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21. 再颁专利

USRE43401E1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：USRE43401E1
公开(公告)日：2012-05-22
申请号：US12369914
申请日：2009-02-12
申请人： Hiroyuki Miyake , Yutaka Shionoiri
发明人： Hiroyuki Miyake , Yutaka Shionoiri
IPC分类号： H03K19/0175
CPC分类号： H01L27/1255 , G09G3/20 , G09G3/3208 , G09G3/3275 , G09G3/3648 , G09G2300/08 , G09G2310/0218 , G09G2310/0267 , G09G2310/027 , G09G2310/0275 , G09G2310/0286 , G09G2310/0289 , H01L27/1214 , H01L27/3248 , H01L29/78621 , H01L51/5218 , H01L51/5221 , H01L2029/7863 , H01L2251/5315 , H03K19/01714
摘要： A circuit with a large load driving capability, which is structured by single polarity TFTs, is provided. With a capacitor (154) formed between a gate electrode and an output electrode of a TFT (152), the electric potential of the gate electrode of the TFT (152) is increased by a boot strap and normal output with respect to an input signal is obtained without amplitude attenuation of an output signal due to the TFT threshold value. In addition, a capacitor (155) formed between a gate electrode and an output electrode of a TFT (153) compensates for increasing the electric potential of the gate electrode of the TFT (152), and a larger load driving capability is obtained.
摘要翻译：提供了由单极性TFT构成的具有大负载驱动能力的电路。通过形成在TFT（152）的栅电极和输出电极之间的电容器（154），TFT（152）的栅电极的电位通过引导带增加并相对于输入信号的正常输出由于TFT阈值而不产生输出信号的幅度衰减。此外，形成在TFT（153）的栅电极和输出电极之间的电容器（155）补偿增加TFT（152）的栅电极的电位，并且获得更大的负载驱动能力。

22. 发明授权

US09472559B2 Memory device and semiconductor device 有权
标题翻译：存储器件和半导体器件
公开(公告)号：US09472559B2
公开(公告)日：2016-10-18
申请号：US12976340
申请日：2010-12-22
申请人： Yutaka Shionoiri , Hiroyuki Miyake , Kiyoshi Kato
发明人： Yutaka Shionoiri , Hiroyuki Miyake , Kiyoshi Kato
IPC分类号： H01L29/10 , H01L29/12 , H01L27/115 , H01L27/12 , H01L27/13 , G11C16/04
CPC分类号： H01L27/1052 , G11C16/0433 , H01L27/115 , H01L27/1156 , H01L27/1225 , H01L27/124 , H01L27/1251 , H01L27/1255 , H01L27/13 , H01L29/78648 , H01L29/7869
摘要： It is an object to provide a memory device whose power consumption can be suppressed and a semiconductor device including the memory device. As a switching element for holding electric charge accumulated in a transistor which functions as a memory element, a transistor including an oxide semiconductor film as an active layer is provided for each memory cell in the memory device. The transistor which is used as a memory element has a first gate electrode, a second gate electrode, a semiconductor film located between the first gate electrode and the second gate electrode, a first insulating film located between the first gate electrode and the semiconductor film, a second insulating film located between the second gate electrode and the semiconductor film, and a source electrode and a drain electrode in contact with the semiconductor film.
摘要翻译：本发明的目的是提供一种能够抑制功耗的存储器件和包括存储器件的半导体器件。作为用作保持蓄积在用作存储元件的晶体管中的电荷的开关元件，为存储器件中的每个存储单元提供包括氧化物半导体膜作为有源层的晶体管。用作存储元件的晶体管具有第一栅电极，第二栅电极，位于第一栅电极和第二栅电极之间的半导体膜，位于第一栅电极和半导体膜之间的第一绝缘膜，位于第二栅电极和半导体膜之间的第二绝缘膜，以及与半导体膜接触的源电极和漏电极。

23. 发明授权

US07166863B2 Semiconductor element, semiconductor device, electronic device, TV set and digital camera 有权
标题翻译：半导体元件，半导体器件，电子设备，电视机和数码相机
公开(公告)号：US07166863B2
公开(公告)日：2007-01-23
申请号：US10941823
申请日：2004-09-16
申请人： Shunpei Yamazaki , Kiyoshi Kato , Atsuo Isobe , Hidekazu Miyairi , Hideomi Suzawa , Yutaka Shionoiri , Hiroyuki Miyake
发明人： Shunpei Yamazaki , Kiyoshi Kato , Atsuo Isobe , Hidekazu Miyairi , Hideomi Suzawa , Yutaka Shionoiri , Hiroyuki Miyake
IPC分类号： H01L29/04 , H01L31/036
CPC分类号： H01L21/02609 , H01L21/2026 , H01L27/12 , H01L27/1281 , H01L29/66757 , H01L29/78621 , H01L29/78675 , H01L29/78696
摘要： A semiconductor element which is capable of operating at a high speed, high in an electric current drive capability, and small in fluctuation among a plurality of elements, and a semiconductor device including the semiconductor element are provided. The semiconductor element has a first crystalline semiconductor region including plural crystal orientations without practically having a grain boundary on an insulating surface, the first crystalline semiconductor region being provided to be jointly connected to a conductive region including the first crystalline semiconductor region and a second crystalline semiconductor region, in which the conductive region is provided astride insulating films extending in a linear stripe pattern.
摘要翻译：提供能够高速运行，电流驱动能力高，多个元件之间波动小的半导体元件，以及包括半导体元件的半导体器件。半导体元件具有包括多个晶体取向的第一晶体半导体区域，而绝缘表面实际上不具有晶界，第一晶体半导体区域被设置为共同连接到包括第一晶体半导体区域的导电区域和第二晶体半导体区域区域，其中导电区域被设置成跨过线性条纹图案延伸的绝缘膜。

24. 发明申请

US20060290380A1 Semiconductor Device 有权
标题翻译：半导体器件
公开(公告)号：US20060290380A1
公开(公告)日：2006-12-28
申请号：US11463356
申请日：2006-08-09
申请人： Hiroyuki Miyake , Yutaka Shionoiri
发明人： Hiroyuki Miyake , Yutaka Shionoiri
IPC分类号： H03K19/094
CPC分类号： H01L27/1255 , G09G3/20 , G09G3/3208 , G09G3/3275 , G09G3/3648 , G09G2300/08 , G09G2310/0218 , G09G2310/0267 , G09G2310/027 , G09G2310/0275 , G09G2310/0286 , G09G2310/0289 , H01L27/1214 , H01L27/3248 , H01L29/78621 , H01L51/5218 , H01L51/5221 , H01L2029/7863 , H01L2251/5315 , H03K19/01714
摘要： A circuit with a large load driving capability, which is structured by single polarity TFTs, is provided. With a capacitor (154) formed between a gate electrode and an output electrode of a TFT (152), the electric potential of the gate electrode of the TFT (152) is increased by a boot strap and normal output with respect to an input signal is obtained without amplitude attenuation of an output signal due to the TFT threshold value. In addition, a capacitor (155) formed between a gate electrode and an output electrode of a TFT (153) compensates for increasing the electric potential of the gate electrode of the TFT )152), and a larger load driving capability is obtained.
摘要翻译：提供了由单极性TFT构成的具有大负载驱动能力的电路。通过形成在TFT（152）的栅电极和输出电极之间的电容器（154），TFT（152）的栅电极的电位通过引导带增加并相对于输入信号的正常输出由于TFT阈值而不产生输出信号的幅度衰减。此外，形成在TFT（153）的栅电极和输出电极之间的电容器（155）补偿增加TFT的栅极电位152），并且获得更大的负载驱动能力。

25. 发明申请

US20060238221A1 Circuit having source follower and semiconductor device having the circuit 有权
公开(公告)号：US20060238221A1
公开(公告)日：2006-10-26
申请号：US11474938
申请日：2006-06-27
申请人： Hiroyuki Miyake , Yutaka Shionoiri
发明人： Hiroyuki Miyake , Yutaka Shionoiri
IPC分类号： H03K19/094
CPC分类号： G09G3/20 , G09G2310/0275 , H03F1/301 , H03F3/505
摘要： When a potential of a power supply line varies according to a flowing current, the gate-source voltage Vgs of a transistor also varies, leading to variations in the constant current between each source follower. In order to solve this problem, a potential Vb of the gate terminal of a transistor as a constant current source is changed in the same manner as a power supply line Vss which is connected to the source terminal of the transistor. Therefore, variations in the constant current are suppressed and variations in the output of the source followers are thus suppressed. In addition, by connecting the circuit having source followers to the output side of a signal line driver circuit, it can be prevented that luminance unevenness of a striped pattern is recognized in a display portion of a semiconductor device.

26. 发明申请

US20050051802A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20050051802A1
公开(公告)日：2005-03-10
申请号：US10901127
申请日：2004-07-29
申请人： Hiroyuki Miyake , Yutaka Shionoiri
发明人： Hiroyuki Miyake , Yutaka Shionoiri
IPC分类号： H01L51/50 , G09G3/20 , G09G3/30 , G09G3/32 , G09G3/36 , G11C19/00 , G11C19/28 , H01L21/77 , H01L21/84 , H01L27/12 , H01L27/32 , H01L29/786 , H03K19/017 , H03K19/0175 , H05B33/14 , H01L29/04
CPC分类号： H01L27/1255 , G09G3/20 , G09G3/3208 , G09G3/3275 , G09G3/3648 , G09G2300/08 , G09G2310/0218 , G09G2310/0267 , G09G2310/027 , G09G2310/0275 , G09G2310/0286 , G09G2310/0289 , H01L27/1214 , H01L27/3248 , H01L29/78621 , H01L51/5218 , H01L51/5221 , H01L2029/7863 , H01L2251/5315 , H03K19/01714
摘要： A circuit with a large load driving capability, which is structured by single polarity TFTs, is provided. With a capacitor (154) formed between a gate electrode and an output electrode of a TFT (152), the electric potential of the gate electrode of the TFT (152) is increased by a boot strap and normal output with respect to an input signal is obtained without amplitude attenuation of an output signal due to the TFT threshold value. In addition, a capacitor (155) formed between a gate electrode and an output electrode of a TFT (153) compensates for increasing the electric potential of the gate electrode of the TFT (152), and a larger load driving capability is obtained.
摘要翻译：提供了由单极性TFT构成的具有大负载驱动能力的电路。通过形成在TFT（152）的栅电极和输出电极之间的电容器（154），TFT（152）的栅电极的电位通过引导带增加并相对于输入信号的正常输出由于TFT阈值而不产生输出信号的幅度衰减。此外，形成在TFT（153）的栅电极和输出电极之间的电容器（155）补偿增加TFT（152）的栅电极的电位，并且获得更大的负载驱动能力。

27. 发明授权

US07595794B2 Circuit having source follower and semiconductor device having the circuit 有权
标题翻译：具有源极跟随器和具有该电路的半导体器件的电路
公开(公告)号：US07595794B2
公开(公告)日：2009-09-29
申请号：US11474938
申请日：2006-06-27
申请人： Hiroyuki Miyake , Yutaka Shionoiri
发明人： Hiroyuki Miyake , Yutaka Shionoiri
IPC分类号： G06F3/038 , G09G5/00
CPC分类号： G09G3/20 , G09G2310/0275 , H03F1/301 , H03F3/505
摘要： When a potential of a power supply line varies according to a flowing current, the gate-source voltage Vgs of a transistor also varies, leading to variations in the constant current between each source follower. In order to solve this problem, a potential Vb of the gate terminal of a transistor as a constant current source is changed in the same manner as a power supply line Vss which is connected to the source terminal of the transistor. Therefore, variations in the constant current are suppressed and variations in the output of the source followers are thus suppressed. In addition, by connecting the circuit having source followers to the output side of a signal line driver circuit, it can be prevented that luminance unevenness of a striped pattern is recognized in a display portion of a semiconductor device.
摘要翻译：当电源线的电位根据流动电流而变化时，晶体管的栅极 - 源极电压Vgs也变化，导致每个源极跟随器之间的恒定电流的变化。为了解决这个问题，作为恒流源的晶体管的栅极端子的电势Vb以与连接到晶体管的源极端子的电源线Vss相同的方式改变。因此，抑制恒定电流的变化，从而抑制源极跟随器的输出的变化。此外，通过将具有源极跟随器的电路连接到信号线驱动电路的输出侧，可以防止在半导体器件的显示部分中识别出条纹图案的亮度不均匀。

28. 发明授权

US07307463B2 Source follower, voltage follower, and semiconductor device 有权
标题翻译：源极跟随器，电压跟随器和半导体器件
公开(公告)号：US07307463B2
公开(公告)日：2007-12-11
申请号：US10815775
申请日：2004-04-02
申请人： Hiroyuki Miyake , Yutaka Shionoiri
发明人： Hiroyuki Miyake , Yutaka Shionoiri
IPC分类号： H03K5/153 , G09G3/36
CPC分类号： G11C19/28 , G09G3/3685 , G09G2310/0275 , G11C19/00 , G11C19/184 , H03F3/505
摘要： A source follower in which any one of the following three modes is selected by a plurality of switching elements: a first mode in which a first potential is supplied to a gate of a transistor and an input potential is supplied to a first electrode of a capacitor respectively and a second electrode of the capacitor and a source of the transistor are connected, a second mode in which an input potential is supplied to the first electrode and the gate of the transistor and the second electrode floats, and a third mode in which the first electrode and the gate of the transistor are connected and a potential thereof floats and a second potential is supplied to the second electrode, a drain of the transistor is supplied with a third potential, and a potential of the source of the transistor is supplied to a subsequent circuit.
摘要翻译：源跟随器，其中以下三种模式中的任何一种由多个开关元件选择：第一模式，其中第一电位被提供给晶体管的栅极并且输入电位被提供给电容器的第一电极分别连接电容器的第二电极和晶体管的源极，其中输入电位被提供给第一电极并且晶体管和第二电极的栅极浮置的第二模式以及第三模式，其中第一电极和晶体管的栅极连接，并且其电位浮动，并且第二电位被提供给第二电极，晶体管的漏极被提供第三电位，并且将晶体管的源极的电位供给到一个后续的电路。

29. 发明授权

US07268756B2 Liquid crystal display device and method of driving a liquid crystal display device 失效
标题翻译：液晶显示装置及驱动液晶显示装置的方法
公开(公告)号：US07268756B2
公开(公告)日：2007-09-11
申请号：US10650930
申请日：2003-08-29
申请人： Jun Koyama , Yutaka Shionoiri , Hiroyuki Miyake , Yasuhiro Hirayama , Buyeol Lee
发明人： Jun Koyama , Yutaka Shionoiri , Hiroyuki Miyake , Yasuhiro Hirayama , Buyeol Lee
IPC分类号： G09G3/36
CPC分类号： G09G3/3688 , G09G3/3648 , G09G3/3677 , G09G2300/0408 , G09G2310/0297 , G09G2320/0233
摘要： A liquid crystal display device having analog buffer circuits, which is reduced in luminance fluctuation is provided. A source signal line driver circuit has a plurality of analog buffer circuits, the plurality of source signal lines and the plurality of analog buffer circuits constitute a circuit group, and source signal lines connected to the analog buffer circuits are switched their connections to different analog buffer circuits each time a new period is started. Therefore, output fluctuation among the analog buffer circuits is averaged and a uniform image can be displayed on the screen.
摘要翻译：提供一种具有减少亮度波动的模拟缓冲电路的液晶显示装置。源信号线驱动电路具有多个模拟缓冲电路，多个源极信号线和多个模拟缓冲电路构成电路组，连接到模拟缓冲电路的源极信号线将其连接切换到不同的模拟缓冲器每次启动一个新的时期的电路。因此，模拟缓冲电路之间的输出波动被平均化并且可以在屏幕上显示均匀的图像。

30. 发明授权

US07091749B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07091749B2
公开(公告)日：2006-08-15
申请号：US10901127
申请日：2004-07-29
申请人： Hiroyuki Miyake , Yutaka Shionoiri
发明人： Hiroyuki Miyake , Yutaka Shionoiri
IPC分类号： H03K19/0175
CPC分类号： H01L27/1255 , G09G3/20 , G09G3/3208 , G09G3/3275 , G09G3/3648 , G09G2300/08 , G09G2310/0218 , G09G2310/0267 , G09G2310/027 , G09G2310/0275 , G09G2310/0286 , G09G2310/0289 , H01L27/1214 , H01L27/3248 , H01L29/78621 , H01L51/5218 , H01L51/5221 , H01L2029/7863 , H01L2251/5315 , H03K19/01714
摘要： A circuit with a large load driving capability, which is structured by single polarity TFTs, is provided. With a capacitor (154) formed between a gate electrode and an output electrode of a TFT (152), the electric potential of the gate electrode of the TFT (152) is increased by a boot strap and normal output with respect to an input signal is obtained without amplitude attenuation of an output signal due to the TFT threshold value. In addition, a capacitor (155) formed between a gate electrode and an output electrode of a TFT (153) compensates for increasing the electric potential of the gate electrode of the TFT (152), and a larger load driving capability is obtained.
摘要翻译：提供了由单极性TFT构成的具有大负载驱动能力的电路。通过形成在TFT（152）的栅电极和输出电极之间的电容器（154），TFT（152）的栅电极的电位通过引导带增加并相对于输入信号的正常输出由于TFT阈值而不产生输出信号的幅度衰减。此外，形成在TFT（153）的栅电极和输出电极之间的电容器（155）补偿增加TFT（152）的栅电极的电位，并且获得更大的负载驱动能力。

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