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21. 发明授权

US09065003B2 Semiconductor light emitting device and semiconductor wafer 有权
标题翻译：半导体发光器件和半导体晶片
公开(公告)号：US09065003B2
公开(公告)日：2015-06-23
申请号：US13405509
申请日：2012-02-27
申请人： Hisashi Yoshida , Koichi Tachibana , Tomonari Shioda , Toshiki Hikosaka , Jongil Hwang , Hung Hung , Naoharu Sugiyama , Shinya Nunoue
发明人： Hisashi Yoshida , Koichi Tachibana , Tomonari Shioda , Toshiki Hikosaka , Jongil Hwang , Hung Hung , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L29/06 , H01L33/12 , H01L33/32 , H01L33/02
CPC分类号： H01L33/12 , H01L33/02 , H01L33/32
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer and configured to emit a light having a peak wavelength of 440 nanometers or more. Tensile strain is applied to the first semiconductor layer. An edge dislocation density of the first semiconductor layer is 5×109/cm2 or less. A lattice mismatch factor between the first semiconductor layer and the light emitting layer is 0.11 percent or less.
摘要翻译：根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层，发出峰值波长为440纳米以上的光。对第一半导体层施加拉伸应变。第一半导体层的边缘位错密度为5×10 9 / cm 2以下。第一半导体层和发光层之间的晶格失配因子为0.11％以下。

22. 发明授权

US08698123B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08698123B2
公开(公告)日：2014-04-15
申请号：US13213373
申请日：2011-08-19
申请人： Tomonari Shioda , Hisashi Yoshida , Naoharu Sugiyama , Shinya Nunoue
发明人： Tomonari Shioda , Hisashi Yoshida , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L29/06 , H01L27/15
CPC分类号： H01L33/06 , H01L33/04 , H01L33/32
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting part. The n-type semiconductor layer includes a nitride semiconductor. The p-type semiconductor layer includes a nitride semiconductor. The light emitting part is provided between the n-type and the p-type semiconductor layers and includes an n-side barrier layer and a first light emitting layer. The first light emitting layer includes a first barrier layer, a first well layer, and a first AlGaN layer. The first barrier layer is provided between the n-side barrier layer and the p-type semiconductor layer. The first well layer contacts the n-side barrier layer between the n-side and the first barrier layer. The first AlGaN layer is provided between the first well layer and the first barrier layer. A peak wavelength λp of light emitted from the light emitting part is longer than 515 nanometers.
摘要翻译：根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层和发光部分。 n型半导体层包括氮化物半导体。 p型半导体层包括氮化物半导体。发光部分设置在n型和p型半导体层之间，并且包括n侧阻挡层和第一发光层。第一发光层包括第一阻挡层，第一阱层和第一AlGaN层。第一阻挡层设置在n侧势垒层和p型半导体层之间。第一阱层与n侧和第一阻挡层之间的n侧势垒层接触。第一AlGaN层设置在第一阱层和第一势垒层之间。从发光部发出的光的峰值波长λp长于515nm。

23. 发明申请

US20130234151A1 NITRIDE SEMICONDUCTOR ELEMENT AND NITRIDE SEMICONDUCTOR WAFER 有权
标题翻译：氮化物半导体元件和氮化物半导体晶体管
公开(公告)号：US20130234151A1
公开(公告)日：2013-09-12
申请号：US13602868
申请日：2012-09-04
申请人： Toshiki HIKOSAKA , Yoshiyuki Harada , Hisashi Yoshida , Naoharu Sugiyama , Shinya Nunoue
发明人： Toshiki HIKOSAKA , Yoshiyuki Harada , Hisashi Yoshida , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L29/20
CPC分类号： H01L29/205 , B82Y20/00 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L29/2003 , H01L29/365 , H01L29/7783 , H01L33/06 , H01L33/12 , H01L33/32
摘要： According to one embodiment, a nitride semiconductor element includes a foundation layer, a functional layer and a stacked body. The stacked body is provided between the foundation layer and the functional layer. The stacked body includes a first stacked intermediate layer including a first GaN intermediate layer, a first high Al composition layer of Alx1Ga1-x1N (0
摘要翻译：根据一个实施例，氮化物半导体元件包括基底层，功能层和层叠体。层叠体设置在基础层和功能层之间。层叠体包括第一层叠中间层，其包括第一GaN中间层，Al x Ga 1-x N 1的第一高Al组成层（0

24. 外观设计

USD638522S1 Seal ring for stern tube 有权
公开(公告)号：USD638522S1
公开(公告)日：2011-05-24
申请号：US29366130
申请日：2010-07-20
申请人： Hisashi Yoshida , Motofumi Inaba , Minoru Takayasu
设计人： Hisashi Yoshida , Motofumi Inaba , Minoru Takayasu

25. 发明申请

US20100315003A1 AUTOMOTIVE DISCHARGE LAMP 有权
标题翻译：汽车排气灯
公开(公告)号：US20100315003A1
公开(公告)日：2010-12-16
申请号：US12867520
申请日：2008-12-10
申请人： Ryo Itou , Makoto Deguchi , Syuhei Abe , Hisashi Yoshida , Masahiro Doi
发明人： Ryo Itou , Makoto Deguchi , Syuhei Abe , Hisashi Yoshida , Masahiro Doi
IPC分类号： H01J61/12 , B60Q1/00
CPC分类号： H01J61/34
摘要： Disclosed is an automotive discharge lamp, comprising an inner tube (1) including a light emitting unit (11) having a first space (15) therein and seal portions formed on the light emitting unit (11), a discharge medium containing a first gas enclosed in the first space (15), a metal foil (31) sealed in the seal portions (12), electrodes (32) with one end connected to the metal foil (31) and other end extended into the first space (15), and an outer tube (5) connected to the inner tube (1) to form a second space (51) between the outer tube (5) and the inner tube (1), wherein the second space (51) has a second gas enclosed therein and the second gas contains oxygen in a concentration of 1.0 volume % or less.
摘要翻译：公开了一种汽车放电灯，包括内管（1），包括其中具有第一空间（15）的发光单元（11）和形成在发光单元（11）上的密封部分的发光单元，包含第一气体封闭在第一空间（15）中，密封在密封部分（12）中的金属箔（31），一端连接到金属箔（31）的电极（32）和延伸到第一空间（15）的另一端，和连接到内管（1）的外管（5），以在外管（5）和内管（1）之间形成第二空间（51），其中第二空间（51）具有第二气体并且第二气体含有浓度为1.0体积％以下的氧。

26. 外观设计

USD570567S1 Vacuum cleaner 有权
公开(公告)号：USD570567S1
公开(公告)日：2008-06-03
申请号：US29282882
申请日：2007-07-31
申请人： Masakazu Umeda , Taro Iike , Hisashi Yoshida , Morgan Brown
设计人： Masakazu Umeda , Taro Iike , Hisashi Yoshida , Morgan Brown

27. 发明授权

US07241306B2 Narrow-band UV-B phototherapeutic device 有权
标题翻译：窄带UV-B光疗装置
公开(公告)号：US07241306B2
公开(公告)日：2007-07-10
申请号：US10855841
申请日：2004-05-28
申请人： Maki Minamoto , Yosuke Nishikage , Akimichi Morita , Hisashi Yoshida
发明人： Maki Minamoto , Yosuke Nishikage , Akimichi Morita , Hisashi Yoshida
IPC分类号： H01J17/16 , H01J1/62
CPC分类号： A61N5/0616 , A61N2005/005 , A61N2005/0644 , A61N2005/0655 , A61N2005/0661 , C09K11/7772 , C09K11/778 , H01J61/305 , H01J61/44
摘要： A narrow-band UV-B phototherapeutic device includes: a light source unit that includes a fluorescent lamp of planar structure that is the ultraviolet light source for emitting narrow-band UV-B; a power supply for causing the fluorescent lamp to emit light; and a control unit for controlling the light emission of the fluorescent lamp.
摘要翻译：窄带UV-B光电设备包括：光源单元，其包括作为用于发射窄带UV-B的紫外光源的平面结构的荧光灯; 用于使荧光灯发光的电源; 以及用于控制荧光灯的发光的控制单元。

28. 发明授权

US06762559B1 High-pressure mercury discharge lamp and lighting apparatus using the lamp 失效
标题翻译：高压汞放电灯和使用灯的照明装置
公开(公告)号：US06762559B1
公开(公告)日：2004-07-13
申请号：US09737822
申请日：2000-12-18
申请人： Satoko Ishikawa , Ichiro Tanaka , Hiromichi Kawashima , Hisashi Yoshida
发明人： Satoko Ishikawa , Ichiro Tanaka , Hiromichi Kawashima , Hisashi Yoshida
IPC分类号： H01J1720
CPC分类号： H01J61/20 , H01J61/86
摘要： A high-pressure mercury discharge lamp comprises a light-transmitting discharge vessel having a region surrounding a discharge space and seal portion, a spaced apart electrodes disposed in the discharge vessel and defining a discharge path, and a filling contained in the discharge vessel including mercury, halogen and lithium (Li). Components of the filling are selected such that a ratio of relative spectral energies B/A is within a range 0.15 to 0.45; wherein A represents the relative spectral energy of mercury (Hg) within a wavelenth range of 402.5 nm to 407.5 nm, and B represents the rlative spectral energy of lithium (Li) within a wavelength range of 667.5 nm to 672.5 nm.
摘要翻译：一种高压汞放电灯包括具有围绕放电空间和密封部分的区域的光透射放电容器，设置在放电容器中并限定放电路径的间隔开的电极，以及包含在包括汞的放电容器中的填充物，卤素和锂（Li）。选择填充物的成分，使得相对光谱能量B / A的比例在0.15〜0.45的范围内; 其中A表示在402.5nm至407.5nm的波长范围内的汞（Hg）的相对光谱能，B表示在667.5nm至672.5nm的波长范围内的锂（Li）的烧蚀光谱能。

29. 发明授权

US06749118B2 Automatic ticket gate apparatus 失效
标题翻译：自动检票机
公开(公告)号：US06749118B2
公开(公告)日：2004-06-15
申请号：US09793890
申请日：2001-02-28
申请人： Takashi Kobayashi , Yoshinori Muraoka , Hisashi Yoshida
发明人： Takashi Kobayashi , Yoshinori Muraoka , Hisashi Yoshida
IPC分类号： G06K708
CPC分类号： G07C9/02
摘要： An automatic ticket gate apparatus comprising a box defining the passage for ticket checking and a communicating face inclined to the horizontal to the side of passage, which is provided on the top of box and is provided with a wireless communicator communicating with a wireless ticket, and a ticket checking unit, which performs the ticket checking process basing upon the result of communication with a wireless ticket through the wireless communicator.
摘要翻译：一种自动检票装置，包括一个限定用于检票的通道的盒子和一个设置在盒子顶部的与通向侧面的水平面相反的连通面，并设有与无线车票通信的无线通信器，票检查单元，其基于通过无线通信器与无线车票进行通信的结果执行检票处理。

30. 发明授权

US09397167B2 Nitride semiconductor wafer, nitride semiconductor device, and method for manufacturing nitride semiconductor wafer 有权
标题翻译：氮化物半导体晶片，氮化物半导体器件以及氮化物半导体晶片的制造方法
公开(公告)号：US09397167B2
公开(公告)日：2016-07-19
申请号：US13729713
申请日：2012-12-28
申请人： Hisashi Yoshida , Toshiki Hikosaka , Yoshiyuki Harada , Naoharu Sugiyama , Shinya Nunoue
发明人： Hisashi Yoshida , Toshiki Hikosaka , Yoshiyuki Harada , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L29/15 , H01L29/20 , H01L21/02 , H01L29/778 , H01L29/06 , H01L33/00 , H01L33/12
CPC分类号： H01L29/2003 , H01L21/02104 , H01L21/02381 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L29/0649 , H01L29/7786 , H01L33/007 , H01L33/12
摘要： A nitride semiconductor wafer includes a silicon substrate, a stacked multilayer unit, a silicon-containing unit, and an upper layer unit. The silicon substrate has a major surface. The stacked multilayer unit is provided on the major surface. The stacked multilayer unit includes N number of buffer layers. The buffer layers include an i-th buffer layer, and an (i+1)-th buffer layer provided on the i-th buffer layer. The i-th buffer layer has an i-th lattice length Wi in a first direction parallel to the major surface. The (i+1)-th buffer layer has an (i+1)-th lattice length W(i+1) in the first direction. A relation that (W(i+1)−Wi)/Wi≦0.008 is satisfied for all the buffer layers. The silicon-containing unit is provided on the stacked multilayer unit. The upper layer unit is provided on the silicon-containing unit.
摘要翻译：氮化物半导体晶片包括硅衬底，堆叠多层单元，含硅单元和上层单元。硅衬底具有主表面。堆叠的多层单元设置在主表面上。堆叠的多层单元包括N个缓冲层。缓冲层包括第i个缓冲层和设置在第i个缓冲层上的第（i + 1）个缓冲层。第i个缓冲层在平行于主表面的第一方向上具有第i个晶格长度Wi。第（i + 1）个缓冲层在第一方向具有第（i + 1）个格子长度W（i + 1）。对于所有缓冲层，满足（W（i + 1）-Wi）/ Wi＆nlE; 0.008的关系。含硅单元设置在堆叠的多层单元上。上层单元设置在含硅单元上。

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