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    • 21. 发明授权
    • Thin film transistor fabricating method
    • 薄膜晶体管制造方法
    • US08603857B2
    • 2013-12-10
    • US13308548
    • 2011-12-01
    • Jian-Shihn Tsang
    • Jian-Shihn Tsang
    • H01L21/34
    • H01L29/7869
    • A thin film transistor fabricating method is disclosed. The thin film transistor fabricating method comprises providing a substrate; forming an oxide semiconductor layer on an upper surface of the substrate; forming a gate insulating layer on an upper surface of the oxide semiconductor layer; masking a portion of the oxide semiconductor layer with the gate insulating layer; irradiating the oxide semiconductor layer with irradiating light having photon energy less than a band gap of the oxide semiconductor layer; forming a drain region and a source region at lateral portions of the oxide semiconductor layer exposed to the irradiating light, and forming a channel region in the portion of the oxide semiconductor layer masked by the gate insulating layer; and forming a gate electrode on an upper surface of the gate insulating layer.
    • 公开了薄膜晶体管制造方法。 薄膜晶体管的制造方法包括提供基板; 在所述基板的上表面上形成氧化物半导体层; 在所述氧化物半导体层的上表面上形成栅极绝缘层; 用所述栅极绝缘层掩蔽所述氧化物半导体层的一部分; 用具有小于氧化物半导体层的带隙的光子能量的照射光照射氧化物半导体层; 在暴露于所述照射光的所述氧化物半导体层的横向部分处形成漏极区域和源极区域,并且在由所述栅极绝缘层掩蔽的所述氧化物半导体层的所述部分中形成沟道区域; 以及在所述栅极绝缘层的上表面上形成栅电极。
    • 22. 发明授权
    • Light emitting chip
    • 发光芯片
    • US08384112B2
    • 2013-02-26
    • US13283610
    • 2011-10-28
    • Jian-Shihn Tsang
    • Jian-Shihn Tsang
    • H01L33/00
    • H01L33/46H01L33/025H01L33/382H01L33/42H01L2933/0016
    • A light emitting chip includes a substrate, a reflective layer, a light emitting structure and a first electrode having a base formed between the reflective layer and the substrate. The light emitting structure includes a first semiconductor layer, an active layer and a second semiconductor layer. The first electrode further includes a connecting section extending upwardly from the base. An electrically insulating ion region is defined in the light emitting structure and extends from an upper surface of the base to the first semiconductor layer. A receiving groove is defined in the ion region and extends upwardly from the upper surface of the base to the first semiconductor layer. The connecting section is positioned in the receiving groove and electrically connects with the first semiconductor layer.
    • 发光芯片包括基板,反射层,发光结构以及在反射层和基板之间形成有基底的第一电极。 发光结构包括第一半导体层,有源层和第二半导体层。 第一电极还包括从基座向上延伸的连接部分。 在发光结构中限定电绝缘的离子区,并从基底的上表面延伸到第一半导体层。 接收槽限定在离子区域中,并从基底的上表面向上延伸到第一半导体层。 连接部位于接收槽内,与第一半导体层电连接。
    • 24. 发明授权
    • Light emitting diode module providing stable color temperature
    • 发光二极管模块提供稳定的色温
    • US08269231B2
    • 2012-09-18
    • US13074021
    • 2011-03-29
    • Jian-Shihn Tsang
    • Jian-Shihn Tsang
    • H01L29/00H01L33/00H01L21/66H01L21/00
    • H05B33/0857H05B33/0869
    • A light emitting diode module providing stable color temperature includes a plurality of light emitting diodes, at least one color sensor and a controller. The plurality of light emitting diodes can emit light with different wavelengths. The light emitting diode module providing stable color temperature includes a reflection region at the path of the light emitting from half peak angle of each light emitting diode. The color sensor detects the light having different wavelengths reflected from the reflection region. The controller adjusts driving currents of the light emitting diodes according to the luminous intensities of the light of the light emitting diodes reflected by the reflection region and detected by the color sensor.
    • 提供稳定色温的发光二极管模块包括多个发光二极管,至少一个颜色传感器和控制器。 多个发光二极管可发射不同波长的光。 提供稳定色温的发光二极管模块包括在每个发光二极管的半峰角发光的路径处的反射区域。 颜色传感器检测从反射区域反射的具有不同波长的光。 控制器根据由反射区域反射并由彩色传感器检测的发光二极管的光的发光强度来调节发光二极管的驱动电流。