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21. 发明授权

US08099563B2 Storage device and access instruction sending method 有权
标题翻译：存储设备和访问指令发送方式
公开(公告)号：US08099563B2
公开(公告)日：2012-01-17
申请号：US12081902
申请日：2008-04-23
申请人： Masatomo Ohno , Hideaki Fukuda , Yasuhiro Igarashi
发明人： Masatomo Ohno , Hideaki Fukuda , Yasuhiro Igarashi
IPC分类号： G06F12/00
CPC分类号： G06F3/0659 , G06F3/0613 , G06F3/0656 , G06F3/067 , G06F12/084 , G06F12/0866
摘要： A storage device for storing data sent from a host apparatus comprises a plurality of processors sending to a cache memory controller an access instruction relating to transmission of the data, based on an access request relating to the transmission of the data, the access request being sent from the host apparatus; and an access instruction sending unit exclusively sending to the cache memory the access instruction sent from the plurality of processors, wherein the access instruction sending unit includes a plurality of storage units for storing an access instruction which requires a response, and wherein when the access instruction which requires a response is stored in all of the storage units, the access instruction sending unit sends only an access instruction which requires a response to the cache memory controller.
摘要翻译：用于存储从主机设备发送的数据的存储设备包括多个处理器，根据与数据传输相关的访问请求向高速缓冲存储器控制器发送与数据传输相关的访问指令，所述访问请求被发送从主机; 以及访问指令发送单元，向所述高速缓存存储器发送从所述多个处理器发送的访问指令，其中所述访问指令发送单元包括用于存储需要响应的访问指令的多个存储单元，并且其中当所述访问指令这要求响应存储在所有存储单元中，访问指令发送单元仅发送需要对高速缓冲存储器控制器的响应的访问指令。

22. 发明授权

US07799134B2 Shower plate having projections and plasma CVD apparatus using same 有权
标题翻译：具有投影的淋浴板和使用其的等离子体CVD装置
公开(公告)号：US07799134B2
公开(公告)日：2010-09-21
申请号：US11061986
申请日：2005-02-18
申请人： Naoto Tsuji , Hideaki Fukuda , Hiroki Arai , Yoshinori Morisada , Tamihiro Kobayashi
发明人： Naoto Tsuji , Hideaki Fukuda , Hiroki Arai , Yoshinori Morisada , Tamihiro Kobayashi
IPC分类号： H01L21/00
CPC分类号： C23C16/45565 , C23C16/345 , C23C16/5096 , H01J37/32082 , H01J37/3244
摘要： A shower plate 122 has protrusions 22 formed on the front face used with a first electrode in a plasma CVD apparatus. A plane-surface portion 23 is left around apertures of gas inlet holes 21 formed in the shower plate 122. With protrusions 22 being formed, a surface area of the first electrode is increased.
摘要翻译：喷淋板122具有形成在等离子体CVD装置中与第一电极一起使用的正面上的突起22。平面表面部分23留在形成在喷淋板122中的气体入口孔21的孔周围。随着形成突起22，第一电极的表面积增加。

23. 发明申请

US20090155488A1 SHOWER PLATE ELECTRODE FOR PLASMA CVD REACTOR 审中-公开
标题翻译：用于等离子体CVD反应器的电极板
公开(公告)号：US20090155488A1
公开(公告)日：2009-06-18
申请号：US11959410
申请日：2007-12-18
申请人： Ryu Nakano , Hideaki Fukuda
发明人： Ryu Nakano , Hideaki Fukuda
IPC分类号： C23C16/513 , B08B7/00
CPC分类号： C23C16/45565 , C23C16/505
摘要： Methods and apparatuses for plasma chemical vapor deposition (CVD). In particular, a plasma CVD apparatus having a cleaning function, has an improved shower plate with holes having a uniform cross-sectional area to yield a high cleaning rate. The shower plate may serve as an electrode, and may have an electrically conductive extension connected to a power source. The shower plate, through which both cleaning gases and reaction source gases flow, may include a hole machined surface area with a size different than conventionally used to ensure a good film thickness uniformity during a deposition process. The size of the hole machined surface area may vary based on the size of a substrate to be processed, or the size of the entire surface of the shower plate.
摘要翻译：等离子体化学气相沉积（CVD）的方法和装置。特别地，具有清洁功能的等离子体CVD装置具有具有均匀横截面积的孔的改进的喷淋板，以产生高的清洗率。淋浴板可以用作电极，并且可以具有连接到电源的导电延伸部。两个清洁气体和反应源气体都流过的淋浴板可以包括孔加工的表面积，其尺寸不同于常规用于确保在沉积过程中良好的膜厚均匀性。孔加工表面积的尺寸可以根据待处理的基底的尺寸或淋浴板的整个表面的尺寸而变化。

24. 发明申请

US20050183666A1 Shower plate having projections and plasma CVD apparatus using same 有权
标题翻译：具有投影的淋浴板和使用其的等离子体CVD装置
公开(公告)号：US20050183666A1
公开(公告)日：2005-08-25
申请号：US11061986
申请日：2005-02-18
申请人： Naoto Tsuji , Hideaki Fukuda , Hiroki Arai , Yoshinori Morisada , Tamihiro Kobayashi
发明人： Naoto Tsuji , Hideaki Fukuda , Hiroki Arai , Yoshinori Morisada , Tamihiro Kobayashi
IPC分类号： H05H1/46 , C23C16/00 , C23C16/34 , C23C16/44 , C23C16/455 , C23C16/509 , H01J37/32 , H01L21/31
CPC分类号： C23C16/45565 , C23C16/345 , C23C16/5096 , H01J37/32082 , H01J37/3244
摘要： A shower plate 122 has protrusions 22 formed on the front face used with a first electrode in a plasma CVD apparatus. A plane-surface portion 23 is left around apertures of gas inlet holes 21 formed in the shower plate 122. With protrusions 22 being formed, a surface area of the first electrode is increased.
摘要翻译：喷淋板122具有形成在等离子体CVD装置中与第一电极一起使用的正面上的突起22。平面表面部分23留在形成在喷淋板122中的气体入口孔21的孔周围。随着形成突起22，第一电极的表面积增加。

25. 发明授权

US08784950B2 Method for forming aluminum oxide film using Al compound containing alkyl group and alkoxy or alkylamine group 有权
标题翻译：使用含有烷基和烷氧基或烷基胺基团的Al化合物形成氧化铝膜的方法
公开(公告)号：US08784950B2
公开(公告)日：2014-07-22
申请号：US13550419
申请日：2012-07-16
申请人： Atsuki Fukazawa , Hideaki Fukuda
发明人： Atsuki Fukazawa , Hideaki Fukuda
IPC分类号： H05H1/24 , C23C16/00
CPC分类号： C23C16/45542 , C23C16/403
摘要： A method for forming a conformal film of aluminum oxide on a substrate having a patterned underlying layer by PEALD includes: adsorbing an Al precursor containing an Al—C bond and an Al—O—C or Al—N—C bond; providing an oxidizing gas and an inert gas; applying RF power to the reactant gas and the reaction-assisting gas to react the adsorbed precursor with the reactant gas on the surface, thereby forming a conformal film of aluminum oxide on the patterned underlying layer of the substrate, wherein the substrate is kept at a temperature of about 200° C. or lower.
摘要翻译：通过PEALD在具有图案化底层的基板上形成氧化铝保形膜的方法包括：吸附含有Al-C键和Al-O-C或Al-N-C键的Al前体; 提供氧化气体和惰性气体; 对反应气体和反应辅助气体施加RF功率以使吸附的前体与表面上的反应气体反应，从而在衬底的图案化底层上形成氧化铝的保形膜，其中衬底保持在温度约为200℃以下。

26. 发明申请

US20130014896A1 Wafer-Supporting Device and Method for Producing Same 审中-公开
标题翻译：晶圆支撑装置及其制作方法
公开(公告)号：US20130014896A1
公开(公告)日：2013-01-17
申请号：US13184351
申请日：2011-07-15
申请人： Fumitaka Shoji , Hideaki Fukuda
发明人： Fumitaka Shoji , Hideaki Fukuda
IPC分类号： B05C13/00 , C23C16/458 , B05D5/00 , H01L21/3065
摘要： A wafer-supporting device for supporting a wafer thereon adapted to be installed in a semiconductor-processing apparatus includes: a base surface; and protrusions protruding from the base surface and having rounded tips for supporting a wafer thereon. The rounded tips are such that a reverse side of a wafer is supported entirely by the rounded tips by point contact. The protrusions are disposed substantially uniformly on an area of the base surface over which a wafer is placed, wherein the number (N) and the height (H [μm]) of the protrusions as determined in use satisfy the following inequities per area for a 300-mm wafer: (−0.5N+40)≦H≦53; 5≦N
摘要翻译：一种用于支撑其上适用于安装在半导体处理装置中的晶片的晶片支撑装置包括：基面; 以及从基面突出并具有用于在其上支撑晶片的圆形末端的突起。圆形尖端使得晶片的反面通过点接触由圆形尖端完全支撑。突起部基本上均匀地设置在放置晶片的基底表面的区域上，其中在使用中确定的突起的数量（N）和高度（H [μm]）满足以下每个区域的不等式 300mm晶片：（-0.5N + 40）＆nlE; H＆amp; NlE; 53; 5＆nlE; N <100。

27. 发明授权

US07833353B2 Liquid material vaporization apparatus for semiconductor processing apparatus 有权
标题翻译：用于半导体处理装置的液体材料蒸发装置
公开(公告)号：US07833353B2
公开(公告)日：2010-11-16
申请号：US11626777
申请日：2007-01-24
申请人： Kazunori Furukawahara , Hideaki Fukuda
发明人： Kazunori Furukawahara , Hideaki Fukuda
IPC分类号： C23C16/455 , B01D1/14
CPC分类号： C23C16/4485 , C23C16/54
摘要： A liquid material vaporization apparatus for a semiconductor processing apparatus includes: a vaporization tank; an inner partition wall disposed in the tank for dividing the interior of the tank into a charging compartment and a vaporization compartment which are liquid-communicatable with each other over an upper edge of the inner partition wall. A liquid material charged in the charging compartment overflows over the upper edge of the inner partition wall toward the vaporization compartment to store and vaporize the liquid material in the vaporization compartment.
摘要翻译：一种用于半导体处理装置的液体材料蒸发装置，包括：蒸发槽; 设置在所述罐中的内分隔壁，用于将所述罐的内部分隔成在所述内分隔壁的上边缘上彼此液体连通的充气室和蒸发室。装入充电室的液体材料在内分隔壁的上边缘朝向蒸发室溢出，从而将蒸发室内的液体材料储存并蒸发。

28. 发明申请

US20090249173A1 Storage system and data storage method 失效
标题翻译：存储系统和数据存储方法
公开(公告)号：US20090249173A1
公开(公告)日：2009-10-01
申请号：US12155207
申请日：2008-05-30
申请人： Osamu Torigoe , Hideaki Fukuda
发明人： Osamu Torigoe , Hideaki Fukuda
IPC分类号： G06F11/07
CPC分类号： G06F11/108 , G06F2211/1009
摘要： The storage system includes a first memory device configured to store data sent from a host system, a first memory device controller configured to control read/write access of the data from/to the first memory device, an arithmetic circuit unit configured to calculate parity data based on the data, a second memory device configured to store the parity data, a second memory device controller configured to control read/write access of the parity data from/to the second memory device. With this storage system, read access speed of the first memory device is faster than read access speed of the second memory device.
摘要翻译：所述存储系统包括被配置为存储从主机系统发送的数据的第一存储器件，被配置为控制来自/到所述第一存储器件的数据的读/写访问的第一存储器件控制器，被配置为计算奇偶校验数据的算术电路单元基于所述数据，被配置为存储所述奇偶校验数据的第二存储器设备，被配置为控制来自/到所述第二存储器设备的奇偶校验数据的读/写访问的第二存储器设备控制器。利用该存储系统，第一存储器件的读取访问速度比第二存储器件的读取速度快。

29. 发明申请

US20090098741A1 METHOD FOR FORMING ULTRA-THIN BORON-CONTAINING NITRIDE FILMS AND RELATED APPARATUS 审中-公开
标题翻译：用于形成含有超薄硼烷的氮化物膜和相关装置的方法
公开(公告)号：US20090098741A1
公开(公告)日：2009-04-16
申请号：US11872619
申请日：2007-10-15
申请人： Rei Tanaka , Takashige Watanabe , Hideaki Fukuda
发明人： Rei Tanaka , Takashige Watanabe , Hideaki Fukuda
IPC分类号： H01L21/31 , B05C11/00
CPC分类号： H01L21/02112 , C23C16/34 , C23C16/342 , C23C16/5096 , H01L21/02123 , H01L21/02205 , H01L21/02211 , H01L21/02274 , H01L21/318
摘要： Boron-containing nitride films, including silicon boron nitride and boron nitride films, are deposited during, e.g., integrated circuit fabrication. The films are deposited in a process chamber having a reaction space that is defined as an open volume of the chamber directly above the substrate. The boron-containing nitride films are formed by flowing silicon and boron precursors into the process chamber while maintaining the volume, as measured under standard conditions, of silicon and boron precursors, e.g., SiH4 and B2H6, flowed into the process chamber per minute at about 6.2% or less of the volume of the reaction space. In some embodiments, N2 is flowed into the process chamber at a flow rate of about 100 times the total flow rate of the silicon and boron precursors. The deposited films have good film thickness controllability and high in-plane film thickness uniformity for use as, e.g., etch stop layers.
摘要翻译：含氮氮化物膜，包括氮化硼和氮化硼膜在例如集成电路制造期间被沉积。将膜沉积在具有反应空间的处理室中，该反应空间被定义为在基板正上方的室的开放体积。含硼氮化物膜通过将硅和硼前体流入处理室而形成，同时保持在标准条件下测量的硅和硼前体（例如SiH 4和B 2 H 6）的体积在每分钟左右流入处理室反应空间体积为6.2％以下。在一些实施方案中，N 2以约100倍硅和硼前体总流速的流速流入处理室。沉积膜具有良好的膜厚可控性和高的平面内膜厚均匀性，可用作例如蚀刻停止层。

30. 发明申请

US20080086585A1 STORAGE APPARATUS, CONTROLLER AND CONTROL METHOD 有权
标题翻译：存储设备，控制器和控制方法
公开(公告)号：US20080086585A1
公开(公告)日：2008-04-10
申请号：US11563855
申请日：2006-11-28
申请人： Hideaki Fukuda , Naoki Moritoki
发明人： Hideaki Fukuda , Naoki Moritoki
IPC分类号： G06F12/00 , G06F13/00 , G06F13/28
CPC分类号： G06F12/0868 , G06F3/061 , G06F3/0616 , G06F3/0646 , G06F3/0655 , G06F3/0656 , G06F3/068 , G06F2212/217 , Y02D10/13
摘要： Proposed is a highly reliable storage apparatus with fast access speed and low power consumption, as well as a controller and control method for controlling such a storage apparatus. This storage apparatus is equipped with a flash memory that provides a storage extent for storing data, a disk-shaped memory device with more data write cycles than the flash memory, and a cache memory with faster access speed than the flash memory. Data provided from a host system is stored in the cache memory, this data is read from the cache memory at a prescribed timing, data read from the cache memory is stored in the disk-shaped memory device, and, when a prescribed condition is satisfied, this data is read from the disk-shaped memory device, and the data read from the disk-shaped memory device is stored in the flash memory.
摘要翻译：提出了具有快速访问速度和低功耗的高度可靠的存储装置，以及用于控制这种存储装置的控制器和控制方法。该存储装置配备有提供用于存储数据的存储范围的闪速存储器，具有比闪存更多的数据写入周期的盘形存储器件，以及具有比闪存更快的存取速度的高速缓冲存储器。从主机系统提供的数据被存储在高速缓冲存储器中，在规定的时刻从高速缓冲存储器读出该数据，从高速缓冲存储器读出的数据存储在盘状存储装置中，并且当满足规定的条件时从盘状存储装置读取该数据，从盘状存储装置读取的数据存储在闪速存储器中。

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