.
摘要翻译：在用于诸如半导体晶片的工件的激光退火系统中，在位于激光发射带和来自激光系统的光学部件的荧光发射带之间的狭窄窗口内建立高温计波长响应带，高温计响应带位于工件上的光吸收层的光吸收系数大于或大于下面工件的波长区域。具有5-8nm波长截止边缘跃迁的多层剃刀边缘干涉滤光器提供在高温计响应带的底端处的激光发射的截止。

22. 发明申请

US20130055731A1 CRYSTALLIZATION METHODS 有权
标题翻译：结晶方法
公开(公告)号：US20130055731A1
公开(公告)日：2013-03-07
申请号：US13601069
申请日：2012-08-31
申请人： Bruce E. Adams , Aaron Muir Hunter , Stephen Moffatt
发明人： Bruce E. Adams , Aaron Muir Hunter , Stephen Moffatt
IPC分类号： F25D31/00
CPC分类号： H01L21/02686 , H01L21/02521 , H01L21/268
摘要： Apparatus and methods of treating a substrate with an amorphous semiconductor layer, or a semiconductor layer having small crystals, to form large crystals in the substrate are described. A treatment area of the substrate is identified and melted using a progressive melting process of delivering pulsed energy to the treatment area. The treatment area is then recrystallized using a progressive crystallization process of delivering pulsed energy to the area. The pulsed energy delivered during the progressive crystallization process is selected to convert the small crystals into large crystals as the melted material freezes.
摘要翻译：描述了用非晶半导体层或具有小晶体的半导体层处理衬底以在衬底中形成大晶体的装置和方法。使用将脉冲能量递送到处理区域的渐进熔融方法来鉴定和熔化基底的处理区域。然后使用将脉冲能量递送到该区域的逐步结晶过程将处理区域重结晶。选择渐进式结晶过程中输送的脉冲能量，以使熔融材料冻结时将小晶体转化为大晶体。

23. 发明申请

US20110065264A1 METHODS OF SOLID PHASE RECRYSTALLIZATION OF THIN FILM USING PULSE TRAIN ANNEALING METHOD 有权
标题翻译：使用脉冲火焰退火方法的薄膜固相重组方法
公开(公告)号：US20110065264A1
公开(公告)日：2011-03-17
申请号：US12764723
申请日：2010-04-21
申请人： STEPHEN MOFFATT , Aaron Muir Hunter , Bruce E. Adams
发明人： STEPHEN MOFFATT , Aaron Muir Hunter , Bruce E. Adams
IPC分类号： H01L21/20
CPC分类号： H01L21/02686 , C30B13/24 , C30B29/06 , H01L21/02521
摘要： Embodiments of the present invention provide methods of solid phase recrystallization of thin film using a plurality of pulses of electromagnetic energy. In one embodiment, the methods of the present invention may be used to anneal an entire substrate surface or selected regions of a surface of a substrate by delivering a plurality of pluses of energy to a crystalline seed region or layer upon which an amorphous layer is deposited to recrystallize the amorphous layer so that it has the same grain structure and crystal orientation as that of the underlying crystalline seed region or layer.
摘要翻译：本发明的实施例提供使用多个电磁能脉冲进行薄膜固相重结晶的方法。在一个实施例中，本发明的方法可以用于通过将多个能量递送到沉积非晶层的结晶种子区域或层来退火整个衬底表面或衬底的表面的选定区域使非晶层重结晶，使其具有与下面的结晶种子区域或层相同的晶粒结构和晶体取向。

24. 发明授权

US08232503B2 Pyrometer for laser annealing system 有权
标题翻译：激光退火系统用高温计
公开(公告)号：US08232503B2
公开(公告)日：2012-07-31
申请号：US12886809
申请日：2010-09-21
申请人： Jiping Li , Bruce E. Adams , Timothy N. Thomas , Aaron Muir Hunter , Abhilash J. Mayur , Rajesh S. Ramanujam
发明人： Jiping Li , Bruce E. Adams , Timothy N. Thomas , Aaron Muir Hunter , Abhilash J. Mayur , Rajesh S. Ramanujam
IPC分类号： B23K26/08
CPC分类号： B23K26/0665 , B23K26/03 , B23K26/032 , B23K26/034 , B23K26/18 , B23K2101/40
摘要： In a laser annealing system for workpieces such as semiconductor wafers, a pyrometer wavelength response band is established within a narrow window lying between the laser emission band and a fluorescence emission band from the optical components of the laser system, the pyrometer response band lying in a wavelength region at which the optical absorber layer on the workpiece has an optical absorption coefficient as great as or greater than the underlying workpiece. A multi-layer razor-edge interference filter having a 5-8 nm wavelength cut-off edge transition provides the cut-off of the laser emission at the bottom end of the pyrometer response band.
摘要翻译：在用于诸如半导体晶片的工件的激光退火系统中，在位于激光发射带和来自激光系统的光学部件的荧光发射带之间的狭窄窗口内建立高温计波长响应带，高温计响应带位于工件上的光吸收层的光吸收系数大于或大于下面工件的波长区域。具有5-8nm波长截止边缘跃迁的多层剃刀边缘干涉滤光器提供在高温计响应带的底端处的激光发射的截止。

25. 发明授权

US09373511B2 Methods for crystallizing a substrate using energy pulses and freeze periods 有权
标题翻译：使用能量脉冲和冷冻时间结晶基板的方法
公开(公告)号：US09373511B2
公开(公告)日：2016-06-21
申请号：US13601069
申请日：2012-08-31
申请人： Bruce E. Adams , Aaron Muir Hunter , Stephen Moffatt
发明人： Bruce E. Adams , Aaron Muir Hunter , Stephen Moffatt
IPC分类号： C30B1/02 , H01L21/268 , H01L21/02
CPC分类号： H01L21/02686 , H01L21/02521 , H01L21/268
摘要： Apparatus and methods of treating a substrate with an amorphous semiconductor layer, or a semiconductor layer having small crystals, to form large crystals in the substrate are described. A treatment area of the substrate is identified and melted using a progressive melting process of delivering pulsed energy to the treatment area. The treatment area is then recrystallized using a progressive crystallization process of delivering pulsed energy to the area. The pulsed energy delivered during the progressive crystallization process is selected to convert the small crystals into large crystals as the melted material freezes.
摘要翻译：描述了用非晶半导体层或具有小晶体的半导体层处理衬底以在衬底中形成大晶体的装置和方法。使用将脉冲能量递送到处理区域的渐进熔融方法来鉴定和熔化基底的处理区域。然后使用将脉冲能量递送到该区域的逐步结晶过程将处理区域重结晶。选择渐进式结晶过程中输送的脉冲能量，以使熔融材料冻结时将小晶体转化为大晶体。

26. 发明授权

US08247317B2 Methods of solid phase recrystallization of thin film using pulse train annealing method 有权
标题翻译：使用脉冲串退火法对薄膜进行固相重结晶的方法
公开(公告)号：US08247317B2
公开(公告)日：2012-08-21
申请号：US12764723
申请日：2010-04-21
申请人： Stephen Moffatt , Aaron Muir Hunter , Bruce E. Adams
发明人： Stephen Moffatt , Aaron Muir Hunter , Bruce E. Adams
IPC分类号： H01L21/20
CPC分类号： H01L21/02686 , C30B13/24 , C30B29/06 , H01L21/02521
摘要： Embodiments of the present invention provide methods of solid phase recrystallization of thin film using a plurality of pulses of electromagnetic energy. In one embodiment, the methods of the present invention may be used to anneal an entire substrate surface or selected regions of a surface of a substrate by delivering a plurality of pluses of energy to a crystalline seed region or layer upon which an amorphous layer is deposited to recrystallize the amorphous layer so that it has the same grain structure and crystal orientation as that of the underlying crystalline seed region or layer.
摘要翻译：本发明的实施例提供使用多个电磁能脉冲进行薄膜固相重结晶的方法。在一个实施例中，本发明的方法可以用于通过将多个能量递送到沉积非晶层的结晶种子区域或层来退火整个衬底表面或衬底的表面的选定区域使非晶层重结晶，使其具有与下面的结晶种子区域或层相同的晶粒结构和晶体取向。

27. 发明授权

US08432613B2 Multi-stage optical homogenization 有权
标题翻译：多级光学均匀化
公开(公告)号：US08432613B2
公开(公告)日：2013-04-30
申请号：US12762351
申请日：2010-04-18
申请人： Dean C. Jennings , Timothy N. Thomas , Samuel C. Howells , Bruce E. Adams , Jiping Li
发明人： Dean C. Jennings , Timothy N. Thomas , Samuel C. Howells , Bruce E. Adams , Jiping Li
IPC分类号： G02B27/10
CPC分类号： H01L21/67115 , B23K26/0006 , B23K26/0622 , B23K26/0648 , B23K26/0652 , B23K26/12 , B23K26/125 , B23K26/127 , B23K26/352 , B23K26/354 , B23K2101/40 , B23K2103/56 , G02B27/0927 , G02B27/0961 , H01L21/02678 , H01L21/02686 , H01L21/268
摘要： Substrate processing equipment and methods are used to improve the uniformity of illumination across an illuminated portion of a substrate by processing light with multiple optical homogenizers. The multiple optical homogenizers each include micro-lens arrays and Fourier lens. The multiple optical homogenizers are arranged so that the output numerical aperture of one of the optical homogenizers is within 5% of the input numerical aperture of another optical homogenizer.
摘要翻译：基板处理设备和方法用于通过用多个光学均化器处理光线来改善衬底的照射部分上的照明的均匀性。多个光学均质器各自包括微透镜阵列和傅里叶透镜。多个光学均质器被布置成使得一个光学均质器的输出数值孔径在另一个光学均化器的输入数值孔径的5％内。

28. 发明申请

US20100266268A1 Multi-stage Optical Homogenization 有权
标题翻译：多级光学均匀化
公开(公告)号：US20100266268A1
公开(公告)日：2010-10-21
申请号：US12762351
申请日：2010-04-18
申请人： Dean C. Jennings , Timothy N. Thomas , Samuel C. Howells , Bruce E. Adams , Jiping Li
发明人： Dean C. Jennings , Timothy N. Thomas , Samuel C. Howells , Bruce E. Adams , Jiping Li
IPC分类号： H05B1/00 , G02B27/12 , G02F1/37
CPC分类号： H01L21/67115 , B23K26/0006 , B23K26/0622 , B23K26/0648 , B23K26/0652 , B23K26/12 , B23K26/125 , B23K26/127 , B23K26/352 , B23K26/354 , B23K2101/40 , B23K2103/56 , G02B27/0927 , G02B27/0961 , H01L21/02678 , H01L21/02686 , H01L21/268
摘要： Substrate processing equipment and methods are used to improve the uniformity of illumination across an illuminated portion of a substrate by processing light with multiple optical homogenizers. The multiple optical homogenizers each include micro-lens arrays and Fourier lens. The multiple optical homogenizers are arranged so that the output numerical aperture of one of the optical homogenizers is within 5% of the input numerical aperture of another optical homogenizer.
摘要翻译：基板处理设备和方法用于通过用多个光学均化器处理光线来改善衬底的照射部分上的照明的均匀性。多个光学均质器各自包括微透镜阵列和傅里叶透镜。多个光学均质器被布置成使得一个光学均质器的输出数值孔径在另一个光学均化器的输入数值孔径的5％内。

29. 发明授权

US08765618B2 Annealing apparatus using two wavelengths of continuous wave laser radiation 有权
公开(公告)号：US08765618B2
公开(公告)日：2014-07-01
申请号：US13485699
申请日：2012-05-31
申请人： Dean Jennings , Haifan Liang , Mark Yam , Vijay Parihar , Abhilash J. Mayur , Aaron Muir Hunter , Bruce E. Adams , Joseph M. Ranish
发明人： Dean Jennings , Haifan Liang , Mark Yam , Vijay Parihar , Abhilash J. Mayur , Aaron Muir Hunter , Bruce E. Adams , Joseph M. Ranish
IPC分类号： H01L21/268
CPC分类号： B23K26/0608 , B23K26/0604 , B23K26/0613 , B23K26/073 , B23K26/0732 , B23K26/0736 , B23K26/0738 , B23K26/352 , H01L21/02675 , H01L21/2026 , H01L21/268 , H01L21/324
摘要： A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

30. 发明授权

US09579750B2 Particle control in laser processing systems 有权
标题翻译：激光加工系统中的粒子控制
公开(公告)号：US09579750B2
公开(公告)日：2017-02-28
申请号：US13619749
申请日：2012-09-14
申请人： Aaron Muir Hunter , Mehran Behdjat , Bruce E. Adams
发明人： Aaron Muir Hunter , Mehran Behdjat , Bruce E. Adams
IPC分类号： B23K26/00 , B23K26/12 , A21B2/00 , B23K26/14
CPC分类号： B23K26/127 , B23K26/142 , B23K26/1464
摘要： The present invention generally relates to a laser processing systems for thermally processing substrates. The laser processing systems include a shield disposed between an energy source of the laser processing system and a substrate which is to be thermally processed. The shield includes an optically transparent window disposed adjacent to a cavity within the shield. The optically transparent window allows annealing energy to pass therethrough and to illuminate the substrate. The shield also includes one or more gas inlets and one or more gas outlets for introducing and removing a purge gas from the cavity within the shield. The purge gas is utilized to remove volatized or ablated components during thermal processing, and to provide a gas of predetermined composition, such as oxygen-free, to the thermally processed area.
摘要翻译：本发明一般涉及一种用于热处理衬底的激光加工系统。激光处理系统包括设置在激光加工系统的能量源和待热处理的基板之间的屏蔽。屏蔽件包括邻近屏蔽件内的空腔布置的光学透明窗口。光学透明窗口允许退火能量通过并照射基板。屏蔽还包括一个或多个气体入口和一个或多个气体出口，用于从罩内的空腔引入和去除净化气体。吹扫气体用于在热处理过程中除去挥发的或消融的组分，并且向热处理区域提供诸如无氧的预定组成的气体。

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