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21. 发明申请

US20070215881A1 LIGHT-EMITTING ELEMENT AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：发光元件及其制造方法
公开(公告)号：US20070215881A1
公开(公告)日：2007-09-20
申请号：US11680354
申请日：2007-02-28
申请人： Yoshiaki YAMAMOTO , Yoshiharu HIRAKATA , Junichiro SAKATA , Hiroki OHARA
发明人： Yoshiaki YAMAMOTO , Yoshiharu HIRAKATA , Junichiro SAKATA , Hiroki OHARA
IPC分类号： H01L33/00
CPC分类号： H01L27/156 , H01L33/30 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： It is an object of the present invention to provide a new light-emitting element and manufacturing method thereof in which actively diffusing a material into a film formation layer is utilized where an interface state and interdiffusion between a compound semiconductor substrate and a film formation layer formed thereover are not considered to be problematic. According to one feature of the present invention, unevenness is formed over the surface of a compound semiconductor substrate through chemical treatment, a compound semiconductor layer is formed over the surface of the compound semiconductor substrate having unevenness, atoms of the compound semiconductor substrate are diffused into the compound semiconductor layer through heat treatment, a first conductive layer is formed over the compound semiconductor substrate, and a second conductive layer is formed over the compound semiconductor layer.
摘要翻译：本发明的一个目的是提供一种新的发光元件及其制造方法，其中在形成层间的化合物半导体衬底和成膜层之间的界面状态和相互扩散之间，使材料活性地扩散到成膜层中这不是有问题的。根据本发明的一个特征，通过化学处理在化合物半导体衬底的表面上形成凹凸，在具有凹凸的化合物半导体衬底的表面上形成化合物半导体层，化合物半导体衬底的原子扩散到通过热处理的化合物半导体层，在化合物半导体衬底上形成第一导电层，并且在化合物半导体层上形成第二导电层。

22. 发明申请

US20120300151A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：US20120300151A1
公开(公告)日：2012-11-29
申请号：US13567327
申请日：2012-08-06
申请人： Shunpei YAMAZAKI , Junichiro SAKATA , Hiroyuki MIYAKE , Hideaki KUWABARA , Tatsuya TAKAHASHI
发明人： Shunpei YAMAZAKI , Junichiro SAKATA , Hiroyuki MIYAKE , Hideaki KUWABARA , Tatsuya TAKAHASHI
IPC分类号： H01L27/15 , G02F1/136
CPC分类号： H01L27/1225 , G02F1/1368 , H01L21/02554 , H01L21/02565 , H01L27/124 , H01L27/1251 , H01L27/1255 , H01L29/45 , H01L29/78645
摘要： An aperture ratio of a semiconductor device is improved. A driver circuit and a pixel are provided over one substrate, and a first thin film transistor in the driver circuit and a second thin film transistor in the pixel each include a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide semiconductor layer over the gate insulating layer, source and drain electrode layers over the oxide semiconductor layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer, and the source and drain electrode layers. The gate electrode layer, the gate insulating layer, the oxide semiconductor layer, the source and drain electrode layers, and the oxide insulating layer of the second thin film transistor each have a light-transmitting property.
摘要翻译：半导体器件的开口率提高。驱动电路和像素设置在一个基板上，驱动电路中的第一薄膜晶体管和像素中的第二薄膜晶体管均包括栅极电极层，栅电极层上的栅极绝缘层，氧化物栅极绝缘层上的半导体层，氧化物半导体层上的源极和漏极层以及与栅极绝缘层，氧化物半导体层以及源极和漏极上的部分氧化物半导体层接触的氧化物绝缘层层。栅极电极层，栅极绝缘层，氧化物半导体层，源极和漏极电极层以及第二薄膜晶体管的氧化物绝缘层各自具有透光性。

23. 发明申请

US20120256179A1 TRANSISTOR AND DISPLAY DEVICE 审中-公开
标题翻译：晶体管和显示器件
公开(公告)号：US20120256179A1
公开(公告)日：2012-10-11
申请号：US13528009
申请日：2012-06-20
申请人： Shunpei YAMAZAKI , Masayuki SAKAKURA , Ryosuke WATANABE , Junichiro SAKATA , Kengo AKIMOTO , Akiharu MIYANAGA , Takuya HIROHASHI , Hideyuki KISHIDA
发明人： Shunpei YAMAZAKI , Masayuki SAKAKURA , Ryosuke WATANABE , Junichiro SAKATA , Kengo AKIMOTO , Akiharu MIYANAGA , Takuya HIROHASHI , Hideyuki KISHIDA
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/04 , H01L29/045 , H01L29/78618 , H01L29/78693 , H01L29/78696
摘要： To provide a transistor having a favorable electric characteristics and high reliability and a display device including the transistor. The transistor is a bottom-gate transistor formed using an oxide semiconductor for a channel region. An oxide semiconductor layer subjected to dehydration or dehydrogenation through heat treatment is used as an active layer. The active layer includes a first region of a superficial portion microcrystallized and a second region of the rest portion. By using the oxide semiconductor layer having such a structure, a change to an n-type, which is attributed to entry of moisture to the superficial portion or elimination of oxygen from the superficial portion, and generation of a parasitic channel can be suppressed. In addition, contact resistance between the oxide semiconductor layer and source and drain electrodes can be reduced.
摘要翻译：提供具有良好的电特性和高可靠性的晶体管以及包括该晶体管的显示装置。晶体管是使用用于沟道区的氧化物半导体形成的底栅晶体管。使用通过热处理进行脱水或脱氢的氧化物半导体层作为活性层。有源层包括微结晶的浅表部分的第一区域和其余部分的第二区域。通过使用具有这种结构的氧化物半导体层，可以抑制归因于表层部分的水分进入或从表面部分的氧的消除导致的n型变化，以及寄生通道的产生。此外，可以减小氧化物半导体层与源极和漏极之间的接触电阻。

24. 发明申请

US20110215318A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
公开(公告)号：US20110215318A1
公开(公告)日：2011-09-08
申请号：US13104540
申请日：2011-05-10
申请人： Shunpei YAMAZAKI , Junichiro SAKATA , Jun KOYAMA
发明人： Shunpei YAMAZAKI , Junichiro SAKATA , Jun KOYAMA
IPC分类号： H01L33/08 , H01L29/786
CPC分类号： H01L29/7869 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/1225 , H01L27/124 , H01L29/24 , H01L29/66969 , H01L29/78696
摘要： A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are formed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit.

25. 发明申请

US20110210355A1 LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20110210355A1
公开(公告)日：2011-09-01
申请号：US12871176
申请日：2010-08-30
申请人： Shunpei YAMAZAKI , Junichiro SAKATA , Masayuki SAKAKURA , Yoshiaki OIKAWA , Kenichi OKAZAKI , Hotaka MARUYAMA
发明人： Shunpei YAMAZAKI , Junichiro SAKATA , Masayuki SAKAKURA , Yoshiaki OIKAWA , Kenichi OKAZAKI , Hotaka MARUYAMA
IPC分类号： H01L33/36 , H01L33/00
CPC分类号： H01L29/78696 , H01L27/1225 , H01L27/124 , H01L27/127 , H01L27/322 , H01L27/3244 , H01L27/3262 , H01L29/247 , H01L29/78618 , H01L29/78648 , H01L29/7869 , H01L29/78693 , H01L51/52 , H01L2227/323
摘要： An object is to improve reliability of a light-emitting device. A light-emitting device has a driver circuit portion including a transistor for a driver circuit and a pixel portion including a transistor for a pixel over one substrate. The transistor for the driver circuit and the transistor for the pixel are inverted staggered transistors each including an oxide semiconductor layer in contact with part of an oxide insulating layer. In the pixel portion, a color filter layer and a light-emitting element are provided over the oxide insulating layer. In the transistor for the driver circuit, a conductive layer overlapping with a gate electrode layer and the oxide semiconductor layer is provided over the oxide insulating layer. The gate electrode layer, a source electrode layer, and a drain electrode layer are formed using metal conductive films.
摘要翻译：目的在于提高发光装置的可靠性。发光装置具有包括用于驱动电路的晶体管和包括用于一个衬底上的像素的晶体管的像素部分的驱动器电路部分。用于驱动电路的晶体管和用于像素的晶体管是反向交错晶体管，每个晶体管包括与氧化物绝缘层的一部分接触的氧化物半导体层。在像素部分中，在氧化物绝缘层上设置滤色器层和发光元件。在用于驱动电路的晶体管中，在氧化物绝缘层上设置与栅电极层和氧化物半导体层重叠的导电层。使用金属导电膜形成栅极电极层，源极电极层和漏极电极层。

26. 发明申请

US20110121289A1 THIN FILM TRANSISTOR 有权
标题翻译：薄膜晶体管
公开(公告)号：US20110121289A1
公开(公告)日：2011-05-26
申请号：US12950186
申请日：2010-11-19
申请人： Akiharu MIYANAGA , Junichiro SAKATA , Masayuki SAKAKURA , Masahiro TAKAHASHI , Hideyuki KISHIDA , Shunpei YAMAZAKI
发明人： Akiharu MIYANAGA , Junichiro SAKATA , Masayuki SAKAKURA , Masahiro TAKAHASHI , Hideyuki KISHIDA , Shunpei YAMAZAKI
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L29/10 , H01L29/41733
摘要： A thin film transistor including an oxide semiconductor with favorable electrical characteristics is provided. The thin film transistor includes a gate electrode provided over a substrate, a gate insulating film provided over the gate electrode, an oxide semiconductor film provided over the gate electrode and on the gate insulating film, a metal oxide film provided on the oxide semiconductor film, and a metal film provided on the metal oxide film. The oxide semiconductor film is in contact with the metal oxide film, and includes a region whose concentration of metal is higher than that of any other region in the oxide semiconductor film (a high metal concentration region). In the high metal concentration region, the metal contained in the oxide semiconductor film may be present as a crystal grain or a microcrystal.
摘要翻译：提供了包括具有良好电特性的氧化物半导体的薄膜晶体管。薄膜晶体管包括设置在基板上的栅极电极，设置在栅极上的栅极绝缘膜，设置在栅电极和栅极绝缘膜上的氧化物半导体膜，设置在氧化物半导体膜上的金属氧化物膜，以及设置在金属氧化物膜上的金属膜。氧化物半导体膜与金属氧化物膜接触，并且包括金属的浓度高于氧化物半导体膜中的任何其它区域（高金属浓度区域）的区域。在高金属浓度区域中，包含在氧化物半导体膜中的金属可以作为晶粒或微晶存在。

27. 发明申请

US20110079778A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110079778A1
公开(公告)日：2011-04-07
申请号：US12894791
申请日：2010-09-30
申请人： Shunpei YAMAZAKI , Akiharu MIYANAGA , Masahiro TAKAHASHI , Hideyuki KISHIDA , Junichiro SAKATA
发明人： Shunpei YAMAZAKI , Akiharu MIYANAGA , Masahiro TAKAHASHI , Hideyuki KISHIDA , Junichiro SAKATA
IPC分类号： H01L29/12 , H01L21/34
CPC分类号： H01L21/02554 , G02F1/1368 , G02F1/167 , H01L21/02164 , H01L21/02172 , H01L21/02266 , H01L21/02422 , H01L21/02565 , H01L21/02631 , H01L21/477 , H01L27/1225 , H01L27/127 , H01L27/3262 , H01L29/24 , H01L29/66969 , H01L29/7869 , H01L29/78696
摘要： An object is to provide a semiconductor device with stable electric characteristics in which an oxide semiconductor is used. The impurity concentration in the oxide semiconductor layer is reduced in the following manner: a silicon oxide layer including many defects typified by dangling bonds is formed in contact with the oxide semiconductor layer, and an impurity such as hydrogen or moisture (a hydrogen atom or a compound including a hydrogen atom such as H2O) included in the oxide semiconductor layer is diffused into the silicon oxide layer. Further, a mixed region is provided between the oxide semiconductor layer and the silicon oxide layer. The mixed region includes oxygen, silicon, and at least one kind of metal element that is included in the oxide semiconductor.
摘要翻译：本发明的目的是提供一种其中使用氧化物半导体的稳定电特性的半导体器件。氧化物半导体层中的杂质浓度以如下方式降低：以与氧化物半导体层接触的方式形成包括以悬挂键为代表的许多缺陷的氧化硅层，以及诸如氢或水分的杂质（氢原子或包含在氧化物半导体层中的包括氢原子的化合物如H 2 O的化合物）扩散到氧化硅层中。此外，在氧化物半导体层和氧化硅层之间设置混合区域。混合区域包括氧，硅以及包含在氧化物半导体中的至少一种金属元素。

28. 发明申请

US20110070693A1 METHOD FOR MANUFACTURING OXIDE SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造氧化物半导体膜的方法和制造半导体器件的方法
公开(公告)号：US20110070693A1
公开(公告)日：2011-03-24
申请号：US12888846
申请日：2010-09-23
申请人： Shunpei YAMAZAKI , Junichiro SAKATA , Akiharu MIYANAGA , Masayuki SAKAKURA , Junichi KOEZUKA , Tetsunori MARUYAMA , Yuki IMOTO
发明人： Shunpei YAMAZAKI , Junichiro SAKATA , Akiharu MIYANAGA , Masayuki SAKAKURA , Junichi KOEZUKA , Tetsunori MARUYAMA , Yuki IMOTO
IPC分类号： H01L21/34 , C23C14/34
CPC分类号： H01L29/66742 , C23C14/086 , H01L21/02422 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L29/7869
摘要： An object is to provide an oxide semiconductor having stable electric characteristics and a semiconductor device including the oxide semiconductor. A manufacturing method of a semiconductor film by a sputtering method includes the steps of holding a substrate in a treatment chamber which is kept in a reduced-pressure state; heating the substrate at lower than 400° C.; introducing a sputtering gas from which hydrogen and moisture are removed in the state where remaining moisture in the treatment chamber is removed; and forming an oxide semiconductor film over the substrate with use of a metal oxide which is provided in the treatment chamber as a target. When the oxide semiconductor film is formed, remaining moisture in a reaction atmosphere is removed; thus, the concentration of hydrogen and the concentration of hydride in the oxide semiconductor film can be reduced. Thus, the oxide semiconductor film can be stabilized.
摘要翻译：目的是提供具有稳定电特性的氧化物半导体和包括氧化物半导体的半导体器件。通过溅射法制造半导体膜的方法包括将基板保持在保持在减压状态的处理室中的步骤; 在低于400℃下加热基材。在去除处理室中的剩余水分的状态下引入除去氢气和水分的溅射气体; 以及使用设置在处理室中的金属氧化物作为目标，在基板上形成氧化物半导体膜。当形成氧化物半导体膜时，除去反应气氛中的剩余水分; 因此，可以降低氧化物半导体膜中的氢浓度和氢化物浓度。因此，可以使氧化物半导体膜稳定。

29. 发明申请

US20110068336A1 SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体元件及其制造方法
公开(公告)号：US20110068336A1
公开(公告)日：2011-03-24
申请号：US12888835
申请日：2010-09-23
申请人： Shunpei YAMAZAKI , Junichiro SAKATA , Akiharu MIYANAGA , Masayuki SAKAKURA , Junichi KOEZUKA , Tetsunori MARUYAMA , Yuki IMOTO
发明人： Shunpei YAMAZAKI , Junichiro SAKATA , Akiharu MIYANAGA , Masayuki SAKAKURA , Junichi KOEZUKA , Tetsunori MARUYAMA , Yuki IMOTO
IPC分类号： H01L29/26 , H01L21/336
CPC分类号： H01L29/66969 , H01L21/02565 , H01L27/1225 , H01L29/7869
摘要： An object is to provide a thin film transistor and a method for manufacturing the thin film transistor including an oxide semiconductor with a controlled threshold voltage, high operation speed, a relatively easy manufacturing process, and sufficient reliability. An impurity having influence on carrier concentration in the oxide semiconductor layer, such as a hydrogen atom or a compound containing a hydrogen atom such as H2O, may be eliminated. An oxide insulating layer containing a large number of defects such as dangling bonds may be formed in contact with the oxide semiconductor layer, such that the impurity diffuses into the oxide insulating layer and the impurity concentration in the oxide semiconductor layer is reduced. The oxide semiconductor layer or the oxide insulating layer in contact with the oxide semiconductor layer may be formed in a deposition chamber which is evacuated with use of a cryopump whereby the impurity concentration is reduced.
摘要翻译：目的在于提供一种薄膜晶体管及其制造方法，该薄膜晶体管包括具有受控阈值电压，高操作速度，相对容易的制造工艺以及足够的可靠性的氧化物半导体。可以消除影响氧化物半导体层中的载流子浓度的杂质，例如氢原子或含有氢原子如H 2 O的化合物。可以与氧化物半导体层接触形成含有大量缺陷的氧化物绝缘层，例如悬挂键，使得杂质扩散到氧化物绝缘层中，并且氧化物半导体层中的杂质浓度降低。与氧化物半导体层接触的氧化物半导体层或氧化物绝缘层可以在使用低温泵抽真空的沉积室中形成，从而杂质浓度降低。

30. 发明申请

US20110031492A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：US20110031492A1
公开(公告)日：2011-02-10
申请号：US12848389
申请日：2010-08-02
申请人： Shunpei YAMAZAKI , Junichiro SAKATA , Miyuki HOSOBA , Tatsuya TAKAHASHI
发明人： Shunpei YAMAZAKI , Junichiro SAKATA , Miyuki HOSOBA , Tatsuya TAKAHASHI
IPC分类号： H01L29/786 , H01L21/44
CPC分类号： H01L27/3262 , H01L27/1222 , H01L27/1225 , H01L27/124 , H01L27/1255 , H01L27/32 , H01L27/3248 , H01L29/45
摘要： The semiconductor device includes a driver circuit including a first thin film transistor and a pixel including a second thin film transistor over one substrate. The first thin film transistor includes a first gate electrode layer, a gate insulating layer, a first oxide semiconductor layer, a first oxide conductive layer, a second oxide conductive layer, an oxide insulating layer which is in contact with part of the first oxide semiconductor layer and which is in contact with peripheries and side surfaces of the first and second oxide conductive layers, a first source electrode layer, and a first drain electrode layer. The second thin film transistor includes a second gate electrode layer, a second oxide semiconductor layer, and a second source electrode layer and a second drain electrode layer each formed using a light-transmitting material.
摘要翻译：半导体器件包括驱动电路，该驱动电路包括第一薄膜晶体管和在一个衬底上包括第二薄膜晶体管的像素。第一薄膜晶体管包括第一栅极电极层，栅极绝缘层，第一氧化物半导体层，第一氧化物导电层，第二氧化物导电层，与第一氧化物半导体的一部分接触的氧化物绝缘层并且与第一和第二氧化物导电层的周边和侧表面接触，第一源极电极层和第一漏极电极层。第二薄膜晶体管包括使用透光材料形成的第二栅极电极层，第二氧化物半导体层以及第二源电极层和第二漏极电极层。

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