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21. 发明申请

US20080057632A1 Method for Manufacturing Semiconductor Device 有权
标题翻译：半导体器件制造方法
公开(公告)号：US20080057632A1
公开(公告)日：2008-03-06
申请号：US11843745
申请日：2007-08-23
申请人： Yasuyuki Arai , Koichiro Tanaka , Yukie Suzuki
发明人： Yasuyuki Arai , Koichiro Tanaka , Yukie Suzuki
IPC分类号： H01L21/84
CPC分类号： H01L27/1288 , H01L27/1214
摘要： The present invention offers a method for forming an opening portion by a simple process without using a photomask or a resist. Further, the present invention proposes a method for manufacturing a semiconductor device at low cost. A plurality of light absorbing layers is formed over a substrate, an interlayer insulating layer is formed over the plurality of light absorbing layers, the plurality of light absorbing layers is irradiated with a linear or rectangular laser beam from the interlayer insulating layer side, and at least the interlayer insulating layer which is over the plurality of light absorbing layers is removed and an opening portion is formed; and accordingly, a plurality of opening portions can be formed by removing the plurality of light absorbing layers and an insulating film formed over the plurality of light absorbing layers.
摘要翻译：本发明提供一种通过简单的工艺形成开口部分的方法，而不使用光掩模或抗蚀剂。此外，本发明提供一种以低成本制造半导体器件的方法。在衬底上形成多个光吸收层，在多个光吸收层上形成层间绝缘层，多层光吸收层用来自层间绝缘层侧的直线或矩形激光束照射，并且在除去多个光吸收层之上的层间绝缘层的最小值，形成开口部; 因此，可以通过去除多个光吸收层和形成在多个光吸收层上的绝缘膜来形成多个开口部。

22. 发明申请

US20060231527A1 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20060231527A1
公开(公告)日：2006-10-19
申请号：US11452987
申请日：2006-06-15
申请人： Toru Takayama , Yasuyuki Arai , Yukie Suzuki
发明人： Toru Takayama , Yasuyuki Arai , Yukie Suzuki
IPC分类号： B44C1/22 , C03C25/68
CPC分类号： H01L27/1266 , H01L21/02672 , H01L21/2007 , H01L21/2022 , H01L21/76251 , H01L27/124 , H01L29/41733 , H01L2221/68363 , H01L2221/68368 , H01L2224/05001 , H01L2224/05008 , H01L2224/05024 , H01L2224/05572 , H01L2224/16225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/73265 , H01L2924/01021 , H01L2924/01055 , H01L2924/01068 , H01L2924/07811 , H01L2924/12044 , H01L2924/181 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A method of separating a lamination body with high yield without damaging the lamination body is provided. Further, a method of manufacturing a lightweight, flexible semiconductor device, which is thin in total is provided. The method of manufacturing the semiconductor device includes: a first step of laminating a metal layer, an oxide layer, a layer containing no hydrogen element, and a lamination body on a first substrate; a second step of forming a photocatalytic layer on a transparent substrate; and a third step of attaching the photocatalytic layer to the surface of the lamination body by using a first adhesive material after the first and second steps, separating the metal layer from the oxide layer, and irradiating light from a side of the transparent substrate so that an interface between the photocatalytic layer and the first adhesive material is separated to remove the first adhesive material.
摘要翻译：提供了一种以高产率分离层压体而不损坏层压体的方法。此外，提供了总体薄的制造轻量，柔性半导体器件的方法。半导体器件的制造方法包括：在第一基板上层叠金属层，氧化物层，不含氢元素的层和层叠体的第一工序; 在透明基板上形成光催化层的第二步骤; 以及第三步骤，通过在第一和第二步骤之后使用第一粘合剂材料将光催化层附着到层压体的表面，将金属层与氧化物层分离，并且从透明基板的侧面照射光，使得分离光催化层和第一粘合剂材料之间的界面以除去第一粘合剂材料。

23. 发明授权

US07084045B2 Method for manufacturing semiconductor device 失效
公开(公告)号：US07084045B2
公开(公告)日：2006-08-01
申请号：US11007308
申请日：2004-12-09
申请人： Toru Takayama , Yasuyuki Arai , Yukie Suzuki
发明人： Toru Takayama , Yasuyuki Arai , Yukie Suzuki
IPC分类号： H01L21/46 , H01L21/30
CPC分类号： H01L27/1266 , H01L21/02672 , H01L21/2007 , H01L21/2022 , H01L21/76251 , H01L27/124 , H01L29/41733 , H01L2221/68363 , H01L2221/68368 , H01L2224/05001 , H01L2224/05008 , H01L2224/05024 , H01L2224/05572 , H01L2224/16225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/73265 , H01L2924/01021 , H01L2924/01055 , H01L2924/01068 , H01L2924/07811 , H01L2924/12044 , H01L2924/181 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A method of separating a lamination body with high yield without damaging the lamination body is provided. Further, a method of manufacturing a lightweight, flexible semiconductor device, which is thin in total is provided. The method of manufacturing the semiconductor device includes: a first step of laminating a metal layer, an oxide layer, a layer containing no hydrogen element, and a lamination body on a first substrate; a second step of forming a photocatalytic layer on a transparent substrate; and a third step of attaching the photocatalytic layer to the surface of the lamination body by using a first adhesive material after the first and second steps, separating the metal layer from the oxide layer, and irradiating light from a side of the transparent substrate so that an interface between the photocatalytic layer and the first adhesive material is separated to remove the first adhesive material.

24. 发明授权

US08148259B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08148259B2
公开(公告)日：2012-04-03
申请号：US11843745
申请日：2007-08-23
申请人： Yasuyuki Arai , Koichiro Tanaka , Yukie Suzuki
发明人： Yasuyuki Arai , Koichiro Tanaka , Yukie Suzuki
IPC分类号： H01L21/4763
CPC分类号： H01L27/1288 , H01L27/1214
摘要： The present invention offers a method for forming an opening portion by a simple process without using a photomask or a resist. Further, the present invention proposes a method for manufacturing a semiconductor device at low cost. A plurality of light absorbing layers is formed over a substrate, an interlayer insulating layer is formed over the plurality of light absorbing layers, the plurality of light absorbing layers is irradiated with a linear or rectangular laser beam from the interlayer insulating layer side, and at least the interlayer insulating layer which is over the plurality of light absorbing layers is removed and an opening portion is formed; and accordingly, a plurality of opening portions can be formed by removing the plurality of light absorbing layers and an insulating film formed over the plurality of light absorbing layers.
摘要翻译：本发明提供一种通过简单的工艺形成开口部分的方法，而不使用光掩模或抗蚀剂。此外，本发明提供一种以低成本制造半导体器件的方法。在衬底上形成多个光吸收层，在多个光吸收层上形成层间绝缘层，多层光吸收层用来自层间绝缘层侧的直线或矩形激光束照射，并且在除去多个光吸收层之上的层间绝缘层的最小值，形成开口部; 因此，可以通过去除多个光吸收层和形成在多个光吸收层上的绝缘膜来形成多个开口部。

25. 发明授权

US07341924B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07341924B2
公开(公告)日：2008-03-11
申请号：US11452987
申请日：2006-06-15
申请人： Toru Takayama , Yasuyuki Arai , Yukie Suzuki
发明人： Toru Takayama , Yasuyuki Arai , Yukie Suzuki
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L27/1266 , H01L21/02672 , H01L21/2007 , H01L21/2022 , H01L21/76251 , H01L27/124 , H01L29/41733 , H01L2221/68363 , H01L2221/68368 , H01L2224/05001 , H01L2224/05008 , H01L2224/05024 , H01L2224/05572 , H01L2224/16225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/73265 , H01L2924/01021 , H01L2924/01055 , H01L2924/01068 , H01L2924/07811 , H01L2924/12044 , H01L2924/181 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A method of separating a lamination body with high yield without damaging the lamination body is provided. Further, a method of manufacturing a lightweight, flexible semiconductor device, which is thin in total is provided. The method of manufacturing the semiconductor device includes: a first step of laminating a metal layer, an oxide layer, a layer containing no hydrogen element, and a lamination body on a first substrate; a second step of forming a photocatalytic layer on a transparent substrate; and a third step of attaching the photocatalytic layer to the surface of the lamination body by using a first adhesive material after the first and second steps, separating the metal layer from the oxide layer, and irradiating light from a side of the transparent substrate so that an interface between the photocatalytic layer and the first adhesive material is separated to remove the first adhesive material.
摘要翻译：提供了一种以高产率分离层压体而不损坏层压体的方法。此外，提供了总体薄的制造轻量，柔性半导体器件的方法。半导体器件的制造方法包括：在第一基板上层叠金属层，氧化物层，不含氢元素的层和层叠体的第一工序; 在透明基板上形成光催化层的第二步骤; 以及第三步骤，通过在第一和第二步骤之后使用第一粘合剂材料将光催化层附着到层压体的表面，将金属层与氧化物层分离，并且从透明基板的侧面照射光，使得分离光催化层和第一粘合剂材料之间的界面以除去第一粘合剂材料。

26. 发明申请

US20050130391A1 Method for manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US20050130391A1
公开(公告)日：2005-06-16
申请号：US11007308
申请日：2004-12-09
申请人： Toru Takayama , Yasuyuki Arai , Yukie Suzuki
发明人： Toru Takayama , Yasuyuki Arai , Yukie Suzuki
IPC分类号： H01L21/20 , H01L21/762 , H01L21/77 , H01L21/84 , G03C1/805 , H01L21/30 , H01L21/46 , H01L21/26 , H01L21/324 , H01L21/42 , H01L21/477
CPC分类号： H01L27/1266 , H01L21/02672 , H01L21/2007 , H01L21/2022 , H01L21/76251 , H01L27/124 , H01L29/41733 , H01L2221/68363 , H01L2221/68368 , H01L2224/05001 , H01L2224/05008 , H01L2224/05024 , H01L2224/05572 , H01L2224/16225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/73265 , H01L2924/01021 , H01L2924/01055 , H01L2924/01068 , H01L2924/07811 , H01L2924/12044 , H01L2924/181 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A method of separating a lamination body with high yield without damaging the lamination body is provided. Further, a method of manufacturing a lightweight, flexible semiconductor device, which is thin in total is provided. The method of manufacturing the semiconductor device includes: a first step of laminating a metal layer, an oxide layer, a layer containing no hydrogen element, and a lamination body on a first substrate; a second step of forming a photocatalytic layer on a transparent substrate; and a third step of attaching the photocatalytic layer to the surface of the lamination body by using a first adhesive material after the first and second steps, separating the metal layer from the oxide layer, and irradiating light from a side of the transparent substrate so that an interface between the photocatalytic layer and the first adhesive material is separated to remove the first adhesive material.
摘要翻译：提供了一种以高产率分离层压体而不损坏层压体的方法。此外，提供了总体薄的制造轻量，柔性半导体器件的方法。半导体器件的制造方法包括：在第一基板上层叠金属层，氧化物层，不含氢元素的层和层叠体的第一工序; 在透明基板上形成光催化层的第二步骤; 以及第三步骤，通过在第一和第二步骤之后使用第一粘合剂材料将光催化层附着到层压体的表面，将金属层与氧化物层分离，并且从透明基板的侧面照射光，使得分离光催化层和第一粘合剂材料之间的界面以除去第一粘合剂材料。

27. 发明授权

US09030298B2 Thin semiconductor device and operation method of thin semiconductor device 有权
标题翻译：薄型半导体器件及薄型半导体器件的操作方法
公开(公告)号：US09030298B2
公开(公告)日：2015-05-12
申请号：US13424737
申请日：2012-03-20
申请人： Shunpei Yamazaki , Takeshi Osada , Yasuyuki Arai , Yuko Tachimura
发明人： Shunpei Yamazaki , Takeshi Osada , Yasuyuki Arai , Yuko Tachimura
IPC分类号： G06K9/00 , H01L23/66 , G06K19/07 , G06K7/00 , G06K19/077
CPC分类号： G06K19/072 , G06K7/0008 , G06K19/0723 , G06K19/07718 , G06K19/07749
摘要： The present invention provides a thin semiconductor device in which its security such as prevention of counterfeit or information leakage is to be enhanced. One feature of the present invention is a thin semiconductor device in which a plurality of thin film integrated circuits are mounted and in which at least one integrated circuit is different from the other integrated circuits in any one of a specification, layout, frequency for transmission or reception, a memory, a communication means, a communication rule and the like. According to the present invention, a thin semiconductor device tag having the plurality of thin film integrated circuits communicates with a reader/writer and at least one of the thin film integrated circuits receives a signal to write information in a memory, and the information written in the memory determines which of the thin film integrated circuits communicates.
摘要翻译：本发明提供一种薄型半导体器件，其中要防止伪造或信息泄漏的安全性得到提高。本发明的一个特征是薄型半导体器件，其中安装了多个薄膜集成电路，并且其中至少一个集成电路与其他集成电路不同，其中任何一个规格，布局，传输频率或接收，存储器，通信装置，通信规则等。根据本发明，具有多个薄膜集成电路的薄的半导体器件标签与读取器/写入器通信，并且至少一个薄膜集成电路接收将信息写入存储器的信号，并且写入的信息存储器确定薄膜集成电路中的哪一个通信。

28. 发明授权

US08633488B2 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08633488B2
公开(公告)日：2014-01-21
申请号：US13325129
申请日：2011-12-14
申请人： Shunpei Yamazaki , Yasuyuki Arai
发明人： Shunpei Yamazaki , Yasuyuki Arai
IPC分类号： H01L29/04 , G02F1/136
CPC分类号： H01L27/124 , G02F1/133553 , G02F1/134336 , G02F1/13439 , G02F1/136227 , G02F1/136286 , G02F1/1368 , G02F2001/133302 , G02F2001/136295 , G02F2201/123 , H01L21/02532 , H01L21/02592 , H01L21/0262 , H01L21/02631 , H01L21/02686 , H01L21/3003 , H01L27/1214 , H01L27/1218 , H01L27/1222 , H01L27/1251 , H01L27/1255 , H01L27/1285 , H01L27/3244 , H01L27/3246 , H01L27/3248 , H01L27/3258 , H01L27/326 , H01L27/3262 , H01L27/3265 , H01L27/3276 , H01L27/3279 , H01L29/66537 , H01L29/78621 , H01L29/78633 , H01L29/78678 , H01L29/78684 , H01L29/78696
摘要： An active matrix display device having a pixel structure in which pixel electrodes, gate wirings and source wirings are suitably arranged in the pixel portions to realize a high numerical aperture without increasing the number of masks or the number of steps. The device comprises a gate electrode and a source wiring on an insulating surface, a first insulating layer on the gate electrode and on the source wiring, a semiconductor layer on the first insulating film, a second insulating layer on the semiconductor film, a gate wiring connected to the gate electrode on the second insulating layer, a connection electrode for connecting the source wiring and the semiconductor layer together; and a pixel electrode connected to the semiconductor layer.
摘要翻译：具有像素结构的有源矩阵显示装置，其中像素电极，栅极布线和源极布线适当地布置在像素部分中，以实现高数值孔径，而不增加掩模的数量或台阶。该器件包括在绝缘表面上的栅电极和源极布线，栅电极和源极布线上的第一绝缘层，第一绝缘膜上的半导体层，半导体膜上的第二绝缘层，栅极布线连接到第二绝缘层上的栅电极，用于将源极配线和半导体层连接在一起的连接电极; 以及连接到半导体层的像素电极。

29. 发明授权

US08599469B2 Display device and method of fabricating the same 有权
公开(公告)号：US08599469B2
公开(公告)日：2013-12-03
申请号：US13153546
申请日：2011-06-06
申请人： Shunpei Yamazaki , Yasuyuki Arai
发明人： Shunpei Yamazaki , Yasuyuki Arai
IPC分类号： G02B26/00 , G09G3/34
CPC分类号： G02F1/167 , G02B26/026 , G02F1/133305 , G02F1/1368 , G02F2001/1672 , G02F2001/1676 , G02F2001/1678 , G02F2201/123 , G09F9/372 , G09G3/344 , H01L51/0097 , H01L51/0545
摘要： A constitution of the display device of the invention is shown in the following. The display device includes a pixel unit including TFTs of which the active layer contains an organic semiconductor material for forming channel portions in the opening portions in an insulating layer arranged to meet the gate electrodes. The pixel unit further includes a contrast media formed on the electrodes connected to the TFTs for changing the reflectivity upon the application of an electric field, or microcapsules containing electrically charged particles that change the reflectivity upon the application of an electric field. The pixel unit is sandwiched by plastic substrates, and barrier layers including an inorganic insulating material are provided between the plastic substrates and the pixel unit. The purpose of the present invention is to supply display devices which are excellent in productivity, light in weight and flexible.

30. 发明授权

US08547516B2 Display device and method of fabricating the same 失效
标题翻译：显示装置及其制造方法
公开(公告)号：US08547516B2
公开(公告)日：2013-10-01
申请号：US13224395
申请日：2011-09-02
申请人： Shunpei Yamazaki , Yasuhiko Takemura , Setsuo Nakajima , Yasuyuki Arai
发明人： Shunpei Yamazaki , Yasuhiko Takemura , Setsuo Nakajima , Yasuyuki Arai
IPC分类号： G02F1/1345
CPC分类号： G02F1/13452 , G02F1/1303 , G02F1/133305 , G02F1/1345 , G02F1/13454 , H01L21/67132 , H01L2221/68363 , H01L2224/16 , H01L2924/01079
摘要： A driver circuit for use with a passive matrix or active matrix electro-optical display device such as a liquid crystal display is fabricated to occupy a reduced area. A circuit (stick crystal) having a length substantially equal to the length of one side of the matrix of the display device is used as the driver circuit. The circuit is bonded to one substrate of the display device, and then the terminals of the circuit are connected with the terminals of the display device. Subsequently, the substrate of the driver circuit is removed. The driver circuit can be formed on a large-area substrate such as a glass substrate, while the display device can be formed on a lightweight material having a high shock resistance such as a plastic substrate.
摘要翻译：制造用于诸如液晶显示器的无源矩阵或有源矩阵电光显示装置的驱动电路以占据减小的面积。使用具有与显示装置的矩阵的一侧的长度大致相等的长度的电路（棒状晶体）作为驱动电路。电路接合到显示装置的一个基板，然后电路的端子与显示装置的端子连接。随后，驱动电路的基板被去除。驱动电路可以形成在诸如玻璃基板的大面积基板上，而显示装置可以形成在具有高抗震性的轻质材料如塑料基板上。

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