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21. 发明申请

US20050187380A1 Method for treating Th2-mediated disease 有权
标题翻译：治疗Th2介导的疾病的方法
公开(公告)号：US20050187380A1
公开(公告)日：2005-08-25
申请号：US11094718
申请日：2005-03-31
申请人： Kenya Shitara , Nobuo Hanai , Emi Shoji , Mikiko Sakurada , Akiko Furuya , Kazuyasu Nakamura , Rinpei Niwa , Kenji Shibata , Motoo Yamasaki
发明人： Kenya Shitara , Nobuo Hanai , Emi Shoji , Mikiko Sakurada , Akiko Furuya , Kazuyasu Nakamura , Rinpei Niwa , Kenji Shibata , Motoo Yamasaki
IPC分类号： A61P11/06 , A61P17/00 , A61P27/14 , A61P37/08 , C07K16/28 , C12N15/13 , C12P21/08 , G01N33/543 , C07H21/04 , C07K14/28 , C12N5/06
CPC分类号： G01N33/543 , A61K2039/505 , C07K16/2866 , C07K2317/24 , C07K2317/565 , C07K2317/732 , C07K2319/00 , G01N2333/78
摘要： A recombinant antibody or the antibody fragment thereof which specifically reacts with an extracellular domain of human CCR4; a DNA which encodes the recombinant antibody or the antibody fragment thereof; a method for producing the recombinant antibody or the antibody fragment thereof; a method for immunologically detecting CCR4, a method for immunologically detecting a cell which expressed CCR4 on the cell surface, a method for depleting a cell which expresses CCR4 on the cell surface, and a method for inhibiting production of Th2 cytokine, which comprise using the recombinant antibody according or antibody fragment thereof; a therapeutic or diagnostic agent for Th2-mediated immune diseases; and a therapeutic or diagnostic agent for a blood cancer.
摘要翻译：与人CCR4的细胞外结构域特异性反应的重组抗体或其抗体片段; 编码重组抗体或其抗体片段的DNA; 制备重组抗体或其抗体片段的方法; 用于免疫学检测CCR4的方法，用于免疫检测在细胞表面上表达CCR4的细胞的方法，用于在细胞表面上表达CCR4的细胞消耗的方法，以及抑制Th2细胞因子产生的方法，其包括使用重组抗体或其抗体片段; Th2介导的免疫疾病的治疗或诊断剂; 和用于血液癌的治疗或诊断剂。

22. 发明授权

US5977298A Calcitonin derivatives 失效
标题翻译：降钙素衍生物
公开(公告)号：US5977298A
公开(公告)日：1999-11-02
申请号：US934741
申请日：1997-09-22
申请人： Kenji Shibata , Motoo Yamasaki , Masako Hamada , Tatsuya Tamaoki , Nobuo Kosaka , Soichiro Sato
发明人： Kenji Shibata , Motoo Yamasaki , Masako Hamada , Tatsuya Tamaoki , Nobuo Kosaka , Soichiro Sato
IPC分类号： C07K14/585 , A61K38/00
CPC分类号： C07K14/585
摘要： The present invention relates to compounds represented by formula (I): ##STR1## wherein Z represents Gly or Cys; X represents an (.alpha.-amino acid residue; Y represents a natural calcitonin moiety, a partial natural calcitonin peptide moiety, or a natural calcitonin-like peptide moiety; m represents an integer of 5-8, .alpha.-amino acid residues represented by X being the same or different; and n represents an integer of 0-3; provided that when m is 5, the sequence of 4 C-terminal residues of --(X).sub.m -- is different from the sequence of the third to sixth amino acids of natural calcitonin, and pharmaceutically acceptable salts thereof.
摘要翻译：本发明涉及由式（I）表示的化合物：其中Z表示Gly或Cys; X表示（α-氨基酸残基; Y表示天然降钙素部分，部分天然降钙素肽部分或天然降钙素样肽部分; m表示5-8的整数，X表示的α-氨基酸残基相同或不同; n表示0-3的整数;条件是当m为5时， - （X）m-的4 C-末端残基的序列与第三至第六氨基酸的序列不同的天然降钙素及其药学上可接受的盐。

23. 发明授权

US5171575A Process for preventing diarrhea in animals 失效
标题翻译：防止动物腹泻的过程
公开(公告)号：US5171575A
公开(公告)日：1992-12-15
申请号：US728032
申请日：1991-07-02
申请人： Kenji Shibata , Masami Ozima , Takeaki Hasegawa
发明人： Kenji Shibata , Masami Ozima , Takeaki Hasegawa
IPC分类号： A23K1/00 , A23K1/14 , A23K1/16 , A23K1/18
CPC分类号： A23K50/30 , A23K10/18 , A23K10/30 , A23K20/105 , A23K20/163 , Y10S514/867
摘要： There is disclosed a pharmaceutical composition for animals comprising at least one of a vinegar, a flesh of Japanese apricot, oranges, tomatoes and strawberries; and saccharides or a combination of saccharides and an edible organic acid, and optionally containing Lactobacillus bifidus.
摘要翻译：公开了一种用于动物的药物组合物，其包括醋，日本杏仁，橙子，番茄和草莓中的至少一种; 和糖类或糖类和可食用有机酸的组合，以及任选地含有双歧杆菌（Lactobacillus bifidus）。

24. 发明授权

US08581477B2 Piezoelectric film element using (Na,K,Li)NbO3 有权
标题翻译：使用（Na，K，Li）NbO 3的压电薄膜元件
公开(公告)号：US08581477B2
公开(公告)日：2013-11-12
申请号：US13018693
申请日：2011-02-01
申请人： Kazufumi Suenaga , Kenji Shibata , Kazutoshi Watanabe , Akira Nomoto
发明人： Kazufumi Suenaga , Kenji Shibata , Kazutoshi Watanabe , Akira Nomoto
IPC分类号： H01L41/047 , H01L41/187
CPC分类号： H01L41/187 , H01L41/0477 , H01L41/0805 , H01L41/094 , H01L41/1873 , H01L41/29 , H01L41/316
摘要： A piezoelectric film element is provided, which is capable of improving piezoelectric properties, having on a substrate at least a lower electrode, a lead-free piezoelectric film, and an upper electrode, wherein at least the lower electrode out of the lower electrode and the upper electrode has a crystal structure of a cubic crystal system, a tetragonal crystal system, an orthorhombic crystal system, a hexagonal crystal system, a monoclinic crystal system, a triclinic crystal system, a trigonal crystal system, or has a composition in which one of these crystals exists or two or more of them coexist, and crystal axes of the crystal structure are preferentially oriented to a specific axis smaller than or equal to two axes of these crystals, and a ratio c/a′ is set in a range of 0.992 or more and 0.999 or less, which is the ratio of a crystal lattice spacing c in a direction of a normal line to the substrate surface, with respect to a crystal lattice spacing a′ whose inclination angle from the substrate surface is in a range of 10° or more and 30° or less.
摘要翻译：提供一种能够改善压电性能的压电膜元件，其在基板上至少具有下电极，无铅压电膜和上电极，其中至少下电极中的下电极和上电极具有立方晶系，四方晶系，正交晶系，六方晶系，单斜晶系，三斜晶系，三
晶体系的晶体结构，或其组成为：这些晶体存在或其中的两种以上共存，并且晶体结构的晶轴优先取向小于或等于这些晶体的两个轴的特定轴，并且将比率c / a'设定在0.992的范围内以上且0.999以下，即与法线的方向相对于基板表面的晶格间距c的比例，相对于晶格间距a'，其倾斜角为基板表面的厚度在10°以上且30°以下的范围内。

25. 发明申请

US20120306314A1 PIEZOELECTRIC THIN FILM ELEMENT, AND PIEZOELECTRIC THIN FILM DEVICE 有权
标题翻译：压电薄膜元件和压电薄膜器件
公开(公告)号：US20120306314A1
公开(公告)日：2012-12-06
申请号：US13577405
申请日：2011-02-15
申请人： Kazufumi Suenaga , Kenji Shibata , Kazutoshi Watanabe , Akira Nomoto
发明人： Kazufumi Suenaga , Kenji Shibata , Kazutoshi Watanabe , Akira Nomoto
IPC分类号： H01L41/04
CPC分类号： H01L41/0805 , H01L41/1873 , H01L41/316
摘要： Disclosed are a piezoelectric thin film element and a piezoelectric thin film device which have improved piezoelectric properties and high performance and can be produced in improved yields. The piezoelectric thin film element (1) comprises: a substrate (10), and a piezoelectric thin film (40) which is arranged on the substrate (10), has at least one crystal structure represented by general formula (NaxKyLiz)NbO3 (0≦x≦1, 0≦y≦1, 0≦z≦0.2, x+y+z=1) and selected from the group consisting of pseudo-cubic crystal, a hexagonal crystal, and an orthorhombic crystal, and contains an inert gas element at a ratio of 80 ppm or less by mass.
摘要翻译：公开了一种压电薄膜元件和压电薄膜器件，其具有改进的压电性能和高性能，并且可以以提高的产率制造。压电薄膜元件（1）包括：基板（10）和布置在基板（10）上的压电薄膜（40），具有至少一个由通式（NaxKyLiz）NbO 3（0＆nlE）表示的晶体结构 ; x＆nlE; 1,0，nlE; y＆nlE; 1,0，nlE; z＆nlE; 0.2，x + y + z = 1），选自假立方晶体，六方晶体和正交晶体，气体元素的比例为80ppm以下。

26. 发明授权

US08304966B2 Piezoelectric thin film element and manufacturing method of the piezoelectric thin film element, piezoelectric thin film device 有权
标题翻译：压电薄膜元件和压电薄膜元件的制造方法，压电薄膜器件
公开(公告)号：US08304966B2
公开(公告)日：2012-11-06
申请号：US12819424
申请日：2010-06-21
申请人： Kazufumi Suenaga , Kenji Shibata , Hideki Sato , Akira Nomoto
发明人： Kazufumi Suenaga , Kenji Shibata , Hideki Sato , Akira Nomoto
IPC分类号： H01L41/187
CPC分类号： C04B35/495 , C04B2235/3201 , C04B2235/3203 , C04B2235/3251 , H01L41/187 , H01L41/1873 , H01L41/316
摘要： To provide a piezoelectric thin film element capable of improving piezoelectric characteristics and realize a piezoelectric thin film device with high performance and high reliability, comprising: a substrate; and a piezoelectric thin film formed on the substrate by a sputtering method, with perovskite oxide expressed by (NaxKyLiz)NbO3 (0≦x≦1, 0≦y≦1, 0≦z≦0, 2, x+y+z=1) as a main phase, wherein an absolute value of an internal stress of the piezoelectric thin film is 1.6 GPa or less.
摘要翻译：为了提供能够改善压电特性并实现具有高性能和高可靠性的压电薄膜器件的压电薄膜元件，包括：衬底; （NaxKyLiz）NbO3（0＆nlE; x＆nlE; 1,0＆amp; nlE; y＆nlE; 1,0＆amp; nlE; z＆nlE; 0,2，x + y + z = 0）表示的由钙钛矿氧化物形成的基板上的压电薄膜， 1）作为主相，其中压电薄膜的内应力的绝对值为1.6GPa以下。

27. 发明授权

US08084925B2 Piezoelectric thin film elemental device, sensor and actuator 有权
标题翻译：压电薄膜元件，传感器和执行器
公开(公告)号：US08084925B2
公开(公告)日：2011-12-27
申请号：US12427348
申请日：2009-04-21
申请人： Kenji Shibata , Fumihito Oka , Kazufumi Suenaga
发明人： Kenji Shibata , Fumihito Oka , Kazufumi Suenaga
IPC分类号： H01L41/08
CPC分类号： H01L41/1873 , H01L41/0815 , H01L41/094 , H01L41/316
摘要： A piezoelectric thin film element has a piezoelectric thin film on a substrate, the piezoelectric thin film has a (K1-x,Nax)NbO3thin film expressed by a compositional formula (K1-xNax)NbO3(0
摘要翻译：压电薄膜元件在基板上具有压电薄膜，压电薄膜具有由组成式（K1-xNax）NbO3（0

28. 发明授权

US07901800B2 Piezoelectric element 有权
标题翻译：压电元件
公开(公告)号：US07901800B2
公开(公告)日：2011-03-08
申请号：US12073238
申请日：2008-03-03
申请人： Kenji Shibata , Fumihito Oka
发明人： Kenji Shibata , Fumihito Oka
IPC分类号： B32B9/00 , B32B19/00 , G11B11/105 , G11B5/64 , H01L41/00 , H02N2/00
CPC分类号： H01L41/1873 , H01L41/0815 , H01L41/094 , H01L41/316 , Y10T428/26 , Y10T428/265
摘要： A piezoelectric film formed above a Si substrate. The piezoelectric film is formed of a potassium sodium niobate expressed by a general formula (K,Na)NbO3 with perovskite structure. A film thickness of the piezoelectric film is within a range from 0.3 μm to 10 μm. An intermediate film is formed between the Si substrate and the piezoelectric film. The intermediate film generates a stress in a compressive direction in the piezoelectric film.
摘要翻译：在Si衬底上形成的压电薄膜。压电薄膜由钙钛矿结构的通式（K，Na）NbO 3表示的铌酸钾钠形成。压电膜的膜厚在0.3μm〜10μm的范围内。在Si衬底和压电膜之间形成中间膜。中间膜在压电膜中产生压缩方向的应力。

29. 发明申请

US20100156247A1 Substrate with a piezoelectric thin film 有权
标题翻译：具有压电薄膜的基板
公开(公告)号：US20100156247A1
公开(公告)日：2010-06-24
申请号：US12656975
申请日：2010-02-22
申请人： Kenji Shibata , Fumihito Oka
发明人： Kenji Shibata , Fumihito Oka
IPC分类号： H01L41/08 , H01L41/187
CPC分类号： H01L41/094 , H01L41/1873 , H01L41/316 , H01L41/319
摘要： A substrate has a first thermal expansion coefficient and a piezoelectric thin film has a second thermal expansion coefficient. The piezoelectric thin film is mainly composed of a potassium sodium niobate (K,Na)NbO3 with a perovskite structure. A curvature radius of a warping of the substrate provided with the piezoelectric thin film due to difference between the first and the second thermal expansion coefficients is 10 m or more at room temperature. The piezoelectric thin film has a thickness of 0.2 μm to 10 μm. The piezoelectric thin film is oriented in one of plane orientations (001), (110), and (111).
摘要翻译：基板具有第一热膨胀系数，并且压电薄膜具有第二热膨胀系数。压电薄膜主要由具有钙钛矿结构的铌酸钾钠（K，Na）NbO 3组成。由于第一和第二热膨胀系数之间的差异，设置有压电薄膜的基板的翘曲的曲率半径在室温下为10μm以上。压电薄膜的厚度为0.2μm〜10μm。压电薄膜在平面取向（001），（110）和（111）中的一个取向。

30. 发明申请

US20090191431A1 METHOD OF MANUFACTURING CATALYST CARRIER, CATALYST CARRIER, AND ELECTRODE OF FUEL CELL BATTERY 失效
标题翻译：制造催化载体，催化载体和燃料电池电极的方法
公开(公告)号：US20090191431A1
公开(公告)日：2009-07-30
申请号：US12361068
申请日：2009-01-28
申请人： Mineo Washima , Kenji Shibata , Fumihito Oka
发明人： Mineo Washima , Kenji Shibata , Fumihito Oka
IPC分类号： H01M4/64 , H01M4/88 , B01J32/00 , B01J23/42 , B01J23/72 , B01J23/755 , B01J23/50 , B01J21/04 , B01J23/20 , B01J21/06 , B01J23/02
CPC分类号： B01J37/0225 , B01J23/42 , B01J37/0018 , H01M4/8605 , H01M4/8807 , H01M4/8817 , H01M4/8846 , H01M4/8853 , H01M4/92 , H01M8/0232 , H01M8/0236 , H01M8/0245 , H01M2008/1095 , Y02P70/56 , Y10T428/12014 , Y10T428/249953
摘要： To smoothly deliver a thermal energy required in an active site of a catalyst carried on a carrier. A method of manufacturing a catalyst carrier of the present invention includes the steps of: forming a mixed thin film in which at least metal and ceramics are mixed on a metal base, by spraying aerosol, with metal powders and ceramics powders mixed therein, on the metal base; and making the mixed thin film porous, by dissolving the metal of the mixed thin film into acid or alkaline solution to remove this metal.
摘要翻译：平稳地传送载体上承载的催化剂的活性部位所需的热能。制备本发明的催化剂载体的方法包括以下步骤：在金属基底上形成至少金属和陶瓷混合的混合薄膜，通过喷雾气溶胶，将金属粉末和陶瓷粉末混合在其上金属底座; 并通过将混合的薄膜的金属溶解在酸或碱性溶液中以除去该金属，使混合的薄膜多孔化。

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