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21. 外观设计

USD499439S1 Electronic camera 失效
公开(公告)号：USD499439S1
公开(公告)日：2004-12-07
申请号：US29199870
申请日：2004-02-23
申请人： Kazuhisa Horikiri , Hiroyuki Sakai
设计人： Kazuhisa Horikiri , Hiroyuki Sakai

22. 发明授权

US06807380B2 Wireless communication system and image forming device 有权
标题翻译：无线通信系统和图像形成装置
公开(公告)号：US06807380B2
公开(公告)日：2004-10-19
申请号：US10227464
申请日：2002-08-26
申请人： Atsushi Iida , Kanou Saitou , Hiroyuki Sakai
发明人： Atsushi Iida , Kanou Saitou , Hiroyuki Sakai
IPC分类号： G03G1500
CPC分类号： G03G21/1882 , G03G2221/1823
摘要： Tag side antennas attached at cartridge accessories and main body side antennas can be disposed sufficiently close to one another and facing one another without an increase in size of a device, even if the tag side antennas cannot be attached so as to cover end surface portions of the cartridge accessories and/or the number of the cartridge accessories mounted at the device main body is large. Tag side antennas disposed at each of toner cartridges are formed by conductive wiring in coil shapes. The toner cartridges are supported such that axes of these coils are substantially orthogonal to an insertion/removal direction at a cartridge holder. A main body side antenna is also formed by conductive wiring in a coil shape, has a coil axis substantially orthogonal to the insertion/removal direction, and may be supported interposed in a space between two of the toner cartridges.
摘要翻译：附着在盒附件和主体侧天线上的标签侧天线可以彼此充分地布置并且彼此面对，而不增加装置的尺寸，即使标签侧天线不能被附着以覆盖端部表面部分盒附件和/或安装在装置主体上的盒式配件的数量大。设置在每个调色剂盒的标签侧天线由线圈形状的导电布线形成。这些调色剂盒被支撑成使得这些线圈的轴线大致正交于盒保持器处的插入/取出方向。主体侧天线也由线状的导电布线形成，具有基本上与插入/取出方向正交的线圈轴线，并且可以被夹持在两个墨粉盒之间的空间中。

23. 发明授权

US06501191B2 Heat treatment apparatus and method 失效
公开(公告)号：US06501191B2
公开(公告)日：2002-12-31
申请号：US09989080
申请日：2001-11-21
申请人： Takashi Tanaka , Shinji Nagashima , Hiroyuki Sakai
发明人： Takashi Tanaka , Shinji Nagashima , Hiroyuki Sakai
IPC分类号： C23C1600
CPC分类号： H01L21/67253 , C30B33/005
摘要： A heat treatment apparatus for applying a predetermined heat treatment to a substrate includes: for example, a dielectric low oxygen controlled cure unit (DLC unit) for forming an interlayer insulating film on a semiconductor wafer W; a hot plate for supporting the wafer W a predetermined distance apart from the surface thereof; a chamber for housing the wafer W; a gas collecting port formed in that portion of the hot plate which corresponds to the lower side of the wafer W when the wafer W is disposed on the hot plate; and an oxygen sensor for measuring the oxygen concentration in the gas collected from the gas collecting port. Since the oxygen concentration can be measured during the heat treatment to the wafer W, the characteristics of the interlayer insulating film formed can be maintained constant.

24. 发明授权

US5955178A Electro-conductive oxides and electrodes using the same 失效
标题翻译：导电氧化物和使用其的电极
公开(公告)号：US5955178A
公开(公告)日：1999-09-21
申请号：US831970
申请日：1997-04-02
申请人： Masahiro Orita , Hiroyuki Sakai , Megumi Takeuchi , Hiroaki Tanji
发明人： Masahiro Orita , Hiroyuki Sakai , Megumi Takeuchi , Hiroaki Tanji
IPC分类号： C01G15/00 , G02F1/1343 , H01B1/08 , H01L21/28 , H01L21/285 , H01L31/04 , H05B33/28
CPC分类号： H01B1/08 , C01G15/006 , H05B33/28 , G02F1/13439 , Y10S428/917 , Y10S428/918 , Y10T428/24802 , Y10T428/24917 , Y10T428/24926 , Y10T428/29 , Y10T428/31681
摘要： Electro-conductive oxides showing excellent electro-conductivity, electrodes using the electro-conductive oxide and methods for manufacturing the same are described. The electro-conductive oxides are represented by the general formula: M(1).sub.x M(2).sub.y In.sub.z O.sub.(x+3y/2+3z/2)-d. The above electro-conductive oxides show not only excellent electro-conductivity but also excellent transparency all over the visible region and therefore they are particularly useful as, for example, electrodes for liquid crystal displays, EL displays and solar cells, which require light transmission.
摘要翻译：描述了导电性优异的导电氧化物，使用导电氧化物的电极及其制造方法。导电氧化物由通式M（1）xM（2）yInzO（x + 3y / 2 + 3z / 2）-d表示。上述导电氧化物不仅在可见区域上显示出优异的导电性，而且具有优异的透明性，因此它们特别可用于例如需要透光的液晶显示器，EL显示器和太阳能电池的电极。

25. 发明授权

US5912849A Write Protection for a non-volatile memory 有权
标题翻译：写保护用于非易失性存储器
公开(公告)号：US5912849A
公开(公告)日：1999-06-15
申请号：US141564
申请日：1998-08-28
申请人： Yoshihiko Yasu , Hiroyuki Sakai , Michael W. Yeager , Donald J. Verhaeghe
发明人： Yoshihiko Yasu , Hiroyuki Sakai , Michael W. Yeager , Donald J. Verhaeghe
IPC分类号： G11C16/02 , G06F12/14 , G06F21/02 , G11C7/24 , G11C11/22 , G11C7/00
CPC分类号： G11C7/24 , G11C11/22
摘要： A semiconductor memory device, divided into plural blocks, comprising: a memory array having a non-volatile memory element which makes the read cycle and the write cycle to be substantially equivalent; plural storage elements storing the information of write protection/permission corresponding to each said block respectively; and a setting circuit to set the information of write protection/permission to said plural storage elements, wherein said setting circuit sets the write-protection information to said plural storage elements at the write cycle after designated plural read cycles. Therefore, the write protection/permission can be set by the unit of block, block by block, so that the write-protected ROM and the RAM can be set freely. Furthermore, the complexity of the setting procedure of write protection/permission may prevent the accidental false setting caused by a system runaway and so forth.
摘要翻译：一种分割成多个块的半导体存储器件，包括：具有非易失性存储元件的存储器阵列，其使读周期和写周期基本上相等; 多个存储元件分别存储与每个所述块相对应的写保护/许可信息; 以及设置电路，用于将所述多个存储元件的写入保护/许可信息设置，其中所述设置电路在指定的多个读取周期之后以写入周期将写入保护信息设置为所述多个存储元件。因此，写保护/许可可以通过块单位来逐块设置，从而可以自由设置写保护ROM和RAM。此外，写保护/许可的设置过程的复杂性可以防止由系统失控引起的意外错误设置等。

26. 发明授权

US5872393A RF semiconductor device and a method for manufacturing the same 失效
标题翻译： RF半导体器件及其制造方法
公开(公告)号：US5872393A
公开(公告)日：1999-02-16
申请号：US738744
申请日：1996-10-28
申请人： Hiroyuki Sakai , Takayuki Yoshida , Yorito Ohta , Kaoru Inoue , Katsunori Nishii , Yoshito Ikeda
发明人： Hiroyuki Sakai , Takayuki Yoshida , Yorito Ohta , Kaoru Inoue , Katsunori Nishii , Yoshito Ikeda
IPC分类号： H01L23/498 , H01L23/66 , H05K1/00 , H01L29/40
CPC分类号： H01L24/13 , H01L23/49894 , H01L23/66 , H01L24/03 , H01L24/05 , H01L24/48 , H01L24/81 , H01L2224/0401 , H01L2224/04042 , H01L2224/05548 , H01L2224/05568 , H01L2224/05599 , H01L2224/10135 , H01L2224/13011 , H01L2224/13023 , H01L2224/13099 , H01L2224/13144 , H01L2224/16225 , H01L2224/16238 , H01L2224/32225 , H01L2224/48463 , H01L2224/73104 , H01L2224/73204 , H01L2224/75 , H01L2224/75301 , H01L2224/81007 , H01L2224/81136 , H01L2224/81139 , H01L2224/81191 , H01L2224/81192 , H01L2224/81801 , H01L2224/83192 , H01L24/16 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01019 , H01L2924/01022 , H01L2924/01027 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/10155 , H01L2924/10329 , H01L2924/1305 , H01L2924/1306 , H01L2924/13062 , H01L2924/13064 , H01L2924/14 , H01L2924/1423 , H01L2924/15787 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H05K3/4676
摘要： In fabricating an MFIC by mounting a semiconductor chip on a substrate having a microstrip line by MBB bonding, a benzocyclobutene (BCB) film is used as a dielectric film of the microstrip line. By providing a means for preventing the deformation, peeling, and cracking of the BCB film during the fabrication process, the thickness of the dielectric film is held substantially equal even after flip-chip mounting, which reduces impedance fluctuations.
摘要翻译：在通过MBB接合将半导体芯片安装在具有微带线的基板上制造MFIC时，使用苯并环丁烯（BCB）膜作为微带线的电介质膜。通过提供在制造过程中防止BCB膜的变形，剥离和破裂的装置，即使在倒装芯片安装之后，电介质膜的厚度也保持基本相等，这降低了阻抗波动。

27. 外观设计

USD377363S Camera 失效
公开(公告)号：USD377363S
公开(公告)日：1997-01-14
申请号：US47398
申请日：1995-12-04
申请人： Makoto Isozaki , Hiroyuki Sakai
设计人： Makoto Isozaki , Hiroyuki Sakai

28. 发明授权

US5510758A Multilayer microstrip wiring board with a semiconductor device mounted thereon via bumps 失效
标题翻译：具有通过凸块安装在其上的半导体器件的多层微带线路板
公开(公告)号：US5510758A
公开(公告)日：1996-04-23
申请号：US223979
申请日：1994-04-06
申请人： Suguru Fujita , Kazuaki Takahashi , Morikazu Sagawa , Hiroyuki Sakai , Yorito Ota , Kaoru Inoue
发明人： Suguru Fujita , Kazuaki Takahashi , Morikazu Sagawa , Hiroyuki Sakai , Yorito Ota , Kaoru Inoue
IPC分类号： G02B6/42 , H01L21/60 , H01L23/66 , H01P3/08 , H01L21/58
CPC分类号： H01L24/17 , H01L23/66 , H01L24/81 , G02B6/4232 , H01L2223/6627 , H01L2224/13099 , H01L2224/16237 , H01L2224/1703 , H01L2224/81801 , H01L2924/01015 , H01L2924/01022 , H01L2924/01027 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/10329 , H01L2924/13064 , H01L2924/14 , H01L2924/1423 , H01L2924/15173 , H01L2924/1903 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025
摘要： A semiconductor device includes a microstrip wiring board. The microstrip wiring board includes a substrate having a main surface, a ground conductor extending on the main surface of the substrate, a dielectric film extending on the ground conductor, and a metal wiring line extending on the dielectric film. A semiconductor chip is connected to the microstrip wiring board via a bump.
摘要翻译：半导体器件包括微带线路板。微带线布线板包括具有主表面的基板，在基板的主表面上延伸的接地导体，在接地导体上延伸的电介质膜和在电介质膜上延伸的金属布线。半导体芯片通过凸块连接到微带线路板。

29. 发明授权

US4851024A Process for producing optical glass 失效
标题翻译：光学玻璃生产工艺
公开(公告)号：US4851024A
公开(公告)日：1989-07-25
申请号：US148570
申请日：1988-01-26
申请人： Hiroyuki Sakai , Shigeaki Ohmi , Yoshitaka Yoneda , Yoshiyuki Asahara
发明人： Hiroyuki Sakai , Shigeaki Ohmi , Yoshitaka Yoneda , Yoshiyuki Asahara
IPC分类号： G02B3/00 , C03B8/00 , C03B32/00 , C03C21/00
CPC分类号： C03C21/001
摘要： A uniform refractive index-type glass is prepared by ion exchange in which a glass containing ions of a first type is immersed in a molten salt containing ions of a second type, the ions in the molten salt having a higher refractive index than the ions in the glass. The glass is removed from the molten salt at a predetermined point and before the saturation point or equilibrium and the ion distribution becomes uniform throughout the glass. The concentration of first and second ions is not uniform from the center of the glass to its outer surface. The glass is next heated to make the concentrations of the first and second ions substantially uniform throughout the glass from the center to the outer surface. Optionally, this glass is then immersed in a molten salt containing a third type of ion having a lower refractive index than the second ion for exchange with part of the ions in the second type. A gradient refractive index-type glass in which the concentration of the second type of ions decreases parabolically from the center of the glass to the outer surface while the concentration of the third type of ions increases parabolically from the center of the glass to the outer surface.
摘要翻译：通过离子交换制备均匀的折射率型玻璃，其中将含有第一类型的离子的玻璃浸入含有第二类离子的熔盐中，熔融盐中的离子的折射率高于玻璃。在预定点和饱和点或平衡之前从熔融盐中除去玻璃，并且整个玻璃中的离子分布变得均匀。第一和第二离子的浓度从玻璃的中心到其外表面是不均匀的。接着加热玻璃使得第一和第二离子的浓度在整个玻璃中从中心到外表面基本上均匀。任选地，将该玻璃浸入含有比第二离子低的折射率的第三类离子的熔盐中，以与第二类型的部分离子交换。梯度折射率型玻璃，其中第二类离子的浓度从玻璃的中心向抛物线减少到外表面，同时第三类离子的浓度从玻璃的中心向抛物面增加到外表面。

30. 发明授权

US4812201A Method of ashing layers, and apparatus for ashing layers 失效
标题翻译：灰化层的方法和灰化层的装置
公开(公告)号：US4812201A
公开(公告)日：1989-03-14
申请号：US73978
申请日：1987-07-15
申请人： Hiroyuki Sakai , Kazutoshi Yoshioka , Kimiharu Matsumura , Keisuke Shigaki , Yutaka Amemiya , Shunichi Iimuro , Haruhiko Yoshioka , Teruhiko Onoe
发明人： Hiroyuki Sakai , Kazutoshi Yoshioka , Kimiharu Matsumura , Keisuke Shigaki , Yutaka Amemiya , Shunichi Iimuro , Haruhiko Yoshioka , Teruhiko Onoe
IPC分类号： G03F7/42 , H01L21/311 , H01L21/302
CPC分类号： H01L21/31138 , G03F7/42
摘要： A method and an apparatus, both for ashing unnecessary layers such as a photoresist layer, formed on a semiconductor wafer, by applying ozone to the layer, are disclosed. An ashing gas containing oxygen atom radical, or containing oxygen gas and an ashing-promoting gas, is applied to the layer, thereby ashing the layer readily and efficiently. The surface temperature of the layer is set at a prescribed value, and the ashing gas is applied uniformly onto the entire surface of the layer, or onto a part thereof, thus ashing the whole layer, or a part thereof, uniformly at a high rate, and the end-point of the ashing process is detected, thereby to enhance the efficiency of the ashing process.
摘要翻译：公开了一种通过在层上施加臭氧来形成在半导体晶片上形成的诸如光致抗蚀剂层等不必要层的方法和装置。含有氧原子基团或含有氧气和促进灰分的气体的灰化气体被施加到该层上，从而使层容易且有效地灰化。将层的表面温度设定为规定值，将灰化气体均匀地涂布在层的整个表面上或其一部分上，从而以高的比例均匀地灰化整个层或其一部分，并且检测灰化过程的终点，从而提高灰化过程的效率。

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