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21. 发明申请

US20130001583A1 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF 有权
公开(公告)号：US20130001583A1
公开(公告)日：2013-01-03
申请号：US13609906
申请日：2012-09-11
申请人： Shunpei YAMAZAKI , Satoshi MURAKAMI , Jun KOYAMA , Yukio TANAKA , Hidehito KITAKADO , Hideto OHNUMA
发明人： Shunpei YAMAZAKI , Satoshi MURAKAMI , Jun KOYAMA , Yukio TANAKA , Hidehito KITAKADO , Hideto OHNUMA
IPC分类号： H01L29/786
CPC分类号： G02F1/1368 , G02F1/133345 , G02F1/13454 , G02F1/136227 , G02F1/136286 , G02F2201/123 , G02F2202/104 , H01L27/12 , H01L27/1222 , H01L27/124 , H01L27/1248 , H01L27/1259 , H01L27/3248 , H01L27/3258 , H01L27/3262 , H01L27/3272 , H01L27/3276 , H01L29/458 , H01L29/78621 , H01L29/78627 , H01L29/78675 , H01L2029/7863 , H01L2227/323
摘要： This invention provides a semiconductor device having high operation performance and high reliability. An LDD region 707 overlapping with a gate wiring is arranged in an n-channel TFT 802 forming a driving circuit, and a TFT structure highly resistant to hot carrier injection is achieved. LDD regions 717, 718, 719 and 720 not overlapping with a gate wiring are arranged in an n-channel TFT 804 forming a pixel unit. As a result, a TFT structure having a small OFF current value is achieved. In this instance, an element belonging to the Group 15 of the Periodic Table exists in a higher concentration in the LDD region 707 than in the LDD regions 717, 718, 719 and 720.

22. 发明申请

US20130001568A1 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20130001568A1
公开(公告)日：2013-01-03
申请号：US13609915
申请日：2012-09-11
申请人： Shunpei YAMAZAKI , Satoshi MURAKAMI , Jun KOYAMA , Yukio TANAKA , Hidehito KITAKADO , Hideto OHNUMA
发明人： Shunpei YAMAZAKI , Satoshi MURAKAMI , Jun KOYAMA , Yukio TANAKA , Hidehito KITAKADO , Hideto OHNUMA
IPC分类号： H01L29/786
CPC分类号： G02F1/1368 , G02F1/133345 , G02F1/13454 , G02F1/136227 , G02F1/136286 , G02F2201/123 , G02F2202/104 , H01L27/12 , H01L27/1222 , H01L27/124 , H01L27/1248 , H01L27/1259 , H01L27/3248 , H01L27/3258 , H01L27/3262 , H01L27/3272 , H01L27/3276 , H01L29/458 , H01L29/78621 , H01L29/78627 , H01L29/78675 , H01L2029/7863 , H01L2227/323
摘要： This invention provides a semiconductor device having high operation performance and high reliability. An LDD region 707 overlapping with a gate wiring is arranged in an n-channel TFT 802 forming a driving circuit, and a TFT structure highly resistant to hot carrier injection is achieved. LDD regions 717, 718, 719 and 720 not overlapping with a gate wiring are arranged in an n-channel TFT 804 forming a pixel unit. As a result, a TFT structure having a small OFF current value is achieved. In this instance, an element belonging to the Group 15 of the Periodic Table exists in a higher concentration in the LDD region 707 than in the LDD regions 717, 718, 719 and 720.
摘要翻译：本发明提供一种具有高操作性能和高可靠性的半导体器件。在形成驱动电路的n沟道TFT 802中配置与栅极配线重叠的LDD区域707，能够实现高耐热载流子注入的TFT结构。不与栅极布线重叠的LDD区域717,718,719和720被布置在形成像素单元的n沟道TFT 804中。结果，实现了具有小的截止电流值的TFT结构。在这种情况下，属于周期表第15族的元素在LDD区707中比在LDD区717,718,719和720中的浓度更高。

23. 发明申请

US20120319183A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120319183A1
公开(公告)日：2012-12-20
申请号：US13495313
申请日：2012-06-13
申请人： Shunpei YAMAZAKI , Tatsuya HONDA
发明人： Shunpei YAMAZAKI , Tatsuya HONDA
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7869 , H01L29/045 , H01L29/24 , H01L29/267 , H01L29/7782 , H01L29/78609 , H01L29/78696
摘要： One object of the present invention is to provide a structure of a transistor including an oxide semiconductor in a channel formation region in which the threshold voltage of electric characteristics of the transistor can be positive, which is a so-called normally-off switching element, and a manufacturing method thereof. A second oxide semiconductor layer which has greater electron affinity and a smaller energy gap than a first oxide semiconductor layer is formed over the first oxide semiconductor layer. Further, a third oxide semiconductor layer is formed to cover side surfaces and a top surface of the second oxide semiconductor layer, that is, the third oxide semiconductor layer covers the second oxide semiconductor layer.
摘要翻译：本发明的一个目的是提供在晶体管的电特性的阈值电压可以为正的沟道形成区域中的包括氧化物半导体的晶体管的结构，其是所谓的常关断开关元件，及其制造方法。在第一氧化物半导体层上形成具有比第一氧化物半导体层更大的电子亲和力和更小的能隙的第二氧化物半导体层。此外，形成第三氧化物半导体层以覆盖第二氧化物半导体层的侧表面和顶表面，即，第三氧化物半导体层覆盖第二氧化物半导体层。

24. 发明申请

US20120319113A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120319113A1
公开(公告)日：2012-12-20
申请号：US13484740
申请日：2012-05-31
申请人： Shunpei YAMAZAKI
发明人： Shunpei YAMAZAKI
IPC分类号： H01L29/786 , H01L21/44
CPC分类号： H01L29/78618 , H01L29/66969 , H01L29/7869 , H01L29/78696
摘要： At least part of the oxide semiconductor layer which serves as the channel formation region is thinned by etching and the thickness of the channel formation region is adjusted by the etching. Further, a dopant containing phosphorus (P) or boron (B) is introduced into a thick region of the oxide semiconductor layer to form a source region and a drain region in the oxide semiconductor layer, so that the contact resistance between the source and drain regions and the channel formation region which are connected to each other is reduced.
摘要翻译：作为沟道形成区域的氧化物半导体层的至少一部分通过蚀刻变薄，通过蚀刻来调整沟道形成区域的厚度。此外，将含磷（P）或硼（B）的掺杂剂引入到氧化物半导体层的厚区域中，以在氧化物半导体层中形成源极区域和漏极区域，使得源极和漏极彼此连接的区域和沟道形成区域减少。

25. 发明申请

US20120319102A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120319102A1
公开(公告)日：2012-12-20
申请号：US13488879
申请日：2012-06-05
申请人： Shunpei YAMAZAKI , Tatsuya HONDA
发明人： Shunpei YAMAZAKI , Tatsuya HONDA
IPC分类号： H01L29/786 , H01L21/34
CPC分类号： H01L29/78609 , H01L21/02554 , H01L21/02565 , H01L27/1225 , H01L27/14616 , H01L29/045 , H01L29/66969 , H01L29/78621 , H01L29/7869 , H01L29/78696
摘要： An object is to provide a structure of a transistor which has a channel formation region formed using an oxide semiconductor and a positive threshold voltage value, which enables a so-called normally-on switching element. The transistor includes an oxide semiconductor stack in which at least a first oxide semiconductor layer and a second oxide semiconductor layer with different energy gaps are stacked and a region containing oxygen in excess of its stoichiometric composition ratio is provided.
摘要翻译：本发明的目的是提供一种晶体管的结构，其具有使用氧化物半导体形成的沟道形成区域和正的阈值电压值，这使得能够形成所谓的常开开关元件。晶体管包括氧化物半导体堆叠，其中至少第一氧化物半导体层和具有不同能隙的第二氧化物半导体层被堆叠，并且提供含有超过其化学计量组成比的氧的区域。

26. 发明申请

US20120305912A1 DISPLAY DEVICE AND ELECTRONIC DEVICE INCLUDING THE SAME 有权
标题翻译：显示装置和包括其的电子装置
公开(公告)号：US20120305912A1
公开(公告)日：2012-12-06
申请号：US13570297
申请日：2012-08-09
申请人： Jun KOYAMA , Shunpei YAMAZAKI
发明人： Jun KOYAMA , Shunpei YAMAZAKI
IPC分类号： H01L29/12
CPC分类号： H01L27/1225 , G02F1/133345 , G02F1/134309 , G02F1/13452 , G02F1/13454 , G02F1/136286 , G02F1/1368 , G02F2201/123 , G09G3/3266 , G09G3/3275 , G09G3/3677 , G09G3/3688 , G09G2300/0426 , G09G2310/0286 , G09G2310/08 , G09G2330/023 , H01L27/124 , H01L27/1285 , H01L29/045 , H01L29/66742 , H01L29/66969 , H01L29/7869
摘要： One embodiment of the present invention provides a highly reliably display device in which a high mobility is achieved in an oxide semiconductor. A first oxide component is formed over a base component. Crystal growth proceeds from a surface toward an inside of the first oxide component by a first heat treatment, so that a first oxide crystal component is formed in contact with at least part of the base component. A second oxide component is formed over the first oxide crystal component. Crystal growth is performed by a second heat treatment using the first oxide crystal component as a seed, so that a second oxide crystal component is formed. Thus, a stacked oxide material is formed. A transistor with a high mobility is formed using the stacked oxide material and a driver circuit is formed using the transistor.
摘要翻译：本发明的一个实施例提供了一种在氧化物半导体中实现高迁移率的高度可靠的显示装置。第一氧化物组分形成在基底组分上。晶体生长通过第一次热处理从第一氧化物组分的表面向内部进行，从而形成第一氧化物晶体组分与至少一部分基础组分接触。在第一氧化物晶体组分上形成第二氧化物组分。通过使用第一氧化物晶体成分作为种子的第二次热处理进行晶体生长，从而形成第二氧化物晶体成分。因此，形成堆叠的氧化物材料。使用层叠的氧化物材料形成具有高迁移率的晶体管，并且使用该晶体管形成驱动电路。

27. 发明申请

US20120299001A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120299001A1
公开(公告)日：2012-11-29
申请号：US13488926
申请日：2012-06-05
申请人： Shunpei YAMAZAKI , Hideaki KUWABARA , Yasuyuki ARAI
发明人： Shunpei YAMAZAKI , Hideaki KUWABARA , Yasuyuki ARAI
IPC分类号： H01L29/786
CPC分类号： H01L27/1222 , G02F1/133345 , G02F1/1339 , G02F1/134309 , G02F1/13439 , G02F1/13452 , G02F1/13458 , G02F1/136204 , G02F1/136227 , G02F1/136286 , G02F1/1368 , G02F2001/136231 , G02F2001/136295 , G02F2201/123 , G02F2202/103 , G02F2202/105 , G02F2202/28 , H01L21/67161 , H01L21/67167 , H01L21/67207 , H01L21/67225 , H01L21/67236 , H01L27/1218 , H01L27/124 , H01L27/1244 , H01L27/1255 , H01L27/1288 , H01L29/66765 , H01L29/78669
摘要： [Problem]A TFT is manufactured using at least five photomasks in a conventional liquid crystal display device, and therefore the manufacturing cost is high.[Solving Means]By performing the formation of the pixel electrode 127, the source region 123 and the drain region 124 by using three photomasks in three photolithography steps, a liquid crystal display device prepared with a pixel TFT portion, having a reverse stagger type n-channel TFT, and a storage capacitor can be realized,
摘要翻译： [问题]在传统的液晶显示装置中，使用至少五个光掩模制造TFT，因此制造成本高。 [解决方案]通过在三个光刻步骤中使用三个光掩模来执行像素电极127，源极区域123和漏极区域124的形成，制备具有反向交错型n型的像素TFT部分的液晶显示装置通道TFT和存储电容器，

28. 发明申请

US20120273779A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120273779A1
公开(公告)日：2012-11-01
申请号：US13546345
申请日：2012-07-11
申请人： Shunpei YAMAZAKI , Hidekazu MIYAIRI , Kengo AKIMOTO , Kojiro SHIRAISHI
发明人： Shunpei YAMAZAKI , Hidekazu MIYAIRI , Kengo AKIMOTO , Kojiro SHIRAISHI
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/016 , H01L27/1218 , H01L27/1225 , H01L27/124 , H01L27/1248 , H01L27/1255 , H01L27/15 , H01L27/3225 , H01L27/3241 , H01L27/3248 , H01L27/3258 , H01L29/45 , H01L29/4908 , H01L29/513 , H01L29/518 , H01L29/66742 , H01L29/786 , H01L29/78618
摘要： In an active matrix display device, electric characteristics of thin film transistors included in a circuit are important, and performance of the display device depends on the electric characteristics. Thus, by using an oxide semiconductor film including In, Ga, and Zn for an inverted staggered thin film transistor, variation in electric characteristics of the thin film transistor can be reduced. Three layers of a gate insulating film, an oxide semiconductor layer and a channel protective layer are successively formed by a sputtering method without being exposed to air. Further, in the oxide semiconductor layer, the thickness of a region overlapping with the channel protective film is larger than that of a region in contact with a conductive film.
摘要翻译：在有源矩阵显示装置中，包括在电路中的薄膜晶体管的电特性是重要的，显示装置的性能取决于电特性。因此，通过使用包括In，Ga和Zn的氧化物半导体膜用于反向交错薄膜晶体管，可以减小薄膜晶体管的电特性的变化。通过溅射法连续地形成三层栅极绝缘膜，氧化物半导体层和沟道保护层，而不暴露于空气。此外，在氧化物半导体层中，与沟道保护膜重叠的区域的厚度大于与导电膜接触的区域的厚度。

29. 发明申请

US20120256178A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120256178A1
公开(公告)日：2012-10-11
申请号：US13426641
申请日：2012-03-22
申请人： Shunpei YAMAZAKI
发明人： Shunpei YAMAZAKI
IPC分类号： H01L29/78 , H01L21/36 , H01L29/24 , H01L29/22
CPC分类号： H01L29/7869 , H01L29/78603
摘要： A transistor including an oxide semiconductor with favorable electric characteristics and a manufacturing method thereof are provided. A semiconductor device includes a transistor. The transistor includes an oxide semiconductor film over a base insulating film, a gate electrode overlapping with the oxide semiconductor film with a gate insulating film interposed therebetween, and a pair of electrodes in contact with the oxide semiconductor film and serving as a source electrode and a drain electrode. The base insulating film includes a first oxide insulating film partly in contact with the oxide semiconductor film and a second oxide insulating film in the periphery of the first oxide insulating film. An end portion of the oxide semiconductor film which crosses the channel width direction of the transistor is located over the second oxide insulating film.
摘要翻译：提供一种包括具有良好电特性的氧化物半导体的晶体管及其制造方法。半导体器件包括晶体管。晶体管包括在基底绝缘膜上的氧化物半导体膜，与氧化物半导体膜重叠的栅电极，其间插入有栅极绝缘膜，以及与氧化物半导体膜接触并用作源电极的一对电极和漏电极。基底绝缘膜包括与氧化物半导体膜部分接触的第一氧化物绝缘膜和在第一氧化物绝缘膜的周围的第二氧化物绝缘膜。氧化物半导体膜的与晶体管的沟道宽度方向交叉的端部位于第二氧化物绝缘膜的上方。

30. 发明申请

US20120256177A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120256177A1
公开(公告)日：2012-10-11
申请号：US13426640
申请日：2012-03-22
申请人： Shunpei YAMAZAKI
发明人： Shunpei YAMAZAKI
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7869 , H01L21/76283 , H01L21/84 , H01L27/1203 , H01L29/66772
摘要： A transistor including an oxide semiconductor with favorable electric characteristics and a manufacturing method thereof are provided. A semiconductor device includes a transistor. The transistor includes an oxide semiconductor film over a base insulating film, a gate electrode overlapping with the oxide semiconductor film with a gate insulating film interposed therebetween, and a pair of electrodes in contact with the oxide semiconductor film and serving as a source electrode and a drain electrode. The base insulating film includes a first oxide insulating film partly in contact with the oxide semiconductor film and a second oxide insulating film in the periphery of the first oxide insulating film. An end portion of the oxide semiconductor film which crosses the channel width direction of the transistor is located over the first oxide insulating film.
摘要翻译：提供一种包括具有良好电特性的氧化物半导体的晶体管及其制造方法。半导体器件包括晶体管。晶体管包括在基底绝缘膜上的氧化物半导体膜，与氧化物半导体膜重叠的栅电极，其间插入有栅极绝缘膜，以及与氧化物半导体膜接触并用作源电极的一对电极和漏电极。基底绝缘膜包括与氧化物半导体膜部分接触的第一氧化物绝缘膜和在第一氧化物绝缘膜的周围的第二氧化物绝缘膜。氧化物半导体膜的与晶体管的沟道宽度方向交叉的端部位于第一氧化物绝缘膜的上方。

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